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Ultra-highly sensitive dual gases detection based on photoacoustic spectroscopy by exploiting a long-wave,high-power,wide-tunable,singlelongitudinal-mode solid-state laser

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Light(Science & Applications) 2024年第5期13卷 941-956页

作者： Shunda Qiao Ying He Haiyue Sun Pietro Patimisco Angelo Sampaolo Vincenzo Spagnolo Yufei Ma national key laboratory of laser Spatial Information Harbin Institute of TechnologyHarbinChina PolySense lab Dipartimento Interateneo di FisicaUniversity and Politecnico of BariVia AmendolaBariItaly

Photoacoustic spectroscopy(PAS)as a highly sensitive and selective trace gas detection technique has extremely broad application in many ***,the laser sources currently used in PAS limit the sensing *** to diode laser and quantum cascade laser,the solid-state laser has the merits of high optical power,excellent beam quality,and wide tuning *** we present a long-wave,high-power,wide-tunable,singlelongitudinal-mode solid-state laser used as light source in a PAS sensor for trace gas *** self-built solid-state laser had an emission wavelength of~2μm with Tm:YAP crystal as the gain material,with an excellent wavelength and optical power stability as well as a high beam *** wide wavelength tuning range of 9.44 nm covers the absorption spectra of water and ammonia,with a maximum optical power of~130 mW,allowing dual gas detection with a single laser *** solid-state laser was used as light source in three different photoacoustic detection techniques:standard PAS with microphone,and external-and intra-cavity quartz-enhanced photoacoustic spectroscopy(QEPAS),proving that solid-state laser is an attractive excitation source in photoacoustic spectroscopy.

关键词： power tunable tuning

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

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Journal of semiconductors 2024年第7期45卷 70-75页

作者： Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang State key laboratory of high-power semiconductor laser School of PhysicsChangchun University of Science and TechnologyChangchun 130022China Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Suzhou powerhouse Electronics Technology Co. Ltd.Suzhou 215123China

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关键词： AlGaN/GaN MIS HEMTs gate dielectric layer depletion-mode gate reliability I_(on)/I_(off)ratio

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highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing key lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

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Science China(Information Sciences) 2024年第2期67卷 335-336页

作者： Kui DANG Zhilin QIU Shudong HUO Peng ZHAN Huining LIU Yachao ZHANG Jing NING Hong ZHOU Jincheng ZHANG key lab of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University Guangzhou Wide Bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

Microwave power transmission(MPT) could realize the point-to-point long-distance transfer of energy without any wires, which makes it attractive for solar-powered satellites,drones, and implantable medical devices, and has aroused enormous attention [1]. Microwave rectifiers could convert RF(radio frequency) energy into DC(direct current) power,

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Evolutionary mechanism and frequency response of graphite electrode at extreme temperatures

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Nano Research 2024年第8期17卷 7283-7289页

作者： Shanpeng Pei Zhiyong Zhang Xiuli Zhang Yan Liu Xiang Han Linshan Luo Pengfei Su Chaofei Lan Wei Huang Ziqi Zhang Ming-Sheng Wang Songyan Chen Department of Physics Xiamen UniversityXiamen 361005China Shandong Electric power Engineering Consulting Institute Corporation Jinan 250031China State key lab of Physical Chemistry of Solid Surfaces College of MaterialsXiamen UniversityXiamen 361005China School of semiconductor Science and Technology South China Normal UniversityFoshan 528225China College of Materials Science and Engineering Nanjing Forestry UniversityNanjing 210037China national key laboratory of Integrated Circuits and Microsystems Chongqing 400000China

The battery management system is employed to monitor the external temperature of the lithium-ion battery in order to detect any potential ***,this outside–in detection method often suffers from a lag and is therefore unable to accurately predict the battery’s real-time ***,an inside–out frequency response approach is used to accurately monitor the battery’s state at various temperatures in real-time and correlate it with the solid electrolyte interphase(SEI)evolution of the graphite *** SEI evolution at temperatures of−15,25,60,and 90℃exhibits certain regular characteristics with temperature *** a temperature of−15℃,the Li^(+)-solvent interaction of lithium-ion slowed down,resulting in a significant reduction in *** 25℃,a LiF-rich inorganic SEI was identified as forming,which facilitated lithium-ion ***,high temperatures would induce decomposition of lithium hexafluorophosphate(LiPF_(6))and lithium-ion *** the extreme temperature of 90℃,the SEI would be organic-rich,and Li_(x)P_(y)F_(z),a decomposition product of lithium salts,was further oxidized to Li_(x)PO_(y)F_(z),which led to a surge in the charge-transfer resistance at SEI(R_(sei))and a reduction in Coulombic efficiency(CE).This changing relationship can be recorded in real time from the inside out by electrochemical impedance spectroscopy(EIS)*** provides a new theoretical basis for the structural evolution of lithium-ion batteries and the regular characterization of EIS.

关键词： graphite electrode solid electrolyte interphase(SEI)film extreme temperatures frequency response evolutionary mechanism

Optical and electrical anisotropy regulation engineering of low-dimensional materials toward polarized detection and imaging applications

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Rare Metals 2024年第7期43卷 2968-2993页

作者： Jian-Bin Zhang Nan Zhou Li-Hui Zhang Cong-Hui Shang Jia-Xuan Li Yi Zhao Guo-Hui Jia Ru-Sen Yang Hua Xu Xiao-Bo Li Shaanxi Joint key laboratory of Graphene Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for AerospaceShaanxi Joint Key Laboratory of GrapheneSchool of Advanced Materials and NanotechnologyXidian University Guangzhou Institute of Technology Xidian University Xi'an Thermal power Research Institute Co. Ltd key laboratory of Applied Surface and Colloid Chemistry Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal University

Polarized-sensitive image sensors are a kind of photodetector with great development potential due to their enhanced ability to detect and identify the target objects from the aspect of spatial,spectral and polarized ***,low-dimensional anisotropic materials with inherent anisotropic properties,ultrathin thickness,tunable bandgap and feasible integration with complementary metal oxide semiconductor(CMOS) fabrication processes have attracted great interest for their facilitation of polarized photodetector devices *** the polarized detection performance of low-dimensional materials to satisfy realistic needs stimulates the exploration of modulation of anisotropic *** this review,we comprehensively introduce the latest research progress in modulating the optical and optoelectronic anisotropy characteristics of low-dimensional *** strategy of anisotropy regulation through crystal structure engineering and coupling system is discussed ***,the latest progress in image recognition applications using anisotropic low-dimensional materials is reviewed in ***,we summarize the challenge and propose future opportunities in the practical application of polarized-sensitive imaging photodetectors based on low-dimensional anisotropic materials.

关键词： Anisotropy Polarized detection Image recognition Low-dimensional materials

Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections

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Science China(Information Sciences) 2024年第2期67卷 279-290页

作者： Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU State key laboratory of Integrated Service Networks Xidian University State key Discipline laboratory of Wide Bandgap semiconductor Technology School of MicroelectronicsXidian University

In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback and multiple injections. The prediction performance characteristics of the hierarchical time-delay RC system based on cascaded VCSELs under different reservoir layers are ***, the prediction performance of the hierarchical time-delay RC system is first improved and saturates as the number of reservoir layers increases. Besides, the impacts of key factors on predicting the hierarchical time-delay RC system are also analyzed in detail experimentally and numerically. This proposed hierarchical time-delay RC system based on VCSELs is useful for the further development of RC systems and may be beneficial to improve the ability of RC systems to solve more complex problems.

关键词： vertical-cavity surface-emitting laser reservoir computing neuromorphic photonics time-delay system information processing

Ultrafast laser state active controlling based on anisotropic quasi-1D material

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Light(Science & Applications) 2024年第4期13卷 717-726页

作者： Zixin Yang Qiang Yu Jian Wu Haiqin Deng Yan Zhang Wenchao Wang Tianhao Xian Luyi Huang Junrong Zhang Shuai Yuan Jinyong Leng Li Zhan Zongfu Jiang Junyong Wang Kai Zhang Pu Zhou College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China. Nanhu laser laboratory National University of Defense TechnologyChangsha 410073China. i-lab&key laboratory of Nanodevices and Applications&key laboratory of Nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China. School of Applied and Engineering Physics Cornell UniversityIthacaNY 14853USA. State key laboratory of Advanced Optical Communication Systems and Networks School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China. Shanghai key lab of Modern Optical System University of Shanghai for Science and TechnologyShanghai 200093China

laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast *** an extension of degree of freedom in optical devices based on low-dimensional materials may be a way ***,the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent *** polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states,i.e.,conventional soliton and noise-like *** laser state was switchable in the single fiber laser with a mechanism revealed by numerical *** coding was further demonstrated in this platform by employing the laser as a codable light *** work proposed an approach for ultrafast laser state active controlling with low-dimensional material,which offers a new avenue for constructing tunable on-fiber devices.

关键词： polarization fiber controlling

Construction of novel P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt heterophotocathode for enhanced photoelectrochemical water splitting

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Nano Research 2024年第5期17卷 4428-4436页

作者： Jiaru Li Jiayu Bai Songjie Hu Wenyu Yuan Yuyu Bu Xiaohui Guo key lab of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education Shaanxi Key Laboratory for Carbon Neutral TechnologyThe College of Chemistry and Materials ScienceNorthwest UniversityXi'an 710069China key lab of Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China key lab of Macromolecular Science of Shaanxi Province Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationSchool of Chemistry&Chemical EngineeringShaanxi Normal UniversityXi'an 710062China

Photoelectrochemical devices have been developed to enable the conversion of solar ***,their commercial potential is restricted by the limited stability of the materials *** enhance the stability of photocathode and its solar water splitting performance,a P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt composite photocathode is developed in this *** novel TiO_(2)/HfO_(2)/MoS_(2) serial nanostructure provides excellent stability of the photocathode,and optimizes the interface energy barrier to further facilitate the transfer process of photogenerated carriers within the *** best P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt photocathode demonstrates an initial potential of 0.5 V(***)and a photocurrent density of-29 mA/cm^(2) at 0 V(***).Through intensity modulated photocurrent spectroscopy and photoluminescence test,it is known that the enhanced water splitting performance is attributed to the optimized carrier transfer *** findings provide a feasible strategy for the stability and photon quantum efficiency enhancement of silicon-based photocathode devices.

关键词： photoelectrochemical water splitting stability surface/interface engineering HfO_(2)layer