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Flexible molecules dedicate to release strain of inverted inorganic perovskite solar cell

Journal of Energy Chemistry 2025年第1期100卷 87-93页

作者： Hongrui Sun Sanlong Wang Pengyang Wang Yali Liu Shanshan Qi Biao Shi Ying Zhao Xiaodan Zhang institute of photoelectronic thin film devices and technology Renewable Energy Conversion and Storage Center State Key Laboratory of Photovoltaic Materials and CellsNankai University Key Laboratory of photoelectronic thin film devices and technology of Tianjin Haihe Laboratory of Sustainable Chemical Transformations Engineering Research Center of thin film photoelectronic technology of Ministry of Education Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

The tensile strain in inorganic perovskite films induced by thermal annealing is one of the primary factors contributing to the inefficiency and instability of inorganic perovskite solar cells （IPSCs）,which reduces the defect formation ***,a flexible molecule 5-maleimidovaleric acid （5-MVA） was introduced as a strain buffer to release the residual strain of *** anhydride and carboxyl groups in 5-MVA interact strongly with the uncoordinated Pb2+through Lewis acid-base reaction,thus tightly“pull”the perovskite *** in-between soft carbon chain increased the structural flexibility of CsPbI2.85Br0.15perovskite materials,which effectively relieved the intrinsic internal strain of CsPbI2.85Br0.15,resisted the corrosion of external strain,and also reduced the formation of defects such as VIand *** addition,the introduction of 5-MVA improved crystal quality,passivated residual defects,and narrowed energy level ***,power conversion efficiency （PCE） of NiOxbased inverted IPSCs increased from 19.25% to 20.82% with the open-circuit voltage enhanced from 1.164 V to 1.230 *** release of strain also improved the stability of CsPbI2.85Br0.15perovskite films and devices.

关键词： Inverted inorganic perovskite solar cells Flexible molecules Strain release Crystallization Energy barrier High PCE

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Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

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Chinese Physics B 2011年第3期20卷 407-415页

作者：焦宝臣张晓丹魏长春孙建倪牮赵颖 institute of photo-electronic thin film devices and technology Nankai University

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

关键词： indium doped zinc oxide thin film ultrasonic spray pyrolysis double-layer structure solar cell

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Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

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Chinese Physics B 2011年第10期20卷 506-510页

作者：张晓丹郑新霞许盛之林泉魏长春孙建耿新华赵颖 institute of photo-electronic thin film devices and technology of nankai university

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum （Al） back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

关键词： amorphous and microcrystalline silicon single chamber solar cells

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The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

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Chinese Physics B 2009年第4期18卷 1674-1678页

作者：李贵君侯国付韩晓艳袁育洁魏长春孙建赵颖耿新华 institute of photo-electronic thin film devices and technology of nankai university Tianjin Key Laboratory of photo-electronic thin film devices and technology Key Laboratory of Opto-electronic Information Science and technology

This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

关键词： double N layer tunnel recombination junction oxidation interface a-Si:H/μc-Si:H tan-dem solar cell

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CuInSe2 films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

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Chinese Physics Letters 2010年第2期27卷 292-294页

作者：于涛张毅李宝璋姜伟龙王赫蔡永安刘玮李凤岩孙云 institute of photo-electronic thin film devices and technology and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300071

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 （CIS） films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu（In,Ga）Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.

关键词： electronics and devices Semiconductors Surfaces interfaces and thin films Plasma physics Condensed matter: structural mechanical & thermal

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A novel active-passive protection strategy endows carbonyl iron with excellent intelligent anti-corrosion and microwave absorption dual functional characteristics

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Nano Research 2025年第1期18卷 487-500页

作者： Wei Tian Quanyuan Feng Linbo Zhang Yinfan Liu Xian Jian Longjiang Deng institute of Microelectronics School of Information Science and TechnologySouthwest Jiaotong UniversityChengdu 611756China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of EducationState Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731China The Yangtze Delta Region institute(Huzhou)&School of electronic Science and Engineering University of Electronic Science and Technology of ChinaHuzhou 313001China

Carbonyl iron absorbers(CI)face significant challenges in practical applications,such as corrosion,interface bonding failure,detachment,and high maintenance ***,we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors(polydopamine/benzotriazole(PDA/BTA))and physical barrier layers(SiO_(2)/1,1,1,3,3,3-hexamethyl disilazane,SiO_(2)/HMDS)to enhance corrosion resistance,while also being compatible with efficient microwave absorption *** unique multiscale structure gives full play to the utilization of the roles of each functional layer,including the intelligent self-healing features of PDA/BTA,physical shielding and spatial confinement characteristics of SiO_(2)/HMDS,and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics,the conduction loss,the interfacial polarization loss and natural *** asfabricated composites achieved an exceptional minimum reflection loss value of-55.4 dB at 10.7 GHz and the effective absorption band of 7.6 ***,it still exhibits obvious self-healing and corrosion resistance characteristics after 360 h corrosion treatment,ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO_(2)/*** work is considered to pave the way for the synthesis of high-performance magnetic absorbers,especially in enhancing their intelligent self-healing ability in corrosive environments.

关键词： microwave absorption intelligent self-healing technology carbonyl iron multiscale structure magneticdielectric synergistic mechanism

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Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_(1-x)Ge_x :H

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Chinese Physics B 2013年第9期22卷 680-685页

作者：黄振华张建军倪牮曹宇胡子阳李超耿新华赵颖 institute of photo-electronics thin film devices and Technique Nankai University Key Laboratory of photo-electronics thin film devices and Technique Key Laboratory of photo-electronic Information Science and technology of Ministry of Education Nankai University

In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.

关键词： a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell simulation analyses of microelectronic andphotonic structures (AMPS-1D)

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Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

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Chinese Physics Letters 2015年第12期32卷 160-162页

作者：孙顶葛阳许盛之张力李宝璋王广才魏长春赵颖张晓丹 institute of photo electronics thin film devices and technology and Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

关键词： Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

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Reduction of the phosphorus contamination for plasma deposition of p-i-n microcrystalline silicon solar cells in a single chamber

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Chinese Physics B 2010年第9期19卷 638-642页

作者：王光红张晓丹许盛之郑新霞魏长春孙建熊绍珍耿新华赵颖 institute of photo-electronic thin film devices and technology of nankai university Key Laboratory of Photo-electronic Thin Film Devices and Technology of TianjinKey Laboratory of Opto-electronic Information Science and TechnologyMinistry of Education

This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

关键词： phosphorus contamination single chamber microcrystalline silicon solar cells

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Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells

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Chinese Physics B 2013年第11期22卷 664-668页

作者：余璇胡子阳黄振华于晓明张建军赵庚申赵颖 institute of photo-electronic thin film devices and technology of nankai university Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education

The effects of annealing rate and morphology of sol–gel derived zinc oxide （ZnO） thin films on the performance of inverted polymer solar cells （IPSCs） are investigated. ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs. The undulating morphologies of ZnO films fabricated at annealing rates of 10 ℃/min and 3 ℃/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 ℃/min. The ZnO films are characterized by atomic force microscopy （AFM）, optical transmittance measurements, and simulation. The results indicate that the ZnO film formed at 3 ℃/min possesses a good-quality contact area with the active layer. Combined with a moderate light-scattering, the resulting device shows a 16% improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.

关键词： polymer solar cells zinc oxide thin film morphology annealing

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