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Chinese Physics Letters 1990年第11期7卷 522-525页

作者： TENG Da ZHUANG Weihua laboratory of superlattice and microstructure Institute of SemiconductorsAcademia SinicaBeijing 100083

A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs *** InP layer is under biaxial compressive strain at temperatures below the growth temperaiure,because the thermal expansion coefficient of InP is smaller than that of GaAs,The strain value determined by the energy shift of the bandedge peak is in good agreement with the calculated thermal strain.A band to carbon acceptor recombination is also identified.

关键词： tempera thermal strained

First Principle Self-Consistent Pseudopotential Calculation on the Electronic Structure of (InAs)_(1)(GaAs)_(1) superlattice

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Chinese Physics Letters 1992年第6期9卷 305-308页

作者： FAN Weijun GU Zongquan XIA Jianbai National laboratory for superlattice and microstructure Academia SinicaBeijing 100083 Institute of Semiconductors Academia SinicaBeijing 100083

The band structure of the(InAs)i(GaAs)i strained superlattice is calculated by the self-consistent pseudopotential *** results show that the(InAs)_(1)(GaAs)_(1) is a direct-gap *** the local density approximation,the band gap calculated with the room-temperature lattice constants is 0.43eV,and the corrected value is 0.91 eV,in agreement with experimental *** of the lattice mismatch between InAs and GaAs layers,the three-fold degenerate energy level at the top of valence band splits into two levels with a spacing of 0.29 *** splitting of energy level is also estimated and explained using the effective-mass theory.

关键词： lattice potential spacing

Vertical Transport in GaAs/AlAs superlattice with Weak Coupling Between Wells

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Chinese Physics Letters 1998年第4期15卷 293-295页

作者： HE Li-xiong SUN Bao-quan WU Jian-qing National laboratory for Semiconductor superlattice and microstructures Beijing 100083 Department of Electronic Science and Applied Physics Fuzhou UniversityFuzhou 350002

Vertical transport I-V relations of type-I GaAs/A1As superlattices with doped wells and weak coupling between wells at 77K were investigated with quasistatic and dynamic *** current oscillations are also *** domain formation time 70±30 ns is directly *** using discrete-tunneling model,the key parameters of the relation between tunneling current and the bias between adjacent wells were quantitatively determined from the experimental data.

关键词： Vertical tunneling Coupling

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

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Chinese Physics B 2014年第10期23卷 383-387页

作者：黄呈橙张霞许福军许正昱陈广杨志坚唐宁王新强沈波 State Key laboratory of Artificial microstructure and Mesoscopic Physics School of Physics Peking University Collaborative Innovation Center of Quantum Matter

Epitaxial evolution of buried cracks in a strain-controlled AIN/GaN superlattice interlayer （IL） grown on GaN tem- plate, resulting in crack-free AIGaN/GaN multiple quantum wells （MQW）, was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.

关键词： AIGaN/GaN multiple quantum wells epitaxial evolution

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

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Chinese Physics Letters 2007年第12期24卷 3543-3546页

作者：吴兵鹏吴东海倪海桥黄社松詹峰熊永华徐应强牛智川 State Key laboratory for superlattice and microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

关键词： thermoelectric half-Heusler compounds thermal conductivity

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

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Journal of Semiconductors 2011年第10期32卷 22-25页

作者：张宇王国伟汤宝徐应强徐云宋国锋 Nano-Optoelectronics laboratory Institute of SemiconductorsChinese Academy of Sciences National laboratory for superlattice and microstructures Institute of SemiconductorsChinese Academy of Sciences

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 *** optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 ***-doped GaSb buffer layers were optimized by Hall *** optimal doping concentration is 1.127×10^（18） cm^（-3） and the resistivity is 5.295×10^（-3）Ω·cm.

关键词： InGaSb AlGaAsSb strained quantum wells Te doped

Physical description of the monoclinic phase of zirconia based on the bond-order characteristic of the Tersoff potential

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Frontiers of physics 2021年第3期16卷 111-123页

作者： Run-Sen Zhang Ji-Dong He Bing-Shen Wang Jin-Wu Jiang Shanghai Key laboratory of Mechanics in Energy Engineering Shanghai Institute of Applied Mathematics and MechanicsSchool of Mechanics and Engineering ScienceShanghai UniversityShanghai200072China State Key laboratory of Semiconductor superlattice and microstructure and Institute of Semiconductor Chinese Academy of SciencesBeijing100083China

Zirconia has many important phases with Zr coordination varying from six-fold in the orthorhombic phase to eight-fold in the cubic and tetragonal *** of empirical potentials to describe these zirconia phases is an important but long-standing challenge,and it is a bottleneck for theoretical investigation of large zirconia ***,instead of using the standard core—shell model,we developed a new potential for zirconia by combining the long-range Coulomb interaction and bond-order Tersoff *** bond-order characteristic of the Tersoff potential enables it to be well suited to describe the zirconia phases with different coordination *** particular,the complex monoclinic phase with two inequivalent oxygen atoms,which is difficult to describe with most existing empirical potentials,is well described by this newly developed *** potential provides reasonable predictions of most of the static and dynamic properties of various zirconia *** its clear physical essence,this potential is at least one order of magnitude faster than core—shell based potentials in molecular dynamics *** is because it does not include an ultralight shell that requires an extremely small time *** also provide potential scripts for the widely used simulation packages GULP and LAMMPS.

关键词： zirconia ZrO_(2) empirical potential molecular dynamics simulation

Improvement of doping efficiency in Mg-Al_(0.14)Ga_(0.86)N/GaN superlattices with AlN interlayer by suppressing donor-like defects

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Chinese Physics B 2012年第11期21卷 402-407页

作者：刘宁炀刘磊王磊杨薇李丁李磊曹文彧鲁辞莽万成昊陈伟华胡晓东 State Key laboratory for Artificial microstructure and Mesoscopic Physics School of PhysicsPeking University

We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1 × 1017 to 9.3×1017 cm-3, when an AlN interlayer is inserted to modulate the strains. SchrSdinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrumlfor SLs with an A1N interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.

关键词： superlattice doping efficiency strain modulation nitrogen vacancy

Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing

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Chinese Physics Letters 2006年第9期23卷 2579-2582页

作者：赵欢徐应强倪海桥韩勤吴荣汉牛智川 State Key laboratory for superlattice and microstructures Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.

关键词： MOLECULAR-BEAM EPITAXY IMPROVED LUMINESCENCE EFFICIENCY ORIGIN

Design and Fabrication of 1.06μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

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Chinese Physics Letters 2006年第12期23卷 3376-3379页

作者：杨晓红韩勤倪海桥黄社松杜云彭红玲熊永华牛智川吴荣汉 State Key laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 State Key laboratory for superlattice and microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.

关键词： Resonant-Cavity Enhanced Reflective Modulator GaInAs/GaAs Quantum Wells