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Investigation of MXene nanosheets based radio-frequency electronics by skin depth effect

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Nano Research 2024年第4期17卷 3061-3067页

作者： Rongguo Song Yunfa Si Wei Qian Haoran Zu Bilei Zhou Qinglei Du Daping He Yongliang Wang Air Force Early Warning Academy Wuhan 430019China Hubei Engineering Research Center of rf-Microwave Technology and Application Wuhan University of TechnologyWuhan 430070China Hainan Research institute Wuhan University of TechnologySanya 572000China

Various new conductive materials with exceptional properties are utilized for the preparation of electronic *** ultra-high conductivity is crucial to attain excellent electrical ***,there is a lack of systematic research on the impact of conductor material thickness on device ***,we investigate the effect of conductor thickness on power transmission and radiation in radio-frequency(rf)and microwave electronics based on MXene nanosheets material transmission lines and *** MXene transmission line with thickness above the skin depth exhibits a good transmission coefficient of approximately-3 dB,and the realized gain of MXene antennas exceeds 2 ***,the signal transmission strength of MXene antenna with thickness above the skin depth is higher than 5-μm MXene antenna approximately 5.5 *** lines and antennas made from MXene materials with thickness above the skin depth exhibit stable and reliable performance,which has significant implications for obtaining high-performance rf and microwave electronics based on new conductive materials.

关键词： MXene film radiao-frequency electronics antenna transmission line skin depth

Conceptual design of a 714-MHz rfQ for compact proton injectors and development of a new tuning algorithm on its aluminium prototype

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Nuclear Science and Techniques 2024年第1期35卷 45-58页

作者： Yi-Xing Lu Wen-Cheng Fang Yu-Sen Guo Zhen-Tang Zhao Shanghai institute of Applied Physics Chinese Academy of Sciences Shanghai 201800China University of Chinese Academy of Sciences Beijing 101408China Shanghai Advanced Research institute Chinese Academy of Sciences Shanghai 201204China Shanghai Key Laboratory of Cryogenics&Superconducting rf Technology Shanghai 201800China ShanghaiTech University Shanghai 201210China

Radio frequency quadrupoles(rfQs),which are crucial components of proton injectors,significantly affect the performance of proton accelerator *** rfQ with a high frequency of 714 MHz dedicated to compact proton injectors for medi-cal applications is designed in this *** rfQ is designed to accelerate proton beams from 50 keV to 4 MeV within a short length of 2 m and can be matched closely with the downstream drift tube linac to capture more particles through a preliminary *** develop an advanced rfQ,challenging techniques,including fabrication and tuning method,must be evaluated and verified using a *** aluminium prototype is derived from the conceptual design of the rfQ and then redesigned to confirm the radio frequency performance,fabrication procedure,and feasibility of the tuning ***,a new tuning algorithm based on the response matrix and least-squares method is developed,which yields favorable results based on the prototype,i.e.,the errors of the dipole and quadrupole components reduced to a low level after several tuning *** from the conceptual design and techniques obtained from the prototype,the formal mechanical design of the 2-m rfQ is ready for the next manufacturing step.

关键词： Compact proton injector rfQ IH-DTL High gradient Tuning

Robust textile-based spoof plasmonic frequency scanning antenna for on-body IoT applications

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Science China(Information Sciences) 2024年第8期67卷 269-284页

作者： Zhao-Min CHEN Jun-Lin ZHAN Hao CHEN Ya LI Hongjun HE Wu YANG Zhen-Guo LIU Wei-Bing LU State Key Lab of Millimeter Waves School of Information Science and EngineeringSoutheast University Center for Flexible rf Technology Frontiers Science Center for Mobile Information Communication and SecuritySoutheast University Future Research Laboratory China Mobile Research Institute Purple Mountain Laboratories

Securing a comfortable, wearable compact frequency beam scanning antenna(FBSA) with robustness to deformation, low specific absorption rate(SAR), and good coverage of the surrounding environment for Internet of Things(IoT) applications, such as on-body navigation and wireless communication is an emerging challenge. In this work, a robust textile-based spoof plasmonic frequency scanning antenna utilizing higher-order modes is presented, which is also robust to deformation caused by the activities of the human body. The innovative design of the element ensures the high-efficiency transmission of the fundamental mode of spoof surface plasmon polaritons(SSPP) structure, providing the potential of being a multifunctional composite device in the compact on-body network. Besides, an artificial magnetic conductor(AMC) is designed underneath the SSPP structure, obtaining a low SAR value(0.113 W/kg), which ensures the safety of users. As a practical realization of this concept, a textile-based spoof plasmonic antenna was fabricated in the microwave regime and the performed experimental results show the proposed antenna has a single-beam radiation characteristic with a 70° beam scanning angle range when the frequency is 4.7–6.0 GHz with a high average realized gain of 13.15 dBi. And it still maintains a steady performance when faced with structure deformation, which proves its robustness. Wireless communication quality experiments are performed to demonstrate the proposed antenna can measure the angles of targets and realize wireless signal transmission to specific targets as the frequency varies, it may find great potential in the field of on-body IoT applications.

关键词： frequency beam scanning antenna (FBSA) Internet of Things (IoT) on-body communication spoof surface plasmon polaritons (SSPP) textile-based antenna

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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

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Frontiers of Information Technology & Electronic Engineering 2022年第2期23卷 346-350页

作者： Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO institute of rf-&oe-ics Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of rf-ics and rf-Systems Ministry of EducationNanjing 210096China

A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.

关键词： amplifier power MMIC

Design of 20-44 GHz broadband doubler MMIC

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Journal of Semiconductors 2010年第4期31卷 113-116页

作者：李芹王志功李伟 institute of rf-& oe-ics Southeast University institute of rf- & oe-ics Southeast University

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.

关键词： frequency doubler active Balun distributed amplifier

A wideband low power low phase noise dual-modulus prescaler

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Journal of Semiconductors 2011年第2期32卷 130-136页

作者：雷雪梅王志功王科平 institute of rf-& oe-ics Southeast University China Inner Mongolia University institute of rf- & oe-ics Southeast University

This paper describes a novel divide-by-32/33 dual-modulus prescaler （DMP）. Here, a new combination of DFF has been introduced in the DMP. By means of the cooperation and coordination among three types, DFF, SCL, TPSC, and CMOS static flip-flop, the DMP demonstrates high speed, wideband, and low power consumption with low phase noise. The chip has been fabricated in a 0.18μm CMOS process of SMIC. The measured results show that the DMP＇s operating frequency is from 0.9 to 3.4 GHz with a maximum power consumption of 2.51 mW under a 1.8 V power supply and the phase noise is -134.78 dBc/Hz at 1 MHz offset from the 3.4 GHz carrier. The core area of the die without PAD is 57 x 30 #m2. Due to its excellent performance, the DMP could be applied to a PLL-based frequency synthesizer for many rf systems, especially for multi-standard radio applications.

关键词： dual-modulus prescaler wideband low power low phase noise frequency synthesizer multi-standard radio

Characterization of on-chip balun with patterned floating shield in 65 nm CMOS

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Journal of Semiconductors 2011年第10期32卷 67-73页

作者：韦家驹王志功 institute of rf-& oe-ics Southeast University

A simple method of balun synthesis is proposed to estimate the balun structure in the operating frequency ***,a careful optimization is implemented to evaluate the estimated structure by a series of EM simulations. In order to investigate the impact of the patterned floating shield（PFS）,the optimized baluns with and without PFS are fabricated in a 65 nm 1P6M CMOS *** measurement results demonstrate that the PFS obviously improves the insertion loss（IL） in the frequency range and a linear improving trend appears *** is also found that the PFS gradually improves the phase balance as the frequency increases,while it has a very slight influence on the magnitude *** characterize the device＇s intrinsic power transfer ability,we propose a method to obtain the baluns＇ maximum available gain directly from the measured 3-port S-parameters and find that IL-comparison may not be very objective when evaluating the shielding *** also use the resistive coupling efficiency to characterize the shielding effect,and an imbalanced shielding efficiency is found though the PFS is perfectly symmetric in the *** can be demonstrated that this phenomenon comes from the intrinsic imbalance of our balun layout.

关键词： Balun on-chip patterned floating shield passive devices rfIC silicon

A 2.5-Gb/s fully-integrated,low-power clock and recovery circuit in 0.18-μm CMOS

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Journal of Semiconductors 2010年第3期31卷 101-106页

作者：张长春王志功施思郭宇峰 institute of rf-& oe-ics Southeast University

Based on the devised system-level design methodology, a 2.5-Gb/s monolithic bang-bang phase-locked clock and data recovery （CDR） circuit has been designed and fabricated in SMIC＇s 0.18-μm CMOS technology. The Pottbiicker phase frequency detector and a differential 4-stage inductorless ring VCO are adopted, where an additional current source is added to the VCO cell to improve the linearity of the VCO characteristic. The CDR has an active area of 340 × 440μm2, and consumes a power of only about 60 mW from a 1.8 V supply voltage, with an input sensitivity of less than 25 mV, and an output single-ended swing of more than 300 mV. It has a pull-in range of 800 MHz, and a phase noise of-111.54 dBc/Hz at 10 kHz offset. The CDR works reliably at any input data rate between 1.8 Gb/s and 2.6 Gb/s without any need for reference clock, off-chip tuning, or external components.

关键词： clock and data recovery phase frequency detector voltage-controlled oscillator bang-bang jitter

A low power dual-band multi-mode rf front-end for GNSS applications

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Journal of Semiconductors 2010年第11期31卷 105-112页

作者：张浩李智群王志功 institute of rf-& oe-ics Southeast University

A CMOS dual-band multi-mode rf front-end for the global navigation satellite system receivers of all GPS,Bei-Dou,Galileo and Glonass systems is *** consists of a reconfigurable low noise amplifier（LNA）,a broadband active balun,a high linearity mixer and a bandgap reference（BGR） *** effect of the input parasitic capacitance on the input impedance of the inductively degenerated common source LNA is analyzed in *** using two different LC networks at the input port and the switched capacitor at the output port,the LNA can work at two different frequency bands（1.2 GHz and 1.5 GHz） under low power *** active balun uses a hybrid-connection structure to achieve high *** mixer uses the multiple gated transistors technique to acquire a high linearity under low power consumption but does not deteriorate other *** measurement results of the proposed front-end achieve a noise figure of 2.1/2.0 dB,a gain of 33.9/33.8 dB and an input 1-dB compression point of 0/1 dBm at 1227.6/1575.42 *** power consumption is about 16 mW under a 1.8 V power supply.

关键词： dual-band multi-mode electrostatic discharge low-noise amplifier active balun high linearity