检索结果-南通市图书馆

A Fast Two-Tone Active Load-Pull Algorithm for Assessing the Non-linearity of rf Devices

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Journal of Electronics 2022年第1期31卷 25-32页

作者： SU Jiangtao CAI Jialing ZHENG Xing SUN Lingling key laboratory of rf circuits and systems Ministry of Education key laboratory of Large Scale Integrated circuits Design Zhejiang Province

Radio frequency(rf) devices used in modern wireless systems must meet increasingly complicated spectral constraints while still operating with high power efficiency. A fast real-time two-tone active loadpull algorithm is proposed to assess the relationship between nonlinear performance with associated device load impedance variations. This algorithm employs real time measurement data to extract two-tone local nonlinear behaviour model, which is further used for the prediction of injected signal value in the active real-time loadpull system, therefore minimizing the number of iterations required for load emulation. The proposed method was validated on a real two-tone load-pull measurement bench using off-the-shelf instruments. The result shows that the measurement speed has been greatly increased without sacrifice of the impedance emulation *** intelligent two-tone load-pull algorithm is expected to be applied in the designing of modern communication system and radar transmitters, as well as the validation of the models of radio frequency transistors.

关键词： measurement speed real-time load-pull system spectral constraints radio frequency transistors real time measurement data intelligent two-tone load-pull algorithm two-tone local nonlinear behaviour model radio frequency devices impedance emulation accuracy modern communication system modern wireless systems nonlinearity radiocommunication rf devices associated device load impedance variations radar transmitters injected signal value two-tone load-pull measurement bench load emulation high power efficiency fast real-time two-tone active load-pull algorithm nonlinear performance

Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第5期31卷 126-132页

作者：邹欢欢孙玲玲文进才刘军 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor *** elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable *** a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable *** two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（Srf） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M rf CMOS technology.

关键词： rf-CMOS on-chip spiral inductor scalable model 1-π 2-π

rf CMOS modeling:a scalable model of rf-MOSFET with different numbers of fingers

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第11期31卷 33-37页

作者：余裕宁孙玲玲刘军 key laboratory of rf circuits and systems of Ministry of Education Hangzhou Dianzi University

A novel scalable model for multi-finger rf MOSFETs modeling is *** the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the *** model is further verified using a standard 0.13μm rf CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μ*** agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.

关键词： rf-MOSFETs scalable model parasitic components layout-based

rf CMOS modeling:a novel empirical large-signal model for an rf-MOSFET

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第4期31卷 52-56页

作者：孙玲玲吕彬义刘军陈磊 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

A novel empirical model for large-signal modeling of an rf-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm rf CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.

关键词： rf-MOSFET large-signal model self heating

A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2014年第3期35卷 70-78页

作者：刘军余志平孙玲玲 key laboratory of rf circuits and systems Ministry of Education Hangzhou Dianzi University

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,***-order derivatives of I–V /C–V remain continuous, making the model suitable for rf large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.

关键词： surface-potential based compound semiconductor HEMTs large-signal model

A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2012年第7期33卷 85-88页

作者：高海军孙玲玲邝小飞楼立恒 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A two dimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz @ 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz.

关键词： ring oscillator switched capacitor array phase noise MOM-capacitor standard CMOS

Pulse swallowing frequency divider with low power and compact structure

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2012年第11期33卷 79-82页

作者：高海军孙玲玲蔡超波詹海挺 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

A pulse swallowing frequency divider with low power and compact structure is *** of the DFFs in the divided by 2/3 prescaier is controlled by the modulus control signal,and automatically powered off when it has no contribution to the operation of the *** DFFs in the program counter and the swallow counter are shared to compose a compact structure,which reduces the power consumption *** proposed multi-modulus frequency divider was implemented in a standard 65 nm CMOS process with an area of 28×22μm;.The power consumption of the divider is 0.6 mW under 1.2 V supply voltage when operating at 988 MHz.

关键词： frequency divider low power prescaler multi-modulus CMOS

A novel compact model for on-chip stacked transformers in rf-CMOS technology

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2013年第8期34卷 70-73页

作者：刘军文进才赵倩孙玲玲 key laboratory for rf circuits and systems of Ministry of Education Hangzhou Dianzi University

A novel compact model for on-chip stacked transformers is *** proposed model topology gives a clear distinction to the eddy current,resistive and capacitive losses of the primary and secondary coils in the substrate.A method to analytically determine the non-ideal parasitics between the primary coil and substrate is *** model is further verified by the excellent match between the measured and simulated S-parameters on the extracted parameters for a 1：1 stacked transformer manufactured in a commercial rf-CMOS technology.

关键词： on-chip stacked transformer compact model

A flux-controlled model of meminductor and its application in chaotic oscillator

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2016年第9期25卷 235-250页

作者：王光义靳培培王晓炜沈怡然袁方王晓媛 key laboratory of rf circuits and systems (Ministry of Education) Institute of Modern Circuits and Intelligent InformationHangzhou Dianzi University Department of Automation Shanghai University

A meminductor is a new type of memory device developed from the *** present a mathematical model of a flux-controlled meminductor and its equivalent circuit model for exploring the properties of the meminductor in a nonlinear *** explore the response characteristics of the meminductor under the exciting signals of sinusoidal,square,and triangular waves by using theoretical analysis and experimental tests,and design a meminductor-based oscillator based on the *** analysis and experiments show that the meminductor-based oscillator possesses complex bifurcation behaviors and can generate periodic and chaotic oscillations.A special phenomenon called the co-existent oscillation that can generate multiple oscillations（such as chaotic,periodic oscillations as well as stable equilibrium） with the same parameters and different initial conditions *** also design an analog circuit to realize the meminductor-based oscillator,and the circuit experiment results are in accordance with the theory analysis.

关键词： meminductor oscillator chaos co-existent attractor