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Pseudocapacitive Vanadium-based materials toward High-Rate Sodium-Ion Storage

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Energy & Environmental materials 2020年第3期3卷 221-234页

作者： Qiulong Wei Ryan H.De Block Danielle M.Butts Christopher Choi Bruce Dunn Department of materials Science and Engineering Fujian Key Laboratory of Materials GenomeCollege of MaterialsXiamen UniversityXiamen Fujian 361005China National Research Council Postdoctoral Associate U.S.Naval Research LaboratoryWashington DC 20375USA Department of materials Science and Engineering University of California Los AngelesLos Angeles CA 90095–1595USA

Sodium-ion battery materials and devices are promising candidates for largescale applications,owing to the abundance and low cost of sodium *** sodium-ion pseudocapacitive materials provide one approach for achieving high capacity at high rates,but are currently not well ***,a comprehensive overview of the fundamentals and electrochemical behaviors of vanadium-based pseudocapacitive materials for sodium-ion storage is *** insight of sodium-ion storage mechanisms for various vanadium-based materials,including vanadium oxides,vanadates,vanadium sulfides,nitrides,and carbides are systematically discussed and *** particular,areas for further development to improve fundamental understanding of electrochemical and structural properties of materials are ***,we provide a perspective on the application of pseudocapacitive materials in high-power and high-energy sodium-ion storage devices(e.g.,sodium-ion capacitors).

关键词： charge-storage mechanism nanomaterials pseudocapacitance sodium-ion capacitors vanadium-based materials

Ultra-low-loss on-chip zero-index materials

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Light(Science & Applications) 2021年第1期10卷 106-114页

作者： Tian Dong Jiujiu Liang Sarah Camayd-Munoz Yueyang Liu Haoning Tang Shota Kita Peipei Chen Xiaojun Wu Weiguo Chu Eric Mazur Yang Li State Key laboratory of Precision Measurement Technology and Instrument Department of Precision InstrumentTsinghua University100084 BeijingChina John A.Paulson School of Engineering and Applied Sciences Harvard UniversityCambridgeMA 02138USA CAS Key laboratory for Nanophotonic materials and devices Nanofabrication LaboratoryCAS Center for Excellence in NanoscienceNational Center for Nanoscience and Technology100190 BeijingChina Department of Electronic and Information Engineering Beihang University100191 BeijingChina

Light travels in a zero-index medium without accumulating a spatial phase,resulting in perfect spatial *** coherence brings several potential applications,including arbitrarily shaped waveguides,phase-mismatch-free nonlinear propagation,large-area single-mode lasers,and extended superradiance.A promising platform to achieve these applications is an integrated Dirac-cone material that features an impedance-matched zero *** an integrated Dirac-cone material eliminates ohmic losses via its purely dielectric structure,it still entails out-of-plane radiation loss,limiting its applications to a small *** design an ultra-low-loss integrated Dirac cone material by achieving destructive interference above and below the *** material consists of a square array of low-aspectratio silicon pillars embedded in silicon dioxide,featuring easy fabrication using a standard planar *** design paves the way for leveraging the perfect spatial coherence of large-area zero-index materials in linear,nonlinear,and quantum optics.

关键词： index perfect purely

Robust Generation of Three-Particle W State with Atoms Trapped in Separate Cavities

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Communications in Theoretical Physics 2012年第10期58卷 493-496页

作者：辛斌贾仁需郑亦庄 Key Laboratoey of Ministry of Education for Wide Band-Gap Semiconductor materials and devices School of MicroelectronicsXidian University College of Physics and Electric Information Wenzhou University

This paper presents a scheme for generating three-particle W state of remote atoms trapped in leaky *** scheme uses cavity decay to inject photons into a setup of optical devices which consist of a series of beam splitters and photon *** detection on the output mode projects the atomic state into the W *** the condition of "weakly driven approach",it shows that the scheme is robust and has high *** also points out that the scheme is scalable to generate multi-atomic W state.

关键词： entanglement W-state QED

Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO_(x) transistors and exploration in digital circuits

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Journal of materials Science & Technology 2021年第28期87卷 143-154页

作者： Bing Yang Gang He Qian Gao Wenhao Wang Yongchun Zhang Yufeng Xia Xiaofen Xu Leini Wang Miao Zhang School of Physics and materials Science Radiation Detection Materials&Devices LabAnhui UniversityHefei230601China Institute of Physical Science and Information Technology Anhui UniversityHefei230601China School of Mechanical Engineering Anhui Vocational and Technical CollegeHefei230011China

In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated *** have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band *** distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 *** confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 *** a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption.

关键词： Dysprosium oxide(DyO_(x)) Thin film transistors(TFTs) Aging-diffusion Inverter Illumination bias stability

High-performance flexible perovskite photodetectors based on single-crystal-like two-dimensional Ruddlesden-Popper thin films

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Carbon Energy 2023年第2期5卷 250-259页

作者： Chao Liang Hao Gu Junmin Xia Tanghao Liu Shiliang Mei Nan Zhang Yonghua Chen Guichuan Xing Joint Key laboratory of the Ministry of Education Institute of Applied Physics and Materials EngineeringUniversity of MacaoAvenida da UniversidadeTaipaMacaoPR China Key laboratory of Flexible Electronics(KLOFE) Jiangsu National Synergetic Innovation Centre for Advanced Materials(SICAM)Institution of Advanced Materials(IAM)Nanjing Tech University(NanjingTech)NanjingJiangsuPR China

Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their threedimensional ***,high-performance photodetectors based on single-crystal and polycrystalline thin-films 2DRP perovskites have shown great potential for practical ***,the complex growth process of single-crystal membranes and uncontrollable phase distribution of polycrystalline films hinder the further development of 2DRP perovskites ***,we report a series of high-performance photodetectors based on single-crystal-like phase-pure 2DRP perovskite films by designing a novel spacer *** and theoretical evidence demonstrates that phase-pure films substantially suppress defect states and ion *** highly sensitive photodetectors show I_(light)/I_(dark) ratio exceeding 3×10^(4),responsivities exceeding 16 A/W,and detectivities exceeding 3×10^(13) Jones,which are higher at least by 1 order than those of traditional mixed-phase thinfilms 2DRP devices(close to the reported single-crystal devices).More importantly,this strategy can significantly enhance the operational stability of optoelectronic devices and pave the way to large-area flexible productions.

关键词： flexibility photodetectors single-crystal-like stability two-dimensional perovskites

Dual-polarization two-dimensional valley photonic crystals

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Science China(Physics,Mechanics & Astronomy) 2022年第8期65卷 102-109页

作者： Xin-Tao He Jian-Wei Liu Fu-Long Shi Ke Shen Wen-Jie Chen Xiao-Dong Chen Jian-Wen Dong School of Physics State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou510275China

The recent realization of valley physics in photonic systems has enriched the topological phases of light with protected edge modes and shown applications in designing high-performance photonic devices. However, the widely reported valley Hall effect of light in two-dimensional systems is limited to one single polarization. Here, we present dual-polarization two-dimensional valley photonic crystals by simultaneously opening two frequency accidental degenerate Dirac cones. Two band gaps with different polarizations are characterized by opposite-valley Chern numbers, which are confirmed by the opposite-phase vortex distributions of bulk modes and opposite Berry curvatures. This situation results in the polarization-dependent refraction of bulk and edge modes, which locate in opposite valleys. The polarization-independent topological valley transport is also demonstrated. Our work shows the flexible control of light in topological photonic systems with a polarization degree of freedom and has applications in polarization multiplexing photonic devices.

关键词： topological photonics valley photonic crystals polarization

Giant electrocaloric effect in BiFeO_(3) and La codoped PbZr_(0.7)Ti_(0.3)O_(3) epitaxial thin films in a broad temperature range

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Journal of Materiomics 2022年第1期8卷 156-165页

作者： Miaomiao Zhang Laijun Liu Rusen Yang Ping Yu Qi Zhang Biaolin Peng Guangxi Key laboratory of Processing for Non-ferrous Metal and Featured materials Center on Nanoenergy ResearchGuangxi UniversityNanning530004China Guangxi Key laboratory of Optical and Electronic materials and devices Guilin University of TechnologyGuilin541004China School of Advanced materials and Nanotechnology Xidian UniversityXi'an710126China College of Material Science and Engineering Sichuan UniversityChengdu610064China BCmaterials Basque Centre for MaterialsApplications and NanostructuresUPV/EHU Science Park48940LeioaSpain IKERBASQUE Basque Foundation for SciencePlaza Euskadi5Bilbao48009Spain

Ferroelectric thin/thick films with large electrocaloric(EC)effect are critical for solid state cooling ***,large positive EC effects with two EC peaks in a broad temperature range(~100 K)were obtained in 0.95Pb_(0.92)La_(0.08)(Zr_(0.70)Ti_(0.30))_(0.98)O_(3)-0.05BiFeO_(3)(BFO-La-codoped PZT)epitaxial thin films deposited on the(100),(110)and(111)oriented SrTiO_(3)(STO)substrates by a sol-gel *** thin film deposited on the(111)oriented STO substrate exhibited a stronger EC effect(~20.6 K at 1956 kV/cm)near room ***,the thin films deposited on the(100)and(110)oriented STO substrates exhibited a stronger EC effect(~18.8 K at 1852 kV/cm and~20.8 K at 1230 kV/cm,respectively)around the peak of the dielectric permittivity(T_(m),~375 K).Particularly,as the direction of the applied electric field was switched(Edevices.

关键词： Sol-gel Epitaxial thin film Electrocaloric effect Self-induce-poled

Recent advances in recyclable thermosets and thermoset composites based on covalent adaptable networks

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Journal of materials Science & Technology 2021年第33期92卷 75-87页

作者： Yihe Zhang Li Zhang Guotao Yang Yalin Yao Xu Wei Tianchi Pan Juntao Wu Moufeng Tian Penggang Yin Beijing Key laboratory of materials Utilization of Nonmetallic Minerals and Solid Wastes School of Materials Science and TechnologyChina University of GeosciencesBeijing 100083China Beijing Composite materials Co. Ltd.Beijing 102101China State Key laboratory of Advanced Fiber Composites Beijing 102101China School of Chemistry Beihang UniversityBeijing 100191China

Recyclable thermosets and thermoset composites with covalent adaptable networks(CANs,or dynamic covalent networks) have attracted considerable attention in recent years due to the combined merits of excellent mechanical and thermal properties,and chemical stabilities of traditional thermosets and recyclable,remoldable,and reprocessable attributes of *** this paper,we present an overview of the current strategies for synthesizing recyclable thermosets based on CANs,which involve recyclability,reprocessability,and possible *** recent literature examples are categorized based on the underlying controlled-cleavable linkages such as transesterification,DA/retro-DA chemistry,imine bonds,disulfide metathesis,dynamic B-O bonds,hemiaminals/hexahydrotriazines,and acetal *** degradation and malleability methods and resulting mechanical properties of the recycled thermosets and thermoset composites are *** emerging applications of recyclable thermosets and thermoset composites,with emphasis on their usage in adhesives,biomedical materials,wearable devices,coatings,and 3D printing materials,are also ***,a perspective on the challenges and future perspectives is briefly summarized.

关键词： Covalent adaptable networks(CANs) Recyclable Crosslink Degradation Property

Engineered photonic spin Hall effect of Gaussian beam in antisymmetric parity-time metamaterials

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中国物理B:英文版 2023年第9期32卷 255-260页

作者：刘露遥冯振校邓冬梅王光辉 Guangdong Provincial Key laboratory of Nanophotonic Functional materials and devices South China Normal UniversityGuangzhou 510006China Guangzhou Key laboratory for Special Fiber Photonic devices South China Normal UniversityGuangzhou 510006China

A model of the photonic spin Hall effect(PSHE)in antisymmetric parity-time(APT)metamaterials with incidence of Gaussian beams is proposed *** derive the displacement expression of the PSHE in APT metamaterials based on the transport properties of Gaussian beams in positive and negative refractive index ***,detailed discussions are provided on the APT scattering matrix,eigenstate ratio,and response near exceptional points in the case of loss or *** contrast to the unidirectional non-reflection in parity-time(PT)symmetric systems,the transverse shift that arises from both sides of the APT structure is *** effectively adjusting the parameters of APT materials,we achieve giant displacements of the transverse ***,we present a multi-layer APT structure consisting of alternating left-handed and right-handed *** increasing the number of layers,Bragg oscillations can be generated,leading to an increase in resonant peaks in transverse *** study presents a new approach to achieving giant transverse shifts in the APT *** lays a theoretical foundation for the fabrication of related nano-optical devices.

关键词： antisymmetric parity-time photonic spin Hall effect Gaussian beam