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Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

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Chinese Physics B 2024年第3期33卷 630-637页

作者：黄威俞金玲刘雨彭燕王利军梁平陈堂胜徐现刚刘峰奇陈涌海 key laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China national key laboratory of solid-state microwave devices and circuits Nanjing Electronic Devices InstituteNanjing 210016China Institute of Micro/Nano devices and Solar Cells School of Physics and Information EngineeringFuzhou UniversityFuzhou 350108China state key laboratory of Crystal Materials Shandong UniversityJinan 250100China

Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)*** reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by *** RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic *** comparing with the Raman spectrum,it is verified that the micropipes consist of edge *** different patterns of the RA images are due to the different orientations of the Burgers ***,the strain distribution of the micropipes is also *** can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using ***,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

关键词： scanning anisotropy microscopy SiC reflection anisotropy edge dislocation

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

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Journal of Semiconductors 2024年第1期45卷 38-41页

作者： Yansheng Hu Yuangang Wang Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng national key laboratory of solid-state microwave devices and circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are *** asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power *** breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 *** maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,*** results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

关键词： freestanding GaN substrates AlGaN/GaN HEMTs continuous-wave power density breakdown voltage Γ-shaped gate

Ultrafast modulable 2DEG Huygens metasurface

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Photonics Research 2024年第5期12卷 1004-1015页

作者： HONGXIN ZENG XUAN CONG SHIQI WANG SEN GONG LIN HUANG LAN WANG HUAJIE LIANG FENG LAN HAOYI CAO ZHENG WANG WEIPENG WANG SHIXIONG LIANG ZHIHONG FENG ZIQIANG YANG YAXIN ZHANG TIE JUN CUI Terahertz Communication laboratory School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611730China Zhangjiang laboratory Shanghai 201210China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313098China national key laboratory of solid-state microwave devices and circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China Institute of Electromagnetic Space and state key laboratory of Millimeter Waves Southeast UniversityNanjing 210096China

Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic ***,prevailing active or reconfigurable Huygens metasurfaces,based on all-optical systems,encounter formidable challenges associated with the intricate control of bulk dielectric using laser equipment and the presence of residual thermal effects,leading to limitations in continuous modulation ***,we present an ultrafast electrically driven terahertz Huygens metasurface that comprises an artificial microstructure layer featuring a two-dimensional electron gas(2DEG)provided by an AlGaN/GaN heterojunction,as well as a passive microstructure *** precise manipulation of the carrier concentration within the 2DEG layer,we effectively govern the current distribution on the metasurfaces,inducing variations in electromagnetic resonance modes to modulate terahertz *** modulation mechanism achieves high efficiency and contrast for terahertz wave *** investigations demonstrate continuous modulation capabilities of up to 6 GHz,a modulation efficiency of 90%,a transmission of 91%,and a remarkable relative operating bandwidth of 55.5%.These significant advancements substantially enhance the performance of terahertz metasurface ***,our work not only enables efficient amplitude modulation but also introduces an approach for the development of high-speed and efficient intelligent transmissive metasurfaces.

关键词： heterojunction precise surface

Programmable photonic RF filters based on an integrated Fabry-Pérot laser with a saturable absorber

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Chinese Optics Letters 2024年第2期22卷 214-220页

作者：徐真真刘奕彤刘嘉慧王玲孙文韬孙振兴陈向飞 key laboratory of Intelligent Optical Sensing and Manipulation of the Ministry of Education&national laboratory of solid state Microstructures&College of Engineering and Applied Sciences&Institute of Optical Communication Engineering&Nanjing University-Tongding Joint Lab for Large-Scale Photonic Integrated circuits Nanjing UniversityNanjing 210023China

We propose and experimentally demonstrate the programmable photonic radio frequency(RF)filters based on an integrated Fabry-Pérot laser with a saturable absorber(FP-SA).Owing to the high output power and the relative flatness spectrum of the FP-SA laser,only a waveshaper and an erbium-doped fiber amplifier(EDFA)were needed,which can greatly reduce the complexity of the *** sinc filter employed 87 taps,representing a record-high tap number and resulting in a 3-d B bandwidth of 0.27 GHz and a quality factor of ***,Gaussian apodization enabled the out-of-band rejection of the filter to reach 34 d B and the center frequency to be finely tuned over a wide range,spanning from 4 to 14 *** results indicate that the proposed scheme could provide a promising guideline for the photonic RF filters that demand both high reconfigurability and greatly reduced size and complexity.

关键词： microwave filters microwave photonics passively mode-locked laser

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University state key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University national key laboratory of Materials for Integrated circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum state Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The state key Discipline laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University key laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University state key laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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Science China(Information Sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU Research Center for microwave Photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United Microelectronics Center (CUMEC) Xiongan Institute of Innovation Chinese Academy of Sciences

Photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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Analog spatiotemporal feature extraction for cognitive radio-frequency sensing with integrated photonics

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Light(Science & Applications) 2024年第3期13卷 478-487页

作者： Shaofu Xu Binshuo Liu Sicheng Yi Jing Wang Weiwen Zou state key laboratory of Advanced Optical Communication Systems and Networks Intelligent Microwave Lightwave Integration Innovation Center(imLic)Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghaiChina

Analog feature extraction(AFE)is an appealing strategy for low-latency and efficient cognitive sensing systems since key features are much sparser than the Nyquist-sampled ***,applying AFE to broadband radio-frequency(RF)scenarios is challenging due to the bandwidth and programmability bottlenecks of analog electronic ***,we introduce a photonics-based scheme that extracts spatiotemporal features from broadband RF signals in the analog *** feature extractor structure inspired by convolutional neural networks is implemented on integrated photonic circuits to process RF signals from multiple antennas,extracting valid features from both temporal and spatial *** of the tunability of the photonic devices,the photonic spatiotemporal feature extractor is trainable,which enhances the validity of the extracted ***,a digital-analog-hybrid transfer learning method is proposed for the effective and low-cost training of the photonic feature *** validate our scheme,we demonstrate a radar target recognition task with a 4-GHz instantaneous *** results indicate that the photonic analog feature extractor tackles broadband RF signals and reduces the sampling rate of analog-to-digital converters to 1/4 of the Nyquist sampling while maintaining a high target recognition accuracy of 97.5%.Our scheme offers a promising path for exploiting the AFE strategy in the realm of cognitive RF sensing,with the potential to contribute to the efficient signal processing involved in applications such as autonomous driving,robotics,and smart factories.

关键词： scheme driving smart

microwave-assisted fast synthesis and red-emitting properties of a borotellurate-based phosphor with excellent thermostability

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Journal of Rare Earths 2024年第6期42卷 1036-1045,I0002页

作者： Yuefei Xiang Hong Li Hongzhi Zhang Lin Yang Canyuan Liao Tongsheng Yang Junpeng Li Zewen Guo Jing Zhu key laboratory of LCR Materials and devices of Yunnan Province Yunnan Key Laboratory of Carbon Neutrality and Green Low-carbon TechnologiesSchool of Materials and Energy Yunnan UniversityKunming650091China

At present,with the increasing application needs of phosphor-converted white light-emitting diode(wLED),the synthetic efficiency and thermal stability of phosphor become urgent ***,this research reports a microwave-assisted fast synthesis approach to obtain a Sm^(3+)-activated borotellurate Na_(2)Y_(2)TeO_(4)(BO_(3))_(2)(NYTB)red phosphor with high crystallinity,excellent thermostability,and low chromaticity *** the NYTB-based phosphor,in contrast to the conventional solid-state synthesis,the microwave-assisted synthesis method involves lower synthesis temperature and shorter processing ***,the concentration quenching mechanism was *** w-LED device packaged with the studied phosphor exhibits a near-standard white light with proper CCT and high Ra parameters.

关键词： Borotellurate Samarium microwave-assisted synthesis Red-emitting Thermal stability Rareearths

A Review of Terahertz solid-state Electronic/Optoelectronic devices and Communication Systems

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Chinese Journal of Electronics 2024年

作者： Wenbo LI Hongxin ZENG Lin HUANG Sen GONG Haoyi CAO Weipeng WANG Zheng WANG Hongji ZHOU Shixiong LIANG Ziqiang YANG Yaxin ZHANG University of Electronic Science and Technology of China Huzhou key laboratory of Terahertz Integrated circuits and Systems Yangtze Delta Region Institute (Huzhou)University of Electronic Science and Technology of China Terahertz Institute Zhangjiang national laboratory national key laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute

With the rapid development of modern communication technology, spectrum resources have become non-renewable and precious resources, and the terahertz frequency band has entered people's vision. Nowadays, terahertz communication technology has become one of the core technologies for future high-capacity and high-rate communication. This paper discusses and analyzes the core technologies related to the field of terahertz *** introduce the characteristics, domestic and international comparisons and development trends of the core devices for terahertz communication, and also introduce and discuss the terahertz solid-state frequency mixing communication system, terahertz direct modulation communication system, and terahertz optoelectronic communication ***, we summarize the development of terahertz communication technology and the outlook of future applications.

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