检索结果-南通市图书馆

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

在线全文

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第2期67卷 335-336页

作者： Kui DANG Zhilin QIU Shudong HUO Peng ZHAN Huining LIU Yachao ZHANG Jing NING Hong ZHOU Jincheng ZHANG key Lab of Ministry of Education for wide band-gap semiconductor materials and devices School of MicroelectronicsXidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

Microwave power transmission(MPT) could realize the point-to-point long-distance transfer of energy without any wires, which makes it attractive for solar-powered satellites,drones, and implantable medical devices, and has aroused enormous attention [1]. Microwave rectifiers could convert RF(radio frequency) energy into DC(direct current) power,

关键词：

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr3 Solar Cells

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Energy & Environmental materials 2024年第1期7卷 172-179页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao State key Discipline laboratory of wide band gap semiconductor Technology & Shaanxi Joint key laboratory of Graphene School of Microelectronics Xidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou institute of technology Xidian University Qinghai Huanghe Hydropower Development CO. LTD.

Low-temperature,ambient processing of high-quality CsPbBr3films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells（PSCs）.Herein,we demonstrate a crystal orientation engineering strategy of PbBr2precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr3films.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr3 low temperature two-step sequential deposition

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

在线全文

学校读者我要写书评

暂无评论

Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao key laboratory of Advanced semiconductor devices and materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State key Discipline laboratory of wide band gap semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Machine learning-assisted smart epitaxy of Ⅲ-V semiconductors

在线全文

学校读者我要写书评

暂无评论

Science China materials 2024年

作者： Yue Hao key laboratory of wide band gap semiconductor Technology School of Microelectronics Xidian University

semiconductor epitaxial growth is the front-end process for manufacturing microelectronic and optoelectronic *** beam epitaxy（MBE）, capable of precisely controlling atomic layer deposition, has emerged as a crucial technique in chip atomic-level manufacturing[1]. However, in semiconductor epitaxy, the heterogeneous nature of materials is complicated, and the growth condition fluctuations poses significant challenges in defect suppression[2], substantially impacting chip performance and yield.

关键词：

Graded Heterojunction Improves wide-bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao State key Discipline laboratory of wide band gap semiconductor Technology&Shaanxi Joint key laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China materials 2024年第9期67卷 2856-2865页

作者： Jing Sun Zhan Wang Xinyuan Wang Ying Zhou Yanting Wang Yunlong He Yimin Lei Hong Wang Xiaohua Ma School of Advanced materials and Nanotechnology Xidian UniversityXi’an710126China National Engineering Research Center of wide band-gap semiconductor Xidian UniversityXi’an710126China School of Electronic Engineering Xi’an University of Posts&TelecommunicationsXi’an710121China

As a critical command center in organisms,the brain can execute multiple intelligent interactions through neural networks,including memory,learning and ***,memristive-based neuromorphic devices have been widely developed as promising technologies to build artificial synapses and neurons for neural ***,multiple information interactions in artificial intelligence devices potentially pose threats to information ***,a transient form of heterogeneous memristor with a stacked structure of Ag/MgO/SiN_(x)/W is proposed,in which both the reconfigurable resistive switching behavior and volatile threshold switching characteristics could be realized by adjusting the thickness of the SiN_(x)*** underlying resistive switching mechanism of the device was elucidated in terms of filamentary and interfacial *** neural functions,including short-term plasticity(STP),the transformation from STP to long-term plasticity,and integrate-and-fire neuron functions,have been successfully emulated in memristive ***,the dissolution kinetics associated with underlying transient behaviors were explored,and the water-assisted transfer printing technique was exploited to build transient neuromorphic device arrays on the water-dissolvable poly(vinyl alcohol)substrate,which were able to formless disappear in deionized water after 10-s dissolution at room *** transient form of memristive-based neuromorphic device provides an important step toward information security reinforcement for artificial neural network applications.

关键词： memristor physically transient controlled resistive switching behavior information security

Construction of novel P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt heterophotocathode for enhanced photoelectrochemical water splitting

在线全文

学校读者我要写书评

暂无评论

Nano Research 2024年第5期17卷 4428-4436页

作者： Jiaru Li Jiayu Bai Songjie Hu Wenyu Yuan Yuyu Bu Xiaohui Guo key Lab of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education Shaanxi Key Laboratory for Carbon Neutral TechnologyThe College of Chemistry and Materials ScienceNorthwest UniversityXi'an 710069China key Lab of wide band-gap semiconductor materials and devices School of MicroelectronicsXidian UniversityXi’an 710071China key Lab of Macromolecular Science of Shaanxi Province Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationSchool of Chemistry&Chemical EngineeringShaanxi Normal UniversityXi'an 710062China

Photoelectrochemical devices have been developed to enable the conversion of solar ***,their commercial potential is restricted by the limited stability of the materials *** enhance the stability of photocathode and its solar water splitting performance,a P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt composite photocathode is developed in this *** novel TiO_(2)/HfO_(2)/MoS_(2) serial nanostructure provides excellent stability of the photocathode,and optimizes the interface energy barrier to further facilitate the transfer process of photogenerated carriers within the *** best P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt photocathode demonstrates an initial potential of 0.5 V(***)and a photocurrent density of-29 mA/cm^(2) at 0 V(***).Through intensity modulated photocurrent spectroscopy and photoluminescence test,it is known that the enhanced water splitting performance is attributed to the optimized carrier transfer *** findings provide a feasible strategy for the stability and photon quantum efficiency enhancement of silicon-based photocathode devices.

关键词： photoelectrochemical water splitting stability surface/interface engineering HfO_(2)layer

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG Hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO Xiaohua MA Yue HAO School of Advanced materials and Nanotechnology Xidian University State key Discipline laboratory of wide bandgap semiconductor Technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1–3].

关键词： Drain current

单层Ga2O3磁性隧道结中的高居里温度和完美的自旋过滤效应（英文）

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China materials 2024年第10期67卷 3262-3271页

作者：张子涵吉新晨宁静王东郝跃张进成 The State key Discipline laboratory of wide band gap semiconductor Technology Xidian University Shaanxi Joint key laboratory of Graphene Xidian University Xidian-Wuhu Research Institute

本文采用基于密度泛函理论的第一性原理方法研究了单层Ga2O3在Ga空位和O空位存在下的电子结构和磁性.结果表明,VGa的引入会导致单层二维Ga2O3中的非零磁矩,而VO不会.我们发现两种不同对称位置的Ga空位都能导致自旋极化基态.值得注意的是... 详细信息

本文采用基于密度泛函理论的第一性原理方法研究了单层Ga2O3在Ga空位和O空位存在下的电子结构和磁性.结果表明,VGa的引入会导致单层二维Ga2O3中的非零磁矩,而VO不会.我们发现两种不同对称位置的Ga空位都能导致自旋极化基态.值得注意的是,当VGa比大于1/16 （每16个Ga原子1个Ga空位）时,单层2D Ga2O3表现出半金属性质,并且其在费米能级处的自旋极化达到100%.同时,对这两种不同Ga空位体系的计算也表明了潜在的高居里温度（355.8 K）下的长程铁磁有序.最后利用具有高VGaI的单层2D Ga2O3作为铁磁层,可以获得在费米能级处具有超高自旋过滤效应的磁性隧道结.Ga空位Ga2O3/MgO/Ga空位Ga2O3MTJ具有优异的自旋滤波效果（自旋极化100%）和巨大的TMR比（高达1.12×103%）.本文的结果表明,基于具有室温铁磁性的二维Ga2O3的MTJ表现出可靠的性能,显示了在自旋电子学中应用潜在的可能性.

关键词： two-dimensional Ga2O3 spin electronics room temperature ferromagnetism MTJ