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Science China(Information Sciences) 2024年第1期67卷 312-313页

作者： Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU Genquan HAN Research center for Intelligent Chips School of microelectronics Xidian University

The steep subthreshold swing (SS) could be achieved in negative capacitance field-effect transistors (NCFET) to reduce power dissipation in modern electronics. Polycrystalline Hf O2-based ferroelectric materials have attracted great interest due to their better thickness scalability and CMOS process compatibility [1].

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

New structure transistors for advanced technology node CMOS ICs

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National Science Review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin Integrated Circuit Advanced Process R&D center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3D stack(3DS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3DS FET

Activation Redistribution Based Hybrid Asymmetric Quantization Method of Neural Networks

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工程与科学中的计算机建模(英文) 2024年第1期138卷 981-1000页

作者： Lu Wei Zhong Ma Chaojie Yang R&D Innovation center Xi’an Microelectronics Technology InstituteXi’an710065China

The demand for adopting neural networks in resource-constrained embedded devices is continuously *** is one of the most promising solutions to reduce computational cost and memory storage on embedded *** order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer ***,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not *** often comes at the cost of lower *** paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural *** proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural *** experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,*** proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing *** will be available on https://***/ycjcy/Hybrid-Asymmetric-Quantization.

关键词： Quantization neural network hybrid asymmetric accuracy

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

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Nano Research 2024年第6期17卷 5614-5620页

作者： Xuemeng Hu Jialin Meng Tianyang Feng Tianyu Wang Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China National Integrated Circuit Innovation center Shanghai 201203China

Traditional computing structures are blocked by the von Neumann bottleneck,and neuromorphic computing devices inspired by the human brain which integrate storage and computation have received more and more ***,a flexible organic device with 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene(C10-DNTT)heterostructural channel having excellent synaptic behaviors was fabricated on muscovite(MICA)substrate,which has a memory window greater than 20 *** device shows better electrical characteristics than organic field effect transistors with single organic semiconductor ***,the device simulates organism synaptic behaviors successfully,such as paired-pulse facilitation(PPF),long-term potentiation/depression(LTP/LTD)process,and transition from short-term memory(STM)to long-term memory(LTM)by optical and electrical ***,the neuromorphic computing function was verified using the Modified National Institute of Standards and Technology(MNIST)pattern recognition,with a recognition rate nearly 100%without *** research proposes a flexible organic heterojunction with the ultra-high recognition rate in MNIST pattern recognition and provides the possibility for future flexible wearable neuromorphic computing devices.

关键词： organic heterojunction neuromorphic computing synapse behaviors optical modulation Modified National Institute of Standards and Technology(MNIST)pattern recognition

Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures

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Chinese Physics Letters 2024年第5期41卷 107-119页

作者：姜新新王智宽李冲孙雪莲杨磊李冬梅崔彬刘德胜 School of Physics National Demonstration Center for Experimental Physics EducationShandong UniversityJinan 250100China School of Physics and microelectronics Zhengzhou UniversityZhengzhou 450001China

Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing ***, we propose a design for two-dimensional van der Waals heterostructures(vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an In Se monolayer and forming an InSe/In_(2)Se_(3) vd WH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states(P_↑ and P_↓)of hole-doped In_(2)Se_(3) with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures,showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.

关键词： polarization ferroelectric doping

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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

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Science China(Information Sciences) 2024年第6期67卷 463-464页

作者： Fan ZHANG Zhaohao ZHANG Jiaxin YAO Qingzhu ZHANG Gaobo XU Zhenhua WU Huan LIU Genquan HAN Yan LIU Huaxiang YIN Integrated Circuit Advanced Process R&D center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of microelectronics Xidian University School of Integrated Circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating *** capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process *** （FE） HfO2-based materials,

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A flexible ultra-broadband multi-layered absorber working at 2 GHz-40 GHz printed by resistive ink

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Chinese Physics B 2024年第2期33卷 329-333页

作者：汪涛闫玉伦陈巩华李迎胡俊毛剑波 School of microelectronics Hefei University of TechnologyHefei 230601China Special Display and Imaging Technology Innovation center of Anhui Province Academy of Photoelectric TechnologyHefei University of TechnologyHefei 230027China

A flexible extra broadband metamaterial absorber(MMA)stacked with five layers working at 2 GHz–40 GHz is *** layer is composed of polyvinyl chloride(PVC),polyimide(PI),and a frequency selective surface(FSS),which is printed on PI using conductive *** investigate this absorber,both one-dimensional analogous circuit analysis and three-dimensional full-wave simulation based on a physical model are *** crucial electromagnetic properties,such as absorption,effective impedance,complex permittivity and permeability,electric current distribution and magnetic field distribution at resonant peak points,are studied in *** shows that the working frequency of this absorber covers entire S,C,X,Ku,K and Ka bands with a minimum thickness of 0.098λ_(max)(λ_(max) is the maximum wavelength in the absorption band),and the fractional bandwidth(FBW)reaches 181.1%.Moreover,the reflection coefficient is less than-10 dB at 1.998 GHz–40.056 GHz at normal incidence,and the absorptivity of the plane wave is greater than 80%when the incident angle is smaller than 50°.Furthermore,the proposed absorber is experimentally validated,and the experimental results show good agreement with the simulation results,which demonstrates the potential applicability of this absorber at 2 GHz–40 GHz.

关键词： extra broadband physical model flexible metamaterial absorber multi-layer frequency selective surface

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Controllable Synthesis of Au NRs and Its Flexible SERS Optical Fiber Probe with High Sensitivity

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Journal of Wuhan University of Technology(Materials Science) 2024年第1期39卷 7-16页

作者：熊文豪 WANG Wenbo LONG Yuting 李宏 State Key Laboratory of Silicate Materials for Architectures Wuhan University of TechnologyWuhan 430070China National 111 Research center microelectronics and Integrated Circuits School of ScienceHubei University of TechnologyWuhan 430068China

The surface-enhanced Raman scattering(SERS) optical fiber probes were successfully prepared by self-assembling on polyelectrolyte multilayers. Gold nanorods(Au NRs) were used as SERS enhancement material to give excellent biological affinity and stability to the SERS optical fiber probes. Au NRs were synthesized by seed growth method. The synergistic effect between AgNO_(3) and surfactant was investigated, and the highest yield was found when AgNO_(3) was 500 uL. Meanwhile, different SERS optical fiber probes were obtained by selecting silane coupling agent, polyelectrolyte multilayer and graphene oxide(GO) to treat quartz fiber. It was found that the SERS optical fiber probes obtained by the self-assembled on polyelectrolyte multilayers method performed better than those by other methods. In addition, Mapping was combined with finite element simulation to analyze the electromagnetic field distribution at the fiber end *** electromagnetic field distribution of Au NRs was investigated, the difference of electromagnetic field intensity around the Au NRs with different arrangements was compared, the strongest signal was obtained when the Au NRs were head-to-head. Finally, sensitivity of the optimized SERS optical fiber probes could reach 10^(-9)mol/L, with excellent stability and repeatability.

关键词： surface-enhanced Raman scattering(SERS) optical fiber probe gold nanorods(Au NRs) polyelectrolyte multilayers controllable synthesis

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Emerging materials and transistors for integrated circuits

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National Science Review 2024年第3期11卷 7-8页

作者： Ming Liu Lian-Mao Peng Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Key Laboratory for the Physics and Chemistry of Nanodevices and center for Carbon-based Electronics School of Electronics Peking University

The device technology for integrated circuits(ICs) has received a great deal of attention in the past decade since the mainstream silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistor(FET) for modern ICs had been encountering development bottlenecks due to the combination of power constraints, physics, cost and fabrication processes.

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