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Simulation of the Temperature Dependence of the Density of States in a Strong Magnetic Field

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Journal of Modern Physics 2014年第8期5卷 680-685页

作者： G. Gulyamov U. I. Erkaboev N. Yu. Sharibaev namangan engineering pedagogical institute Namangan Uzbekistan

The temperature dependence of the density of states in strong magnetic fields. On the basis of the model constructed, a computer program calculating the density of electronic states in a quantizing magnetic field. Used new, based on quantum statistics, the approach to the calculation of the temperature dependence of the density of states in a strong magnetic field. Mathematical modeling of the density of states using the experimental values of a continuous density of states makes it possible to calculate the Landau levels.

关键词： Cyclotron Frequency and Effective Mass A Quantizing Magnetic Field Landau Levels the Energy Spectrum the Numerical Simulation and Experiment

EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

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Journal of Electromagnetic Analysis and Applications 2015年第12期7卷 302-307页

作者： Gafur Gulyamov Muhammadjon Gulomkodirovich Dadamirzaev Nosir Yusupjanovich Sharibayev Ne’matjon Zokirov namangan engineering pedagogical institute Namangan Uzbekistan

It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

关键词： photocurrent lasing and recombination currents hot electrons the microwave field light p-n-junction

The Temperature Dependence of the Density of States in Semiconductors

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World Journal of Condensed Matter Physics 2013年第4期3卷 216-220页

作者： Gafur Gulyamov Nosir Yusupjanovich Sharibaev Ulugbek Inoyatillaevich Erkaboev namangan engineering pedagogical institute Namangan Uzbekistan namangan engineering pedagogical institute Namangan Uzbekistan namangan engineering institute of Technology Namangan Uzbekistan

The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi2-xSbxTe3-ySey. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.

关键词： Band Gap The Effective Mass Density of States The Energy Spectrum The Numerical Simulation and Experiment

Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field

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World Journal of Condensed Matter Physics 2015年第1期5卷 48-53页

作者： G. Gulyamov M. G. Dadamirzaev namangan engineering pedagogical institute Namangan Uzbekistan

The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.

关键词： Hot Electrons The Microwave Field The Open Circuit Voltage Short Circuit Current CVC p-n-Junction

Active and Capacitive Conductance of the Diode in a Strong Microwave Field

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Journal of Applied Mathematics and Physics 2015年第12期3卷 1684-1687页

作者： Muhammadjon Gulomkodirovich Dadamirzaev namangan engineering pedagogical institute Namangan Uzbekistan

It is shown that the mean value of the capacitive current arising in the p-n-junction in a microwave field is zero, and the average value of the active current independently of the current value is different from zero... 详细信息

关键词： Hot Electrons The Microwave Field The Active and Capacitive Conductivity Fault Current p-n-Junction

The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field

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Journal of Modern Physics 2015年第15期6卷 2275-2279页

作者： Muhammadjon Gulomkodirovich Dadamirzaev namangan engineering pedagogical institute Namangan Uzbekistan

For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.

关键词： Hot Electrons and Holes The Microwave Field p-n-Junction Light Photocurrent Lasing and Recombination Currents Deformation CVC Strain p-n-Junction

Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field

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Journal of Modern Physics 2015年第2期6卷 176-180页

作者： Muhammadjon Gulomkodirovich Dadamirzayev namangan engineering pedagogical institute Namangan Uzbekistan

This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.

关键词： Microwave Electromagnetic Field Deformation Effects in Semiconductors The Concentration of Minority Carriers The Current-Voltage Characteristic of the p-n-Junction The Temperature of the Electrons and Holes

Effects of Band Nonparabolicity and Band Offset on the Electron Gas Properties in InAs/AlSb Quantum Well

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Journal of Modern Physics 2016年第13期7卷 1644-1650页

作者： Gafur Gulyamov Bahrom Toshmirza O’g’li Abdulazizov Baymatov Paziljon Jamoldinovich namangan engineering-pedagogical institute Namangan Uzbekistan namangan State University Namangan Uzbekistan

One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.

关键词： Quantum Well In-Plane Dispersion InAs AlSb Two Dimentional Electron Gas Effective Mass Cyclotron Mass

The Temperature Dependence of the Thermodynamic Density of States and Urbach Rule

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World Journal of Condensed Matter Physics 2015年第1期5卷 43-47页

作者： G. Gulyamov N. Yu. Sharibaev U. I. Erkaboev namangan engineering pedagogical institute Namangan Uzbekistan namangan engineering Technological institute Namangan Uzbekistan

It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical modeling, it shows that the thermal broadening of the energy states of the conduction band and the discrete states in the band gap can cause long-wave decline according to the Urbach rule.

关键词： The Density of States The Absorption Coefficient The Fundamental Absorption The Urbach Rule