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Defects‑Rich Heterostructures Trigger Strong Polarization Coupling in Sulfides/Carbon Composites with Robust Electromagnetic Wave Absorption

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Nano-micro Letters 2025年第1期17卷 528-547页

作者： Jiaolong Liu Siyu Zhang Dan Qu Xuejiao Zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi Zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu Mengyang Li Bing Wei Hongjing Wu School of Physics Xidian UniversityXi’an 710071People’s Republic of China School of Advanced Materials and nanotechnology State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an 710071People’s Republic of China School of microelectronics Xidian UniversityXi’an 710071People’s Republic of China School of Telecommunication Engineering Xidian UniversityXi’an 710071People’s Republic of China MOE Key laboratory of Material Physics and Chemistry Under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China The Ministry of Education Key laboratory of micro and Nano Systems forAerospace School of Mechanical EngineeringNorthwestern PolytechnicalUniversityXi’an 710072People’s Republic of China

Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic *** methods,however,constrain their delicate ***,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon *** unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial ***“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first ***,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric *** defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response.

关键词： Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption

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Scaling properties of phase-change line memory

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Chinese Physics B 2012年第9期21卷 554-558页

作者：杜小锋宋三年宋志棠刘卫丽吕士龙顾怡峰薛维佳席韡 State Key laboratory of Functional Materials for Informatics Laboratory of NanotechnologyShanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

关键词： phase-change memory line structure scaling properties three-dimensional simulation

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High-aspect-ratio nanoimprint process chains

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microsystems & Nanoengineering 2017年第1期3卷 221-232页

作者： Víctor J.Cadarso Nachiappan Chidambaram Loïc Jacot-Descombes Helmut Schift laboratory for micro-and nanotechnology Research Division Synchrotron Radiation and NanotechnologyPaul Scherrer InstitutVilligen 5232Switzerland micro Resist Technology GmbH Köpenicker Straße 325Berlin 12555Germany

Different methods capable of developing complex structures and building elements with high-aspect-ratio nanostructures combined with microstructures,which are of interest in nanophotonics,are *** originals for subsequent replication steps,two families of masters were developed:(i)3.2μm deep,180 nm wide trenches were fabricated by silicon cryo-etching and(ii)9.8μm high,350 nm wide ridges were fabricated using 2-photon polymerization direct laser *** emerging technologies enable the vertical smooth sidewalls needed for a successful imprint into thin layers of polymers with aspect ratios exceeding *** with high aspect ratios of up to 28 and no residual layer were produced in Ormocers using the micromoulding into capillaries(MIMIC)process with subsequent *** work presents and balances the different fabrication routes and the subsequent generation of working tools from masters with inverted tones and the combination of hard and soft *** provides these techniques with a proof of concept for their compatibility with high volume manufacturing of complex micro-and nanostructures.

关键词： cryo-etching direct 6 write laser lithography high aspect ratio moulding nanoimprint lithography Ormocer photonic nanofences 2-photon polymerization

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A Compact Spice Model with Verilog-A for Phase Change Memory

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Chinese Physics Letters 2011年第1期28卷 212-214页

作者： CAI Dao-Lin SONG Zhi-Tang LI Xi CHEN Hou-Peng CHEN Xiao- Gang State Key laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050

A compact spice model of the phase change memory with the crystalline fraction as the switching by Verilog-A language is proposed and demonstrated. The model can simulate not only the resistance change by the different electrical pulse, but also the temperature profile and crystalline fraction during programming operation. The simulated resistance as a function of the amplitude of programming voltage pulses is in good agreement with the experimental data.

关键词： Electronics and devices

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A 0.18-μm 3.3 V 16 k Bits 1RIT Phase Change Random Access Memory （PCRAM） Chip

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Chinese Physics Letters 2008年第10期25卷 3815-3817页

作者：丁晟宋志棠刘波朱敏陈小刚陈一峰沈菊富聪封松林 State Key laboratory of Functional Materials for Informatics Laboratory of Nanotechnology ShanghM Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050

Using standard 0.18-μm CMOS process and the special platform for S-inch phase change random access memory （PCRAM）, the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1RIT structure has been designed for low voltage drop and low cost compared to the 1RlD structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material （PCM） fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip.

关键词： Random Chip phase change random access memory (PCRAM)

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Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

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Chinese Physics Letters 2010年第6期27卷 250-253页

作者： GONG Yue-Feng SONG Zhi-Tang LING Yun LIU Yan LI Yi-Jin State Key laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050

A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during （SET） operation. The model is applied to simulate the SET behaviors of the heater addition structure （HS） and the ring-type contact in the bottom electrode （RIB） structure. The simulation results indicate that the small bottom electrode contactor （BEC） is beneficial for heat efficiency and reliability in the HS cell, and the bottom electrode contactor with size Fx=80 nm is a good choice for the RIB cell. Also shown is that the appropriate SET pulse time is lOOns for the low power consumption and fast operation.

关键词： SIMULATION methods & models PHASE transformations (Physics) RANDOM access memory ELECTRODES RELIABILITY (Engineering) ENERGY consumption

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Nanoimprint Lithography:A Processing Technique for Nanofabrication Advancement

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Nano-micro Letters 2011年第2期3卷 135-140页

作者： Weimin Zhou Guoquan Min Jing Zhang Yanbo Liu Jinhe Wang Yanping Zhang Feng Sun laboratory of nanotechnology Shanghai Nanotechnology Promotion Center (SNPC)

Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication *** to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological *** this paper,we present an overview of nanoimprint *** classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been ***-wafer nanoimprint lithography has been completed on a 12-inch ***,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.

关键词： Nanoimprint lithography Soft molecular scale Nanofabrication

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A novel low ripple charge pump with a 2X/1.5X booster for PCM

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Journal of Semiconductors 2012年第9期33卷 89-94页

作者：富聪宋志棠陈后鹏蔡道林王倩宏潇丁晟李喜 State Key laboratory of Functional Materials for Informatics Laboratory of NanotechnologyShanghai Institute of Micro-system and Information TechnologyChinese Academy of SciencesShanghai 200050China

A low ripple switched capacitor charge pump applicable to phase change memory （PCM） is presented. For high power efficiency, the selected charge pump topology can automatically change the power conversion ratio between 2X/1.5X modes with the input voltage. For a low output ripple, a novel operation mode is used. Compared with the conventional switched capacitor charge pump, the flying capacitor of the proposed charge pump is charged to Vo- 14n during the charge phase （Vo is the prospective output voltage）. In the discharge phase, the flying capacitor is placed in series with the Vin to transfer energy to the output, so the output voltage is regulated at Vo. A simulation was implemented for a DC input range of 1.6-2.1 V in on SMIC standard 40 nm CMOS process, the result shows that the new operation mode could regulate the output of about 2.5 V with a load condition from 0 to 10 mA, and the ripple voltage is lower than 4 mV. The maximum power efficiency reaches 91%.

关键词： charge pump DC to DC converter PCM drivers low ripple power efficiency

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Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

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Progress in Natural Science:Materials International 2016年第3期26卷 232-236页

作者： Itir Bakis Dogru Mete Batuhan Durukan Onur Turel Husnu Emrah Unalan micro and nanotechnology Department METU Department of Metallurgical and Materials Engineering METU

In this work, vertically aligned carbon nanotubes（VACNTs） grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition（CVD）method. Solution based ultrasonic spray pyrolysis（USP） method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the supercapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 m F/cm;at a scan rate of 800 m V/s was obtained from the fabricated electrodes, which is further improved through the bending cycles.

关键词： Supercapacitor electrodes Carbon nanotubes Flexibility

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Peptide Functionalized Nanoplasmonic Sensor for Explosive Detection

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Nano-micro Letters 2016年第1期8卷 36-43页

作者： Diming Zhang Qian Zhang Yanli Lu Yao Yao Shuang Li Jing Jiang Gang Logan Liu Qingjun Liu Biosensor National Special laboratory Key Laboratory for Biomedical Engineering of Education Ministry Department of Biomedical Engineering Zhejiang University micro and nanotechnology Lab University of Illinois at Urbana-Champaign

In this study, a nanobiosensor for detecting explosives was developed, in which the peptide was synthesized with trinitrotoluene(TNT)-specific sequence and immobilized on nanodevice by Au–S covalent linkage, and the nanocup arrays were fabricated by nanoimprint and deposited with Au nanoparticles to generate localized surface plasmon resonance(LSPR). The device was used to monitor slight change from specific binding of 2,4,6-TNT to the peptide. With high refractive index sensing of ~10~4nm/RIU, the nanocup device can detect the binding of TNT at concentration as low as3.12×10^(-7)mg mL^(-1) by optical transmission spectrum modulated by LSPR. The nanosensor is also able to distinguish TNT from analogs of 2,4-dinitrotoluene and 3-nitrotoluene in the mixture with great selectivity. The peptide-based nanosensor provides novel approaches to design versatile biosensor assays by LSPR for chemical molecules.

关键词： Nanocup arrays Peptide 2,4,6-trinitrotoluene(TNT) Localized surface plasmon resonance(LSPR) Nanosensor

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