检索结果-南通市图书馆

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第06期67卷 463-464页

作者： Fan ZHANG Zhaohao ZHANG Jiaxin YAO Qingzhu ZHANG Gaobo XU Zhenhua WU Huan LIU Genquan HAN Yan LIU Huaxiang YIN integrated circuit advanced process r&d center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of Microelectronics Xidian University School of integrated circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating *** capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process *** （FE） HfO2-based materials,

关键词：

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu integrated circuit advanced r&d center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of integrated circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-dIBL) and negative differential resistance(Ndr),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-dIBL phenomenon,the drain current(I_(dS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(dd)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semiconductor devices

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2024年第6期13卷 1098-1111页

作者： Jangryul Park Youngsun Choi Soonyang Kwon Youngjun Lee Jiwoong Kim Jae-joon Kim Jihye Lee Jeongho Ahn Hidong Kwak Yusin Yang Taeyong Jo Myungjun Lee Kwangrak Kim Metrology and Inspection Equipment r&d Team Mechatronics ResearchSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea process development department DRAM Process Development TeamSemiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea process development department Semiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea

As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(Cd)becomes increasingly *** test element group(TEG)measurements are becoming inadequate for representing the fine,repetitive patterns in cell *** non-destructive metrology technologies like optical critical dimension(OCd)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural ***,there is a pressing need for small-spot and non-destructive metrology *** address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with *** microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μ*** approach effectively breaks the diffraction limit,significantly enhancing the magnification of the *** MAHSI system incorporating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera *** achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is *** MAHSI system enables measurement of local uniformity in critical areas like corners and edges of drAM cell blocks,areas previously challenging to inspect with conventional OCd *** our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in complex 3d structures of semiconductor devices.

关键词： metrology resolution enable

Microstructure evolution and phase transformation of the mushy zone in a quenchedβ-solidifying TiAl alloy

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2024年第2期169卷 28-41页

作者： Fuqiang Zhang Xianfei ding Leming Xu Xin Feng Hai Nan Jianping He Yongfeng Liang Junpin Lin State Key Laboratory for advanced Metals and Materials University of Science and Technology BeijingBeijing 100083China Cast Titanium Alloy r&d center Beijing Institute of Aeronautical MaterialsBeijing 100095China

This study investigates the phase constitutions and transformations that occur in the mushy zone and in the adjacent phase fields of a directionally solidified Ti-44Al-8Nb-1Cr alloy via quenching *** results indicate that the mushy zone consists of unmeltedβdendrites and interdendritic liquid,whose formation can be attributed to the difference in melting point aroused by local heterogeneity in ***βdendrite is composed of numerous subgrains with various *** quenching,theβdendrite transforms into Widmanstättenαvia a precipitation reaction,owing to the decreasing cooling rate caused by heat transfer from the surrounding ***,after quenching,the interdendritic liquid is transformed intoγ*** the singleβphase field and the lower part of the mushy zone,a massive transformation ofβtoγ***,in theβ+αphase field,bothβandαphases are retained to ambient *** the heating process,the transformation ofα→βgives rise to the formation ofβvariants,which affects the orientation ofβdendrites in the mushy *** growth kinematics of theα→βtransformation was elucidated,revealing the preferential growth directions of111and112forβ***,this study presents an illustration of the formation process of the mushy zone and the microstructural evolution during the heating and quenching process.

关键词： Titanium aluminides Mushy zone Quenching Electron backscattering diffraction Phase transformation

Three-channel CMOS transimpedance amplifier for LidAr sensor receiver

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Systems Engineering and Electronics 2024年第1期35卷 74-80页

作者： LIU ruqing ZHU Jingguo JIANG Yan LI Feng JIANG Chenghao MENG Zhe Photoelectric r&d center Academy of Opto-ElectronicsChinese Academy of SciencesBeijing 100094China

For time-of-flight(TOF)light detection and ranging(LidAr),a three-channel high-performance transimpedance amplifier(TIA)with high immunity to input load capacitance is presented.A regulated cascade(rGC)as the input stage is at the core of the complementary metal oxide semiconductor(CMOS)circuit chip,giving it more immunity to input photodiode detectors.A simple smart output interface acting as a feedback structure,which is rarely found in other designs,reduces the chip size and power consumption *** circuit is designed using a 0.5μm CMOS process technology to achieve low *** device delivers a 33.87 dB?transimpedance gain at 350 *** a higher input load capacitance,it shows a-3 dB bandwidth of 461 MHz,indicating a better detector tolerance at the front end of the *** a 3.3 V supply voltage,the device consumes 5.2 mW,and the total chip area with three channels is 402.8×597.0μm2(including the test pads).

关键词： transimpedance amplifier(TIA) three-channel regulated cascade(rGC) light detection and ranging(LidAr)

recent progress in single crystal perovskite X-ray detectors

在线全文

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第3期67卷 5-19页

作者： Xiao LIU Jun rEN Yu-Ang CHEN Xiangshun GENG dan XIE Tian-Ling rEN School of integrated circuits Tsinghua University Beijing National research center for Information Science and Technology (BNrist)

Perovskites have attracted extensive attention as radiation detection material due to their long carrier diffusion length and lifetime, high absorption coefficient, and flexible manufacturing process. Compared with polycrystalline structures, single crystal perovskites improve the performance of optoelectronic devices due to their low defect state density, better photoelectric characteristics, and chemical ***, we review the recent progress of single crystal perovskite X-ray detectors. First, we briefly introduced the basic concepts, detection mechanisms, figure of merits of perovskite X-ray detectors, and the preparation methods of single crystal perovskites. Then, we summarized the significant advancements in single crystal perovskite X-ray detectors in recent times. Finally, we discussed the critical challenges and some practicable solutions for developing high-performance X-ray detectors.

关键词： single crystal perovskites carrier transport radiation detection X-ray detectors X-ray imaging

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Technological Sciences) 2024年第8期67卷 2449-2460页

作者： SHU LinCong SHA ShuLin XI ZhaoYing LI Lei YAO SuHao ZHANG JiaHan JI XueQiang ZHANG ShaoHui BIAN Ang JIANG MingMing GUO YuFeng TANG WeiHua LIU Zeng Innovation center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Science MIIT Key Laboratory of Aerospace Information Materials and PhysicsNanjing University of Aeronautics and AstronauticsNanjing 211106China Collaborative Innovation center of advanced Microstructures School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Institute of Biological and Medical Engineering Guangdong Academy of SciencesGuangzhou 510316China School of Science Jiangsu University of Science and TechnologyZhenjiang 212100China School of integrated circuits Beijing University of Posts and TelecommunicationsBeijing 100876China

In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various *** study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVd)***,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing *** performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot *** process is facilitated by non-radiative decay processes induced by ***,the array achieves maximum responsivity(r)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(d*)of approximately 10~(13)Jones,and photoconductive gain of *** addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the ***,the application of this array extends to photon detection in the deep-UV(dUV)*** includes critical areas such as imaging sensing and water quality *** leveraging surface plasmon coupling,the array achieves high-performance dUV photon *** approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of dUV detectors.

关键词： InGaO PECVd surface plasmon solar-blind UV photodetector array optoelectronic applications

同方期刊数据库

In-situ analysis of laser-induced breakdown spectra for online monitoring of femtosecond laser machining of sapphire

在线全文

学校读者我要写书评

暂无评论

Science China(Technological Sciences) 2024年第1期67卷 73-82页

作者： SHANGGUAN ShiYong ZHANG JianGuo LI ZhanZhu SHI Wei WANG WenKe QI dongFeng ZHENG HongYu center for advanced Laser Manufacturing(CALM) Shandong University of TechnologyZibo 255000China

Laser-induced breakdown spectroscopy(LIBS)is widely used for elemental ***,its application for monitoring and analyzing a laser machining process by examining the changes in spectral information warrants further *** this study,we investigate the effect of laser parameters on the spectra,variations in the time-resolved plasma emission spectra,and the relationship between the morphology of craters and plasma plume evolution during the femtosecond(fs)laser ablation of *** Boltzmann plot method and Stark’s broadening model are employed to estimate the temporal temperature and electron density of the plasma plume,revealing the process of plasma *** study aims to demonstrate the feasibility of LIBS for online monitoring of laser processing through experimental data and theoretical explanations.

关键词： laser-induced breakdown spectroscopy plasma plume online monitoring sapphire

Surface treatment of GaN nanowires for enhanced photoelectrochemical water-splitting

在线全文

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2024年第9期35卷 398-402页

作者： Wenhao Chen Jian du Hanbin Zhang Hancheng Wang Kaicheng Xu Zhujun Gao Jiaming Tong Jin Wang Junjun Xue Ting Zhi Longlu Wang College of integrated circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China

High-efficiency hydrogen production through photoelectrochemical(PEC)water splitting has emerged as a promising solution to address current global energy challenges.Ⅲ-nitride semiconductor photoelectrodes with nanostructures have demonstrated great potential in the near future due to their high light absorption,tunable direct band gap,and strong physicochemical ***,several issues,including surface trapping centers,surface Fermi level pinning,and surface band bending,need to be *** this work,enhanced photovoltaic properties have been achieved using gallium nitride(GaN)nanowires(NWs)photoelectrodes by adopting an alkaline solution surface treatment method to reduce the surface *** was found that surface oxides on NWs can be removed by an alkaline solution treatment without changing the surface morphology through X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM)and other characterization *** findings provide new insights to the development of high-efficiency photoelectrodes for new energy source applications.

关键词： Water splitting Photoelectrochemical cells Gallium nitride Surface treatment Nano-architectures