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Variational quantum algorithm for node embedding

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Fundamental Research 2024年第4期4卷 845-850页

作者： Zeng-rong Zhou Hang Li Gui-Lu Long Research Center for quantum Sensing Zhejiang LabHangzhou 311121China Bejing Academy of quantum information Sciences Beijing 100193China State key laboratory of Low-Dimensional quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China

quantum machine learning has made remarkable progress in many important ***,the gate complexity of the initial state preparation is seldom considered in lots of quantum machine learning algorithms,making them ***,we propose a quantum algorithm for the node embedding problem that maps a node graph's topological structure to embedding *** resulting quantum embedding state can be used as an input for other quantum machine learning *** O(log(N))qubits to store the information of N nodes,our algorithm will not lose quantum advantage for the subsequent quantum information ***,owing to the use of a parameterized quantum circuit with O(poly(log(N)))depth,the resulting state can serve as an efficient quantum *** addition,we explored the measurement complexity of the quantum node embedding algorithm,which is the main issue in training parameters,and extended the algorithm to capture high-order neighborhood information between ***,we experimentally demonstrated our algorithm on an nuclear magnetic resonance quantum processor to solve a graph model.

关键词： quantum machine learning quantum computation Node embedding Variational quantum algorithm Nuclear magnetic resonance

quantum squeezing induced nonreciprocal phonon laser

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Science China(Physics,Mechanics & Astronomy) 2024年第6期67卷 20-30页

作者： Tian-Xiang Lu Yan Wang keyu Xia Xing Xiao Le-Man Kuang Hui Jing College of Physics and Electronic information Gannan Normal UniversityGanzhou 341000China key laboratory of Low-Dimensional quantum Structures and quantum Control of Ministry of Education Department of Physics and Synergetic Innovation Center for Quantum Effects and ApplicationsHunan Normal UniversityChangsha 410081China Academy for quantum Science and Technology Zhengzhou University of Light IndustryZhengzhou 450002China College of Engineering and Applied Sciences National Laboratory of Solid State Microstructuresand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China

Phonon lasers or coherent amplifications of mechanical oscillations are powerful tools for fundamental studies on coherent acoustics and hold potential for diverse applications,ranging from ultrasensitive force sensing to phononic information ***,we propose the use of an optomechanical resonator coupled to a nonlinear optical resonator for directional phonon *** find that by pumping the nonlinear optical resonator,directional optical squeezing can occur along the pump *** a result,we can achieve the directional mechanical gain using directional optical squeezing,thereby leading to nonreciprocal phonon lasing with a well-tunable directional power *** work proposes a feasible way to build nonreciprocal phonon lasers with various nonlinear optical media,which are important for a wide range of applications,such as directional acoustic amplifiers,invisible sound sensing or imaging,and one-way phononic networks.

关键词： nonreciprocal phonon laser directional quantum squeezing optomechanics

Wideband chaos generation using a VCSEL with intensity modulation optical injection for random number generation

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Science China(information Sciences) 2024年第6期67卷 457-458页

作者： Yu HUANG Shuangquan GU Yuhang FENG Yigong YANG Shuiying XIANG Pei ZHOU Nianqiang LI School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University State key laboratory of Integrated Service Networks Xidian University key lab of Advanced Optical Manufacturing Technologies of Jiangsu province & key lab of Modern Optical Technologies of Education Ministry of China Soochow University

Physical random numbers have been widely used in modern network society,such as the generation of cryptographic keys for classical and quantum cryptography systems[1].Among the many sources of physical entropy,chaotic semiconductor lasers have attracted wide attention due to their desired characteristics including larger bandwidth,low cost,and monolithic integration[2].

关键词： Optical signal processing

Engineering strong spin-frustration at the surface of three-dimensional graphene

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Science Bulletin 2024年第18期69卷 2816-2819页

作者： Wenjing Li Ken Chen Menglei Li Huiying Gao Jize Zhao Fawei Zheng Wenhui Duan Center for quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)School of PhysicsBeijing Institute of TechnologyBeijing 100081China Beijing key lab of Nanophotonics&Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of TechnologyBeijing 100081China School of Physical Science and Technology Key Laboratory of Quantum Theory and Applications of MOELanzhou UniversityLanzhou 730000China Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu ProvinceLanzhou UniversityLanzhou 730000China Department of Physics Capital Normal UniversityBeijing 100048China State key laboratory of Low Dimensional quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China Institute for Advanced Study Tsinghua UniversityBeijing 100084China Frontier Science Center for quantum information Beijing 100084China Beijing Academy of quantum information Sciences Beijing 100193China

Since the first successful fabrication in 2004[1],graphene has received tremendous attention due to its extremely simple atomic structure and alluring physical *** example,its massless low energy excitations have a linear dispersion and thus its transport property is governed by Dirac equation instead of Schr?dinger *** special electronic structures suppress the intra-valley and inter-valley backscatterings,leading to the half-integer and fractional quantum Hall effect[2]under magnetic field and the relativistic quantum tunneling described by the Klein paradox[3].

关键词： properties. equation. quantum

Two-dimensional materials for future information technology: status and prospects

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Science China(information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key lab of quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of Hunan province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Gas sensors based on TiO_(2) nanostructured materials for the detection of hazardous gases: A review

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Nano Materials Science 2021年第4期3卷 390-403页

作者： Xu Tian Xiuxiu Cui Tingrun Lai Jie Ren Zhichao Yang Mingjing Xiao Bingsen Wang Xuechun Xiao Yude Wang School of Materials and Energy Yunnan University650091KunmingPR China National Center for International Research on Photoelectric and Energy Materials Yunnan University650091KunmingPR China key lab of quantum information of yunnon province Yunnon University650091KunmingPR China

Hazardous gases have been strongly associated with being a detriment to human life within the environment The development of a reliable gas sensor with high response and selectivity is of great signifcance for detecting different hazardous ***_(2) nanomaterials are promising candidates with great potential and excellent per-formance in gas sensor applications,such as hydrogen,acetone,ammonia,and ethanol *** review begins with a detailed discussion of the di ferent dimensional morphologies of TiO_(2),whitch affect the gas sensing performance of TiO_(2) *** diverse morphologies of TiO_(2) can easily be tuned by regulating the manufacturing ***,they exhibit unique characteristics for detecting gases,including large specific suface area,superior elecron tr ansport rates,extraordinary pemmeability,and active reaction sites,which offer new opportunities to improve the gas sensing *** addition,a variety of efforts have been made to functional TiO_(2) nanomaterials to further enhance sensing properties,including TiO_(2)-based composites and light-assisted gas *** enhanced gas sensing mechanisms of multi-component composite nano-materials based on TiO_(2) include loaded noble metals,doped elements,constructed heterojunctions,and com-pounded with other functional ***,several studies have been summarized to demonstate the compar ative sensing properties of TiO_(2)-based gas sensors.

关键词： Gas sensor TiO_(2)nanomaterials TiO_(2)-Based composites Gas sensing mechanisn

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing key lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

3D bioprinting of in vitro porous hepatoma models:establishment,evaluation,and anticancer drug testing

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Bio-Design and Manufacturing 2024年第2期7卷 137-152页

作者： Xiaoyuan Wang Zixian Liu Qianqian Duan Boye Zhang Yanyan Cao Zhizhong Shen Meng Li Yanfeng Xi Jianming Wang Shengbo Sang Shanxi key laboratory of Micro Nano Sensors and Artificial Intelligence Perception College of Electronic Information and Optical EngineeringTaiyuan University of TechnologyTaiyuan 030024China key lab of Advanced Transducers and Intelligent Control System of the Ministry of Education Taiyuan University of TechnologyTaiyuan 030024China Shanxi Institute of 6D Artificial Intelligence Biomedical Science Taiyuan 030031China Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan 030024China Department of Pathology Shanxi Provincial Cancer HospitalTaiyuan 030024China General Hospital of Taiyuan Iron and Steel Company Taiyuan 030809China

Traditional tumor models do not tend to accurately simulate tumor growth in vitro or enable personalized treatment and are particularly unable to discover more beneficial targeted *** address this,this study describes the use of threedimensional(3D)bioprinting technology to construct a 3D model with human hepatocarcinoma SMMC-7721 cells(3DP-7721)by combining gelatin methacrylate(GelMA)and poly(ethylene oxide)(PEO)as two immiscible aqueous phases to form a bioink and innovatively applying fluorescent carbon quantum dots for long-term tracking of *** GelMA(10%,mass fraction)and PEO(1.6%,mass fraction)hydrogel with 3:1 volume ratio offered distinct pore-forming characteristics,satisfactorymechanical properties,and biocompatibility for the creation of the 3DP-7721 *** analysis and quantitative real-time fluorescence polymerase chain reaction(PCR)were used to evaluate the biological properties of the *** with the two-dimensional culture cell model(2D-7721)and the 3D mixed culture cell model(3DM-7721),3DP-7721 significantly improved the proliferation of cells and expression of tumor-related proteins and ***,we evaluated the differences between the three culture models and the effectiveness of antitumor drugs in the three models and discovered that the efficacy of antitumor drugs varied because of significant differences in resistance proteins and genes between the three *** addition,the comparison of tumor formation in the three models found that the cells cultured by the 3DP-7721 model had strong tumorigenicity in nude *** evaluation of the levels of biochemical indicators related to the formation of solid tumors showed that the 3DP-7721 model group exhibited pathological characteristics of malignant tumors,the generated solid tumors were similar to actual tumors,and the deterioration was *** research therefore acts as a foundation for the application of 3DP-7721 models in drug devel

关键词： 3D bioprinting Hepatoma tumor models Drug screening Antitumor drug development

Unravel the Charge-Carrier Dynamics in Simple Dimethyl Oxalate-Treated Perovskite Solar Cells with Efficiency Exceeding 22％

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