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The detection, extraction and parameter estimation of extreme-mass-ratio inspirals with deep learning

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Science China(physics,Mechanics & Astronomy) 2025年第1期Mechanics & Astronomy) .卷 86-96页

作者： Qianyun Yun Wen-Biao Han Yi-Yang Guo He Wang Minghui Du Hangzhou institute for Advanced Study University of Chinese Academy of Sciences Shanghai Astronomical Observatory Chinese Academy of Sciences School of physics and Astronomy Shanghai Jiao Tong University School of Astronomy and Space Science University of Chinese Academy of Sciences Taiji Laboratory for Gravitational Wave Universe (Beijing/Hangzhou) University of Chinese Academy of Sciences Lanzhou Center for Theoretical physics Key Laboratory of Theoretical Physics of Gansu Province Key Laboratory of Quantum Theory and Applications of MoE Lanzhou University institute of Theoretical physics & Research Center of Gravitation Lanzhou University International Centre for Theoretical physics Asia-Pacific (ICTP-AP) University of Chinese Academy of Sciences (UCAS) Center for Gravitational Wave Experiment National Microgravity Laboratory Institute of Mechanics Chinese Academy of Sciences

One of the primary goals of space-borne gravitational wave detectors is to detect and analyze extreme-mass-ratio inspirals(EMRIs). This task is particularly challenging because EMRI signals are complex, lengthy, and faint. In this work, we introduce a2-layer convolutional neural network(CNN) approach to detect EMRI signals for space-borne detectors, achieving a true positive rate(TPR) of 96.9% at a 1% false positive rate(FPR) for signal-to-noise ratio(SNR) from 50 to 100. Especially, the key intrinsic parameters of EMRIs such as the mass, spin of the supermassive black hole(SMBH) and the initial eccentricity of the orbit can also be inferred directly by employing a neural network. The mass and spin of the SMBH can be determined at 99% and 92% respectively. This will greatly reduce the parameter spaces and computing cost for the following Bayesian parameter *** model also has a low dependency on the accuracy of the waveform model. This study underscores the potential of deep learning methods in EMRI data analysis, enabling the rapid detection of EMRI signals and efficient parameter estimation.

关键词： gravitational wave EMRIs deep-learing

Composition-Dependent Characterization of Sb2Te3 thin films Prepared by Ion Beam Sputtering Deposition

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Chinese physics Letters 2010年第8期27卷 161-164页

作者：范平郑壮豪梁广兴蔡兴民张东平 institute of thin film physics and Application College of Physics Science and Technology Shenzhen University Shenzhen 518060

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.

关键词： Deblossoming thinness thinning Pruning Packaging materials films Electrical conductivity Antimony Tellurium Measurement

Growth and Characterization of CIS thin films Prepared by Ion Beam Sputtering Deposition

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Chinese physics Letters 2010年第4期27卷 189-192页

作者：范平梁广兴郑壮豪蔡兴民张东平 institute of thin film physics and Application College of Physics Science and Technology Shenzhen University Shenzhen 518060

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

Two-step growth of VSe_2 films and their photoelectric properties

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Chinese physics B 2019年第5期28卷 343-349页

作者： Yu Zeng Shengli Zhang Xiuling Li Jianping Ao Yun Sun Wei Liu Fangfang Liu Peng Gao Yi Zhang institute of Photoelectronic thin film Devices and Technology Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology Tianjin institute of Power Source

We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low *** is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.

关键词： two-step route VSe2 selenization thin film

Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation

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Chinese physics B 2019年第4期28卷 408-414页

作者： Zhen-Wu Jiang Shou-Shuai Gao Si-Yu Wang Dong-Xiao Wang Peng Gao Qiang Sun Zhi-Qiang Zhou Wei Liu Yun Sun Yi Zhang institute of Photoelectronic thin film Devices and Technology Tianjin Key Laboratory of Photoelectronic thin film Devices and Technology Tianjin institute of Power Source

Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu_2 ZnSnSe_4 p–n junction solar cell and the effect of In_2 S_3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS *** optimizing the band gap structure between Zn(O,S) buffer layer and Cu_2 ZnSnSe_4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV–0.4 eV for S/(S + O)= 0.6–0.8 in Zn(O,S). The In_2 S_3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).

关键词： CZTSe band alignment double buffer layer simulation

Wave-vector filtering effect of the electric-magnetic barrier in HgTe quantum wells

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Chinese physics B 2013年第3期22卷 466-470页

作者：邹永连宋俊涛 institute of physics Chinese Academy of Sciences Department of physics and Hebei Advanced thin film Laboratory Hebei Normal University

Because of the helicity of electrons in HgTe quantum wells（QWs） with inverted band structures,the electrons cannot be confined by electric barriers since electrons can tunnel the barriers perfectly without backscattering in the HgTe *** behavior is similar to Dirac electrons in *** this paper,we propose a scheme to confine carriers in HgTe QWs using an electric-magnetic *** calculate the transmission of carriers in 2-dimensional HgTe QWs and find that the wave-vector filtering effect of local magnetic fields can confine the *** confining effect will have a potential application in nanodevices based on HgTe QWs.

关键词： magnetic barrier topological insulator helical states HgTe quantum well

Plasma Syntheses of Carbon Nanotube-Supported Pt-Pd Nanoparticles

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Plasma Science and Technology 2016年第4期18卷 438-441页

作者：宋晔王奇孟月东 Key Laboratory of Novel thin film Solar Cells Institute of Plasma PhysicsChinese Academy of Sciences

It is reported that the highly dispersed Pt nanoparticles on carbon nanotubes can be synthesized under mild conditions by in situ plasma *** carbon nanotube was pretreated by O_2 plasma to transform into oxide carbon nanotubes（O-CNTs）,and then it was mixed with the precursors（the mixture of H_2 PtCl_6and PdCl_6）.After that,the O-CNTs and the precursors were simultaneously treated by H_2 *** precursors were transformed into Pt-Pd nanoparticles（NPs）and the O-CNTs transformed into *** synthesized CNT-based Pt-Pd nanoparticles were characterized by scanning electron microscopy,transmission electron microscopy,X-ray diffraction and X-ray photoelectron *** the analysis showed that the Pt-Pd nanoparticles were deposited on CNT as a form of face-centered cubical structure.

关键词： plasma synthesis carbon nanotube Pt-Pd nanoparticles

Controlling Ion Conductance and Channels to Achieve Synapticlike Frequency Selectivity

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Nano-Micro Letters 2015年第2期7卷 121-126页

作者： Siheng Lu Fei Zeng Wenshuai Dong Ao Liu Xiaojun Li Jingting Luo Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University institute of thin film physics and applications Shenzhen Key Laboratory of Sensor Technology Shenzhen University

Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-junction, the electrolyte layer handled at high temperature showed nano-fiber microstructures accompanied with greatly improved salt solubility. Ions with high mobility were confined in the nano-fibrous channels leading to the semiconducting polymer layer,which is favorable for modulating dynamic doping at the semiconducting polymer/electrolyte interface by pulse *** a device realized synaptic-like frequency selectivity, i.e., depression at low frequency stimulation but potentiation at high-frequency stimulation.

关键词： Ions migration Nano-channels Frequency selectivity Semiconducting polymer Organic electrolyte Dynamic doping

High-efficiency ultra-thin Cu_(2)ZnSnS_(4) solar cells by double-pressure sputtering with spark plasma sintered quaternary target

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Journal of Energy Chemistry 2021年第10期30卷 186-194,I0006页

作者： Ping Fan Zhigao Xie Guangxing Liang Muhammad Ishaq Shuo Chen Zhuanghao Zheng Chang Yan Jialiang Huang Xiaojing Hao Yi Zhang Zhenghua Su Shenzhen Key Laboratory of Advanced thin films and applications College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060GuangdongChina School of Photovoltaic and Renewable Energy Engineering UNSWSydneyNSW 2052Australia institute of Photoelectronic thin film Devices and Technology and Tianjin Key Laboratory of thin film Devices and Technology Nankai UniversityTianjin 300350China

In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost *** this work,double-pressure sputtering technology is applied to obtain highly efficient and ultra-thin(-450 nm)pure Cu_(2)ZnSnS_(4)(CZTS)solar *** mixed materials with sulfides and copper powder as a quaternary target via spark plasma sintering(SPS)method and adopting double-layer sputtering(high+low pressure),a highly adhesive and large-grained CZTS thin film is *** a result,the damage to the surface of Mo contact is decreased so that the reflectivity of incident light can be ***,the composition of CZTS film was more uniform and the secondary phase separation at the Mo interface was ***,the interface defect state and deep level defect density in corresponding device with double-pressure is reduced and the ratio of depletion thickness to absorption layer thickness can reached to 0.58,which promoted the collection of photogenerated ***,an efficiency of 9.3%for ultra-thin(~450 nm)CZTS film solar cell is obtained.

关键词： CZTS Ultra-thin Solar cell SPS Sputtering