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Journal of semiconductors 2011年第8期32卷 33-39页

作者：陈斌杨银堂柴常春宋坤马振洋 Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University

A two-dimensional model of a 4H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector has been established using a self-consistent numerical calculation *** structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson＇s equation,the current continuity equation and the current density *** calculated results are verified with experimental *** consideration of the reflection and absorption on the metal contacts,a detailed study involving various electrode heights（H）,spacings （S） and widths（W） reveals conclusive results in device *** mechanisms responsible for variations of responsivity with those parameters are *** findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and *** addition,the ultraviolet （UV）-to-visible rejection ratio is *** optimizing the device structure at 10 V bias,a responsivity as high as 180.056 mA/W,a comparable quantum efficiency of 77.93%and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H = 50 nm,S =9μm and W = 3μm.

关键词： MSM structure ultraviolet photodetector spectral response

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal-oxide-semiconductor field-effect transistors

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Chinese Physics B 2009年第1期18卷 309-314页

作者：曹艳荣郝跃马晓华胡仕刚 School of Microelectronics Xidian University Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices

The effect of substrate bias on the degradation during applying a negative bias temperature （NBT） stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability （NBTI） is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electro,hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.

关键词： negative bias temperature instability (NBTI) substrate bias hot holes oxide traps

Performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors

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Chinese Physics B 2012年第6期21卷 476-481页

作者：冯倩李倩邢韬王强张进成郝跃 School of Microelectronics Xidian University Key laboratory of Wide Band-Gap semiconductor Materials and Devices Xidian University

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of *** with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.

关键词： indium aluminum nitride metal-oxide-semiconductor high electron mobility transistor lanthanum oxide

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor

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Chinese Physics B 2012年第9期21卷 455-459页

作者：张现军杨银堂段宝兴柴常春宋坤陈斌 Key laboratory of Wide Band-Gap semiconductor Materials and Devices of the Ministry of Education School of MicroelectronicsXidian University

Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.

关键词： silicon carbide metal-semiconductor contact dual material gate

Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

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Journal of semiconductors 2010年第6期31卷 65-69页

作者：陈斌杨银堂李跃进刘红霞 Key laboratory of the Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of Microelectronics Xidian University

Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal（MSM） ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width（W） and 3μm electrode spacing（L） is *** findings show that the MSM photodetector has quite a low dark current of 15 pA at 10V bias and the photocurrent is two orders of magnitude higher than the dark *** influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device *** results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5.3 nA and 327 with device parameters of W=6μm,L=3μm and W =3μm,L=6μm,respectively.

关键词： MSM structure ultraviolet photodetector Schottky contact I-V characteristics

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

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Chinese Physics B 2012年第3期21卷 395-399页

作者：张现军杨银堂段宝兴柴常春宋坤陈斌 Key laboratory of Wide Band Gap semiconductor Materials and Devices of the Ministry of Education School of MicroelectronicsXidian University

A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytical model,we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET,which characterize the DIBL *** results show that they are significantly dependent on the drain bias,gate length as well as the thickness and doping concentration of the two channel *** on this analytical model,the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.

关键词： drain-induced barrier lowering effect Poisson’s equation metal semiconductor field effect transistor

Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO_2 films in p-GaAs metal–oxide–semiconductor capacitors

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Journal of semiconductors 2015年第12期36卷 87-90页

作者：刘琛张玉明张义门吕红亮芦宾 School of Microelectronics and Key laboratory of Wide Band-Gap semiconductor Materials and Devices Xidian University

We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition （ALD） and annealing of HfO2 using the tetrakis （ethylmethyl） amino hafnium precursor. The leakage current decreases with the increase of the ALD tem- perature and the lowest current is obtained at 300 ℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing （PDA） at 500 ℃ after ALD at 300 ℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500 ℃ has been observed using X-ray pho- toelectron spectroscopy at the interface resulting in a proportional increase in Ga203. The increment of Ga203 after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.

关键词： GaAs metal-oxide-semiconductor capacitor temperature interface leakage current

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors

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Chinese Physics B 2012年第1期21卷 426-432页

作者： Song Kun Chai Chang-Chun Yang Yin-Tang Chen Bin Zhang Xian-Jun Ma Zhen-Yang Key laboratory of Wide Band-Gap semiconductor Materials and Devices of Ministry of Education School of MicroelectronicsXidian UniversityXi'an 710071China

An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.

关键词： silicon carbide metal-semiconductor field-effect transistor p-type spacer gate-buffer

Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC metal-semiconductor-metal Ultraviolet Photodetector

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Chinese Physics Letters 2011年第6期28卷 329-332页

作者： CHEN Bin YANG Yin-Tang CHAI Chang-Chun ZHANG Xian-Jun Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071

A model of novel triangular electrode metal-semiconductor-metal(TEMSM)and conventional electrode metal-semiconductor-metal(CEMSM)detectors is established by utilizing the ISE-TCAD *** comparing the simulated results of TEMSM and CEMSM with experimental data,the model validity is verified and the TEMSM detector shows a superiority of a 113%photocurrent increase of 25.4 nA and similar low dark current of 3.16 pA at 30 V bias over the CEMSM ***,the electrode angleα,width W and spacing S are optimized to obtain the enhanced device features including high UV−to-visible rejection ratio and large responsivity,*** 30 V bias,the maximum UV-to-visible rejection ratio,comparable responsivity and external quantum efficiency at 310 nm are 13049,0.1712 A/W and 68.48%for a TEMSM detector with device parameters ofα=60°,W=3μm and S=4μm,respectively.

关键词： electrode visible utilizing

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

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Chinese Physics B 2017年第2期26卷 492-498页

作者： Yu-Hang Zhang Chang-Chun Chai Xin-Hai Yu Yin-Tang Yang Yang Liu Qing-Yang Fan Chun-Lei Shi Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of Microelectronics Xidian Universitv. Xi＇an 710071 China

The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is ***, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

关键词： high-power microwave latch-up repetitive pulse frequency supply voltage dependence