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Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao key Laboratory of Advanced semiconductor devices and materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State key Discipline Laboratory of wide band gap semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Construction of novel P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt heterophotocathode for enhanced photoelectrochemical water splitting

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Nano Research 2024年第5期17卷 4428-4436页

作者： Jiaru Li Jiayu Bai Songjie Hu Wenyu Yuan Yuyu Bu Xiaohui Guo key Lab of Synthetic and Natural Functional Molecule Chemistry of ministry of education Shaanxi Key Laboratory for Carbon Neutral TechnologyThe College of Chemistry and Materials ScienceNorthwest UniversityXi'an 710069China key Lab of wide band-gap semiconductor materials and devices School of MicroelectronicsXidian UniversityXi’an 710071China key Lab of Macromolecular Science of Shaanxi Province Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationSchool of Chemistry&Chemical EngineeringShaanxi Normal UniversityXi'an 710062China

Photoelectrochemical devices have been developed to enable the conversion of solar ***,their commercial potential is restricted by the limited stability of the materials *** enhance the stability of photocathode and its solar water splitting performance,a P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt composite photocathode is developed in this *** novel TiO_(2)/HfO_(2)/MoS_(2) serial nanostructure provides excellent stability of the photocathode,and optimizes the interface energy barrier to further facilitate the transfer process of photogenerated carriers within the *** best P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt photocathode demonstrates an initial potential of 0.5 V(***)and a photocurrent density of-29 mA/cm^(2) at 0 V(***).Through intensity modulated photocurrent spectroscopy and photoluminescence test,it is known that the enhanced water splitting performance is attributed to the optimized carrier transfer *** findings provide a feasible strategy for the stability and photon quantum efficiency enhancement of silicon-based photocathode devices.

关键词： photoelectrochemical water splitting stability surface/interface engineering HfO_(2)layer

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

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强激光与粒子束 2024年第10期36卷 44-52页

作者： Mao Xinyi Chai Changchun Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang key Laboratory of ministry of education for wide band-gap semiconductor materials and devices Xidian UniversityXi’an 710071China

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection *** paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP *** on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the *** the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse *** results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the *** addition,pulse signals with different attributes will change the damage threshold of the *** results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

关键词： fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction

Electrolyte-gated SrCoO_(x) FET sensor for highly sensitive detecting pH in extreme alkalinity solution

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Nano Research 2024年第4期17卷 3079-3086页

作者： Han Zhou Gaocan Qi Wenbin Li Yuhang Wang Zhihao Yuan School of materials Science and Engineering Tianjin Key Lab of Photoelectric Materials&Devicesand Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education)Tianjin University of TechnologyTianjin 300384China

The pH monitoring is significantly important in chemical industry,biological process,and pollution ***,it remains a great challenge to measure pH in extreme alkalinity ***,we employ an electrolyte-gated field-effect-transistor(FET)strategy using non-stoichiometric SrCoO_(x) with rich oxygen-vacancy defects as channel materials for detecting extreme *** corresponding channel can provide effective oxygen-ion-migration sites for reversible transformation of OH-↔O_(2)-+H^(+)driven by electric *** resultant electrolyte-gated FET sensor exhibits a sensitive linear response to high concentrations of alkaline solution,1–20 ***,the sensor has the ability to directly indicate the pH values ranging from 14.0 to 17.0 in consideration of ion-activity coefficient *** work offers a great possibility for directly detecting base concentration as well as pH values in extreme alkaline solutions.

关键词： field-effect-transistor(FET) pH sensor extreme alkaline solution SrCoO_(x) oxygen-ion migration

Rational design multi-color-emissive chemiluminescent carbon nanodots in a single solvothermal reaction

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Nano Research 2024年第6期17卷 4651-4660页

作者： Guang-Song Zheng Cheng-Long Shen Yuan Deng Kai-Kai Liu Jin-Hao Zang Lin Dong Qing Lou Chong-Xin Shan Henan key Laboratory of Diamond Optoelectronic materials and devices Key Laboratory of Materials PhysicsMinistry of Educationand School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Recently,the chemiluminescence(CL)induced by carbon nanodots(CDs)has intrigued researchers’extensive interests in various applications due to its special light emission ***,the difficulty of synthesizing chemiluminescent CDs with full-spectrum emission severely hinders the further regulation of the CL emission ***,the multi-color-emissive chemiluminescent CDs are rational designed and further synthesized by regulating the sp2-hybrid core and sp3-hybrid surface from the citrate-ammonia molecular in a single solvothermal *** experimental characterizations and density functional theory calculations reveal that the higher temperature can promote the crosslinking polymerization/carbonization of carbon core and the higher protonation of solvent can determine the core size of final CDs,resulting in the variant CL emission from molecular-,crosslinking-and ***,the CL emission of the CDs can be further synthesized by tuning the luminescence chromophores in the formation process via regulating the temperature and solvent,enabling the applications of the CL CDs in illumination and information *** study paves a new technology to understand the luminescence of CDs and affords an industry translational potential over traditional chemiluminescent molecular.

关键词： carbon nanodots chemiluminescence regulation energy level alignment mechanism

Cationic engineered nanodiamonds for efficient antibacterial surface with strong wear resistance

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Nano Research 2024年第3期17卷 939-948页

作者： Fu-Kui Li Wen-Bo Zhao Yong Wang Wen-Tao Huang Ya-Lun Ku Hang Liu Rui Guo Hui-Hui Yu Kai-Kai Liu Chong-Xin Shan Henan key Laboratory of Diamond Optoelectronic materials and devices Key Laboratory of Materials PhysicsMinistry of Educationand School of Physics&MicroelectronicsZhengzhou UniversityZhengzhou 450052China

The spread of diseases caused by bacterial adhesion and immobilization in public places constitutes a serious threat to public *** of bacteria spread by the construction of an antibacterial surface takes precedence over post-infection ***,we demonstrate an effective antibacterial surface with strong wear resistance by constructing cationic engineered nanodiamonds(C-NDs).The C-NDs with positive surface potentials interact effectively with bacteria through electrostatic interactions,where the C-NDs act on the phospholipid bilayer and lead to bacterial membrane collapse and rupture through hydrogen bonding and residual surface oxygen-containing reactive *** this case,bactericidal rate of 99.99%and bacterial biofilm inhibition rate of more than 80%can be achieved with the C-NDs concentration of 1 mg/*** addition,the C-NDs show outstanding antibacterial stability,retaining over 87%of the antibacterial effect after stimulation by adverse environments of heat,acid,and external ***,an antibacterial surface with high wear resistance obtained by integrating C-NDs with commercial plastics has been *** antibacterial surface with a mass fraction of 1 wt.%C-NDs improved abrasion resistance by 3981 times,with 99%killing of adherent *** work provides an effective strategy for highly efficient antibacterial wear-resistant surface,showing great practical applications in public health environments.

关键词： antibacterial surface cationic engineered nanodiamonds wear-resistant

Core-Shell semiconductor-Graphene Nanoarchitectures for Efficient Photocatalysis:State of the Art and Perspectives

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Nano-Micro Letters 2024年第12期16卷 553-588页

作者： Jinshen Lan Shanzhi Qu Xiaofang Ye Yifan Zheng Mengwei Ma Shengshi Guo Shengli Huang Shuping Li Junyong Kang Engineering Research Center of Micro-Nano Optoelectronic materials and devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI Center for OSEDDepartment of PhysicsXiamen UniversityXiamen 361005People’s Republic of China

semiconductor photocatalysis holds great promise for renewable energy generation and environment remediation,but generally suffers from the serious drawbacks on light absorption,charge generation and transport,and structural stability that limit the *** core-shell semiconductorgraphene(CSSG)nanoarchitectures may address these issues due to their unique structures with exceptional physical and chemical *** review explores recent advances of the CSSG nanoarchitectures in the photocatalytic *** starts with the classification of the CSSG nanoarchitectures by the ***,the construction methods under internal and external driving forces were introduced and compared with each ***,the physicochemical properties and photocatalytic applications of these nanoarchitectures were discussed,with a focus on their role in *** ends with a summary and some perspectives on future development of the CSSG nanoarchitectures toward highly efficient photocatalysts with extensive *** harnessing the synergistic capabilities of the CSSG architectures,we aim to address pressing environmental and energy challenges and drive scientific progress in these fields.

关键词： Core-shell semiconductor-graphene Nanoarchitecture Photocatalysis Driving force Interface

A new nonfullerene acceptor with an extended π conjugation core enables ternary organic solar cells approaching 19%efficiency

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Nano Research 2024年第5期17卷 4062-4068页

作者： Chunyan Liu Nailiang Qiu Zhengjin Li Yan Lu School of materials Science and Engineering Tianjin Key Laboratory for Photoelectric Materials and DevicesKey Laboratory of Display Materials and Photoelectric DevicesMinistry of EducationTianjin University of TechnologyTianjin 300384China School of Chemistry Chemical Engineering and MaterialsJining UniversityQufu 273155China

In organic solar cells(OSCs),it is an effective way to improve the power conversion efficiency(PCE)by adding a guest component with appropriate absorption and energy levels in the host ***,a new nonfullerene acceptor(NFA)named TBF-2Cl was developed by the strategy of expanding theπconjugated core of 2,2’-(((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b’]dithiophene-2,7-diyl)bis(methaneylylidene))bis(5,6-dichloro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IDT-4Cl)with two benzene *** increase of benzene units,TBF-2Cl exhibits higher lowest unoccupied molecular orbital(LUMO)level of-3.75 eV than that of one benzene unit based NFA IDT-4Cl and fluorene core based NFA F-2Cl,which facilitates enhancing the open-circuit voltage(V_(oc))of ternary ***,TBF-2Cl film shows a medium optical bandgap with the absorption range from 500-800 nm,being well complementary with the wide bandgap polymer donor D18 and narrow bandgap NFA ***,a remarkable PCE of 18.92%with a high short-circuit current density(J_(sc))of 27.40 mA·cm^(-2),a fill factor(FF)of 0.749,especially an outstanding V_(oc) of 0.922 V was achieved for the optimal ternary device based on D18:TBF-2Cl:CH-6F,surpassing the binary counterpart(17.08%).The findings provide insight into the development of new guest acceptors for obtaining more efficient OSCs.

关键词： medium optical bandgap high lowest unoccupied molecular orbital(LUMO)level the third component ternary organic solar cell high open-circuit voltage

Evidence for reversible oxygen ion movement during electrical pulsing:enabler of emerging ferroelectricity in binary oxides

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materials Futures 2024年第3期3卷 195-205页

作者： Huan Liu Fei Yu Bing Chen Zheng-Dong Luo Jiajia Chen Yong Zhang Ze Feng Hong Dong Xiao Yu Yan Liu Genquan Han Yue Hao State key Discipline Laboratory of wide band gap semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China Research Center for Intelligent Chips and devices Zhejiang LabHangzhou 311121People’s Republic of China Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350People’s Republic of China

Ferroelectric HfO_(2)-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control,degraded reliability,and serious variation in effective oxide thickness *** demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films,which are formed in oxygen-deficient conditions by atomic layer deposition at low *** approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO_(2)-based *** theoretical modeling and experimental characterization,we show the following.(1)Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process.(2)These ferroelectric binary oxide films are governed by an interface-limited switching mechanism,which can be attributed to oxygen vacancy migration and surface defects related to electron(de)trapping.(3)Transistors featuring ultrathin amorphous dielectrics,used for non-volatile memory applications with an operating voltage reduced to±1 V,have also been experimentally *** findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

关键词： ferroelectric binary oxide mobile ion amorphous dielectric nonvolatile memory