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A new kind of superimposing morphology for enhancing the light scattering in thin film silicon solar cells： Combining random and periodic structure

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Chinese Physics B 2014年第8期23卷 350-356页

作者： Huang Zhen-Hua institute of photo-electronics thin film devices and technique of Nankai University Tianjin 300071 China Key Laboratory of photo-electronics thin film devices and technique of Tianjin Tianjin 300071 China Key Laboratory of photo-electronic Information Science and Technology of Ministry of Education (Nankai University) Tianjin 300071 China

In this article, a new type of superimposing morphology comprised of a periodic nanostructure and a random structure is proposed for the first time to enhance the light scattering in silicon-based thin film solar cells. According to the framework of the Reyleigh-Sommerfeld diffraction algorithm and the experimental results of random morphologies, we analyze the light-scattering properties of four superimposing morphologies and compare them with the individual morphologies in detail. The results indicate that the superimposing morphology can offer a better light trapping capacity, owing to the coexistence of the random scattering mechanism and the periodic scattering mechanism. Its scattering property will be dominated by the individual nanostructures whose geometrical features play the leading role.

关键词： light scattering superimposing morphology random periodic

Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

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Journal of Semiconductors 2013年第3期34卷 58-62页

作者：曹宇张建军李天微黄振华马峻杨旭倪牮耿新华赵颖 institute of photo-Electronic thin film devices and technique of Nankai University Key Laboratory of Photo-Electronics Thin Film Devices and Technique of TianjinKey Laboratory of Opto-Electronic Information Science and Technology of Ministry of Education

Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) *** effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are *** applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to ***,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.

关键词： hydrogenated microcrystalline silicon germanium seed layer incubation layer solar cell

Lithium-Ion Charged Polymer Channels Flattening Lithium Metal Anode

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Nano-Micro Letters 2024年第4期16卷 379-393页

作者： Haofan Duan Yu You Gang Wang Xiangze Ou Jin Wen Qiao Huang Pengbo Lyu Yaru Liang Qingyu Li Jianyu Huang Yun‑Xiao Wang Hua‑Kun Liu Shi Xue Dou Wei‑Hong Lai Hunan Provincial Key Laboratory of thin film Materials and devices School of Material Sciences and EngineeringXiangtan UniversityXiangtan 411105People’s Republic of China Guangxi Key Laboratory of Low Carbon Energy Materials School of Chemical and Pharmaceutical ScienceGuangxi Normal UniversityGuilin 541004People’s Republic of China institute for Superconducting and Electronic Materials Australian Institute of Innovative MaterialsUniversity of WollongongInnovation CampusSquires WayNorth WollongongNSW 2500Australia institute of Energy Materials Science University of Shanghai for Science and TechnologyShanghai 200093People’s Republic of China

The concentration difference in the near-surface region of lithium metal is the main cause of lithium dendrite *** this issue will be key to achieving high-performance lithium metal batteries(LMBs).Herein,we construct a lithium nitrate(LiNO_(3))-implanted electroactiveβphase polyvinylidene fluoride-co-hexafluoropropylene(PVDF-HFP)crystalline polymorph layer(PHL).The electronegatively charged polymer chains attain lithium ions on the surface to form lithium-ion charged *** channels act as reservoirs to sustainably release Li ions to recompense the ionic flux of electrolytes,decreasing the growth of lithium *** stretched molecular channels can also accelerate the transport of Li *** combined effects enable a high Coulombic efficiency of 97.0%for 250 cycles in lithium(Li)||copper(Cu)cell and a stable symmetric plating/stripping behavior over 2000 h at 3 mA cm^(-2)with ultrahigh Li utilization of 50%.Furthermore,the full cell coupled with PHL-Cu@Li anode and Li Fe PO_(4) cathode exhibits long-term cycle stability with high-capacity retention of 95.9%after 900 ***,the full cell paired with LiNi_(0.87)Co_(0.1)Mn_(0.03)O_(2)maintains a discharge capacity of 170.0 mAh g^(-1)with a capacity retention of 84.3%after 100 cycles even under harsh condition of ultralow N/P ratio of *** facile strategy will widen the potential application of LiNO_(3)in ester-based electrolyte for practical high-voltage LMBs.

关键词： Polymer ionic channel Li metal batteries Artificial protective layer Uniform Li deposition Electrochemical performances

Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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Science China(Information Sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU Research Center for Microwave photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United Microelectronics Center (CUMEC) Xiongan institute of Innovation Chinese Academy of Sciences

photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

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Chinese Physics Letters 2015年第12期32卷 160-162页

作者：孙顶葛阳许盛之张力李宝璋王广才魏长春赵颖张晓丹 institute of photo electronics thin film devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

关键词： Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

Squeezing-enhanced resolution of radio-frequency signals

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Chinese Optics Letters 2024年第7期22卷 100-104页

作者： Wei Li Mingjian Ju Qinghui Li Ruixin Li Wenxiu Yao Yimiao Wu Yajun Wang Long Tian Shaoping Shi Yaohui Zheng State Key Laboratory of Quantum Optics and Quantum Optics devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

We demonstrate a resolution enhancement scheme of radio-frequency signals by tailoring a phase-squeezed *** echo radio-frequency signals collected by photonic radar give rise to displacements in the phase quadrature of a probe laser and are estimated by the balanced homodyne *** contrast to the conventional coherent state,the noise variances for radio-frequency estimation with a squeezed state are reduced by approximately 6.9 *** to the Rayleigh criterion that defines the resolution limit,the minimum resolvable displacementΔa with a squeezed state is reduced to 45%compared to that with a coherent state,demonstrating the quantum *** squeezing-enhanced technique has extensive applications for multitarget recognition and tracking in contemporary photonic radar systems.

关键词： phase-squeezed state radio-frequency signal resolution.

Hydrothermal synthesis of hexagonal-phase NaYF_4:Er,Yb with different shapes for application as photovoltaic up-converters

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Chinese Physics B 2013年第2期22卷 492-498页

作者：王东丰张晓丹刘永娟吴春亚张存善魏长春赵颖 institute of photo-electronics thin film devices and technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of TianjinKey Laboratory of Photo-electronic Information Science and Technology(Nankai University)Ministry of Education State Key Laboratory of Silicon Materials Zhejiang University School of Information Engineering.Hebei University of Technology

Hexagonal β-NaYF4 co-doped with Yb3＋ and Er3＋ is directly synthesized under mild conditions using a hydrothermal *** variation of the ratio of Ln3＋ to F-and ethylenediaminetetraacetic acid（EDTA） causes the shape of the microcrystal to change from microplate to *** NaYF4 powder is mixed with polydimethylsiloxane（PDMS） to create an up-converter for thin film amorphous silicon solar cells so as to evaluate the effectiveness of the synthesized material as an *** order to overcome the difficulty in measuring the effectiveness of up-conversion material,a new method of using near infrared illumination to measure the short circuit current densities of solar cells both with and without up-converters is *** up-converter with pure hexagonal NaYF4：Yb3＋/Er3＋ microcrystal produces a high current *** intensity data obtained by photoluminescence suggest that pure hexagonal NaYF4：Yb3＋/Er3＋ microcrystals are more efficient than nanocrystals when used as up-converting phosphors.

关键词： up-conversion NaYF4 hydrothermal method up-convertor solar cells

Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

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Optoelectronics Letters 2014年第3期10卷 202-205页

作者：李天微张建军曹宇黄振华马俊倪牮赵颖 Key Laboratory of photo-electronics thin film devices and technique of Tianjin Key Laboratory of Photo-electronicInformation Science and TechnologyMinistry of Education of ChinaInstitute of Photo-electronic Thin Film Devices and TechniqueNankai University

Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure ***,the microstructural properties of the μc-SiGe:H films are also *** combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.

关键词： Germanium Light absorption Plasma enhanced chemical vapor deposition

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

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Chinese Physics B 2008年第9期17卷 3448-3452页

作者：张丽平张建军尚泽仁胡增鑫耿新华赵颖 institute of photo-electronics thin film devices and technique Nankai UniversityTianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology Laboratory of Opto-electronic Information Science and Technology (Nankai UniversityTianjin University)Chinese Ministry of Education

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I^TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.

关键词： SiGe:H thin film plasma assisted RTCVD growth rates optoelectronics property