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Physical neural networks with self-learning capabilities

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 23-42页

作者： Weichao Yu Hangwen Guo Jiang Xiao Jian Shen State Key Laboratory of Surface Physics and Institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China Department of Physics Fudan UniversityShanghai 200433China Shanghai Research Center for Quantum Sciences Shanghai 201315China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China

Physical neural networks are artificial neural networks that mimic synapses and neurons using physical systems or *** networks harness the distinctive characteristics of physical systems to carry out computations effectively,potentially surpassing the constraints of conventional digital neural networks.A recent advancement known as“physical self-learning”aims to achieve learning through intrinsic physical processes rather than relying on external *** article offers a comprehensive review of the progress made in implementing physical self-learning across various physical *** learning strategies that contribute to the realization of physical self-learning are *** challenges in understanding the fundamental mechanism of learning,this work highlights the progress towards constructing intelligent hardware from the ground up,incorporating embedded self-organizing and self-adaptive dynamics in physical systems.

关键词： self-learning physical neural networks neuromorphic computing physical learning

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Diffractive neural networks with improved expressive power for gray-scale image classification

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Photonics Research 2024年第6期12卷 1159-1166页

作者： MINJIA ZHENG WENZHE LIU LEI SHI JIAN ZI State Key Laboratory of Surface Physics Key Laboratory of Micro-and Nano-Photonic Structures(Ministry of Education)and Department of PhysicsFudan UniversityShanghai 200433China Institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China Shanghai Research Center for Quantum Sciences Shanghai 210315China

In order to harness diffractive neural networks(DNNs)for tasks that better align with real-world computer vision requirements,the incorporation of gray scale is ***,DNNs are not powerful enough to accomplish gray-scale image processing tasks due to limitations in their expressive *** our work,we elucidate the relationship between the improvement in the expressive power of DNNs and the increase in the number of phase modulation layers,as well as the optimization of the Fresnel number,which can describe the diffraction *** demonstrate this point,we numerically trained a double-layer DNN,addressing the prerequisites for intensitybased gray-scale image ***,we experimentally constructed this double-layer DNN based on digital micromirror devices and spatial light modulators,achieving eight-level intensity-based gray-scale image classification for the MNIST and Fashion-MNIST data *** optical system achieved the maximum accuracies of 95.10%and 80.61%,respectively.

关键词： process mirror limitations

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

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Journal of Semiconductors 2012年第10期33卷 62-65页

作者：彭洋洋陆科杰隋文泉 nanoelectronic platform Zhejiang-California Nanosystems InstituteZhejiang University

A two-stage 2.5-5 GHz monolithic low-noise amplifier（LNA） has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT *** achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback *** results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB *** input and output return loss exceeded -10-dB across the *** power consumption of this LNA is 33 *** to the author＇s knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

关键词： LNA GaAs pHEMT MMIC microwave

Critical Solvation Structures Arrested Active Molecules for Reversible Zn Electrochemistry

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Nano-Micro Letters 2024年第8期16卷 64-78页

作者： Junjie Zheng Bao Zhang Xin Chen Wenyu Hao Jia Yao Jingying Li Yi Gan Xiaofang Wang Xingtai Liu Ziang Wu Youwei Liu Lin Lv Li Tao Pei Liang Xiao Ji Hao Wang Houzhao Wan Hubei Yangtze Memory Laboratories Wuhan 430205People’s Republic of China Hubei Key Laboratory of Micro‑nanoelectronic Materials and Devices School of MicroelectronicsHubei UniversityWuhan 430062People’s Republic of China School of Physical and Mathematical Sciences Nanyang Technological UniversitySingapore 637371Singapore School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China Institute of Optoelectronics Technology China Jiliang UniversityHangzhou 310018People’s Republic of China

Aqueous Zn-ion batteries(AZIBs)have attracted increasing attention in next-generation energy storage systems due to their high safety and ***,the side reactions,dendrites and hydrogen evolution effects at the zinc anode interface in aqueous electrolytes seriously hinder the application of aqueous zinc-ion ***,we report a critical solvation strategy to achieve reversible zinc electrochemistry by introducing a small polar molecule acetonitrile to form a“catcher”to arrest active molecules(bound water molecules).The stable solvation structure of[Zn(H_(2)O)_(6)]^(2+)is capable of maintaining and completely inhibiting free water ***[Zn(H_(2)O)_(6)]^(2+)is partially desolvated in the Helmholtz outer layer,the separated active molecules will be arrested by the“catcher”formed by the strong hydrogen bond N-H bond,ensuring the stable desolvation of Zn^(2+).The Zn||Zn symmetric battery can stably cycle for 2250 h at 1 mAh cm^(-2),Zn||V_(6)O_(13) full battery achieved a capacity retention rate of 99.2%after 10,000 cycles at 10 A g^(-1).This paper proposes a novel critical solvation strategy that paves the route for the construction of high-performance AZIBs.

关键词： Zinc-ion battery Critical solvation Helmholtz layer Arrest active molecule Reversible zinc anode

Polarization-dependent photoinduced metal–insulator transitions in manganites

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Science Bulletin 2024年第2期69卷 183-189页

作者： Lina Deng Weiye Zhang Hanxuan Lin Lifen Xiang Ying Xu Yadi Wang Qiang Li Yinyan Zhu Xiaodong Zhou Wenbin Wang Lifeng Yin Hangwen Guo Chuanshan Tian Jian Shen State Key Laboratory of Surface Physics Institute for Nanoelectronic Devices and Quantum Computingand Department of PhysicsFudan UniversityShanghai 200433China Shanghai Research Center for Quantum Sciences Shanghai 201315China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China Shanghai Branch CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum PhysicsShanghai 201315China

In correlated oxides,collaborative manipulation on light intensity,wavelength,pulse duration and polarization has yielded many exotic discoveries,such as phase transitions and novel quantum *** view of potential optoelectronic applications,tailoring long-lived static properties by light-induced effects is highly *** far,the polarization state of light has rarely been reported as a control parameter for this ***,we report polarization-dependent metal-to-insulator transition(MIT)in phaseseparated manganite thin films,introducing a new degree of freedom to control static ***,we observed giant photoinduced resistance jumps with striking features:(1)a single resistance jump occurs upon a linearly polarized light incident with a chosen polarization angle,and a second resistance jump occurs when the polarization angle changes;(2)the amplitude of the second resistance jump depends sensitively on the actual change of the polarization *** transmittance measurements reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic *** results represent a first step to utilize light polarization as an active knob to manipulate static phase transitions,pointing towards new pathways for nonvolatile optoelectronic devices and sensors.

关键词： Metal-insulator phase transitions Polarization of light Electronic phase separation Selective domain controllability

Reconfigurable memlogic long wave infrared sensing with superconductors

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Light(Science & Applications) 2024年第5期13卷 908-920页

作者： Bingxin Chen Huanyi Xue Hong Pan Liping Zhu Xiaomi Yan Jingzhe Wang Yanru Song Zhenghua An State Key Laboratory of Surface Physics and Institute for nanoelectronic Devices and Quantum Computing Department of PhysicsFudan UniversityShanghai 200438China. ShanghaiTech Quantum Device Lab ShanghaiTech UniversityShanghai 201210China. Shanghai Qi Zhi Institute 41th FloorAI TowerNo.701 Yunjin RoadXuhui DistrictShanghai 200232China. Yiwu Research Institute of Fudan University Chengbei RoadYiwu City 322000 ZhejiangChina. Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China

Optical sensors with in-cell logic and memory capabilities offer new horizons in realizing machine vision beyond von Neumann architectures and have been attempted with two-dimensional materials,memristive oxides,phasechanging materials *** the unparalleled performance of superconductors with both quantum-limited optical sensitivities and ultra-wide spectrum coverage,here we report a superconducting memlogic long-wave infrared sensor based on the bistability in hysteretic superconductor-normal phase *** cooperatively by electrical and optical pulses,the device offers deterministic in-sensor switching between resistive and superconducting(hence dissipationless)states with persistence>105 *** results in a resilient reconfigurable memlogic system applicable for,e.g.,encrypted ***,a high infrared sensitivity at 12.2μm is achieved through its in-situ metamaterial perfect absorber *** work opens the avenue to realize all-in-one superconducting memlogic sensors,surpassing biological retina capabilities in both sensitivity and wavelength,and presents a groundbreaking opportunity to integrate visional perception capabilities into superconductor-based intelligent quantum machines.

关键词： wave superconductor quantum

Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd_(2)As_(2)

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Science China(Physics,Mechanics & Astronomy) 2024年第4期67卷 119-125页

作者： Yuxiang Wang Jianwen Ma Jian Yuan Wenbin Wu Yong Zhang Yicheng Mou Jiaming Gu Peihong Cheng Wu Shi Xiang Yuan Jinglei Zhang Yanfeng Guo Cheng Zhang State Key Laboratory of Surface Physics and Institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory of the Chinese Academy of SciencesHefei 230031China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China ShanghaiTech Laboratory for Topological Physics Shanghai 201210China

EuCd_(2)As_(2)was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet ***,the heavily p-doped Eu Cd_(2)As_(2)crystals in previous experiments prevent direct identification of the semimetal ***,we present a comprehensive magneto-transport study of high-quality Eu Cd_(2)As_(2)crystals with ultralow bulk carrier density(10^(13)cm^(-3)).In contrast to the general expectation of a Weyl semimetal phase,Eu Cd_(2)As_(2)shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band ***,the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude,and induce a periodic resistance oscillation due to the geometric *** nonlinear transport results from the high nonequilibrium state induced by an electrical field near the band *** results suggest an insulating phase in Eu Cd_(2)As_(2)and put a strong constraint on the underlying mechanism of anomalous transport properties in this system.

关键词： magnetic Weyl semimetal quantum transport Hall effect nonlinear resistivity

Realization of skyrmion shift register

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Science Bulletin 2024年第15期69卷 2370-2378页

作者： Le Zhao Chensong Hua Chengkun Song Weichao Yu Wanjun Jiang State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China Frontier Science Center for Quantum Information Tsinghua UniversityBeijing 100084China State Key Laboratory of Surface Physics and Institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China

The big data explosion demands novel data storage technology. Among many different approaches, solitonic racetrack memory devices hold great promise for accommodating nonvolatile and low-power functionalities. As representative topological solitons, magnetic skyrmions are envisioned as potential information carriers for efficient information processing. While their advantages as memory and logic elements have been vastly exploited from theoretical perspectives, the corresponding experimental efforts are rather limited. These challenges, which are key to versatile skyrmionic devices, will be studied in this work. Through patterning concaved surface topography with designed arrays of indentations on standard Si/SiO_(2) substrates, we demonstrate that the resultant non-flat energy landscape could lead to the formation of hexagonal and square skyrmion lattices in Ta/CoFeB/MgO multilayers. Based on these films, one-dimensional racetrack devices are subsequently fabricated, in which a long-distance deterministic shifting of skyrmions between neighboring indentations is achieved at room temperature. Through separating the word line and the bit line, a prototype shift register device, which can sequentially generate and precisely shift complex skyrmionic data strings, is presented. The deterministic writing and longdistance shifting of skyrmionic bits can find potential applications in transformative skyrmionic memory,logic as well as the in-memory computing devices.

关键词： Skyrmions Racetrack memory Spintronics Surface-topography Indentations

Quantum control for time-dependent noise by inverse geometric optimization

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Science China(Physics,Mechanics & Astronomy) 2024年第9期67卷 51-57页

作者： Xiaodong Yang Yingcheng Li Ran Liu Xinfang Nie Tao Xin Dawei Lu Jun Li Institute of Quantum Precision Measurement State Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Surface Physics Department of PhysicsCenter for Field Theory and Particle Physicsand Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen 518045China

Quantum systems are exceedingly difficult to engineer because they are sensitive to various types of *** particular,timedependent noises are frequently encountered in experiments but how to overcome them remains a challenging *** this work,we propose a flexible robust control technique to resist time-dependent noises based on inverse geometric optimization working in the filter-function *** basic idea is to parameterize the control filter function geometrically and minimize its overlap with the noise spectral *** then effectively reduces the noise susceptibility of the controlled system *** show that the proposed method can produce high-quality robust pulses for realizing desired quantum evolutions under realistic noise ***,we demonstrate this method in examples including dynamical decoupling and quantum sensing protocols to enhance their performances.

关键词： time-dependent noise robust control quantum gates and states dynamical decoupling quantum sensing

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