检索结果-南通市图书馆

Potential of silicon carbide MOSFETs in the DC/DC converters for future HVDC offshore wind farms

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

High Voltage 2017年第4期2卷 233-243页

作者： Thomas Lagier Philippe Ladoux Piotr Dworakowski SuperGrid Institute 130rue Léon BlumVilleurbanneFrance LAPLACE Universitéde ToulouseCNRSINPTUPS2 rue Charles CamichelToulouseFrance Thomas

High-voltage direct current(HVDC)is more and more often implemented for long distance electrical energy transmission,especially for off-shore wind *** this study,a full DC off-shore wind farm,which requires a high-power and high-voltage DC/DC converter,is *** order to reduce the size of the converter,the trend is to increase operating *** carbide(SiC)metal–oxide–semiconductor field-effect transistors(MOSFETs)are becoming industrially available and give scope for the realisation of high-performance DC/DC converters based on modular *** study presents a prospective analysis of the potential of such devices in HVDC power *** the characteristics of Si insulated-gate bipolar transistor and SiC MOSFET power modules,two DC/DC converter topologies are compared in terms of losses and number of *** conclusion,a study of the efficiency based on converter energy loss is presented.

关键词： MOSFETs converter bipolar

Implicit-Explicit Runge-Kutta Schemes for the Boltzmann-Poisson System for semiconductors

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Communications in Computational Physics 2014年第5期15卷 1291-1319页

作者： Giacomo Dimarco Lorenzo Pareschi Vittorio Rispoli Universite de toulouse UPSINSAUT1UTMCNRSUMR 5219Institut de Mathematiques de ToulouseF-31062 ToulouseFrance Department of Mathematics and Computer Science University of Ferraravia Machiavelli 3544121 FerraraItaly.

In this paper we develop a class of Implicit-Explicit Runge-Kutta schemes for solving the multi-scale semiconductor Boltzmann *** relevant scale which characterizes this kind of problems is the diffusive *** means that,in the limit of zero mean free path,the system is governed by a drift-diffusion *** aim is to develop a method which accurately works for the different regimes encountered in general semiconductor simulations:the kinetic,the intermediate and the diffusive ***,we want to overcome the restrictive time step conditions of standard time integration techniques when applied to the solution of this kind of phenomena without any deterioration in the *** a result,we obtain high order time and space discretization schemes which do not suffer from the usual parabolic stiffness in the diffusive *** show different numerical results which permit to appreciate the performances of the proposed schemes.

关键词： IMEX-RK methods asymptotic preserving methods semiconductor Boltzmann equation drift-diffusion limit

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

利用IGBT晶体管构成电池充电电路

电子设计技术 1999年第7期 47-48页

作者： Christiophe Basso motorola SPS toulouse france

便携式设备的电源必须重量轻,体积小,而且还应能给国际旅行者提供方便的万用输入插头。虽然各种开关电源配用万用插头会带来方便,但它们的价格比各种基于变压器的标准线性电源昂贵得多。新近推出的绝缘栅双极晶体管(IGBT),却能提供一种... 详细信息

便携式设备的电源必须重量轻,体积小,而且还应能给国际旅行者提供方便的万用输入插头。虽然各种开关电源配用万用插头会带来方便,但它们的价格比各种基于变压器的标准线性电源昂贵得多。新近推出的绝缘栅双极晶体管(IGBT),却能提供一种用交流电源线给电池充电的廉价方法。图1所示的MMG05N60D晶体管

关键词：充电电路 IGBT 电池

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

用一只晶体管迅速唤醒LDO稳压器

电子设计技术 1999年第3期 47-47页

作者： Christophe Basso motorola semiconductor toulouse france

许多便携式装置,例如电话手机,就大量使用各种低压降稳压电源(low-dropoutregulator)。这些装置即使在稳定的供电线路中也提供对噪声敏感的部件。当电话进入备用状态时,通过控制LDO的输出而使其大部分电路进入休眠状态。其工作电流从而... 详细信息

许多便携式装置,例如电话手机,就大量使用各种低压降稳压电源(low-dropoutregulator)。这些装置即使在稳定的供电线路中也提供对噪声敏感的部件。当电话进入备用状态时,通过控制LDO的输出而使其大部分电路进入休眠状态。其工作电流从而降到最低值。当用户开始拨号时,

关键词： LDO 晶体管半导体三极管旁路电容器

Simulation of Space Charge Impact on Partial Discharge Inception Voltage in Power Busbars Dedicated to Future Hybrid Aircrafts

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Circuits and Systems 2018年第11期9卷 196-212页

作者： Mallys Elliazar Banda David Malec Jean-Pascal Cambronne Laboratoire de Plasma et Conversion d’Energie Université de Toulouse-CNRS-INPT-UPS France

Reducing greenhouse gases, saving energy resources and mass optimization require technological changes towards increasingly electric vehicles. At the same time, performance improvement of semiconductor and dielectric materials further promotes electronic components confinement, resulting in a significant increase of embedded power densities. In the particular case of future hybrid propulsion aircrafts, electrical power that intended to supply reactors would be converted through power electronics components mounted on power busbars and insulated by solid dielectrics materials. These dielectrics materials have to respond to various electrical constraints of use (HVDC), in spite of environment change of aircraft parameters such as low pressure, temperature and thermal cycles, humidity... Unfortunately, partial discharges phenomenon is the most problem within electrical insulation system (EIS). Based on a topological model of power busbars designed for power converters dedicated to hybrid aircraft, partial discharge studies were conducted by simulation in various charging conditions of a PTFE insulator. Simulation results, which focus on electric field thresholds criteria of partial discharge inception voltage in air, reveal a net sensitivity of a space charge accumulation and distribution on dielectrics behaviour even for low space charge density, depending on their location in dielectrics. Compared to the behaviour observed with implanted homocharges, when by increasing homocharges density from 0.5 C/m3 to 2 C/m3 we observe a decrease of electric field by 450%, simulation results show a highest risk of partial discharge inception when heterocharges are accumulated inside dielectrics. Their accumulation increases the electric field in triple points beyond electric field thresholds of partial discharge inception in air. The simulated electric field reaching 22 kV/mm with only 2 C/m3 of heterocharges density accumulated in dielectric/busbars interfaces.

关键词： Simulation Partial Discharge Space Charge Power Busbars Hybrid Aircraft

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

待机功耗仅43mW的开关电源

电子设计技术 2000年第2期 44-44页

作者： Christophe Basso Francois Lhermite motorola SPS toulouse france motorola SPS toulouse france

开关电源的效率高于线性电源。但是,在负载很小时、开关电源(SMPS)的效率将严重降低,在空载时的换向功耗会超过1W。解决这个问题的一个方法是采用滞后电路,它产生一系列高频脉冲,通过一个阈值电压来控制输出,如高于阈值电压,则脉冲停止... 详细信息

开关电源的效率高于线性电源。但是,在负载很小时、开关电源(SMPS)的效率将严重降低,在空载时的换向功耗会超过1W。解决这个问题的一个方法是采用滞后电路,它产生一系列高频脉冲,通过一个阈值电压来控制输出,如高于阈值电压,则脉冲停止输出,如输出电压又降低到阈值以下,则又恢复脉冲输出。

关键词：开关电源稳压电源峰值电流漏极电压

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

为控制器提供过热保护的晶体管电路

电子设计技术 2002年第2期 54-54页

作者： Christophe Basso france On semiconductor toulouse

当一台开关电源控制器,例如Onsemiconductor公司的NCP1200,工作在较高的环境温度条件下时,就应当采取措施来保护整个电源装置不至因致命的过热而失控。NCP1200可直接由电力线供电,而不需要附加的绕组。因而,集成电路管芯片便可用于散热(... 详细信息

当一台开关电源控制器,例如Onsemiconductor公司的NCP1200,工作在较高的环境温度条件下时,就应当采取措施来保护整个电源装置不至因致命的过热而失控。NCP1200可直接由电力线供电,而不需要附加的绕组。因而,集成电路管芯片便可用于散热(图1)。但遗憾的是,电路内部的过热关机电路并不能执行其保护功

关键词：双极晶体管 BC 控制器调节器闸流管

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

提供1瓦功率的开环电源

电子设计技术 2001年第8期 71-71页

作者： Christophe Basso Cedex france On semiconductor toulouse

对于录像机、电视机和其他需要备用模式的设备,当处于睡眠状态的其他部件接收到并解释来自遥控系统或广播公司的信号时,就必须向微处理器(μP)提供能源。这类型系统的功耗相当低,而且传统的开关模式电源集成电路不能准确提供低于1W的输... 详细信息

对于录像机、电视机和其他需要备用模式的设备,当处于睡眠状态的其他部件接收到并解释来自遥控系统或广播公司的信号时,就必须向微处理器(μP)提供能源。这类型系统的功耗相当低,而且传统的开关模式电源集成电路不能准确提供低于1W的输出功率。任何有源的电源电路需要比采用金属变压器的标准结构具备更高的性价比。图1中电路没有使用光耦合器,因而降低了成本。

关键词：电源峰值电流控制器调节器

A SCATTERING MATRIX MODEL OF semiconductor SUPERLATTICES IN MULTIDIMENSIONAL WAVE-VECTOR SPACE AND ITS DIFFUSION LIMIT

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Annals of Mathematics,Series B 2003年第2期24卷 167-190页

作者： P.DEGOND ZHANGKAIJUN Mathematiquespourl‘IndustrieetlaPhysique UMRCNRS5640UniversitePaulSabatier118routedeNarbonne31062ToulousecedexFrance. DepartmentofMathematics NortheastNormalUniversityChangchun130024China.

The authors first establish a quantum microscopic scattering matrix model in multidimen-sional wave-vector space, which relates the phase space density of each superlattice cell withthat of the neighbouring cells. Then, in the limit of a large number of cells, a SHE (SphericalHarmonics Expansion)-type model of diffusion equations for the particle number density in theposition-energy space is obtained. The crucial features of diffusion constants on retaining thememory of the quantum scattering characteristics of the superlattice elementary cell (like *** resonances) are shown in order. Two examples are treated with the analyticallycomputation of the diffusion constants.

关键词：散射矩阵模型半导体超格波向量空间扩散极限球面调和展开能量迁移共振

维普期刊数据库