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A mild, configurable, flexible CoNi-LDH（v）/Zn battery based on H-vacancy-induced reversible Zn2+ intercalation

Journal of Energy Chemistry 2025年第1期100卷 498-508页

作者： Xinyue Cheng Dingsheng Wu Hao Gao Qingqing Wang Pengfei Lv Sam S.Yoon Qufu Wei key laboratory of Eco-textiles Ministry of Education Jiangnan University School of Mechanical Engineering Korea University

Flexible Zn-based batteries have attracted increasing research interest as essential components of wearable energy storage ***,the advancement of flexible aqueous Zn-based batteries based on Co-Ni layered double hydroxide （CoNi-LDH） as the cathode material is hampered by their poor cycling stability and the corrosiveness of alkaline ***,CoNi-LDH nanosheets enriched with H vacancies (CoNi-LDH（v）) were constructed on a flexible carbon cloth （CC） substrate via electrochemical deposition and *** Zn-based battery comprising CoNi-LDH（v）@CC as the cathode exhibited highly reversible conversion reactions and stable operation in 3 M ZnSO4electrolyte （pH=4）.The battery delivered an excellent specific capacity (225 mA h g-1,0.26 mA h cm-2),acceptable cycling stability（53.9%,900 cycles）,and high discharging *** abundant H vacancies served as active sites for the reversible intercalation of Zn2+and the extravasation of NO3-generated channels and space for Zn2+transport and storage,together enabling an excellent Zn2+storage ***,a sandwich-structured solid-state CoNi-LDH（v）@CC//Zn@CC battery was fabricated and was found to exhibit a noteworthy electrochemical performance and mechanical *** a proof of concept,the unencapsulated battery powered a digital watch under various deformation conditions and operated stably for 80 ***,the flexible battery displayed outstanding customizability,maintaining an open-circuit voltage of 1.42 V even after being cut *** proposed engineering strategy contributes to the realization of textiles with truly wearable energy-storage devices.

关键词： CoNi/Zn battery H vacancies Mild aqueous electrolyte Tailorable battery Wearable energy storage device

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11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

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Journal of Semiconductors 2024年第1期45卷 38-41页

作者： Yansheng Hu Yuangang Wang Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng national key laboratory of solid-state microwave devices and circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are *** asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power *** breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 *** maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,*** results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

关键词： freestanding GaN substrates AlGaN/GaN HEMTs continuous-wave power density breakdown voltage Γ-shaped gate

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Demonstrate chiral spin currents with nontrivial interactions in superconducting quantum circuit

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Chinese Physics B 2023年第4期32卷 587-592页

作者：喻祥敏邓翔徐建文郑文兰栋赵杰谭新生李邵雄于扬 national laboratory of solid state Microstructures School of PhysicsNanjing UniversityNanjing 210093China

Quantum many-body systems in which time-reversal symmetry is broken give rise to a wealth of exotic phases,and thus constitute one of the frontiers of modern condensed matter *** simulation allows us to better understand many-body systems with huge Hilbert space,where classical simulation is usually *** superconducting quantum circuit as a platform for quantum simulation,we realize synthetic Abelian gauge fields by using microwave drive and tunable coupling in loop configurations to break the time-reversal symmetry of the *** on high-precision manipulation and readout of circuit-QED architecture,we demonstrate the chiral ground spin current of a time-reversal symmetry broken system with nontrivial *** work is a significant attempt to simulate quantum many-body systems with time-reversal symmetry breaking in multi-qubit superconducting processors.

关键词： superconducting qubit time-reversal symmetry breaking chirality

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From lab to fab: path forward for 2D material electronics

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Science China(Information Sciences) 2023年第6期66卷 115-121页

作者： Hongkai NING Zhihao YU Taotao LI Haoliang SHEN Gen LONG Yi SHI Xinran WANG national laboratory of solid state Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Integrated circuits Nanjing University College of Integrated circuit Science and Engineering Nanjing University of Posts and Telecommunications Suzhou laboratory

The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance,power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.

关键词： two-dimensional materials transition-metaldichalcogenides equipment integrated circuits roadmap

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Fabrication of microresonators by using photoresist developer as etchant

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Chinese Physics B 2021年第6期30卷 28-31页

作者： Shu-Qing Song Jian-Wen Xu Zhi-Kun Han Xiao-Pei Yang Yu-Ting Sun Xiao-Han Wang Shao-Xiong Li Dong Lan Jie Zhao Xin-Sheng Tan Yang Yu national laboratory of solid state Microstructures School of PhysicsNanjing UniversityNanjing 210093China

In superconducting circuit,microwave resonators and capacitors are crucial components,and their quality has a strong impact on circuit *** we develop a novel wet etching process to define these two components using common photoresist developer as *** method reduces subsequent steps and can be completed immediately after *** measuring the internal quality factor of resonators,we show that it is possible to achieve similar or better performance when compared with samples made by standard etching *** easy-to-implement method may boost the yield hence providing an alternative fabrication process for microwave resonators and capacitors.

关键词： superconducting qubit microresonator easy-to-implement high quality factors

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Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

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Science China(Information Sciences) 2020年第10期63卷 211-218页

作者： Cong WANG Chen PAN Shi-Jun LIANG Bin CHENG Feng MIAO national laboratory of solid state Microstructures School of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing University

Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate ***, we fabricated a dual-gate vertical transistor based on graphene/MoTe2/graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors.

关键词： reconfigurable field-effect transistor vertical transistor graphene/MoTe2 van der Waals heterostructure ambipolar transistor dual-gate transistor

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A Review of Terahertz Sources Based on Planar Schottky Diodes

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Chinese Journal of Electronics 2022年第3期31卷 467-487页

作者： KOU Wei LIANG Shixiong ZHOU Hongji DONG Yazhou GONG Sen YANG Ziqiang ZENG Hongxin University of Electronic Science and Technology of China Yangtze Delta Region Institute (Huzhou) national key laboratory of Application Specific Integrated circuit Hebei Semiconductor Research Institute

The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging,sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced,and the future development trend is discussed.

关键词： frequency multiplier terahertz range terahertz wave terahertz planar Schottky diode terahertz information technology terahertz solid state source semiconductor devices Schottky diodes good frequency stability security inspection frequency multipliers terahertz wave devices special position solid-state terahertz sources high cutoff frequency low parasitic semiconductor device Schottky diodes technology electromagnetic spectrum

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An 8 GHz high power AlGaN/GaN HEMT VCO

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Journal of Semiconductors 2010年第7期31卷 61-64页

作者：陈慧芳王显泰陈晓娟罗卫军刘新宇 key laboratory of Microelectronics device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A high power X-band hybrid microwave integrated voltage controlled oscillator（VCO） based on Al-GaN /GaN HEMT is *** oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q *** VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -128 dBc/Hz at 1 MHz *** tuning range is more than 50 *** dominating effect of GaN HEMT＇s flicker noise on oscillator phase noise performance has also been *** measured results show great promise for AlGaN/GaN HEMT technology to be used in high power and low phase noise microwave source applications.

关键词： AlGaN/GaN HEMT negative resistance VCO high power phase noise flicker noise

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An X-band GaN combined solid-state power amplifier

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Journal of Semiconductors 2009年第9期30卷 57-61页

作者：陈炽郝跃冯辉杨林安马晓华段焕涛胡仕刚 key laboratory of Wide Band-Gap Semiconductor Materials and device School of MicroelectronicsXidian University

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.

关键词： AlGaN/GaN HEMT solid-state power amplifiers output power gain compression power added efficiency

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Terahertz wide range phase manipulation with super-resolution precision by near-field nonlinear coupling of a digitally coding needle meta-chip

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Photonics Research 2024年第9期12卷 1868-1876页

作者： HUAJIE LIANG HONGXIN ZENG TIANCHI ZHOU HANYU ZHAO SHAOKANG GU LIN ZOU TAO JIANG LAN WANG FENG LAN SHIXIONG LIANG ZHIHONG FENG ZIQIANG YANG YAXIN ZHANG Huzhou key laboratory of Terahertz Integrated circuits and Systems Yangtze Delta Region Institute(Huzhou)University of Electronic Science and Technology of ChinaHuzhou 313001China Sichuan Engineering Center of Integrated Optoelectronic&Radio Meta-chips School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China national key laboratory of solid-state microwave device and circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China Zhangjiang laboratory Shanghai 201204China

Achieving ultra-precise wide-range terahertz(THz)phase modulation has been a long-standing challenge due to the short wavelength and sensitive phase of THz *** paper proposes a new ultra-high precision phase control method employing a digitally coding needle meta-chip embedded in a *** needle tips can effectively couple THz waves via the charge aggregation *** controlling the Schottky diodes with coding voltages,the charge on each meta-structure part can be tuned to form strong or weak resonances,producing phase ***,the massive charge accumulation and the sub-λ∕10 distance between needle tips lead to near-field coupling among multiple ***,modulation of the charge at each tip by multichannel coding voltages enables combined resonance tuning of THz waves,yielding a nonlinear phase ***,a meta-chip containing 8 needle meta-structure units is demonstrated,which breaks through the precision limitation of independent units and realizes super-resolution precision phase modulation similar to super-resolution *** the 213–227 GHz band,we achieve a phase shift exceeding 180°with 11.25°accuracy,and a phase shift of over 170°with an accuracy of 3°.This super-resolution phase modulation strategy provides a new idea for future highprecision applications of THz integrated systems.

关键词： tuning phase resolution

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