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Wafer-scale MOCVD growth of monolayer M0S2 on sapphire and SiO2

Nano Research 2019年第10期12卷 2646-2652页

作者： Huanyao Cun Michal Macha HoKwon Kim Ke Liu Yanfei Zhao Thomas LaGrange Andras Kis Aleksa ndra Radeno vic laboratory of nanoscale Biology Institute of BioengineeringEcole Polytechnique Federate de Lausanne(EPFL)1015 LausanneSwitzerland nanoscale electronics and structures Electrical Engineering InstituteEcole Poly technique Federate de Lausanne(EPFL)1015 LausanneSwitzerland nanoscale electronics and structures Institute of Materials Science and EngineeringEcole Poly technique Federate de Lausanne(EPFL)1015 LausanneSwitzerland Interdisciplinary Center for Electron Microscopy(CIME) Ecole Polytechnique Federale de Lausanne(EPFL)1015 LausanneSwitzerland

High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic ***,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)*** to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the *** grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire *** sapphire substrates are reusable for subsequent *** same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.

关键词： molybdenum disulfide two-dimensional(2D)materials metal-organic chemical vapor deposition(MOCVD) wafer-scale fabrication

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Effects of Shannon entropy and electric field on polaron in RbCl triangular quantum dot

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Chinese Physics B 2016年第4期25卷 432-435页

作者： M Tiotsop A J Fotue S C Kenfack N Issofa H Fotsin L C Fai Mesoscopic and Multilayers structures laboratory Department of Physics Faculty of Science University of Dschang laboratory of electronics and Signal Processing Department of Physics Faculty of Science University of Dschang

In this paper, the time evolution of the quantum mechanical state of a polaron is examined using the Pekar type variational method on the condition of the electric-LO-phonon strong-coupling and polar angle in RbC1 triangular quantum dot. We obtain the eigenenergies, and the eigenfunctions of the ground state, and the first excited state respectively. This system in a quantum dot can be treated as a two-level quantum system qubit and the numerical calculations are performed. The effects of Shannon entropy and electric field on the polaron in the RbC1 triangular quantum dot are also studied.

关键词： Shannon entropy polaron electric field triangular quantum dot

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Effect of strain on geometric and electronic structures of graphene on a Ru(0001) surface

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Chinese Physics B 2009年第7期18卷 3008-3013页

作者：孙家涛杜世萱肖文德胡昊张余洋李果高鸿钧 nanoscale Physics and Devices laboratory Institute of PhysicsChinese Academy of Sciences

The atomic and electronic structures of a graphene monolayer on a Ru（0001） surface under compressive strain are investigated by using first-principles *** models of graphene monolayers with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru（0001） substrate *** the strain induced by the lattice mismatch,we optimize the atomic structures and investigate the electronic properties of the *** calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N × N superlattice and the *** strain does not induce significant changes in electronic ***,the results calculated in the local density approximation （LDA） are compared with those obtained in the generalized gradient approximation （GGA）,showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation.

关键词： first-principles calculations graphene strain electronic structure

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Energy levels of magneto-optical polaron in spherical quantum dot—Part 1:Strong coupling

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Journal of Semiconductors 2015年第9期36卷 1-8页

作者： A.J.Fotue S.C.Kenfack N.Issofa M.Tiotsop H.Fotsin E.Mainimo L.C.Fai Mesoscopic and Multilayers structures laboratory Department of PhysicsFaculty of ScienceUniversity of Dschang laboratory of electronics and Signal Processing Department of PhysicsFaculty of ScienceUniversity of Dschang

We investigate the influence of a magnetic field on the ground state energy of a polaron in a spherical semiconductor quantum dot （QD） using the modified LLP method. The ground state energy is split into sub-energy levels and there is a degeneracy of energy levels. It is also observed that the degenerate energy increase with the electron-phonon coupling constant and decrease with the magnetic field. The numerical results show that, under the influence of magnetic field and the interaction with the total momentum along the z-direction, the split energy increases and decreases with the longitudinal and the transverse confinement length, respectively.

关键词： magnetic field total momentum modified LLP polaron energy quantum dot

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Transport properties of boron nanotubes investigated by ab initio calculation

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Chinese Physics B 2009年第6期18卷 2502-2507页

作者：郭伟胡亦斌张余洋杜世萱高鸿钧 nanoscale Physics and Devices laboratory Institute of PhysicsChinese Academy of Sciences

We investigate atomic and electronic structures of boron nanotubes （BNTs） by using the density functional theory （DFT）. The transport properties of BNTs with different diameters and chiralities are studied by the Keldysh nonequilibrium Green function （NEGF） method. It is found that the cohesive energies and conductances of BNTs decrease as their diameters decrease. It is more difficult to form （N, 0） tubes than （M, M） tubes when the diameters of the two kinds of tubes are comparable. However, the （N, 0） tubes have a higher conductance than the （M, M） tubes. When the BNTs are connected to gold electrodes, the coupling between the BNTs and the electrodes will affect the transport properties of tubes significantly.

关键词： nonequilibrium Green function transport properties boron nanotubes

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Role of buffer layer in electronic structures of iron phthalocyanine molecules on Au(111)

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Chinese Physics B 2010年第9期19卷 25-30页

作者：孙家涛潘理达胡昊杜世萱高鸿钧 nanoscale Physics and Devices laboratory Institute of PhysicsChinese Academy of Sciences

We investigate the electronic structures of one and two monolayer iron phthalocyanine （FePc） molecules on Au（111） surfaces. The first monolayer FePc is lying flat on the Au（111） substrate, and the second monolayer FePc is tilted at -15° relative to the substrate plane along the nearest neighbour [101] direction with a lobe downward to the central hole of the unit cell in the first layer. The structural information obtained by first-principles calculations is in agreement with the experiment results. Furthermore, it is demonstrated that the electronic structures of FePc molecules in one-monolayer FePc/Au（111） system are perturbed significantly, while the electronic structures of FePc molecules in the second monolayer in two-monolayer FePc/Au（111） system remain almost unchanged due to the screening of the buffer layer on Au（111）.

关键词： iron phthalocyanine electronic structure calculations buffer layer

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Photoluminescence and Electroluminescence from Plasma Ploymerized Naphthalene Films

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Chinese Physics Letters 1996年第10期13卷 794-796页

作者： ZHANG Hai-feng MA Yu-guang TIAN Wen-jing SHEN Jia-cong TANG Jian-guo LIU Shi-yong Key laboratory of Molecular Spectra and structures Jilin UniversityChangchun 130023 National Labaratory of Integrated Optical electronics Jilin UniversityChangchun 130023

A polymer thin film electroluminescence (EL) device has been prepared by using plasma polymerization technique. Its basic structure consists of an emitting layer of plasma polymerized naphthalene (PPN) which is sandwiched between two metal electrodes. A uniform blue emission is observed under 8-20 V. Some electrical and optical properties of the device are described. The possible explanations for the blue EL from PPN are discussed.

关键词： technique. sandwich polymerization

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Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage

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Chinese Physics B 2008年第12期17卷 4580-4584页

作者：秦志辉时东霞高鸿钧 nanoscale Physics & devices laboratory Institute of Physics Chinese Academy of Sciences

Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between （2×1） and c（4×2） structures on Ge（001） surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ce islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the nacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.

关键词： scanning tunnelling microscopy surface structures Ge structural transition

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STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures

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Chinese Physics B 2008年第3期17卷 1055-1059页

作者：秦志辉时东霞庞世瑾高鸿钧 nanoscale Physics and Devices laboratory Institute of PhysicsChinese Academy of Sciences

Different In/Ge（001） nanostructures have been obtained by annealing the samples at 320℃ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge（001） nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{103}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.

关键词： scanning tunnelling microscopy surface structures Ge In

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Resistive switching properties of SnO_(2)nanowires fabricated by chemical vapor deposition

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Chinese Physics B 2023年第9期32卷 443-448页

作者：陈亚琦唐政华蒋纯志徐徳高 School of Physics Electronics and Electrical EngineeringXiangnan UniversityChenzhou 423000China Key laboratory of Low Dimensional Quantum structures and Quantum Control School of Physics and ElectronicsHunan Normal UniversityChangsha 410006China

Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant *** this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and *** find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric ***,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric *** nanodevice also shows non-volatile resistive memory *** RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au *** results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.

关键词： Au/SnO_(2)NW/Au device resistive switching characteristics resistive switching mechanism

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