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Flexible molecules dedicate to release strain of inverted inorganic perovskite solar cell

Journal of Energy Chemistry 2025年第1期100卷 87-93页

作者： Hongrui Sun Sanlong Wang Pengyang Wang Yali Liu Shanshan Qi Biao Shi Ying Zhao Xiaodan Zhang institute of photoelectronic thin film devices and Technology Renewable Energy Conversion and Storage Center State Key Laboratory of Photovoltaic Materials and CellsNankai University Key Laboratory of photoelectronic thin film devices and Technology of Tianjin Haihe Laboratory of Sustainable Chemical Transformations Engineering Research Center of thin film photoelectronic Technology of Ministry of Education Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

The tensile strain in inorganic perovskite films induced by thermal annealing is one of the primary factors contributing to the inefficiency and instability of inorganic perovskite solar cells （IPSCs）,which reduces the defect formation ***,a flexible molecule 5-maleimidovaleric acid （5-MVA） was introduced as a strain buffer to release the residual strain of *** anhydride and carboxyl groups in 5-MVA interact strongly with the uncoordinated Pb2+through Lewis acid-base reaction,thus tightly“pull”the perovskite *** in-between soft carbon chain increased the structural flexibility of CsPbI2.85Br0.15perovskite materials,which effectively relieved the intrinsic internal strain of CsPbI2.85Br0.15,resisted the corrosion of external strain,and also reduced the formation of defects such as VIand *** addition,the introduction of 5-MVA improved crystal quality,passivated residual defects,and narrowed energy level ***,power conversion efficiency （PCE） of NiOxbased inverted IPSCs increased from 19.25% to 20.82% with the open-circuit voltage enhanced from 1.164 V to 1.230 *** release of strain also improved the stability of CsPbI2.85Br0.15perovskite films and devices.

关键词： Inverted inorganic perovskite solar cells Flexible molecules Strain release Crystallization Energy barrier High PCE

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Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_(1-x)Ge_x :H

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Chinese Physics B 2013年第9期22卷 680-685页

作者：黄振华张建军倪牮曹宇胡子阳李超耿新华赵颖 institute of photo-electronics thin film devices and technique Nankai University Key Laboratory of photo-electronics thin film devices and technique Key Laboratory of photo-electronic Information Science and Technology of Ministry of Education Nankai University

In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.

关键词： a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell simulation analyses of microelectronic andphotonic structures (AMPS-1D)

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Analysis of heating effect on the process of high deposition rate microcrystalline silicon

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Chinese Physics B 2010年第3期19卷 568-573页

作者：张晓丹张鹤魏长春孙建侯国付熊绍珍耿新华赵颖 institute of photo-electronics thin film devices and technique of nankai university Key Laboratory of Photo-electronics Thin Film Devices and Technique of TianjinKey Laboratory of Photo-electronic Information Science and Technology(Nankai University)Ministry of Education

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.

关键词： high pressure and high power microcrystalline silicon heating effect

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Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

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Chinese Physics B 2009年第10期18卷 4558-4563页

作者：张晓丹孙福和魏长春孙建张德坤耿新华熊绍珍赵颖 institute of photo-electronics Thin Film Devices and Technique of Nankai University Key Laboratory of Photo-ElectronicsThin Film Devices and Technique of Tianjin Key Laboratory of Photo-Electronic Information Science and Technology (Nankai University) Ministry of Education

This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

关键词： boron contamination single chamber microcrystalline silicon solar cells

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Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

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Chinese Physics B 2011年第3期20卷 407-415页

作者：焦宝臣张晓丹魏长春孙建倪牮赵颖 institute of photo-electronic thin film devices and Technology Nankai University

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

关键词： indium doped zinc oxide thin film ultrasonic spray pyrolysis double-layer structure solar cell

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Influence of local environment on the intensity of the localized surface plasmon polariton of Ag nanoparticles

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Chinese Physics B 2010年第4期19卷 388-393页

作者：黄茜张晓丹张鹤熊绍珍耿卫东耿新华赵颖 institute of photo-electronics thin film devices and technique of nankai university Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Key Laboratory of Opto-electronic Information Science and Technology(nankai university and Tianjin university) Ministry of Education

A combined Ag nanoparticle with an insulating or conductive layer structure has been designed tor molecular detection using surface enhanced Raman scattering microscopy. Optical absorption studies revealed localized surface plasmon resonance, which shows regular red shift with increasing environmental dielectric constant. With the combined structure of surface enhanced Raman scattering substrates and rhodamine 6C as a test molecule, the results in this paper show that the absorption has a linear relationship with the local electromagnetic field for insulating substrates, and the electrical property of the substrate has a non-negligible effect on the intensity of the local electromagnetic field and hence the Raman enhancement.

关键词： silver nanoparticles resonance absorption surface enhanced Raman scattering local environment

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Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

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Chinese Physics B 2011年第10期20卷 506-510页

作者：张晓丹郑新霞许盛之林泉魏长春孙建耿新华赵颖 institute of photo-electronic thin film devices and Technology of nankai university

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum （Al） back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.

关键词： amorphous and microcrystalline silicon single chamber solar cells

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Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

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Chinese Physics B 2008年第9期17卷 3448-3452页

作者：张丽平张建军尚泽仁胡增鑫耿新华赵颖 institute of photo-electronics thin film devices and technique Nankai UniversityTianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology Laboratory of Opto-electronic Information Science and Technology (Nankai UniversityTianjin University)Chinese Ministry of Education

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I^TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.

关键词： SiGe:H thin film plasma assisted RTCVD growth rates optoelectronics property

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Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

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Journal of Semiconductors 2013年第3期34卷 58-62页

作者：曹宇张建军李天微黄振华马峻杨旭倪牮耿新华赵颖 institute of photo-electronic thin film devices and technique of nankai university Key Laboratory of Photo-Electronics Thin Film Devices and Technique of TianjinKey Laboratory of Opto-Electronic Information Science and Technology of Ministry of Education

Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) *** effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are *** applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to ***,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.

关键词： hydrogenated microcrystalline silicon germanium seed layer incubation layer solar cell

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Structural properties of a-SiO_x:H films studied by an improved infrared-transmission analysis method

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Chinese Physics B 2014年第9期23卷 578-584页

作者：王烁张晓丹熊绍珍赵颖 institute of photo-electronic thin film Device and technique Nankai University

An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared （IR） transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials （a-SiOx：H） are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiOx：H materials is discussed in detail.

关键词： amorphous silicon oxide film thin thickness infrared transmission structural properties

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