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Observation of stabilized negative capacitance effect in hafnium-based ferroic films

Materials Futures 2024年第1期3卷 1-9页

作者： Leilei Qiao Ruiting Zhao Cheng Song Yongjian Zhou Qian Wang Tian-Ling Ren Feng Pan Key Laboratory of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Institute of microelectronics&Beijing National Research center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China

A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor *** particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic ***,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor *** stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based *** difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution ***,we prepare epitaxial ferroelectric Hf_(0.5)Zr_(0.5)O_(2) and antiferroelectric ZrO_(2) films with single-phase structure and observe the capacitance enhancement effect of Hf_(0.5)Zr_(0.5)O_(2)/Al_(2)O_(3) and ZrO_(2)/Al_(2)O_(3) capacitors compared to that of the isolated Al_(2)O_(3) capacitor,verifying the stabilized NC *** capacitance of Hf_(0.5)Zr_(0.5)O_(2) and ZrO_(2) is evaluated as−17.41 and−27.64 pF,*** observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.

关键词： negative capacitance effect fluorite structure hafnium-based ferroelectrics antiferroelectric

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High-Performance Inverted Perovskite Solar Cells with Sol-Gel-Processed Sliver-Doped NiOx Hole Transporting Layer

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Energy & Environmental Materials 2024年第4期7卷 205-214页

作者： Haibin Wang Zhiyin Qin Xinjian Li Chun Zhao Chao Liang School of Advanced Technology Xi'an Jiaotong-Liverpool University Department of Electrical Engineering and Electronics University of Liverpool School of Humanities and Social Sciences Xi'an Jiaotong-Liverpool University Key Laboratory of Materials Physics of Ministry of Education School of Physics and Microelectronics Zhengzhou University MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of Physics National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology Xi'an Jiaotong University

Nickel oxide （NiOx） has been established as a highly efficient and stable holetransporting layer （HTL） in perovskite solar cells （PSCs）.However,existing deposition methods for NiOxhave been restricted by high-vacuum processes and fail to address the energy level mismatch at the NiOx/perovskite interface,which has impeded the development of PSCs.

关键词： Ag-NiOX/NiOX hole transporting layer inverted perovskite solar cells

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Ternary superhydrides for high-temperature superconductivity at low pressures

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National Science Review 2024年第7期11卷 12-14页

作者： Pengfei Shan Liang Ma Jinguang Cheng Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences School of Physical Sciences University of Chinese Academy of Sciences Key Laboratory of Materials Physics Ministry of Education School of Physics and Microelectronics Zhengzhou University

The quest for room-temperature superconductivity(RTSC) has been a longstanding pursuit in physics since the discovery of superconductivity in *** to the conventional Bardeen-Cooper-Schrieffer theory, atomic metallic hydrogen holds great promise for achieving this goal due to its high Debye temperature and strong electron-phonon coupling.

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Wearable pressure sensors based on antibacterial and porous chitosan hydrogels for full-range human motion detection

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Science China(Technological Sciences) 2024年第8期67卷 2475-2484页

作者： ZHANG YingXin LIU HanGuang JIN ShunYu LI YaJuan ZHANG Wan ZHOU Hang NIE ZanXiang HUANG Yuan School of microelectronics Science and Technology Sun Yat-sen UniversityGuangzhou 510275China Hefei National Research center for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230022China Department of Clinical Laboratory the First Affiliated Hospital of Anhui Medical UniversityHefei 230022China School of Electronic and Computer Engineering Peking University Shenzhen Graduate SchoolShenzhen 518055China Zinergy Shenzhen Ltd. Shenzhen 518109China

Wearable pressure sensors made from conductive hydrogels hold significant potential in health ***,limited pressure range(Pa to hundreds of kPa)and inadequate antibacterial properties restrict their practical applications in diagnostic and health ***,a wearable high-performance pressure sensor was assembled using a facilely prepared porous chitosan-based hydrogel,which was constructed from commercial phenolphthalein particles as a sacrificial *** relationship between the porosity of hydrogels and sensing performance of sensors was systematically ***,the wearable pressure sensor,featuring an optimized porosity of hydrogels,exhibits an ultrawide sensing capacity from 4.83 Pa to 250 k Pa(range-to-limit ratio of 51,760)and high sensitivity throughout high pressure ranges(0.7 kPa~(-1),120–250 kPa).The presence of chitosan endows these hydrogels with outstanding antibacterial performance against *** and ***,making them ideal candidates for use in wearable *** features allow for a practical approach to monitor full-range human motion using a single device with a simple structure.

关键词： porous hydrogels antibacterial performances wearable pressure sensors full-range human motion chitosan

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Super retina TFT based full color microLED display via laser mass transfer

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Science China(Information Sciences) 2024年第11期67卷 5-19页

作者： Xu YANG Jinchai LI Xuhui PENG Chunfeng ZHAO Chao CHEN Xiaowei ZHANG Jinliang LIN Donghua LI Yuefen CHEN Zhaoxia BI Feng QIN Cheng LI Kai HUANG Junyong KANG Rong ZHANG Fujian Key Laboratory of Semiconductor Materials and Applications CI Center for OSEDEngineering Research Center of Micro-nano Optoelectronic Materials and Devices Ministry of EducationDepartment of Physics Xiamen University Future Display Institute of Xiamen Tianma microelectronics Co. Ltd. School of Electronic Science and Engineering Xiamen University Tianma Advanced Display Technology Institute (Xiamen) Co. Ltd.

MicroLED display is considered one of the most promising technologies for next-generation displays. However, the high manufacturing cost has been a major obstacle to its accessibility to the general consumer market, and mass transfer, an essential process to achieve cost-effective manufacturing, has not yet reached commercial maturity. Critical issues, such as microLED chips, transfer equipments, and process materials, need to be addressed for the mass transfer technologies. In this work, we present a 1.63-inch full color microLED display module fabricated with laser mass transfer, which has a pixel density of 403 pixels per inch(PPI), the highest resolution ever achieved in the industry using mass transfer technologies. The laser mass transfer is realized with three process nodes: laser lift-off, laser induced forward transfer, and carrier bonding. Each node has been well explored to improve yields. Insights into the present progress and the future development of the laser mass transfer will be shared in this work.

关键词： microLED mass transfer LLO chip on wafer chip on carrier

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Noninvasive Diagnostic Technique for Nonalcoholic Fatty Liver Disease Based on Features of Tongue Images

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Chinese Journal of Integrative Medicine 2024年第3期30卷 203-212页

作者： WANG Rong-rui CHEN Jia-liang DUAN Shao-jie LU Ying-xi CHEN Ping ZHOU Yuan-chen YAO Shu-kun Graduate School of Beijing University of Chinese Medicine Beijing100029China Department of Gastroenterology China-Japan Friendship HospitalBeijing100029China center of Integrative Medicine Beijing Ditan HospitalCapital Medical UniversityBeijing100015China Nanjing Linkwah Micro-electronics Institute Beijing100191China Institute of microelectronics Tsinghua UniversityBeijing100084China Peking University China-Japan Friendship School of Clinical Medicine Beijing100029China

Objective:To investigate a new noninvasive diagnostic model for nonalcoholic fatty liver disease(NAFLD) based on features of tongue ***:Healthy controls and volunteers confirmed to have NAFLD by liver ultrasound were recruited from China-Japan Friendship Hospital between September 2018 and May 2019,then the anthropometric indexes and sampled tongue images were *** tongue images were labeled by features,based on a brief protocol,without knowing any other clinical data,after a series of corrections and data *** algorithm was trained on images using labels and several anthropometric indexes for inputs,utilizing machine learning ***,a logistic regression algorithm and a decision tree model were constructed as 2 diagnostic models for ***:A total of 720 subjects were enrolled in this study,including 432 patients with NAFLD and 288 healthy *** them,482 were randomly allocated into the training set and 238 into the validation *** diagnostic model based on logistic regression exhibited excellent performance:in validation set,it achieved an accuracy of 86.98%,sensitivity of 91.43%,and specificity of 80.61%;with an area under the curve(AUC) of 0.93 [95% confidence interval(CI) 0.68–0.98].The decision tree model achieved an accuracy of 81.09%,sensitivity of 91.43%,and specificity of 66.33%;with an AUC of 0.89(95% CI 0.66–0.92) in validation ***:The features of tongue images were associated with *** the 2 diagnostic models,which would be convenient,noninvasive,lightweight,rapid,and inexpensive technical references for early screening,can accurately distinguish NAFLD and are worth further study.

关键词： nonalcoholic fatty liver disease noninvasive diagnosis tongue image tongue diagnosis Chinese medicine machine learning

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Digital Twin Technology of Human-Machine Integration in Cross-Belt Sorting System

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Chinese Journal of Mechanical Engineering 2024年第2期37卷 195-212页

作者： Yanbo Qu Ning Zhao Haojue Zhang School of Mechanical Engineering University of Science and Technology BeijingBeijing 100083China Institute of microelectronics of the Chinese Academy of Sciences Beijing 100029China Wayzim Technology Co. LtdWuxi 214108China Business School Beijing Technology and Business UniversityBeijing 100048China

The Chinese express delivery industry processes nearly 110 billion items in 2022,averaging an annual growth rate of 200%.Among the various types of sorting systems used for handling express items,cross-belt sorting systems stand out as the most ***,despite their high degree of automation,the workload for operators has intensified owing to the surging volume of express *** the era of Industry 5.0,it is imperative to adopt new technologies that not only enhance worker welfare but also improve the efficiency of cross-belt *** a balance between efficiency in handling express items and operator well-being is *** twin technology offers a promising solution in this respect.A realization method of a human-machine integrated digital twin is proposed in this study,enabling the interaction of biological human bodies,virtual human bodies,virtual equipment,and logistics equipment in a closed loop,thus setting an operating *** technologies in the proposed framework include a collection of heterogeneous data from multiple sources,construction of the relationship between operator fatigue and operation efficiency based on physiological measurements,virtual model construction,and an online optimization module based on real-time *** feasibility of the proposed method was verified in an express distribution center.

关键词： Industry 5.0 Cross-belt sorting system Human-machine integrated Digital twin Online optimization

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Stable photocurrent-voltage characteristics of perovskite single crystal detectors obtained by pulsed bias

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Chinese Physics B 2024年第4期33卷 209-214页

作者：刘新陈之龙王虎张雯清董昊王鹏祥邵宇川 Laboratory of Thin Film Optics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Materials for High-Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Key Laboratory for Ultrafine Materials of Ministry of Education Shanghai Engineering Research Center of Hierarchical NanomaterialsSchool of Materials Science and EngineeringEast China University of Science and TechnologyShanghai 200237China School of microelectronics Shanghai UniversityShanghai 201899China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China

Photocurrent-voltage characterization is a crucial method for assessing key parameters in x-ray or y-ray semiconductor detectors,especially the carrier mobility lifetime ***,the high biases during photocurrent measurements tend to cause severe ion migration,which can lead to the instability and inaccuracy of the test *** the mixed electronic-ionic charac teristics,it is imperative to devise novel methods capable of precisely measuring photocurrentvoltage characteristics under high bias conditions,free from interference caused by ion *** this paper,pulsed bias is employed to explore the photocurrent-voltage characteristics of MAPbBr_(3) single *** method yields stable photocurrent-voltage characteristics at a pulsed bias of up to 30 V,proving to be effective in mitigating ion *** fitting the modified Hecht equation,we determined the mobility lifetime products of 1.0×10^(2) cm^(2)·V^(-1)for hole and 2.78×10~(-3)cm^(2)·V^(-1)for *** approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.

关键词： perovskites ion migration pulsed bias mobility lifetime product

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Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

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Science China(Physics,Mechanics & Astronomy) 2024年第5期67卷 115-122页

作者： Chunhua Chen Zhenyu Ding Yonghui Zhou Yifang Yuan Nixian Qian Jing Wang Shuyang Wang Ying Zhou Chao An Min Zhang Xuliang Chen Xiaoping Yang Mingliang Tian Zhaorong Yang Anhui Key Laboratory of Low-Energy Quantum Materials and Devices High Magnetic Field LaboratoryHFIPSChinese Academy of SciencesHefei 230031China Science Island Branch of Graduate School University of Science and Technology of ChinaHefei 230026China Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityHefei 230601China Institutes of Physical Science and Information Technology Anhui UniversityZhengzhou 450001China Collaborative Innovation center of Advanced Microstructures Nanjing UniversityNanjing 210093China

van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic ***,we report a pressure-induced crystallineamorphization-recrystallization transition under compression in binary vdW semiconductor *** compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized *** employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized Si P hosts a tetragonal structure(space group I4mm)and further transforms partially into a cubic phase(space group Fm3m).Consistently,electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries—the amorphous,tetragonal,and cubic ***,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during *** findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor *** results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.

关键词： recrystallization transition amorphous

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Modulating p-type doping of two-dimensional material palladium diselenide

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Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming Jinshun Bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of microelectronics of Tianjin Binhai New Area Tianjin 300451China Institute of microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann center of Biomaterials Technische Universität DresdenDresden 01069Germany center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of PdSe_(2) is yet to be *** this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic

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