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Flexible Graphene Field‑Effect Transistors and Their Application in Flexible Biomedical Sensing

Nano-Micro Letters 2025年第2期17卷 252-313页

作者： Mingyuan Sun Shuai Wang Yanbo Liang Chao Wang Yunhong Zhang Hong Liu Yu Zhang Lin Han Institute of Marine Science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China State key laboratory of crystal materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China School of Integrated Circuits Shandong UniversityJinan 250100ShandongPeople’s Republic of China shandong Engineering Research Center of Biomarker and Artificial Intelligence Application Jinan250100ShandongPeople’s Republic of China

Flexible electronics are transforming our lives by making daily activities more *** to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and ***,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and *** combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical ***,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning *** ability of FGFETs to sense strains and biomolecular charges opens up diverse application *** specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical ***,we discuss the current challenges and prospects of FGFETs and their applications in biomedical *** review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.

关键词： Flexible Graphene Field-effect transistor Wearable Implantable Biosensor

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Passively Q-switched self-frequency doubling Nd3+:ReCa4O（BO3）3（Re=Y,Gd） lasers with tin diselenide as a saturable absorber

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Chinese Optics Letters 2019年第6期17卷 45-48页

作者： Yuxiang Sun Mengxia Wang Xinle Wang Ying Zhou Bo Wang Zhengping Wang Fapeng Yu Xinguang Xu State key laboratory of crystal materials Shandong UniversityJinan 250100China key laboratory of functional crystal materials and device (shandong university) Ministry of EducationJinan 250100China

With tin diselenide(SnSe2)film as a saturable absorber(SA),the passively Q-switched self-frequency doubling(SFD)lasers were realized in Nd^3+:ReCa4O(BO3)3(Re=Y,Gd)*** Nd:YCa4O(BO3)3 crystal,the maximum average output power at 532 nm was 19.6 mW,and the corresponding pulse repetition frequency,pulse duration,single pulse energy,and peak power were 17.6 kHz,91.9 ns,1.1μJ,and 12.1 W,*** Nd:GdCa4 O(BO3)3 crystal,these values were 14.5 mW,22.1 kHz,48.7 ns,0.66μJ,and 13.5 W.

关键词： With tin diselenide the passively Q-switched ,0.66μJ,and 13.5 W.

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A review of β-Ga_2O_3 single crystal defects, their effects on device performance and their formation mechanism

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Journal of Semiconductors 2019年第1期40卷 45-55页

作者： Bo Fu Zhitai Jia Wenxiang Mu Yanru Yin Jian Zhang Xutang Tao State key laboratory of crystal materials & key laboratory of functional crystal materials and device Shandong University

As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.

关键词： β-Ga2O3 crystal defects device performance formation mechanism

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Raman gains of ADP and KDP crystals

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Chinese Physics B 2015年第4期24卷 227-230页

作者：周海亮张清华王波许心光王正平孙洵张芳张立松刘宝安柴向旭 State key laboratory of crystal materials Shandong University key laboratory of functional crystal materials and device (shandong university) Ministry of Education College of Information Science and Engineering Shandong Agricultural University Chengdu Fine Optical Engineering Research Centre

In this paper, the Raman gain coefficients of ammonium dihydrogen phosphate （ADP） and potassium dihydrogen phosphate （KDP） crystals are measured. By using a pump source of a 30-ps, 532-nm laser, the gain coefficients of ADP and KDP are 1.22 cm/GW, and 0.91 cm/GW, respectively. While for a 20-ps, 355-nm pump laser, the gain coefficients of these two crystals are similar, which are 1.95 cm/GW for ADP and 1.86 for KDP. The present results indicate that for ultra-violet frequency conversion, the problem of stimulated Raman scattering for ADP crystal will not be more serious than that for KDP crystal. Considering other advantages such the larger nonlinear optical coefficient, higher laser damage threshold, and lower noncritical phase-matching temperature, it can be anticipated that ADP will be a powerful competitor to KDP in large aperture, high energy third-harmonic generation or fourth-harmonic generation applications.

关键词： ADP KDP stimulated Raman scattering gain coefficient

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Electrical Conduction in Deuterated Ammonium Dihydrogen Phosphate crystals with Different Degrees of Deuteration

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Chinese Physics Letters 2015年第5期32卷 107-110页

作者：朱丽丽甘笑雨张清华刘宝安徐明霞张立松许心光顾庆天孙洵 State key laboratory of crystal materials Shandong University Jinan 250100 key laboratory of functional crystal materials and device of Ministry of Education Shandong University Jinan 250100 Chengdu Fine Optical Engineering Research Centre Chengdu 610041

Conductivity measurements of deuterated ammonium dihydrogen phosphate （DADP） crystals with different deuterated degrees are described. The conductivities increase with the deuterium content, and the value of the a-direction is larger than that of the e-direction. Compared with DKDP crystals, DADP crystals have larger conductivities, which is partly due to the existence of A defects. The ac conductivity over the temperature range 25-170℃has shown a knee in the curve ofln（σT） versus T-1. The conductivity activation energy calculated by the slope of the high temperature region decreases with the deuterium content. The previously reported phase transition is not seen.

关键词： Electrical Conduction in Deuterated Ammonium Dihydrogen Phosphate crystals with Different Degrees of Deuteration ADP

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Cascaded third-harmonic-generation converter based on a single ADP crystal

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Chinese Physics B 2017年第8期26卷 181-184页

作者：亓宏伟孙玉祥王正平张栩朝于法鹏孙洵许心光赵显 State key laboratory of crystal materials shandong university Jinan 250100 China key laboratory of functional crystal materials and devices(shandong university) Ministry of EducationJinan 250100China

Based on a specially designed optical structure, an efficient cascaded third-harmonic-generation（THG） output of a 1064-nm, pico-seconds pulse laser is successively realized by using an NH_4H_2PO_4（ADP） crystal that acts as the secondharmonic-generation component and sum-frequency-generation component. The maximum THG output is 1.61 mJ, and the highest conversion efficiency from 1064 nm to 355 nm reaches 35%, which are obviously superior to the results obtained using a KDP crystal under the same circumstance. The further phase-matching analysis indicates that this THG configuration of ADP crystal can be applied to various fundamental wavelengths in a range of 1 μm–1.1 μm. Compared with the previously reported KDP THG converter, which is based on a similar principle, the present ADP THG converter is favorable for large-energy, high-efficiency operation because of the larger effective nonlinear optical coefficient deffand higher laser damage threshold.

关键词： third-harmonic-generation ADP crystal polarization ultraviolet laser

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Researches on the Growth Habit and Optical Properties of Fe^(3+) Ion Doped KDP crystal

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Chinese Journal of Structural Chemistry 2007年第10期26卷 1211-1217页

作者：王波房昌水王圣来孙洵顾庆天许心光李毅平 State key laboratory of crystal materials Institute of Crystal MaterialsShandong University

During the process of KDP crystal growth, metal ions strongly affect the growth habit and optical properties of KDP single crystal. In this paper, KDP crystals were grown from an aqueous solution doped with different concentration of Fe^3＋ dopant by traditional temperaturereduction method and ＂point-seed＂ rapid growth method. Furthermore, we examined the light scatter and measured the transmission of these KDP crystals. It is found that the dopant of Fe^3＋ ion can improve the stability of the KDP growth solution when its concentration is less than 30 ppm. The effects of Fe^3＋ ion on the growth habit and optical properties of KDP crystal are also obvious.

关键词： Fe^3+ ion 10P single crystal optical property light scatter

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β-BaB_(2)O_(4) with special cut-angle applied to single crystal cascaded third-harmonic generation

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Chinese Physics B 2018年第11期27卷 477-480页

作者： Hong-Kai Ren Hong-Wei Qi Zheng-Ping Wang Zhi-Xin Wu Meng-Xia Wang Yu-Xiang Sun Xun Sun Xin-Guang Xu State key laboratory of crystal materials Shandong UniversityJinan 250100China key laboratory of functional crystal materials and device(shandong university) Ministry of EducationJinan 250100China School of Chemistry and Chemical Engineering Linyi UniversityLinyi 276000China

High-efficiency single crystal cascaded third-harmonic generation(THG)was realized inβ-BaB_(2)O_(4)(BBO)material with special *** analyzing effective nonlinear optical coefficient(d_(eff))of the cascaded THG process,which was composed by type-II frequency doubling and type-I sum-frequency,the optimum phase matching(PM)direction in BBO crystal was determined to be(θ=32.1°,φ=11°).With an optimized 9-mm long sample which was processed along this direction,the highest cascaded THG conversion efficiency reached 42.3%,which is much superior to the similar components reported previously,including ADP,KDP,and Gd_(x)Y_(1-x)COB crystals.

关键词： polarization frequency conversion β-BaB_(2)O_(4)crystal nonlinear optical crystals optical fre-quency converters

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Investigation on Raman spectra and thermal properties of LuVO_4 and Nd:LuVO_4 crystals

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Journal of Rare Earths 2011年第3期29卷 207-212页

作者：徐民于浩海张怀金许心光王继扬 State key laboratory of crystal materials Shandong University

Lattice vibration modes of LuVO4 and Nd：LuVO4 crystals were calculated by using space group theory,and polarized Raman spectra were recorded with four different geometrical scattering configurations at room temperature to test the theoretical prediction and assign the normal vibrations of these *** measured specific heats at 293.15 K were 0.368,0.378 and 0.363 J/（g·K） for LuVO4,2 at.% and 3 at.% Nd：LuVO4,*** thermal diffusivities of Nd：LuVO4 crystals were obtained in the temperature range of 303.15-563.15 *** calculated thermal conductivity was 5.149（4.579） W/（m·K） along the [001]（[100]） direction for 2 at.% Nd：LuVO4 at 303.15 K,and 5.059（4.225） W/（m·K） for 3 at.% Nd：LuVO4.

关键词： lattice vibration Raman spectrum thermal analysis rare earths

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Growth Defects in Cubic KTa_(1-x)Nb_xO_3 crystal

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Chinese Journal of Structural Chemistry 2008年第3期27卷 261-266页

作者：王旭平王继扬吴剑于永贵张怀金 State key laboratory of crystal materials Shandong University

Potassium tantalate niobate （KTa1-xNbxO3, KTN） crystals with different dimensions and quality situations were grown by Czochralski method. crystal growth process and morphology properties of KTN are presented in this paper. It was found that some defects, such as bubble, inclusion, crack, dislocation etc., can all appear if the crystal is grown in an improper condition. The character and formation mechanism of such defects in macro growth are discussed. We consider that the CO2, which was not released absolutely during the sintering process and dissolved in the melt, led to bubbles. The composition of the inclusion caused by high pulling and rotation rates is KTN polycrystalline. The crack and dislocation in KTN crystal mainly come from improper temperature field. Etching and high-resolution X-ray diffraction （HRXRD） experiment results indicate that the central area is the defects concentrated.

关键词： potassium tantalate niobate (KTa1-xNbxO3 KTN) crystal growth czochralskimethod HRXRD growth defect etching

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