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α-decay properties of superheavy nuclei with 117 ≤ Z ≤ 120 from the systematics of decay chains and isotopic chains

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Chinese Physics C 2024年第3期48卷 118-125页

作者：万涛唐树林钱以斌 Department of Applied Physics and MIIT Key Laboratory of semiconductor Microstructure and Quantum Sensing Nanjing University of Science and TechnologyNanjing 210094China

Recently, the synthesis of new elements above Z = 118 has been a hot topic in nuclear physics. Meanwhile, the α-decay chain is expected to be the unique tool to identify these heaviest nuclei. We have systematically calculated the α-decay energies and half-lives on the same footing for superheavy nuclei (SHN) within the cluster model along with a slightly modified Woods-Saxon (W.S.) potential as the nuclear potential. Based on the available experimental data, the key radius parameter (R) in the α-core potential is determined via the systematic trend from the α-decay and isotopic chains. The α-decay energy (Qα) values and half-lives are then obtained simultaneously for those unknown SHN in the range of 117 ≤ Z ≤ 120, during which the decay width is obtained using a new treatment for the asymptotic behavior of the α-core wave function. The theoretical values and experimental data are found to be in excellent agreement for the nuclei ^(293,294)117 and ^(294)118 regardless of the method used to determine the R parameter. Predicting the α-decay chains for new elements Z = 119 and Z = 120 can be useful in ongoing or forthcoming experiments.

关键词： superheavy nuclei αdecay decay chains isotopic chains

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

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Journal of semiconductors 2024年第8期45卷 74-80页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Laboratory of Metal Oxide semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of semiconductor Electronics and Physics of semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) ***.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 *** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

关键词： HVPE gallium oxide solar-blind ultraviolet detector self-powered mode

Regulating photocatalytic overall water splitting of ferroelectric heterostructures by size effect

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Nano research 2024年第9期17卷 8000-8006页

作者： Zixing Ye Daifu Yu Ruian Zhang Fei Qin Yiran Sun Jie Huang Zhanqi Zhou He Tian Gaorong Han Zhaohui Ren Gang Liu State Key Laboratory of Silicon and Advanced semiconductor Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China Center of Electron Microscopy School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China

In the past decade,ferroelectric materials have been intensively explored as promising *** intriguing ability of ferroelectrics is to directly sperate the photogenerated electrons and holes,which is believed to arise from a spontaneous *** how polarization affects the photocatalytic performance is vital to design high-efficiency *** this work,we report a size effect of ferroelectric polarization on regulating the photocatalytic overall water splitting of SrTiO_(3)/PbTiO_(3)nanoplate heterostructures for the first *** was realized hydrothermally by controlling the thickness and thus spontaneous polarization strength of single-crystal and single-domain PbTiO_(3)nanoplates,which served as the substrate for selective heteroepitaxial growth of SrTiO_(3).An enhancement of 22 times in the photocatalytic overall water splitting performance of the heterostructures has been achieved when the average thickness of the nanoplate increases from 30 to 107 nm.A combined experimental investigation revealed that the incompletely compensated depolarization filed is the dominated driving force for the photogenerated carrier separation within heterostructures,and its increase with the thickness of the nanoplates accounts for the enhancement of photocatalytic ***,the concentration of oxygen vacancies for negative polarization compensation has been found to grow as the thickness of the nanoplates increases,which promotes oxygen evolution reaction and reduces the stoichiometric ratio of H_(2)/O_(2).These findings may provide the opportunity to design and develop high-efficiency ferroelectric photocatalysts.

关键词： single-domain nanoplates size effect ferroelectric polarization screening photocatalytic overall water splitting

Side ionic-gated perovskite/graphene heterojunction synaptic transistor with bipolar photoresponse for neuromorphic computing

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Photonics research 2024年第6期12卷 1167-1174页

作者： XIAOYING HE MINGHAO XU SHILIN LIU KUN WANG BOWEN CAO LAN RAO XIANGJUN XIN School of Electronic Engineering and Beijing Key Laboratory of Space-Ground interconnection and Convergence Beijing University of Posts and TelecommunicationsBeijing 100876China Key Laboratory of semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China

By combining the good charge transport property of graphene and the excellent photo-carrier generation char-acteristic of perovskite nanocrystal,we propose and demonstrate an ionic-gated synaptic transistor based on CsPbBr_(3)∕graphene heterojunction for bipolar *** the potential barrier of the CsPbBr_(3)∕graphene heterojunction by the ionic-gate of the electrical double-layer effect can promote the sepa-ration of photogenerated carriers and effectively retard their *** the ionic-gate-tunable Fermi level of graphene and the pinning effect of perovskite nanocrystal,the bipolar photocurrent responses correspond-ing to the excitatory and inhibitory short-term and long-term plasticity are realized by adjusting the negative gate bias.A series of synaptic functions including logic operation,Morse coding,the optical memory and electrical erasure effect,and light-assisted re-learning have also been demonstrated in an optoelectronic collaborative ***,the excellent optical synaptic behaviors also contribute to the handwritten font recognition accuracy of-95%in artificial neural network *** results pave the way for the fabrication of bipolar photoelectric synaptic transistors and bolster new directions in the development of future integrated human ret-inotopic vision neuromorphic systems.

关键词： perovskite ionic Morse

Curing the vulnerable heterointerface via organic-inorganic hybrid hole transporting bilayers for efficient inverted perovskite solar cells

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Chinese Chemical Letters 2024年第6期35卷 254-257页

作者： Kangrong Yan Ziqiu Shen Yanchun Huang Benfang Niu Hongzheng Chen Chang-Zhi Li State Key Laboratory of Silicon and Advanced semiconductor Materials Department of Polymer Science and EngineeringZhejiang UniversityHangzhou 310027China

To promote the practices of perovskite photovoltaics,it requires to develop efficient perovskite solar cells(PVSCs)standing long-time operation under the adverse ***,we demonstrate that the tailor-made conjugated polymers as conductive adhesives stabilized the originally redox-reactive heterointerface between perovskite and metal oxide,facilitating the access of efficient and stable inverted *** was revealed that bithiophene and phenyl alternating conjugated polymers with partial glycol chains atop of the metal oxide layer has resulted in effective organic-inorganic hybrid hole transporting bilayers,which allow maintaining efficient hole extraction and transport,meanwhile preventing halide migration to directly contact with the nickel oxide(NiO_(x))*** a result,the corresponding inverted PVSCs with the organic-inorganic hole transporting bilayers have achieved an excellent power conversion efficiency of 23.22%,outperforming 20.65% of bare NiO_(x)-based ***,the encapsulated PVSCs with organic-inorganic bilayers exhibited the excellent photostability with 91% of the initial efficiency after 1000-h one-sun equivalent illumination in ambient ***,this work provides new insights into stabilizing the vulnerable heterointerface for perovskite solar cells.

关键词： Perovskite solar cells Conjugated polymer Hole transporting bilayer Charge extraction Heterointerface degradation

Heterointerface Engineering-Induced Oxygen Defects for the Manganese Dissolution Inhibition in Aqueous Zinc Ion Batteries

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Energy & Environmental Materials 2024年第3期7卷 112-122页

作者： Wentao Qu Yong Cai Baohui Chen Ming Zhang Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Engineering research Center of Advanced semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Changsha semiconductor Technology and Application Innovation research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China State Key Laboratory of Disaster Prevention&Reduction for Power Grid Transmission and Distribution Equipment(Hunan Electric Power Corporation Disaster Prevention and Reduction Center) Changsha 410007China

Manganese-based material is a prospective cathode material for aqueous zinc ion batteries(ZIBs)by virtue of its high theoretical capacity,high operating voltage,and low ***,the manganese dissolution during the electrochemical reaction causes its electrochemical cycling stability to be *** this work,heterointerface engineering-induced oxygen defects are introduced into heterostructure MnO_(2)(δa-MnO_(2))by in situ electrochemical activation to inhibit manganese dissolution for aqueous zinc ion ***,the heterointerface between the disordered amorphous and the crystalline MnO_(2)ofδa-MnO_(2)is decisive for the formation of oxygen *** the experimental results indicate that the manganese dissolution ofδa-MnO_(2)is considerably inhibited during the charge/discharge *** analysis indicates that the oxygen defect regulates the electronic and band structure and the Mn-O bonding state of the electrode material,thereby promoting electron transport kinetics as well as inhibiting Mn ***,the capacity ofδa-MnO_(2)does not degrade after 100 cycles at a current density of 0.5 Ag^(-1)and also 91%capacity retention after 500cycles at 1 Ag^(-1).This study provides a promising insight into the development of high-performance manganese-based cathode materials through a facile and low-cost strategy.

关键词： electrochemical activation heterointerface manganese dissolution inhibition oxygen defects zinc ion batteries

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

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Journal of semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi State Key Laboratory of Silicon and Advanced semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Power semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep level transient spectroscopy(DLTS) photoluminescence(PL) defects

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 168-175页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou Wide Bandgap semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation ***,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition

Etching-free pixel definition in InGaN green micro-LEDs

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Light(Science & Applications) 2024年第8期13卷 1655-1665页

作者： Zhiyuan Liu Yi Lu Haicheng Cao Glen Isaac Maciel Garcia Tingang Liu Xiao Tang Na Xiao Raul Aguileta Vazquez Mingtao Nong Xiaohang Li Advanced semiconductor Laboratory Electrical and Computer Engineering ProgramCEMSE DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall *** near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device *** this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric *** annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum ***,the pixel areas beneath the pre-deposited SiO_(2)layer were selectively and effectively *** was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage ***,applying a thicker SiO_(2)protective layer minimized device resistance and boosted device efficiency *** the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and *** results indicated that after 4 h of air annealing and with a 3.5-μm SiO_(2)protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10^(-6)A/cm^(2)at-10 V voltage and a peak on-wafer external quantum efficiency of~6.48%.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device ***-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based *** planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with ***,the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors

关键词： annealing protective quantum