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Two-dimensional materials for future information technology: status and prospects

Science China(information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of hunan province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State key Discipline laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University key laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State key laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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Application of phase‑conjugate beams in beam correction and underwater optical wireless communication subject to surface wave turbulence

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Frontiers of Optoelectronics 2022年第3期15卷 87-96页

作者： Qi Li Xiuhua Yuan Feng Zhou Zeyu Zhou Wujie Liu School of optical and Electronic information Huazhong University of Science and TechnologyWuhan 430074China key laboratory of hunan province on information photonics and freespace optical communications School of Information Science and EngineeringHunan Institute of Science and TechnologyYueyang 414006China

Water surface wave turbulence is one of the factors afecting the performances of underwater optical wireless communication(UOWC)systems.In our research,a phase-conjugate beam was used to correct the beam distortion and enhance the communication performances when a system is subject to surface wave turbulence.The phase-conjugate beam was generated by a phase-conjugate mirror(PCM),and a turbulence generator was used to generate surface wave turbulence in the experiment.We calculated the beam centroid distribution and the results showed that the phase-conjugate beam had a better propagation performance than the distorted beam at the diferent water depths.The root mean square(RMS)of the beam centroid for the phase-conjugate beam was 11 times less than that for the distorted beam,which meant that the phase-conjugate beam could efectively correct the beam drift.We further investigated the scintillation index and the signal-to-noise ratio(SNR);the results showed that the phase-conjugate beam was able to reduce the scintillation and an obvious improvement in SNR could be obtained.This research has the potential to be applied in UWC.

关键词： Phase-conjugate beam Underwater optical wireless communication(UOWC) Degenerate four-wave mixing(DFWM) Surface wave turbulence

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Goos–H?nchen and Imbert–Fedorov shifts in tilted Weyl semimetals

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Chinese Physics B 2022年第7期31卷 272-283页

作者：刘硕卿宋益飞万婷柯友刚罗朝明 key laboratory of hunan province on information photonics and freespace optical communications School of Information Science and EngineeringHunan Institute of Science and TechnologyYueyang 414006China School of Physics and Chemistry Hunan First Normal UniversityChangsha 410205China

We establish the beam models of Goos–H?nchen(GH)and Imbert–Fedorov(IF)effects in tilted Weyl semimetals(WSMs),and systematically study the influences of Weyl cone tilting and chemical potential on the GH and IF shifts at a certain photon energy 1.96 eV.It is found that the GH and IF shifts in tilted type-Ⅰand type-ⅡWSMs are both almost symmetric about the Weyl cone tilting.Meanwhile,the GH and IF shifts in type-I WSMs almost do not change with the tilt degree of Weyl cones,while those in type-ⅡWSMs are extremely dependent on tilt degree.These trends are mainly due to the nearly symmetric distribution of WSMs conductivities,where the conductivities keep stable in type-I WSMs and gradually decrease with tilt degree in type-II WSMs.By adjusting the chemical potential,the boundary between type-I and type-II WSMs widens,and the dependence of the beam shifts on the tilt degree can be manipulated.Furthermore,by extending the relevant discussions to a wider frequency band,the peak fluctuation of GH shifts and the decrease of IF shifts occur gradually as the frequency increases,and the performance of beam shifts at photon energy 1.96 eV is equally suitable for other photon frequencies.The above findings provide a new reference for revisiting the beam shifts in tilted WSMs and determining the types of WSMs.

关键词： Goos–Hanchen shift Imbert–Fedorov shift Weyl cone tilting chemical potential

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Comparison of formation and evolution of radiation-induced defects in pure Ni and Ni-Co-Fe medium-entropy alloy

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Chinese Physics B 2022年第12期31卷 365-373页

作者：稂林邓辉球陶家友杨腾飞林也平胡望宇 key laboratory of hunan province on information photonics and freespace optical communications School of Physics and Electrical SciencesHunan Institute of Science and TechnologyYueyang 414006China School of Physics and Electronics Hunan UniversityChangsha 410082China College of Materials Science and Engineering Hunan UniversityChangsha 410082China

High-entropy alloys(HEAs)and medium-entropy alloys(MEAs)have attracted a great deal of attention for developing nuclear materials because of their excellent irradiation tolerance.Herein,formation and evolution of radiation-induced defects in Ni Co Fe MEA and pure Ni are investigated and compared using molecular dynamics simulation.It is observed that the defect recombination rate of ternary Ni Co Fe MEA is higher than that of pure Ni,which is mainly because,in the process of cascade collision,the energy dissipated through atom displacement decreases with increasing the chemical disorder.Consequently,the heat peak phase lasts longer,and the recombination time of the radiation defects(interstitial atoms and vacancies)is likewise longer,with fewer deleterious defects.Moreover,by studying the formation and evolution of dislocation loops in Ni-Co-Fe alloys and Ni,it is found that the stacking fault energy in Ni-Co-Fe decreases as the elemental composition increases,facilitating the formation of ideal stacking fault tetrahedron structures.Hence,these findings shed new light on studying the formation and evolution of radiation-induced defects in MEAs.

关键词： medium-entropy alloy molecular dynamics simulations radiation-induced defects stacking fault energy

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Controllable photonic spin Hall effect with phase function construction

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photonics Research 2020年第6期8卷 963-971页

作者： YANLIANG HE ZHIQIANG XIE BO YANG XUEYU CHEN JUNMIN LIU HUAPENG YE XINXING ZHOU YING LI SHUQING CHEN DIANYUAN FAN International Collaborative laboratory of 2D Materials for Optoelectronics Science and Technology and Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong ProvinceInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China College of New Materials and New Energies Shenzhen Technology UniversityShenzhen 518118China Guangdong Provincial key laboratory of optical information Materials and Technology&Institute of Electronic Paper Displays South China Academy of Advanced Optoe/ectronicsSouth China Normal UniversityGuangzhou 510006China Synergetic Innovation Center for Quantum Effects and Applications School of Physics and ElectronicsHunan Norma/UniversityChangsha 410081China

Photonic spin Hall efect(SHE)provides new opportunities for achieving spin-based photonics applications.However,flexibly manipulating the spin-dependent sltting(SDS)of photonic SHE and imposing extra phase modulation on the two spin components are always a challenge.Here,a controllable SHE mechanism based on phase function construction is reported.It is conduded that the phases with specific functional structures performing a coordinate translation are equivalent to integrating a gradient phase to the original phases.Hence,the original phase can be used for independent phase modulation,and the gradient phase originating from the co-ordinate translation is capable of manipulating the SDS.A metasurface with Pancharatnam-Berry phase that can impose conjugate phases to the two spin components of light is fabricated to verify this mechanism.By shifing the light position,the SDS is continuously manipulated in the visible region,which is successfully used for detecting the polarization llipticity.The extra phase modulation is also performed with the original phase and thus enables measuring singular beams.It is anticipated that the controllable SHE manipulation method may open new avenues in the fields of spin photonics,optical sensing,optical communications,etc.

关键词： mechanism. phase function

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