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Involvement of insulin receptor substrates in cognitive impairment and Alzheimer’s disease

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Neural Regeneration Research 2019年第8期14卷 1330-1334页

作者： Daisuke Tanokashira Wataru Fukuokaya Akiko Taguchi Department of Integrative Aging Neuroscience National Center for Geriatrics and Gerontology Obu Aichi Japan division of Neurology Endocrinology and Metabolism Faculty of Medicine University of Miyazaki Miyazaki Japan

Type 2 diabetes一associated with impaired insulin/insulin-like growth factor-1 (IGF1) signaling (IIS)一is a risk factor for cognitive impairment and dementia including Alzheimer's disease (AD). The insulin receptor substrate (IRS) proteins are major components of IIS, which transmit upstream signals via the insulin receptor and/or IGF1 receptor to multiple intracellular signaling pathways, including AKT/protein kinase B and extracellular-signal-regulated kinase cascades. Of the four IRS proteins in mammals, IRS1 and IRS2 play key roles in regulating growth and survival, metabolism, and aging. Meanwhile, the roles of IRS1 and IRS2 in the central nervous system with respect to cognitive abilities remain to be clarified. In contrast to IRS2 in peripheral tissues, inactivation of neural IRS2 exerts beneficial effects, resulting in the reduction of amyloid p accumulation and premature mortality in AD mouse models. On the other hand, the increased phosphorylation of IRS 1 at several serine sites is observed in the brains from patients with AD and animal models of AD or cognitive impairment induced by type 2 diabetes. However, these serine sites are also activated in a mouse model of type 2 diabetes, in which the diabetes drug metformin improves memory impairment. Because IRS1 and IRS2 signaling pathways are regulated through complex mechanisms including positive and negative feedback loops, whether the elevated phosphorylation of IRS1 at specific serine sites found in AD brains is a primary response to cognitive dysfunction remains unknown. Here, we examine the associations between IRS 1 /1 RS2-mediated signaling in the central nervous system and cognitive decline.

关键词： type 2 diabetes insulin/insulin^like growth factor-1 insulin receptor substrate Alzheimer's disease aging serine phosphorylation metformin neuroprotective effects high-fat-diet

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Printed thin film transistors with 10^(8)on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched(9,8)carbon nanotubes

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Nano Research 2022年第6期15卷 5517-5526页

作者： Wenjing Xu Min Li Masayoshi Tange Liqiang Li Juncai Hou Jun Ye Li Wei Yuan Chen Jianwen Zhao School of Materials Science and Engineering Shaanxi University of TechnologyHanzhong 723001China division of Nanodevices and Related Nanomaterials Printable Electronics Research CentreSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China National and Local Joint Engineering Laboratory for Slag Comprehensive Utilization and Environmental Technology Shaanxi University of TechnologyHanzhong 723001China Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology(AIST)Tsukuba 3058565Japan Advanced Materials division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNo.398 Ruoshui RoadSEIDSuzhou Industrial ParkSuzhou 215123China Institute of High Performance Computing Agency for ScienceTechnology and ResearchSingapore 138632Singapore School of Chemical and Biomolecular Engineering The University of SydneyCamperdownNSW 2006Australia

Monochiral single-walled carbon nanotubes(SWCNTs)can enable high-performance carbon-based electronic devices and integrated ***,their fabrication often requires complex SWCNT purification and ***,we showed that isoindigo-based polymer derivatives(PDPPIID and PFIID)directly enriched(9,8)nanotubes from as-synthesized SWCNT powders selectively and efficiently to yield high concentration(9,8)nanotube *** selective wrapping mechanism was elucidated by classical full-atomistic molecular dynamic(MD)***-film transistors(TFTs)were fabricated by depositing the SWCNT ink into device channels using aerosol jet *** performance was strongly influenced by polymer residues,the deposition condition(humidity),and ink *** TFTs showed excellent device-to-device uniformity with 108 on/off ***,optoelectronic transistors were fabricated,and their photoelectrical neuromorphic characteristics,storage,memory,and logic functions were characterized under the pulsed light and voltage stimulations,demonstrating excellent application potentials.

关键词： monochiral carbon nanotube polymer wrapping printed thin-film transistor photoelectrical synergistic molecular dynamic simulation

Tissue-resident memory-like ILCs: innate counterparts of TRM cells

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Protein & Cell 2020年第2期11卷 85-96页

作者： Xianwei Wang Zhigang Tian Hui Peng The First Affiliated Hospital of USTC Division of Life Sciences and MedicineUniversity of Science and Technology of ChinaHefei 230001China division of Molecular Medicine Hefei National Laboratory for Physical Sciences at MicroscaleThe CAS Key Laboratory of Innate Immunity and Chronic DiseaseSchool of Life SciencesUniversity of Science and Technology of ChinaHefei 230027China Institue of Immunology University of Science and Technology of ChinaHefei 230027China

Innate lymphoid cells(ILCs)are defined as lymphocytes that lack RAG recombinase and do not express diverse antigen receptors;however,recent studies have revealed the adaptive features of *** cytomegalovirus(MCMV)-and cytokine-induced memory natural killer(NK)cells circulate in the blood and are referred to as conventional memory NK *** contrast,virusand hapten-induced memory NK cells,hapten-induced memory ILC1s,and cytokine-induced memory-like ILC2s exhibit long-term residency in the liver or lung,and are referred to as tissue-resident memory *** their similar migration patterns and memory potential,tissue-resident memory ILCs could be regarded as innate counterparts of resident memory T(T r m)*** tissue-resident memory ILCs and TRM cells share common characteristics in terms of dynamics,phenotype,and molecular *** emergence of ILC memory expands the basic biology of ILCs and prompts us to re-examine their functions in disease *** review discusses the evidence supporting tissue-resident memory NK cells and other memory ILC subsets,compares them with TRM cells,and highlights key unsolved questions in this emerging field.

关键词： tissue-residency innate lymphoid cells immunological memory TRM cells

Toward neglligible memories based heterostructures charge loss in on vertically charge injection integrated 2D

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Nano Research 2016年第8期9卷 2319-2326页

作者： Dongri Qiu Dong Uk Lee Kyoung Su Lee Sang Woo Pak Eun Kyu Kim Quantum-Function Research Laboratory and Department of Physics Hanyang University Seou104763 Republic of Korea NAND Development division NAND Product Engineering Group SK Hynix Icheon 17336 Republic of Korea

Two-dimensional （2D） crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals （vdW） heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride （hBN） and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio （〉103） between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.

关键词： two-dimensional (2D)material graphene hexagonal boron nitride(hBN) tungsten disulphide (WS)2 heterostructure

Large optical nonlinearity enabled by coupled metallic quantum wells

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Light(Science & Applications) 2019年第1期8卷 1069-1075页

作者： Haoliang Qian Shilong Li Ching-Fu Chen Su-Wen Hsu Steven Edward Bopp Qian Ma Andrea R.Tao Zhaowei Liu Department of Electrical and Computer Engineering University of CaliforniaSan Diego9500 Gilman DriveLa JollaCA 92093USA Department of NanoEngineering University of CaliforniaSan Diego9500 Gilman DriveLa JollaCA 92093USA Materials Science and Engineering University of CaliforniaSan Diego9500 Gilman DriveLa JollaCA 92093USA Center for memory and Recording Research University of CaliforniaSan Diego9500 Gilman DriveLa JollaCA 92093USA

New materials that exhibit strong second-order optical nonlinearities at a desired operational frequency are of paramount importance for nonlinear *** second-order susceptibility χ^((2)) has been obtained in semiconductor quantum wells(QWs).Unfortunately,the limited confining potential in semiconductor QWs causes formidable challenges in scaling such a scheme to the visible/near-infrared(NIR)frequencies for more vital nonlinear-optic ***,we introduce a metal/dielectric heterostructured platform,i.e.,TiN/Al_(2)O_(3) epitaxial multilayers,to overcome that *** platform has an extremely high χ^((2)) of approximately 1500 pm/V at NIR *** combining the aforementioned heterostructure with the large electric field enhancement afforded by a nanostructured metasurface,the power efficiency of second harmonic generation(SHG)achieved 10^(−4) at an incident pulse intensity of 10 GW/cm^(2),which is an improvement of several orders of magnitude compared to that of previous demonstrations from nonlinear surfaces at similar *** proposed quantum-engineered heterostructures enable efficient wave mixing at visible/NIR frequencies into ultracompact nonlinear optical devices.

关键词： quantum nonlinear visible

High-Velocity Impact Studies on Scaled Leading Edges of Horizontal Tail with Smart Composite Layers

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Advances in Aerospace Science and Technology 2022年第1期7卷 32-51页

作者： Basavanna Rangaiah Dhayanidhi Jeevarathinam Raja Samikkannu Karisiddappa Department of Civil Engineering Visvesvaraya Technological University Belagavi India Structural Technological division CSIR-National Aerospace Laboratories Bangalore India Visvesvaraya Technological University Belagavi India

Bird strike studies on typical aluminium leading edges of the Horizontal Tail (HT) with and without Glass Fibre Shape memory Polymer (GF-SMP) layers are carried out. A one-fifth scaled model of HT is designed and fabricated. The parameters like bird dimension and energy requirements are accordingly scaled to conduct the bird strike tests. Two leading-edge components have been prepared, namely one with AL 2024-T3 aluminium alloy and the other specimen of the same dimension and material, additionally having GF-SMP composite layers inside the metallic leading edge, in order to enhance its impact resistance. Bird strike experiments are performed on both the specimens, impacting at the centre of the leading edge in the nose tip region with an impact velocity of 115 m/s. The test component is instrumented with linear post-yield strain gauges on the top side and the PZT sensors on the bottom. Furthermore, the impact scenario is monitored using a high-speed camera at 7000 fps. The bird strike event is simulated by an equation of state model, in which the mass of the bird is idealized using smooth particle hydrodynamics element in PAMCRASH? explicit solver. The strain magnitude and its pattern including time duration are found to be in a good correlation between test and simulation. Key metrics are evaluated to devise an SHM scheme for the load and impact event monitoring using strain gauges and PZT sensors. GF-SMP layers have improved the impact resistance of the aluminium leading edge which is certainly encouraging towards finding a novel solution for the high-velocity impact.

关键词： Glass Fibre Shape memory Polymer (GF-SMP) Scaled Model High-Velocity Impact Leading Edge (LE) Piezoelectric Sensor (PZT)

Phase transformation behaviors and mechanical properties of Ti_(50)Ni_(49)Fe_1 alloy with severe plastic deformation

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Rare Metals 2013年第5期32卷 448-452页

作者： Wen Ma Bin Chen Fu-Shun Liu Qing Xu division of Science and Technology Information General Research Institute for Nonferrous Metals School of Material Science and Engineering Beijing University of Aeronautics and Astronautics Metrology and Phsico-Chemical Institute Capital Aerospace Machinery Company

In this work, transformation behaviors and mechanical properties of cold-rolled shape memory alloy TisoNia9Fel by severe plastic deformation （SPD） were intensively investigated. The phase transformation behaviors, phase analysis, and microstructures were characterized by differential scanning calorimetry （DSC）, X-ray diffraction （XRD）, and transmission electron microscopy （TEM）, respectively. Tensile testing was performed to analyze the effect of SPD on the mechanical properties and shape memory of TisoNi49Fel alloy. When the thickness reduction is beyond 30 %, the martensitic transformation is suppressed. After cold-rolling, the alloy is mainly com- posed of B2 parent phases with some stress-induced martensitic B 19t phases, and high density of dislocations are generated and the grains are obviously refined. The yield stress ab significantly raises from 618 MPa of 0 % cold rolling to 1,338 MPa of 50 % SPD. Shape-memory effect increases from 6.5 % without cold rolling to 8.5 % after 30 % SPD, ascribed to the induced defects in cold rolling. Those results indicate that TisoNi49Fel alloy has improved mechanical properties and potential commercial applications after SPD.

关键词： TiNiFe alloy Cold-rolling Severe plasticdeformation (SPD) Shape memory effect

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Effectiveness of lorazepam-assisted interviews in an adolescent with dissociative amnesia A case report

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Neural Regeneration Research 2013年第2期8卷 186-190页

作者： Yuna Seo Mi-Hee Shin Sung-Gon Kim Ji-Hoon Kim Department of Psychiatry Aram Hospital Department of Psychiatry Pusan National University School of Medicine division of Child-Adolescent Psychiatry Department of Psychiatry Pusan National University School of Medicine

To facilitate gathering information during a psychiatric interview, some psychiatrists advocate augmenting the interview using drugs. Rather than barbiturates, benzodiazepines have been used for drug-assisted interviews. Dissociative amnesia is one of the indications for these interviews. Herein, we present the case of a 15-year-old female who was diagnosed as having dissociative amnesia because of conflicts with her friends. She was administered a Iorazepam-assisted interview to aid recovery of her memories. In this case, a small dose of Iorazepam was sufficient to recover her memories without any adverse effects.

关键词： neural regeneration clinical practice dissociative amnesia dissociative disorder dissociation drug-assisted interview amobarbital, Iorazepam benzodiazepine adolescent memory loss emotional distress distress grant-supported paper neuroregeneration

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Resistance switching for RRAM applications

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Science China(Information Sciences) 2011年第5期54卷 1073-1086页

作者： CHEN Frederick T. LEE HengYuan HSU YenYa CHEN PangShiu LIU WenHsing TSAI ChenHan SHEU ShyhShyuan TSAI MingJinn Nanoelectronic Technology division Electronics and Optoelectronics Research Laboratories Industrial Technology Research Institute (ITRI) Department of Chemical and Materials Engineering Ming Shin University of Science and Technology

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

关键词： random access memory storage oxide breakdown oxygen vacancies