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Competitive assembling strategy to construct carbon nitride homojunctions for boosting photocatalytic performance

Journal of Materials Science & Technology 2024年第5期172卷 23-32页

作者： Hua-Wei Zhang Yuan-Yuan Li Bo Li Jing-Hui Shi Tao Huang Gui-Fang Huang Anlian Pan Wangyu Hu Wei-Qing Huang School of physics&Electronic Engineering Zhengzhou University of Light IndustryZhengzhou 450002China key laboratory for micro/nano optoelectronic devices of ministry of education&hunan provincial key laboratory of low-dimensional structural physics and devices School of Physics and ElectronicsHunan UniversityChangsha 410082China College of Materials Science and Engineering Hunan UniversityChangsha 410082China

Both morphology and composition have a great influence on the properties and functions of materials,however,how to rational modulate both of them to achieve their synergistic effects has been a longstanding expectation.Herein,we demonstrate a competitive assembling strategy for the construction of metal-free graphite carbon nitride(CN)homojunctions in which morphology and composition can be easily controlled simultaneously by only changing the ratio of assembly raw materials.These homojunctions are comprised of porous nanotubular S-doped CN(SCN)grafted with CN nanovesicles,which are derived from thermal polycondensation of melamine-thiocyanuric acid(M-T)/melamine-cyanuric acid(M-C)supramolecular hybrid blocks.This unique architecture and component engineering endows the novel SCN-CN homojunction with abundant active sites,enhanced visible trapping ability,and intimate interface contact.As a result,the synthesized SCN-CN homojunctions demonstrate high photocatalytic activity for hydrogen evolution and pollutant degradation.This developed strategy opens up intriguing opportu-nities for the rational construction of intricate metal-free heterostructures with controllable architecture and interfacial contact for applications in energy-related fields.

关键词： Competitive assembling strategy Supramolecular hybrid blocks Homojunctions Graphite carbon nitride Photocatalytic

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Electron-transporting boron-doped polycyclic aromatic hydrocarbons:Facile synthesis and heteroatom doping positions-modulated optoelectronic properties

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Chinese Chemical Letters 2024年第4期35卷 447-451页

作者： Tingting Huang Zhuanlong Ding Hao Liu Ping-An Chen Longfeng Zhao Yuanyuan Hu Yifan Yao Kun Yang Zebing Zeng key laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Shenzhen Research Institute of hunan University Shenzhen 518000China key laboratory for micro/nano optoelectronic devices of ministry of education and hunan provincial key laboratory of low-dimensional structural physics and devices School of physics and Electronics Hunan UniversityChangsha 410082China

While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge. Herein, by changing the doping positions of heteroatoms in a diindenopyrene skeleton, we report two isomeric boron, sulfur-embedded PAHs, named Anti-B_(2)S_(2) and Syn-B_(2)S_(2), as electron transporting semiconductors. Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties, but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses. With their low-lying frontier molecular orbital levels, n-type characteristics with electron mobilities up to 1.5 × 10^(-3)cm^(2)V^(-1)s^(-1)were achieved in solution-processed organic field-effect transistors. Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.

关键词： Polycyclic aromatic hydrocarbon optoelectronic properties Heteroatom doping n-Type organic semiconductors Structure–property relationship

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Graphene binding on black phosphorus enables high on/off ratios and mobility

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National Science Review 2024年第2期11卷 188-195页

作者： Fanrong Lin Zhonghan Cao Feiping Xiao Jiawei Liu Jiabin Qiao Minmin Xue Zhili Hu Ying Liu Huan Lu Zhuhua Zhang Jens Martin Qingjun Tong Wanlin Guo Yanpeng Liu key laboratory for Intelligent nano Materials and devices of ministry of education State Key Laboratory of Mechanics and Control of Mechanical Structures and Institute for Frontier Science Nanjing University of Aeronautics and Astronautics Centre for Advanced 2D Materials National University of Singapore School of physics and Electronics Hunan University Centre for Quantum physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and MeasurementSchool of PhysicsBeijing Institute of Technology Leibniz Institute für Kristallzüchtung

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >10～3 as well as a mobility of ～8000 cm2V-1s-1at room temperature, meeting the low-power criterion suggested by the International Roadmap for devices and Systems.

关键词： graphene on/offratio mobility black phosphorus reflective interface

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Parameter estimation in n-dimensional massless scalar field

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Chinese physics B 2024年第3期33卷 231-237页

作者：杨颖荆继良 hunan provincial key laboratory of Intelligent Sensors and Advanced Sensor Materials School of Physics and ElectronicsHunan University of Science and TechnologyXiangtan 411201China Department of physics Key Laboratory of Low Dimensional Quantum Structures and Quantum Control of Ministry of Educationand Synergetic Innovation Center for Quantum Effects and ApplicationsHunan Normal UniversityChangsha 410081Chin

Quantum Fisher information(QFI)associated with local metrology has been used to parameter estimation in open quantum systems.In this work,we calculated the QFI for a moving Unruh-DeWitt detector coupled with massless scalar fields in n-dimensional spacetime,and analyzed the behavior of QFI with various parameters,such as the dimension of spacetime,evolution time,and Unruh temperature.We discovered that the QFI of state parameter decreases monotonically from 1 to 0 over time.Additionally,we noted that the QFI for small evolution times is several orders of magnitude higher than the QFI for long evolution times.We also found that the value of QFI decreases at first and then stabilizes as the Unruh temperature increases.It was observed that the QFI depends on initial state parameterθ,and Fθis the maximum forθ=0 orθ=π,Fφis the maximum forθ=π/2.We also obtain that the maximum value of QFI for state parameters varies for different spacetime dimensions with the same evolution time.

关键词： quantum Fisher information parameter estimation open quantum systems

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microscopic growth mechanism and edge states of monolayer 1T'-MoTe2

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Chinese physics B 2024年第4期33卷 474-480页

作者：赵海鹏刘隐杨胜国林陈昉陈明星 Kai Braun 罗心仪李思宇潘安练王笑 key laboratory for micro-nano physics and Technology of hunan Province School of Physics and ElectronicsCollege of Materials Science and Engineering Hunan University key laboratory of low-dimensional Quantum Structures and Quantum Control of ministry of education Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA) Hunan Normal University State key laboratory of Powder Metallurgy Central South University Institute of Physical and Theoretical Chemistry and LISA+ University of Tübingen

Transition metal ditellurides（TMTDs） have versatile physical properties,including non-trivial topology,Weyl semimetal states and unique spin texture.Controlled growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their applications.Here,we demonstrate the epitaxial growth of 1T'-MoTe2on Au（111）and graphitized silicon carbide（Gr/SiC） by molecular beam epitaxy（MBE）.We investigate the morphology of the grown1T'-MoTe2at the atomic level by scanning tunnelling microscopy（STM） and reveal the corresponding microscopic growth mechanism.It is found that the unique ordered Te structures preferentially deposited on Au（111） regulate the growth of monolayer single crystal 1T'-MoTe2,while the Mo clusters were preferentially deposited on the Gr/SiC substrate,which impedes the ordered growth of monolayer MoTe2.We confirm that the size of single crystal 1T'-MoTe2grown on Au（111）is nearly two orders of magnitude larger than that on Gr/SiC.By scanning tunnelling spectroscopy（STS）,we observe that the STS spectrum of the monolayer 1T'-MoTe2nano-island at the edge is different from that at the interior,which exhibits enhanced conductivity.

关键词： 1T′-MoTe2 microscopic growth mechanism scanning tunneling microscopy/spectroscopy (STM/S) transition metal ditellurides

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High performance and stable pure-blue quasi-2D perovskite light-emitting diodes by multifunctional zwitterionic passivation engineering

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Advanced Photonics 2024年第2期6卷 32-40页

作者： Chao Shen Shuyan Fang Jibin Zhang Xiangfei Liang Chenhui Su Jian Qing Wanzhu Cai Yunhan Luo Renqiang Yang Lintao Hou Jinan University College of Physics and Optical EngineeringGuangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsGuangzhou Key Laboratory of Vacuum Coating Technologies and New Energy MaterialsGuangzhouChina Jinan University College of Physics and Optical EngineeringGuangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsGuangzhouChina Zhengzhou University School of Physics and MicroelectronicsKey Laboratory of Materials Physics of Ministry of EducationZhengzhouChina Jinan University Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education InstitutesGuangzhouChina Jianghan University School of Optoelectronic Materials and TechnologyKey Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of EducationWuhanChina

Despite the rapid advances of red and green perovskite light-emitting diodes(Pe LEDs),achieving high brightness with high external quantum efficiency(EQE)remains a challenge for the pure-blue Pe LEDs,which greatly hinders their practical applications,such as white-light illumination and in optical communication as a high-speed and low-loss light source.Herein,we report a high-performance pure-blue Pe LED based on mixed-halide quasi-2D perovskites incorporated with a zwitterionic molecule of 3-(benzyldimethylammonio)propanesulfonate(3-BAS).Experimental and density functional theory analysis reveals that 3-BAS can simultaneously eliminate non-radiative recombination loss,suppress halide migration,and regulate phase distribution for smoothing energy transfer in the mixed-halide quasi-2D perovskites,leading to the final perovskites with high photoluminescence quantum yield and robust spectrum stability.Thus,the highperformance pure-blue Pe LED with a recorded brightness with 1806 cd m-2and a relative higher EQE of 9.25%is achieved,which is successfully demonstrated in a visible light communication system for voice signal transmission.We pave the way for achieving highly efficient pure-blue Pe LEDs with great application potential in future optical communication networks.

关键词： pure-blue PeLEDs quasi-2D perovskite zwitterionic additive visible light communication

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Enhanced potassium storage of carbon nanofibers as binderfree anodes enabled by coupling ultra-small amorphous Sb_(2)O_(3),graphene modification and sulfur doping

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Rare Metals 2024年第1期43卷 51-64页

作者： Zhao Huang Yu-Kang Lou Lin Peng Yuan Peng Meng-Meng Wang Ming Zhang College of Railway Transportation Hunan University of TechnologyZhuzhou 412007China College of Semiconductors(College of Integrated Circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan UniversityChangsha 410082China key laboratory for micro-nano optoelectronic devices of ministry of education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

Considering the intrinsic advantages of natural copiousness and cost-effectiveness of potassium resource,potassium-ion batteries(KIBs) are booming as prospective alternatives to lithium-ion batteries(LIBs) in large-scale energy storage scenarios. Nevertheless, lacking desirable electrodes for reversibly hosting the bulky K+hinders the widespread application of KIBs, and it needs to be urgently solved. Hereon, the porous S-doped Sb_(2)O_(3)-graphene-carbon(SAGC) nanofibers are manufactured through an adjustable and facile approach, which involves electrospinning, in situ etching and sulfuration. The synthesized SAGC is featured by the ultra-small amorphous Sb_(2)O_(3) homogeneously wrapped inside the carbon matrix, as well as the co-incorporation of graphene and sulfur. Tentatively,the SAGC nanofiber sheets are applied as binder-free anodes for KIBs, exhibiting a prominent cycling life(256.72 m Ah·g^(-1) over 150 cycles at 100 m A·g^(-1)) and rate·g^(-1) over 100 cycles at 1 A·g^(-1)). The positive synergy among all the active components accounts for the distinguished performances of the SAGC. By reinforcing the tolerability to the swelling stress, producing the valid electrochemical active sites, and promoting the charge transferring for reversible K+uptake, the SAGC finally renders the excellent cyclability, capacity, and rate capability. Moreover, the extrinsic electrochemical pseudocapacitance characteristics induced by the porous carbon substrate elevate the K-storage capacity of the SAGC as well. It is hoped that the conclusions drawn may offer new insights into a direction for the high-performance binderfree KIB anodes.

关键词： S-doped Sb_(2)O_(3)-graphene-carbon nanofibers Binder-free Anodes Potassium-ion batteries

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Optimal and robust control of population transfer in asymmetric quantum-dot molecules

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Chinese physics B 2024年第2期33卷 353-359页

作者：郭裕马松山束传存 hunan provincial key laboratory of Flexible Electronic Materials Genome Engineering School of Physics and Electronic ScienceChangsha University of Science and TechnologyChangsha 410114China hunan key laboratory of nanophotonics and devices School of PhysicsCentral South UniversityChangsha 410083China

We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot molecules.We derive a long-duration control scheme that allows for highly efficient population transfer by accurately controlling the amplitude of a narrow-bandwidth pulse.To overcome fluctuations in control field parameters,we employ a frequency-domain quantum optimal control theory method to optimize the spectral phase of a single pulse with broad bandwidth while preserving the spectral amplitude.It is shown that this spectral-phase-only optimization approach can successfully identify robust and optimal control fields,leading to efficient population transfer to the target state while concurrently suppressing population transfer to undesired states.The method demonstrates resilience to fluctuations in control field parameters,making it a promising approach for reliable and efficient population transfer in practical applications.

关键词： population transfer quantum optimal control theory quantum-dot molecules

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Ultrathin surface coating of Cu enabling long-life Zn metal anodes

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Rare Metals 2024年第5期43卷 2125-2135页

作者： Sang-Sang Liu Ya-Ru Liang Wen-Long Chen Ze-Hua Wang Yi-Long Dai Fu-Gang Qi Zeng-Sheng Ma Xiao-Ping Ouyang School of Materials Science and Engineering Xiangtan University key laboratory of low dimensional Materials and Application Technology of ministry of education Xiangtan University

Aqueous zinc-ion batteries （AZIBs） are regarded as promising energy storage devices due to their low cost,high capacity,and ecological safety.Nevertheless,the severe dendritic growth and side reactions hinder their practical applicability significantly.Herein,an ultrathin Cu coating layer （～200 nm） is decorated on zinc foils via filtered cathodic vacuum arc deposition technology,aiming to achieve high-performance AZIBs.The Cu layer effectively suppresses chemical corrosion and hydrogen evolution reactions and enables preferential （002） Zn deposition during the stripping/plating cycles.Consequently,the Cu@Zn anode represents an elongated cycle life over 4,000 h at 2 mA·cm-2/2 mAh·cm-2.Even in conditions of high current density of 5 and 10 mA·cm-2,the Cu@Zn anode shows prolonged cycling stability exceeding 4000 and 2000 h,respectively.Such advantages also bring high Coulombic efficiency of 99.87% under 5 mAh·cm-2in Cu@Ti||Zn half-cell over 1500 cycles.Moreover,the Cu@Zn||MnO2full cell demonstrates a superior cyclability with a specific capacity of 203 mAh·g-1after 500 cycles a1 A·g-1.

关键词： Zn ion battery Zn metal anode Zn (002) plane Cu coating

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE Department of Applied physics The Hong Kong Polytechnic University key laboratory for micro-nano physics and Technology of hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of nanophotonic Materials and devices & key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum State Construction and Manipulation (ministry of education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State key Discipline laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University key laboratory of Artificial micro- and nano-Structures of ministry of education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State key laboratory for Artificial microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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