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Calculation of surface acoustic waves in a multilayered piezoelectric structure

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Journal of Semiconductors 2013年第1期34卷 6-11页

作者：张祖伟温志渝胡晶 key laboratory of fundamental science on micro/nano-device and system technology Chongqing University National Center for International Research of micro/nano-system and New Material technology Chongqing University microsystem Research Center Chongqing University

The propagation properties of the surface acoustic waves（SAWs） in a ZnO-SiO2-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic *** phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO2-Si structures are calculated and *** Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the *** order to prove the calculated results,a Love mode SAW device based on the ZnO-SiO2-Si multilayered structure is fabricated by micromachining,and its frequency responses are *** experimental results are found to be mainly consistent with the calculated ones,except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the *** deviation of the experimental results from the calculated ones is reduced by thermal annealing.

关键词： SAW RAM multilayered structure

Development of Raman acousto-optic frequency shifter based on SAW

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Journal of Semiconductors 2014年第8期35卷 104-109页

作者：王春梅温志渝张祖伟张颖异 key laboratory of fundamental science on micro/nano-device and system technology Chongqing University National Center for International Research of micro/nano-system and New Material technology Chongqing University microsystem Research Center of Chongqing University

A Raman acousto-optic frequency shifter （AOFS） based on surface acoustic wave （SAW） is presented. It consists of a double-ended SAW resonator and optical waveguide system. The structure parameters of the SAW resonator are optimized using COM software and the optical waveguide system is designed using an effective index method. The AOFS prototype fabricated using MEMS technology is detected. The optical beat signals su- perimposed by ± 1st-order and ±2nd-order diffracted beams are detected. The frequency shift of 78.2201 MHz related to the 1 st-order diffracted beams and 156.2306 MHz related to the 2nd-order diffracted beams are obtained respectively.

关键词： SAW Raman AOFS frequency shift

The fabrication of vibration energy harvester arrays based on AlN piezoelectric film

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Journal of Semiconductors 2013年第11期34卷 79-82页

作者：尚正国李东玲温志渝赵兴强 key laboratory of fundamental science on micro/nano-device and system technology Chongqing University National Center for International Research of micro/nano-system and New Material technology Chongqing University microsystem Research Center of Chongqing University

： The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride （AlN） film are presented. The structure design and fabrication process of the device are introduced. The key material, the AIN film with crystal orientation （002）, was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction （XRD）. The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g （g is standard gravity acceleration） is applied. key words： A1N; crystal orientation; harvester arrays; vibration energy

关键词： AlN crystal orientation harvester arrays vibration energy

Low temperature Si/Si wafer direct bonding using a plasma activated method

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Journal of Zhejiang University-science C(Computers and Electronics) 2013年第4期14卷 244-251页

作者： Dong-ling LI Zheng-guo SHANG Sheng-qiang WANG Zhi-yu WEN National key laboratory of fundamental science of Novel micro/nano device and system technology Chongqing University MOE key laboratory of Optoelectronic technology & systems Chongqing University microsystem Research Center Chongqing University

Manufacturing and integration of micro-electro-mechanical systems （MEMS） devices and integrated circuits （ICs） by wafer bonding often generate problems caused by thermal properties of materials. This paper presents a low temperature wafer direct bonding process assisted by 02 plasma. Silicon wafers were treated with wet chemical cleaning and subsequently activated by 02 plasma in the etch element of a sputtering system. Then, two wafers were brought into contact in the bonder followed by annealing in N2 atmosphere for several hours. An infrared imaging system was used to detect bonding defects and a razor blade test was carried out to determine surface energy. The bonding yield reaches 90%--95% and the achieved surface energy is 1.76 J/m2 when the bonded wafers are annealed at 350 ~C in N2 atmosphere for 2 h. Void formation was systematically observed and eli-mination methods were proposed. The size and density of voids greatly depend on the annealing temperature. Short O2 plasma treatment for 60 s can alleviate void formation and enhance surface energy. A pulling test reveals that the bonding strength is more than 11.0 MPa. This low temperature wafer direct bonding process provides an efficient and reliable method for 3D integration, system on chip, and MEMS packaging.

关键词： Low temperature Wafer direct bonding O2 plasma activation Surface energy Void formation

Dynamic Regulation of Hydrogen Bonding Networks and Solvation Structures for Synergistic Solar‑Thermal Desalination of Seawater and Catalytic Degradation of Organic Pollutants

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nano-micro Letters 2025年第2期17卷 548-565页

作者： Ming‑Yuan Yu Jing Wu Guang Yin Fan‑Zhen Jiao Zhong‑Zhen Yu Jin Qu Beijing key laboratory of Advanced Functional Polymer Composites Beijing University of Chemical TechnologyBeijing 100029People’s Republic of China State key laboratory of Organic‑Inorganic Composites College of Materials Science and EngineeringBeijing University of Chemical TechnologyBeijing 100029People’s Republic of China

Although solar steam generation strategy is efficient in desalinating seawater,it is still challenging to achieve continuous solar-thermal desalination of seawater and catalytic degradation of organic ***,dynamic regulations of hydrogen bonding networks and solvation structures are realized by designing an asymmetric bilayer membrane consisting of a bacterial cellulose/carbon nanotube/Co_(2)(OH)_(2)CO_(3)nanorod top layer and a bacterial cellulose/Co_(2)(OH)_(2)CO_(3)nanorod(BCH)bottom ***,the hydrogen bonding networks inside the membrane can be tuned by the rich surface–OH groups of the bacterial cellulose and Co_(2)(OH)_(2)CO_(3)as well as the ions and radicals in situ generated during the catalysis ***,both SO_(4)^(2−)and HSO_(5)−can regulate the solvation structure of Na^(+)and be adsorbed more preferentially on the evaporation surface than Cl^(−),thus hindering the de-solvation of the solvated Na^(+)and subsequent nucleation/growth of ***,the heat generated by the solar-thermal energy conversion can accelerate the reaction kinetics and enhance the catalytic degradation *** work provides a flow-bed water purification system with an asymmetric solar-thermal and catalytic membrane for synergistic solar thermal desalination of seawater/brine and catalytic degradation of organic pollutants.

关键词： Solar steam generation Seawater desalination Catalytic degradation Bacterial cellulose Cobalt hydroxycarbonate nanorods

Templated self-assembly of Au-TiO_2 binary nanoparticles-nanotubes

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Chinese Chemical Letters 2014年第6期25卷 874-878页

作者： Yu-Xin Zhang Xiao-Dong Hao Zeng-Peng Diao College of Materials science and Engineering Chongqing University National key laboratory of fundamental science of micro/nano-devices and system technology Chongqing University

In this work, we developed a templated self-assembly approach to fabricate self-supporting Au/TiO2 binary nanoparticles-nanotubes （NPNTs） for the first time. The stable Au/TiO2 nanoparticles colloids were pre-synthesized and then deposited onto an AAO template, following by a mild calcination process. Au/TiO2 binary NPNTs can be achieved after removing the AAO template by NaOH solution. In addition, Au/TiO2 NPNTs with different thicknesses and size distributions could be achieved by tailoring the process parameters, such as the molar ratio of AuNPs to TiO2NPs, deposition modes and calcinations conditions. Therefore, these findings made controllable formation of Au/TiO2 NPNTs attractive for promising fabrication methodologies of metal/metal oxides NPNTs.

关键词： Au/TiO2 colloids nanoparticies-nanotubes Self-assembly AAO template

Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第4期33卷 51-56页

作者：张祖伟温志渝胡晶 key laboratory of fundamental science on micro/nano-device and system technology Chongqing UniversityChongqing 400030China National Center for International Research of micro/nano-system and New Material technology Chongqing UniversityChongqing 400030China microsystem Research Center of Chongqing University Chongqing 400030China

The design and simulation of a novel microoptoelectromechanical system （MOEMS） accelerometer based on Raman-Nath diffraction are presented. The device is planned to be fabricated by microelectromechanical system technology and has a different sensing principle than the other reported MOEMS accelerometers. The fun- damental theories and principles of the device are discussed in detail, a 3D finite element simulation of the flexural plate wave delay line oscillator is provided, and the operation frequency around 40 MHz is calculated. Finally, a lecture experiment is performed to demonstrate the feasibility of the device. This novel accelerometer is proposed to have the advantages of high sensitivity and anti-radiation, and has great potential for various applications.

关键词： accelerometer MOEMS Raman-Nath diffraction FPW delay line oscillator

Design and process test of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第9期33卷 82-88页

作者：张祖伟温志渝尚正国李东玲胡晶 key laboratory of fundamental science on micro/nano-device and system technology Chongqing UniversityChongqing 400030China National Center for International Research of micro/nano-system and New Material technology Chongqing University Chongqing 400030China microsystem Research Center of Chongqing University Chongqing 400030China

A novel micro-opto-electro-mechanical system （MOEMS） accelerometer based on Raman-Nath diffraction is presented. It mainly consists of an FPW delay line oscillator and optical strip waveguides. The fun- damental theories and principles of the device are introduced briefly. A flexural plate-wave delay-line oscillator is designed to work as an acousto-optic （AO） shifter, which has a Klein-Cook parameter of 0.38. Single-mode optical strip waveguides of 2 μm in width and thicknesses of 0.6 μm are designed by using the effective index method for light transmission. The E^y00 mode waveguide polarizers are designed to ensure the consistency of the light polarization in the waveguides. The fabrication process, based on （100） oriented, 450-#m-thick silicon wafers is proposed in detail, and some difficulties in the process are discussed carefully. At last, a series of process tests are undertaken to solve the proposed problems. The results indicate that the proposed design and fabrication process of the device is dependable and realizable.

关键词： accelerometer MOEMS Raman-Nath diffraction design process test

Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

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Journal of Semiconductors 2010年第6期31卷 27-33页

作者：何进郑睿张立宁张健林信南陈文新 Department of Electronics and Computer Engineering Hong Kong University of science & technology micro & nano Electric device and Integrated technology Group Key Laboratory of Integrated MicrosystemsPeking UniversityShenzhen Graduate School micro & nano Electric device and Integrated technology Group key laboratory of Integrated microsystems Peking UniversityShenzhen Graduate School

A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion *** original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and *** these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

关键词： non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue