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A fully-differential phase-locked loop frequency synthesizer for 60-GHz wireless communication

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Journal of Semiconductors 2014年第12期35卷 62-67页

作者：况立雪池保勇陈磊贾雯王志华 Institute of microelectronics Tsinghua University research Institute of Tsinghua University in Shenzhen

A 40-GHz phase-locked loop（PLL） frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator（VCO） to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector（PFD）and the charge pump（CP） are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 dBc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.

关键词： millimeter-wave frequency synthesizer quadrature injection-locked divider CMOS

Auger Depth Profiling of Carbonized SiC/Si Samples

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Journal of Materials Science & Technology 1997年第6期13卷 499-502页

作者： Shahzad Naseem and Shazia Yasin(centre for Solid State Pliysics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan) centre for Solid State Physics University of the Punjab Quaid-e-Azam Campus Lahore-54590 Pakistan microelectronics research centre Cavendish Lab. University of Cambridge Cambridge CB3 OHE Madingley Road United Kingdom

Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are *** profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.

关键词： SiC Auger Depth Profiling of Carbonized SiC/Si Samples

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

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Science China(Information Sciences) 2021年第6期64卷 196-202页

作者： Zhiqiang CAO Yiming WEI Wenjing CHEN Shaohua YAN Lin LIN Zhi LI Lezhi WANG Huaiwen YANG Qunwen LENG Weisheng ZHAO Beihang-Geortek Joint microelectronics Institute Qingdao Research InstituteBeihang University Fert Beijing Institute BDBCSchool of MicroelectronicsBeihang University Goertek Inc.

The Internet of Things has created an increasing demand for giant magnetoresistive(GMR)sensor owing to its high sensitivity, low power-consumption and small size. A full Wheatstone bridge GMR sensor is fabricated on 6-inch wafers with an annealing process on patterned devices. It can be observed that GMR resistors could have different pinning directions in one wafer by magnetic resistance measurements and MATLAB simulations. The full Wheatstone bridge device shows a sensitivity of 2 mV/V/mT in a linear range of ±6 mT, and its angular response to the surrounding magnetic field is as low as 0.08 mT. These results demonstrate a new approach to high-sensitive and low-cost GMR sensors with a controllable post annealing process.

关键词： GMR sensor full Wheatstone bridge annealing simulation

An AP SoC for a unified architecture

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Chinese Science Bulletin 2010年第35期55卷 4089-4093页

作者： SHEN XuBang ZHAO CuiHua Xi'an microelectronics research Institute Xi'an 710054 China

An instruction level parallel computing paradigm and a unified architecture for an array processor(AP) on a chip(SoC) are presented in this *** "APU SoC" is short for "an AP SoC for the unified architecture".The MISD/MIMD architecture for instruction level parallel computing is unified with the SIMD architecture for data level parallel *** a result,all the computing can be implemented on an APU *** APU SoC offers the rationale of an array structure for development in current technology,yet simplicity for the hardware(chip) and software(program) parallel *** as a single processor chip can replace many function module chips,the APU SoC can replace the single-core/multi-core/many-core CPU chip for TLP computing and the ASIC/ASSP/FPGA/RC device array chip for Operation Level Parallel computing.

关键词： SoC 架构处理器芯片指令级并行并行计算阵列芯片多功能模块 CPU芯片

A wideband on-chip millimeter-wave patch antenna in 0.18 μm CMOS

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Journal of Semiconductors 2013年第10期34卷 144-148页

作者：孟祥雨池保勇贾海坤况立雪贾雯王志华 Institute of microelectronics Tsinghua University research Institute of Tsinghua University in Shenzhen

A wideband on-chip millimeter-wave patch antenna in 0.18 μm CMOS with a low-resistivity （10 Ω.cm） silicon substrate is presented. The wideband is achieved by reducing the Q factor and exciting the high-order radiation modes with size optimization. The antenna uses an on-chip top layer metal as the patch and a probe station as the ground plane. The on-chip ground plane is connected to the probe station using the inner connection structure of the probe station for better performance. The simulated S11 is less than -10 dB over 46-95 GHz, which is well matched with the measured results over the available 40-67 GHz frequency range from our measurement equipment. A maximum gain of-5.55 dBi with 4% radiation efficiency at a 60 GHz point is also achieved based on Ansofi HFSS simulation. Compared with the current state-of-the-art devices, the presented antenna achieves a wider bandwidth and could be used in wideband millimeter-wave communication and image applications.

关键词： on-chip antenna patch antenna wideband antenna millimeter-wave

Structural and micro structural studies of PbO-doped SnO_2 sensor for detection of methanol, propanol and acetone

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Journal of Natural Gas Chemistry 2011年第2期20卷 179-183页

作者： J. K. Srivastava Preeti Pandey V. N. Mishra R. Dwivedi Center for research in microelectronics Department of Electronics Engineering Institute of Technology Banaras Hindu University

In the present work the structural information of PbO-doped SnO2 thick film sensor has been investigated with X-ray diffractometer （XRD） and scanning electron microscope （SEM）. Initially, SnO2 powder was derived using sol-gel process and was subsequently doped with PbO and ground up to nanosized particles. A suitable gas sensor structure was fabricated on 1′′×1′′ alumina substrate using thick film technology. The necessary paste for screen printing was also developed. SEM results showed sol-gel derived powder gets more agglomerated in the thick film form. The sensitivity of the sensor has been investigated at different temperatures （150 ？C？350 ？C） upon exposure to methanol, propanol and acetone, yielding a maximum at 250 ？C for acetone with 1 wt% PbO-doping while at 350 ？C for propanol with 3 wt% PbO-doping of the sensor. The reduction of particle size to nanometers （validated through XRD） leads to a dramatic improvement in sensitivity of sensors for the chosen organic vapors. The results also correlate well with the microstructural properties of the material and the dopant.

关键词： gas sensor nanosized SnO2 Sol-gel thick film

Pd-gate MOS sensor for detection of methanol and propanol

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Journal of Natural Gas Chemistry 2011年第2期20卷 123-127页

作者： Preeti Pandey J. K. Srivastava V. N. Mishra R. Dwivedi Center for research in microelectronics Department of Electronics Engineering Institute of Technology Banaras Hindu University

The present paper focused on the detection of methanol and propanol using Pd-gate metal-oxide-semiconductor （MOS） sensor. Surface mor- phology and composition of the gate film were studied by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The response of the sensor for propanol and methanol was measured as shift in capacitance-voltage （C-V） and conductance-voltage （G-V） curves of the MOS structure. The sensitivity of the sensor towards methanol was found to be greater than that towards propanol. It was 58.2% for methanol and 32% for propanol （at 0.6 V, 1 MHz） in terms of capacitance measurements, while in terms of conductance results the sensitivity was found to be 57.2% for methanol and 38.9% for propanol at 1 kHz. The discontinuities or cracks present in the microstructure of the gate material are believed to be mainly responsible for the high sensitivity of the sensor, going with the decomposition of gas molecules and subsequent hydrogen permeation through Pd.

关键词： MOS structure gas sensor palladium cracks sensitivity

P-type double gate junctionless tunnel field effect transistor

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Journal of Semiconductors 2014年第1期35卷 27-33页

作者： M.W.Akram Bahniman Ghosh Punyasloka Bal Partha Mondal Department of Electrical Engineering Indian Institute of Technology Kanpur microelectronics research Center

We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.

关键词： junctionless field effect transistor tunnel field effect transistor subthreshold slope

Epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer

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Journal of Rare Earths 2013年第11期31卷 1092-1095页

作者：张心强屠海令魏峰熊玉华杨萌萌赵洪滨杜军王文武 Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals National Engineering research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Key Laboratory of microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.

关键词： dielectric material epitaxial growth interface Gd203 HfO2 rare earths