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Proton‑Prompted Ligand Exchange to Achieve High‑Efficiency CsPbI_(3) quantum Dot Light‑Emitting Diodes

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nano-micro Letters 2024年第6期16卷 53-62页

作者： Yanming Li Ming Deng Xuanyu Zhang Lei Qian Chaoyu Xiang laboratory of Advanced nano‑optoelectronic materials and Devices Qianwan Institute of CNITECHNingbo 315300People’s Republic of China Division of Functional materials and nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201People’s Republic of China Zhejiang Provincial engineering Research Center of energy optoelectronic materials and Devices Ningbo Institute of Materials Technology&EngineeringChinese Academy of SciencesNingbo 315201People’s Republic of China faculty of Electrical engineering and Computer Science Ningbo UniversityNingbo 315211ZhejiangPeople’s Republic of China University of Nottingham Ningbo China Ningbo 315100People’s Republic of China

CsPbI_(3)perovskite quantum dots(QDs)are ideal materials for the next generation of red light-emitting ***,the low phase stability of CsPbI_(3)QDs and long-chain insulating capping ligands hinder the improvement of device *** in-situ ligand replacement and ligand exchange after synthesis were often difficult to ***,we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI_(3)*** exchange strategy maintained the size and morphology of CsPbI_(3)QDs and improved the optical properties and the conductivity of CsPbI_(3)QDs *** a result,high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45%and an operational half-life of 10.79 h.

关键词： CsPbI_(3) perovskite quantum dots Light-emitting diodes Ligand exchange Proton-prompted in-situ exchange

Angle-resolved photoemission study of NbGeSb with non-symmorphic symmetry

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Chinese physics B 2024年第2期33卷 464-470页

作者：马欢谭宁吴徐传李满王义炎路洪艳夏天龙王善才 Department of physics Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education)Renmin University of ChinaBeijing 100872China Beijing Key laboratory of Opto-Electronic Functional materials&micro-nano Devices Renmin University of ChinaBeijing 100872China School of Information Network Security People’s Public Security University of ChinaBeijing 100038China Institute of Physical Science and Information technology Anhui UniversityHefei 230601China School of physics and Physical engineering Qufu Normal UniversityQufu 273165China

We investigate the electronic structure of NbGeSb with non-symmorphic *** employ angle-resolved photoemission spectroscopy(ARPES)to observe and identify the bulk and surface states over the Brillouin *** utilizing high-energy photons,we identify the bulk Fermi surface and bulk nodal line along the direction X–R,while the Fermi surface of the surface state is observed by using low-energy *** observe the splitting of surface bands away from the high-symmetry point *** density functional theory calculations on bulk and 1 to 5-layer slab models,as well as spin textures of NbGeSb,verify that the band splitting could be attributed to the Rashba-like spin–orbit coupling caused by space-inversion-symmetry breaking at the *** splitted surface bands cross with each other,forming two-dimensional Weyl-like crossings that are protected by mirror *** findings provide insights into the two-dimensional topological and symmetry-protected band inversion of surface states.

关键词： non-symmorphic symmetry nodal line splitting of surface bands angle-resolved photoemission spectroscopy

一种实现单层MoS_(2)光致发光显著增强的有效缺陷工程策略

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Science China materials 2024年第7期67卷 2232-2238页

作者：陈荧黄卓睿刘华伟喻国粮张金鼎徐哲元陈明星李东马超黄明朱小莉陈舒拉蒋英潘安练 Key laboratory for micro-nano physics and technology of Hunan Province Hunan Institute of Optoelectronic IntegrationSchool of Physics and ElectronicsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China School of physics and Electronics Hunan Normal UniversityChangsha 410081China State Key laboratory of Powder Metallurgy Central South UniversityChangsha 410083China

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2)的有效缺陷工程策... 详细信息

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2)的有效缺陷工程策略,该策略在实验上通过简便的化学气相沉积(CVD)一步法成功实现.所制备的具有亚毫米(~324μm)级的大尺寸样品的光致发光可实现高达两个数量级的增强,并伴随着载流子寿命的显著增强.这一现象主要归因于Sr掺杂后MoS_(2)体系中其三激子向激子转换.与此同时,掺杂样品的辐射质量和稳定性也显著提升.第一性原理计算进一步阐明了其调控机制,即在MoS_(2)中引入适当互补缺陷能级与其自身的缺陷能级协同,从而可调节其载流子组分,以实现光致发光的显著增强.此外,我们的缺陷工程策略也适用于其他掺杂剂,如钙掺杂剂.我们的工作报告了一种可以显著提升单层MoS_(2)的荧光性能的有效缺陷工程策略,这为设计和调控二维TMDCs的光电特性提供一种极具前途的方法.

关键词： MoS_(2) substitutional doping photoluminescence in-tensity enhancement first-principles calculations

Highly Thermoconductive,Strong Graphene‑Based Composite Films by Eliminating nanosheets Wrinkles

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nano-micro Letters 2024年第1期16卷 328-340页

作者： Guang Xiao Hao Li Zhizhou Yu Haoting Niu Yagang Yao College of engineering and Applied Sciences Jiangsu Key Laboratory of Artificial Functional Materialsand Collaborative Innovation Center of Advanced MicrostructuresNational Laboratory of Solid State MicrostructuresNanjing UniversityNanjing 210093People’s Republic of China Institute of Laser Manufacturing Henan Academy of SciencesZhengzhou 450052People’s Republic of China Center for quantum Transport and Thermal energy Science School of Physics and TechnologyNanjing Normal UniversityNanjing 210023People’s Republic of China

Graphene-based thermally conductive composites have been proposed as effective thermal management materials for cooling high-power electronic ***,when flexible graphene nanosheets are assembled into macroscopic thermally conductive composites,capillary forces induce shrinkage of graphene nanosheets to form wrinkles during solution-based spontaneous drying,which greatly reduces the thermal conductivity of the ***,graphene nanosheets/aramid nanofiber(GNS/ANF)composite films with high thermal conductivity were prepared by in-plane stretching of GNS/ANF composite hydrogel networks with hydrogen bonds andπ-π*** in-plane mechanical stretching eliminates graphene nanosheets wrinkles by suppressing inward shrinkage due to capillary forces during drying and achieves a high in-plane orientation of graphene nanosheets,thereby creating a fast in-plane heat transfer *** composite films(GNS/ANF-60 wt%)with eliminated graphene nanosheets wrinkles showed a significant increase in thermal conductivity(146 W m^(−1)K^(−1))and tensile strength(207 MPa).The combination of these excellent properties enables the GNS/ANF composite films to be effectively used for cooling flexible LED chips and smartphones,showing promising applications in the thermal management of high-power electronic devices.

关键词： Graphene Aramid nanofiber Wrinkles elimination In-plane stretching Thermal conductivity

大n值准相纯二维卤化物钙钛矿:从材料到器件的工具箱

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Science Bulletin 2024年第3期69卷 382-418页

作者：李子佳林越辛顾浩张楠王斌蔡海蕊廖金凤于德见陈义旺方国家梁超杨生春邢贵川 MOE Key laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of PhysicsNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyXi’an Jiaotong UniversityXi’an 710049China Joint Key laboratory of the Ministry of Education Institute of Applied Physics and Materials EngineeringUniversity of MacaoMacao 999078China National engineering Research Center for Carbohydrate Synthesis Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of EducationJiangxi Normal UniversityNanchang 330022China Key laboratory of Artificial micro/nano Structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China

Despite their excellent environmental stability,low defect density,and high carrier mobility,large-n quasi-two-dimensional halide perovskites(quasi-2DHPs)feature a limited application scope because of the formation of self-assembled multiple quantum wells(QWs)due to the similar thermal stabilities of large-n ***,large-n quasi-phase-pure 2DHPs(quasi-PP-2DHPs)can solve this problem *** review discusses the structures,formation mechanisms,and photoelectronic and physical properties of quasi-PP-2DHPs,summarises the corresponding single crystals,thin films,and heterojunction preparation methods,and presents the related ***,we focus on applications of large-n quasi-PP-2DHPs in solar cells,photodetectors,lasers,light-emitting diodes,and field-effect transistors,discuss the challenges and prospects of these emerging photoelectronic materials,and review the potential technological developments in this area.

关键词： Tow-dimensional halide perovskite Pure phase Large-n value Single crystal Thin film Heterojunction

engineering phonon thermal transport in few-layer PdSe_(2)

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Frontiers of physics 2024年第3期19卷 135-141页

作者： Meilin Li Huanhuan Sun Jun Zhou Yunshan Zhao Phonon engineering Research Center of Jiangsu Province Center for Quantum Transport and Thermal Energy ScienceInstitute of Physics Frontiers and Interdisciplinary SciencesSchool of Physics and TechnologyNanjing Normal UniversityNanjing 210023China

engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric ***,due to the difficulties of micro and nano processing and characterization techniques,the work on tuning phonon transport at nanoscale are *** this work,by introducing Ar+plasma,we probed the phonon transport in two-dimensional(2D)layered semiconductor PdSe_(2)under different defect *** using thermal bridge method,the thermal conductivity was measured to decrease by 50%after a certain Ar+irradiation,which implied a possible phase ***,Raman characterizations were performed to show that the Raman sensitive peaks of PdSe_(2)was red-shifted and finally became disappeared with the increase of defect concentration.“Defect engineering”proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials,thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.

关键词： phonon transport PdSe_(2) defects thermal bridge method

大n值准相纯二维卤化物钙钛矿:从材料到器件的工具箱（英文）

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Science Bulletin 2024年第3期 382-418页

作者：李子佳林越辛顾浩张楠王斌蔡海蕊廖金凤于德见陈义旺方国家梁超杨生春邢贵川 MOE Key laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of Physics National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology Xi'an Jiaotong University Joint Key laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau National engineering Research Center for Carbohydrate Synthesis Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal University Key laboratory of Artificial micro/nano Structures of Ministry of Education School of Physics and Technology Wuhan University

Despite their excellent environmental stability, low defect density, and high carrier mobility, large-n quasi-two-dimensional halide perovskites(quasi-2DHPs) feature a limited application scope because of the formation of self-assembled multiple quantum wells(QWs) due to the similar thermal stabilities of large-n phases. However, large-n quasi-phase-pure 2DHPs(quasi-PP-2DHPs) can solve this problem perfectly. This review discusses the structures, formation mechanisms, and photoelectronic and physical properties of quasi-PP-2DHPs, summarises the corresponding single crystals, thin films, and heterojunction preparation methods, and presents the related advances. Moreover, we focus on applications of large-n quasi-PP-2DHPs in solar cells, photodetectors, lasers, light-emitting diodes, and field-effect transistors, discuss the challenges and prospects of these emerging photoelectronic materials, and review the potential technological developments in this area.

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高效蓝光钙钛矿发光二极管的埋底界面修饰和光耦合策略

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Science Bulletin 2024年第14期69卷 2231-2240页

作者：王舒欣余知秋秦佳俊陈国毅刘永杰樊帅伟马超姚方崔鸿森周顺董开连林乾乾陶晨高峰柯维俊方国家 Key Lab of Artificial micro-and nano-Structures of Ministry of Education of China School of Physics and TechnologyWuhan UniversityWuhan 430072China Department of physics Chemistry and Biology(IFM)Linköping UniversityLinköping SE-58183Sweden Department of physics China Three Gorges UniversityYichang 443002China Key laboratory of Flexible Electronics(KLOFE) Institute of Advanced Materials(IAM)School of Flexible Electronics(Future Technologies)Nanjing Tech UniversityNanjing 211816China School of Electronic and Electrical engineering Wuhan Textile UniversityWuhan 430200China

Perovskite light-emitting diodes(PeLEDs)exhibit remarkable potential in the field of displays and solidstate ***,blue PeLEDs,a key element for practical applications,still lag behind their green and red counterparts,due to a combination of strong nonradiative recombination losses and unoptimized device *** this report,we propose a buried interface modification strategy to address these challenges by focusing on the bottom-hole transport layer(HTL)of the *** the one hand,a multifunctional molecule,aminoacetic acid hydrochloride(AACl),is introduced to modify the HTL/perovskite interface to regulate the perovskite *** investigations and theoretical calculations demonstrate that AACl can effectively reduce the nonradiative recombination losses in bulk perovskites by suppressing the growth of low-n perovskite phases and also the losses at the bottom interface by passivating interfacial *** the other hand,a self-assembly nanomesh structure is ingeniously developed within the *** nanomesh structure is meticulously crafted through the blending of poly-(9,9-dioctyl-fluorene-co-N-(4-butyl phenyl)diphenylamine)and poly(n-vinyl carbazole),significantly enhancing the light outcoupling efficiency in *** a result,our blue PeLEDs achieve remarkable external quantum efficiencies,20.4%at 487 nm and 12.5%at 470 nm,which are among the highest reported *** results offer valuable insights and effective methods for achieving high-performance blue PeLEDs.

关键词： Buried interface Light outcoupling strategy Perovskite light-emittingdiode Blueemission

M_(4)X_(3) MXenes:Application in energy Storage Devices

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nano-micro Letters 2024年第10期16卷 522-542页

作者： Iftikhar Hussain Waqas Ul Arifeen Shahid Ali Khan Sikandar Aftab Muhammad Sufyan Javed Sajjad Hussain Muhammad Ahmad Xi Chen Jiyun Zhao PRosaiah Khaled Fahmi Fawy Adnan Younis Sumanta Sahoo Kaili Zhang Department of Mechanical engineering City University of Hong Kong83 Tat Chee AvenueKowloon TongHong KongPeople's Republic of China School of Mechanical engineering Yeungnam UniversityDaehak-roGyeongsan-siGyeongbuk-do 38541South Korea Department of Semiconductor Systems engineering and Clean energy Sejong UniversitySeoul 05006Republic of Korea School of Physical Science and technology Lanzhou UniversityLanzhou 730000People's Republic of China Department of nanotechnology and Advanced materials engineering Sejong UniversitySeoul 05006Republic of Korea Department of physics Saveetha School of EngineeringSaveetha Institute of Medical and Technical Sciences(SIMATS)ThandalamChennai 602105India Department of Chemistry Faculty of ScienceKing Khalid UniversityP.O.Box 900461413 AbhaSaudi Arabia Department of physics College of ScienceUnited Arab Emirates UniversityP.O.Box 15551Al-AinUnited Arab Emirates School of Chemical engineering Yeungnam UniversityGyeongsanGyeongbuk 38541South Korea

MXene has garnered widespread recognition in the scientific com-munity due to its remarkable properties,including excellent thermal stability,high conductivity,good hydrophilicity and dispersibility,easy processability,tunable surface properties,and admirable *** have been categorized into different families based on the number of M and X layers in M_(n+1)X_(n),such as M_(2)X,M_(3)X_(2),M_(4)X_(3),and,recently,M_(5)X_(4).Among these families,M_(2)X and M_(3)X_(2),par-ticularly Ti_(3)C_(2),have been greatly explored while limited studies have been given to M_(5)X_(4)MXene ***,studies on the M_(4)X_(3)MXene family have developed recently,hence,demanding a compilation of evaluated ***,this review provides a systematic overview of the latest advancements in M_(4)X_(3)MXenes,focusing on their properties and applications in energy storage *** objective of this review is to provide guidance to researchers on fostering M_(4)X_(3)MXene-based nanomaterials,not only for energy storage devices but also for broader applications.

关键词： MXene M_(4)X_(3)MXenes 2D materials energy storage Properties