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Science China(Information Sciences) 2024年第8期67卷 347-348页

作者： Shubin LIU Chenxi HAN Xiaoteng ZHAO Yuhao ZHANG Shixin LI Hongzhi LIANG Lihong YANG Zhangming ZHU key laboratory of Analog Integrated circuits and systems (Ministry of Education) School of Integrated CircuitsXidian University

With the growing demand for communication bandwidth,transmitters(TXs) are operating at higher rates, compressing the timing margin for the last 4:1 or 2:1 multiplexer(MUX). To alleviate the timing constraints, the retimer is introduced before the last-stage MUX. However, owing to process, voltage, and temperature(PVT) variations, the phase relationship between the retiming clock and the input data is uncertain, leading to insufficient setup and hold time for the successive retimer.

关键词： CMOS integrated circuits

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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing

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Science China(Information Sciences) 2024年第5期67卷 287-294页

作者： Yaotian LING Zongwei WANG Yuhang YANG Lin BAO Shengyu BAO Qishen WANG Yimao CAI Ru HUANG School of Integrated circuits Beijing Advanced Innovation Center for Integrated Circuits Peking University State key laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications

In-memory computing(IMC), leveraging emerging memories, holds significant promise in overcoming memory limitations and improving energy efficiency. However, the prevailing IMC array structure based on serially connected transistors and memory cells(1T1R/2T2R), along with the signed weight mapping scheme, can lead to asymmetrical weight sensing issues(AWS) due to electrical asymmetry within the1T1R/2T2R structure, particularly in highly scaled cells where the transistor's resistance becomes significant. In this paper, we propose and fabricate an electrically symmetric memory cell based on a physically isolated 2T2R structure for IMC. This design aims to enhance the precision and density of RRAM-based IMC arrays. The 2T2R cells are manufactured using the back-end-of-line(BEOL) process of a commercial40 nm technology platform. The feasibility of this design is verified through measured and simulated results,showcasing its capability to address the issue of AWS. Compared to conventional 2T2R cells, this design achieves a considerably smaller transistor footprint without compromising accuracy, while also improving integration density by 42.2%. These innovative memory cell advancements have the potential to further advance high-energy-efficient IMC technology.

关键词： RRAM 2T2R multi-level storage weight asymmetry in-memory computing

Polymer: Non-fullerene acceptor heterojunction-based phototransistor for short-wave infrared photodetection

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Nano Research 2024年第4期17卷 3087-3095页

作者： Jing Li Weigang Zhu Yang Han Yanhou Geng Wenping Hu key laboratory of Organic Integrated circuits of Ministry of Education&key laboratory of Molecular Optoelectronic Sciences School of Science&Collaborative Innovation Center of Chemical Science and Engineering(Tianjin)Tianjin UniversityTianjin 300072China key laboratory of Organic Integrated circuits of Ministry of Education&key laboratory of Molecular Optoelectronic Sciences School of Materials Science and EngineeringTianjin UniversityTianjin 300072China

It remains full of challenge for extending short-wave infrared(SWIR)spectral response and weak-light detection in the context of broad spectral responses for *** this work,a novel poly(2,5-bis(4-hexyldodecyl)-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thiophene)(PDPPT3-HDO):COTIC-4F organic bulk-heterojunction is prepared as active layer for bulk heterojunction ***3-HDO serves as a hole transport material,while COTIC-4F enhances the absorption of SWIR light to 1020 *** a result,smooth and connected PDPPT3-HDO film is fabricated by blade coating method and exhibits high hole mobility up to 2.34 cm^(2)·V^(-1)·s^(-1) with a current on/off ratio of 4.72×10^(5) in organic thin film ***3-HDO:COTIC-4F heterojunction phototransistors exhibit high responsivity of 2680 A·W^(-1) to 900 nm and 815 A·W^(-1) to 1020 nm,with fast response time(rise time~20 ms and fall time~100 ms).The photosensitivity of the heterojunction phototransistor improves as the mass ratio of non-fullerene acceptors increases,resulting in an approximately two orders of magnitude enhancement compared to the bare polymer ***,the phototransistor exhibits decent responsivity even under ultra-weak light power of 43μW·cm^(-2) to 1020 *** work represents a highly effective and general strategy for fabricating efficient and sensitive SWIR light photodetectors.

关键词： photodetection phototransistor organic semiconductor heterojunction non-fullerene acceptor

An epidermal electrode based triboelectric walking energy harvester for wearable wireless sensing applications

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Science China(Technological Sciences) 2024年第3期67卷 949-957页

作者： CHANG ShiYuan LIU FuHai CHEN JinKai XIA LianBin ZHOU Hao JIANG JingYang DONG Kang ZHANG ChenHao WU Yun CHEN Jin XUAN Weipeng SUN LingLing JIN Hao DONG ShuRong LUO JiKui Ministry of Education key laboratory of rf circuits and systems Hangzhou Dianzi UniversityHangzhou 310018China Special Equipment College Hangzhou Vocational&Technical CollegeHangzhou 310018China College of Information Science and Electronic Engineering Zhejiang UniversityHangzhou 330027China ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang UniversityHangzhou 311200China

Harvesting bio-kinetic energy using a triboelectric nanogenerator(TENG) is one of the promising routes to solve the sustainable energy supply problem for wearable electronics. However, additional materials, complex fabricating processes or specific mechanical structures are needed for existing TENGs to harvest bio-kinetic energy. Besides, they need to be tightly attached to the human body, which may result in detachment and malfunction under tense human motion. Herein, an intrinsic epidermal electrode-based TENG(E-TENG) is proposed to harvest human walking energy. The wearing shoes and ground are used as tribo-materials, and the human epidermis is used as the back electrode of the E-TENG. Compared with the traditional TENGs,the E-TENG does not need any additional tribo-materials and complex mechanical structures. Under optimal conditions, the voltage output of E-TENG can reach 914 V. E-TENG has been used as a self-powered warning sensor and pedometer sensor for demonstration. Furthermore, E-TENG based self-powered wireless sensor system has been developed using a newly designed micro energy electronic switch(MEES). Ambient ultraviolet intensity, temperature and humidity information can be monitored and then transmitted to mobile phone every 3.5 min, demonstrating great potential for widespread wearable applications.

关键词： triboelectric nanogenerator wearable wireless sensing self-powered

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Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network

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Science China(Information Sciences) 2024年第2期67卷 291-301页

作者： Lindong WU Zongwei WANG Lin BAO Linbo SHAN Zhizhen YU Yunfan YANG Shuangjie ZHANG Guandong BAI Cuimei WANG John ROBERTSON Yuan WANG Yimao CAI Ru HUANG School of Integrated circuits Peking University Beijing Advanced Innovation Center for Integrated circuits State key laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Department of Engineering University of Cambridge

Mott devices, featuring low hardware cost and high energy efficiency, have been demonstrated as a key oscillatory element in artificial neurons to enable spiking neural networks(SNNs) such as conversionbased SNNs(CSNNs). However, there will be inevitably non-ideal fluctuation in the oscillation behavior,causing the accuracy degradation of networks. In this paper, we investigate the Mott neuronal oscillation fluctuation(NOF) through experiments and modeling. The results show that the NOF phenomenon conforms to Gaussian distribution and originates from thermal fluctuation induced switching voltage variations. We construct a two-layer CSNN for image recognition tasks to study the NOF effect and propose the activation function boundary(AFB) method to strengthen the stability of the network. The results indicate that AFB can improve the accuracy of CSNN by up to 15.5% by tightening output distribution.

关键词： Mott neuron oscillation fluctuation variation-aware Mott neuronal model conversion-based spiking neural network activation function boundary

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing key Lab of Nanophotonics and Ultrafine Optoelectronic systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

Visualizing the crystallization of sodium chloride under supersaturated condition

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Nano Research 2024年第8期17卷 7786-7792页

作者： Mao Ye Tao Xu Yuwei Xiong Yatong Zhu Mingrui Zhou Longxiang Han Jinyi Sun Ming Qin Litao Sun SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationSchool of Integrated CircuitsSoutheast UniversityNanjing 210096China

Crystallization in supersaturated solution plays a fundamental role in a variety of natural and industrial ***,a thorough understanding of crystallization phenomena in supersaturated solution is still difficult because the real-time visualization of crystallization processes under supersaturated condition is a great ***,an electron beam-induced crystallization method was carried out in in situ liquid cell transmission electron microscopy(TEM)to visualize the crystallization of NaCl under supersaturated condition in real *** steps and behaviors in the crystallization of NaCl were captured and clarified,including the growth of NaCl nanocrystals with different morphologies,the formation of initial crystalline seeds from amorphous ion clusters,and the non-equilibrium growth behaviors caused by uneven distribution of precursor *** study provides the real-time visualization of detailed nucleation and growth behaviors in NaCl crystallization and brings an ideal strategy for investigating crystallization phenomena under supersaturated condition.

关键词： crystallization in situ liquid cell transmission electron microscopy(TEM) electron-water interaction sodium chloride

Generalized time-dependent generator coordinate method for induced fission dynamics

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Frontiers of physics 2024年第4期19卷 1-12页

作者： B.Li D.Vretenar T.Nikšić J.Zhao P.W.Zhao J.Meng State key laboratory of Nuclear Physics and Technology School of PhysicsPeking UniversityBeijing 100871China Physics Department Faculty of ScienceUniversity of Zagreb10000 ZagrebCroatia Center for circuits and systems Peng Cheng LaboratoryShenzhen 518055China

The generalized time-dependent generator coordinate method(TD-GCM)is extended to include pairing *** correlated GCM nuclear wave function is expressed in terms of time-dependent generator states and weight *** particle–hole channel of the effective interaction is determined by a Hamiltonian derived from an energy density functional,while pairing is treated dynamically in the standard BCS approximation with time-dependent pairing tensor and single-particle occupation *** the inclusion of pairing correlations,various time-dependent phenomena in open-shell nuclei can be described more *** model is applied to the description of saddle-to-scission dynamics of induced *** generalized TD-GCM charge yields and total kinetic energy distribution for the fission of 240Pu,are compared to those obtained using the standard time-dependent density functional theory(TD-DFT)approach,and with available data.

关键词： nuclear density functional theory generator coordinate method fission dynamics

Angular and planar transport properties of antiferromagnetic V5S8

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Chinese Physics B 2024年第2期33卷 83-88页

作者：吴晓凯王彬吴德桐陈博文弭孟娟王以林沈冰 Center for Neutron Science and Technology and School of Physics Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devicesand Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-Sen University School of Integrated circuits Shandong Technology Center of Nanodevices and Integration State Key Laboratory of Crystal MaterialsShandong University

Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF) V5S8. In this AF system, obvious anomalous Hall effect(AHE) is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM) system. It can persist to the temperatures above AF transition and exhibit strong angular field *** phase diagram reveals various magnetic states by rotating the applied field. By analyzing the anisotropic transport behavior, magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line. The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations. These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin. Our results reveal anisotropic interactions of magnetism and electron in V5S8, suggesting potential opportunities for the AF spintronic sensor and devices.

关键词： antiferromagnetism planar Hall effect magnetic and topological properties

Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG College of Integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021 dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

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