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An Efficient Boron Source Activation Strategy for the Low‑Temperature Synthesis of Boron Nitride Nanotubes

Nano-Micro Letters 2025年第1期17卷 548-558页

作者： Ying Wang Kai Zhang Liping Ding Liyun Wu Songfeng E Qian He Nanyang Wang Hui Zuo Zhengyang Zhou Feng Ding Yue Hu Jin Zhang Yagang Yao National laboratory of Solid State Microstructures College of Engineering and Applied SciencesJiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093People’s Republic of China School of electronic Information and Artificial Intelligence Shaanxi University of Science&TechnologyXian 710000People’s Republic of China College of Bioresources Chemical and Materials Engineering Shaanxi University of Science&TechnologyXian 710000People’s Republic of China Key laboratory of Carbon Materials of Zhejiang Province College of Chemistry and Materials EngineeringWenzhou UniversityWenzhou 325000People’s Republic of China Shenzhen Institutes of Advanced Technology Chinese Academy of SciencesShenzhen 518000People’s Republic of China College of Chemical and Molecular Engineering Peking UniversityBeijing 100871People’s Republic of China

Lowering the synthesis temperature of boron nitride nanotubes(BNNTs)is crucial for their *** primary reason for adopting a high temperature is to enable the effective activation of highmelting-point solid *** this study,we developed a novel approach for efficiently activating boron by introducing alkali metal compounds into the conventional MgO–B *** approach can be adopted to form various low-melting-point AM–Mg–B–O growth *** growth systems have improved catalytic capability and reactivity even under low-temperature conditions,facilitating the synthesis of BNNTs at temperatures as low as 850℃.In addition,molecular dynamics simulations based on density functional theory theoretically demonstrate that the systems maintain a liquid state at low temperatures and interact with N atoms to form BN *** findings offer novel insights into the design of boron activation and are expected to facilitate research on the low-temperature synthesis of BNNTs.

关键词： Boron nitride nanotubes Low-temperature Boron activation Density functional theory

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Preface to Special Issue on Advanced Optoelectronic and electronic Devices toward Future Displays--Celebration of the 10th anniversary of the State Key laboratory of Advanced Displays and Optoelectronics Technologies at HKUST

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Journal of Semiconductors 2023年第9期44卷 1-2页

作者： Hoi-Sing Kwok Zhiyong Fan Department of electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SARChina State Key laboratory of Advanced Displays and Optoelectronics Technologies HKUSTClear Water BayKowloonHong Kong SARChina

This year marks the tenth anniversary of the State Key laboratory of Advanced Displays and Optoelectronics Technologies(SKLADOT)at the Hong Kong University of Science and Technology(HKUST).The predecessor of SKLADOT w... 详细信息

关键词： ADO Key UST

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Performance enhancement of perovskite solar cells with Cs2PtI6-xBrx absorber layer based on numerical simulation

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Optoelectronics Letters 2025年

作者： Du Zuyan Yuan Yujie Hou Guofu Xin Yupeng Bi Jinlian Li Wei Tianjin Key laboratory of Film electronic and Communication Devices， School of Integrated Circuit Science and Engineering， Tianjin University of Technology Institute of Photoelectronic Thin Film Devices and Technology， Nankai University

Cs2TiBr6， characterized as a lead-free vacancy-ordered double perovskite material， demonstrates notable stability and photoelectric performance， rendering it suitable for application in perovskite solar cells. However， the experimental efficiency of this material is currently limited， achieving only 3.12%. This efficiency limitation primarily stems from the material’s wide bandgap， which results in insufficient light absorption. To address this issue， this study utilized Cs2PtI6-xBrxfor band structure fine-tuning. By adjusting the bandgap of Cs2PtI6-xBrxthrough Br-doping， not only was the alignment of the energy bandgap in the absorption layer effectively adjusted， but the cutoff range of light absorption was also significantly expanded. Setting the Cs2PtI6-xBrxbandgap to 1.4 eV resulted in optimal device performance. Additionally， comparative analyses aimed at boosting solar cell efficiency were performed on both hole transport and electron transport layer materials. Subsequently， the structure of the perovskite solar cell was optimized using an FTO/TiO2/Cs2TiBr6/Cs2PtI6-xBrx/Cu2O/Au configuration. Furthermore， the influence of the absorber layer thickness and defect density on device performance was studied. Ultimately， this configuration enabled the Cs2TiBr6/Cs2PtI6-xBrxsolar cell to achieve a peak conversion efficiency of 29.69%.

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Multiplexing metal grating coupler based on MIM structure

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Optoelectronics Letters 2025年

作者： LIU Yang LIU Fei MA Yunxia ZHANG Ailing Engineering Research Center of Communication Devices and Technology， Ministry of Education， Tianjin Key laboratory of Film electronic and Communication Devices， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

We propose and numerically investigate a multiplexing metal grating coupler based on metal/insulator/metal （MIM） structure. The coupler consists of gold grating/silicon/gold layers， which combines with MIM waveguide， concurrently achieving path multiplexing and wavelength multiplexing through TMnmodes coupling. In visible light band， TM waves are coupled to the upper surface of gold plate， and the coupling efficiency reaches maximum of 31.67% at wavelength of 736 nm. In near infrared and mid infrared bands， TM waves are coupled into MIM waveguide， and the coupling efficiency reaches maximum of 53.57% at wavelength of 2550 nm. There can be four modes of TM0， TM1， TM2and TM3simultaneously in MIM waveguide， which are excited at different wavelengths. The preparation process of the structure designed in this article is simple， with dimensions at the micrometer level， easy to be integrated， and can be applied to be integrated optical circuits.

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Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD

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Science China(Technological Sciences) 2013年第1期56卷 103-108页

作者： HE Jian LI Wei XU Rui QI KangCheng JIANG YaDong School of Optoelectronic Information University of Electronic Science and Technology of China State Key laboratory of electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon(a-Si:H) thin films was *** with different features were prepared by plasma enhanced chemical vapor deposition(PECVD) at various substrate *** spectroscopy and Fourier transform infrared(FTIR) spectroscopy were used to evaluate the structural evolution,meanwhile,electronic-spin resonance(ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin *** results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

关键词： a-Si:H PECVD Raman FTIR ESR

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Design of high performance multi-notch filters based on photonic crystal nanorod flower-shaped resonators

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Optoelectronics Letters 2025年

作者： YAN WEI ZHANG SHUANGGEN ZHANG WEIWEI Tianjin Key laboratory of Film electronic and Communication Devices， Engineering Research Center of Optoelectronic Devices and Communication Technology， Ministry of Education， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

Photonic crystal notch filter plays a vital role in photonics applications which can selectively attenuate the unwanted interference. However， it remains challenging to achieve high efficiency and is generally limited to the single notch performance. Here， we demonstrated a high efficient all-silicon multi-notch filter scheme utilizing photonic crystal nanorod flower-shaped resonators. Based on the single resonant cavity， the dielectric columns can be introduced to create the intracavity asymmetry achieving double notch， meanwhile by adding the certain scattering nanorods to trap light efficiently， it can also obtain triple notch. The results emanate that the transmission and the Q of single notch up to 2.6% and 16209.4， double notch 0.5%， 0.1% and 12371.7，13934.5， triple notch 0.2%， 0.5%， 2.3%， 2312.9， 2062.8， 2327.4 can be achieved， respectively. The proposed high efficient multi-notch filters could potentially catalyze advancements in filter technology within the realm of silicon photonics applications and optical communication.

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A triple-band miniaturized end-fire antenna based on odd-mode spoof surface plasmonic polariton waveguide resonator

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Optoelectronics Letters 2025年

作者： BAI Yukun MAO Mengqun Tianjin Key laboratory of Film electronic and Communication Devices， Engineering Research Center of Optoelectronic Devices and Communication Technology， Ministry of Education， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

A triple-band miniaturized end-fire antenna based on the odd modes of spoof surface plasmonic polariton (SSPP) waveguide resonator is proposed in this paper. To meet the ever increasing demand for more communication channels and less antenna sizes， multi-band antennas are currently under intensive investigation. By a novel feeding method， three odd modes are excited on an SSPP waveguide resonator， which performs as an end-fire antenna operating at three bands， 7.15-7.26GHz， 11.6-12.2GHz and 13.5-13.64GHz. It exhibits reasonably high and stable maximum gains of 5.26， 7.97 and 10.1dBi and maximum efficiencies of 64%， 92% and 98% at the three bands， respectively. Moreover， in the second band the main beam angle shows a frequency dependence with a total scanning angle of 19°. The miniaturized triple-band antenna has a great potential to be applied in wireless communication systems， satellite communication and radar systems.

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High sensitivity dual polarization four channels surface plasmon resonance refractive index sensor with wide detection range and high linearity based on photonic crystal fiber

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Optoelectronics Letters 2025年

作者： CUI Nan PAN Honggang ZHANG Ailing ZHAO Zihong CHEN Zhipan ZHANG Bo Tianjin Key laboratory of Film electronic and Communication Devices， Engineering Research Center of Optoelectronic Devices and Communication Technology， Ministry of Education， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

In this paper， we propose and numerically characterize the optical characteristics of a high sensitivity dual polarization four channels surface plasmon resonance refractive index sensor with wide detection range and high linearity based on photonic crystal fiber （PCF）. Four light transmission channels are constructed by using big air holes. The small rectangular air hole in the center of the fiber core is used to add asymmetry. We use gold plasma material to achieve better sensing performance. A thin film of TiO2is placed on the PCF surface， which assists gold in the adhesion on PCF. The maximum wavelength sensitivity of the sensor can reach 20000 nm/RIU in both x and y polarization modes. While the maximum wavelength resolution of the sensor is 5×10-6RIU. The average wavelength sensitivity reached 15900nm/RIU and 15800nm/RIU in x and y polarization mode. The sensor features R2=0.9969 / R2=0.9966 high linear performance in x and y polarization mode and the maximum FOM values 509.13 RIU-1/ 489.63 RIU-1in x and y polarization mode. Besides the sensor’s detection range is 1.26-1.36， which is a wide refractive index detection range. The sensor has a wide range of applications in biomedical and other fields.

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自粘式超声波驱动摩擦电纳米发电机用于皮下抗菌和促进伤口愈合（英文）

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Science China Materials 2025年第1期 261-269页

作者：吕晓薇郭春梅罗思晗齐丽娜石静怡赵建航陈莹何爱军范曲立 Key laboratory for Organic electronics & Information Displays and Institute of Advanced Materials Nanjing University of Post & Telecommunications School of electronic Science and Engineering Nanjing University

电刺激疗法在伤口愈合和组织再生方面具有巨大潜力.然而,传统方法通常需要外部电源和可植入电极,这可能限制它们的实际应用.在此,我们报道了一种超声介导的自供电伤口愈合装置(LH-TENG)的开发,该装置采用皮肤粘附性AgC@L-g-PAM/HPC水凝...

电刺激疗法在伤口愈合和组织再生方面具有巨大潜力.然而,传统方法通常需要外部电源和可植入电极,这可能限制它们的实际应用.在此,我们报道了一种超声介导的自供电伤口愈合装置(LH-TENG)的开发,该装置采用皮肤粘附性AgC@L-g-PAM/HPC水凝胶作为电极,在超声介导下, LH-TENG能牢固附着在组织表面,并在伤口区域周围产生均匀的电场,促进细胞迁移、增殖并加速愈合.此外,该装置表现出抗菌特性,因此其在治疗感染的慢性伤口方面具有潜力.

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electronic structure and optical properties of Mg_xZn_(1-x)S bulk crystal using first-principles calculations

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Chinese Physics B 2014年第10期23卷 441-446页

作者：余志强徐智谋武兴会 Wuhan National laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and Technology

We perform the first-principles calculations within the framework of density functional theory to determine the elec- tronic structure and optical properties of MgxZnl-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZnl_xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZnl-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant compo- sition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZnl_xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors.

关键词： first-principles MgxZn1-xS electronic structure optical properties

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