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Solution-based metal induced crystallization of a-Si

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Chinese Physics B 2009年第3期18卷 1237-1241页

作者：吴春亚李学冬赵淑云李娟孟志国熊绍珍张芳 institute of photo-electronics Nankai University The Tianjin Key Laboratory for photo-electronic thin film devices and Technology Key Laboratory of Opto-electronic Information Science and Technology(Nankai University and Tianjin University) the Ministry of Education National High Technology Research and Development Center the Ministry of Science and Technology

This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.

关键词： Ni-salt source metal induced crystallization (MIC) poly-Si TFT

Model reduction of fractional impedance spectra for time–frequency analysis of batteries, fuel cells, and supercapacitors

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Carbon Energy 2024年第1期6卷 108-141页

作者： Weiheng Li Qiu-An Huang Yuxuan Bai Jia Wang Linlin Wang Yuyu Liu Yufeng Zhao Xifei Li Jiujun Zhang institute for Sustainable Energy/College of Sciences Shanghai UniversityShanghaiChina Shanxi Key Laboratory of Nanomaterials and Nanotechnology School of Mechanical and Electrical EngineeringXi'an University of Architecture and TechnologyXi'anShaanxiChina Xi'an Key Laboratory of New Energy Materials and devices School of Materials Science and EngineeringInstitute of Advanced Electrochemical EnergyXi'an University of TechnologyXi'anShaanxiChina

Joint time–frequency analysis is an emerging method for interpreting the underlying physics in fuel cells,batteries,and *** increase the reliability of time–frequency analysis,a theoretical correlation between frequency-domain stationary analysis and time-domain transient analysis is urgently *** present work formularizes a thorough model reduction of fractional impedance spectra for electrochemical energy devices involving not only the model reduction from fractional-order models to integer-order models and from high-to low-order RC circuits but also insight into the evolution of the characteristic time constants during the whole reduction *** following work has been carried out:(i)the model-reduction theory is addressed for typical Warburg elements and RC circuits based on the continued fraction expansion theory and the response error minimization technique,respectively;(ii)the order effect on the model reduction of typical Warburg elements is quantitatively evaluated by time–frequency analysis;(iii)the results of time–frequency analysis are confirmed to be useful to determine the reduction order in terms of the kinetic information needed to be captured;and(iv)the results of time–frequency analysis are validated for the model reduction of fractional impedance spectra for lithium-ion batteries,supercapacitors,and solid oxide fuel *** turn,the numerical validation has demonstrated the powerful function of the joint time–frequency *** thorough model reduction of fractional impedance spectra addressed in the present work not only clarifies the relationship between time-domain transient analysis and frequency-domain stationary analysis but also enhances the reliability of the joint time–frequency analysis for electrochemical energy devices.

关键词： battery,fuel cell,supercapacitor fractional impedance spectroscopy model reduction time-frequency analysis

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

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Chinese Physics B 2020年第3期29卷 480-487页

作者： Jun-Fan Chen Sheng-Sheng Zhao Ling-Ling Yan Hui-Zhi Ren Can Han De-Kun Zhang Chang-Chun Wei Guang-Cai Wang Guo-Fu Hou § Ying Zhao Xiao-Dan Zhang institute of photoelectronic thin film devices and Technology of Nankai University Tianjin 300350China Key Laboratory of photoelectronic thin film devices and Technology of Tianjin Tianjin 300350China Engineering Center of thin film photoelectronic Technology of Ministry of Education Tianjin 300350China Sino-Euro Joint Research Center for photovoltaic Power Generation of Tianjin Tianjin 300350China

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_(oc) of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.

关键词： a-SiO_x:H orientated wafers silicon heterojunction

Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

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Chinese Physics B 2006年第5期15卷 1110-1113页

作者：高艳涛张晓丹赵颖孙健朱峰魏长春陈飞 institute of photo-Electronic thin film devices and Technology Nankai University Tianjin 300071 China Tianjin Key Laboratory of photo-Electronic thin film devices and Technology Tianjin 300071 China

Hydrogenated microcrystalline silicon （μc-Si：H） films are fabricated by very high frequency plasma enhanced chemical vapour deposition （VHF-PECVD） at a silane concentration of 7% and a varying total gas flow rate （H2＋SiH4）. Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction （Xc） and dark conductivity decrease. And the intensity of （220） peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy （OES）.

关键词： very high frequency plasma enhanced chemical vapour deposition intrinsic microcrystalline silicon gas flow rate

Phase-Field Simulation of Sintering Process:A Review

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Computer Modeling in Engineering & Sciences 2024年第8期140卷 1165-1204页

作者： Ming Xue Min Yi State Key Laboratory ofMechanics and Control forAerospace Structures&institute for Frontier Science&Key Laboratory for Intelligent Nano Materials and devices of Ministry of Education&College of Aerospace Engineering Nanjing University of Aeronautics and Astronautics(NUAA)Nanjing210016China

Sintering,a well-established technique in powder metallurgy,plays a critical role in the processing of high melting point materials.A comprehensive understanding of structural changes during the sintering process is essential for effective product *** phase-field method stands out for its unique ability to simulate these structural *** its widespread application,there is a notable absence of literature reviews focused on its usage in sintering ***,this paper addresses this gap by reviewing the latest advancements in phase-field sintering models,covering approaches based on energy,grand potential,and entropy *** characteristics of various models are extensively discussed,with a specific emphasis on energy-based models incorporating considerations such as interface energy anisotropy,tensor-form diffusion mechanisms,and various forms of rigid particle motion during ***,the paper offers a concise summary of phase-field sintering models that integrate with other physical fields,including stress/strain fields,viscous flow,temperature field,and external electric *** conclusion,the paper provides a succinct overview of the entire content and delineates potential avenues for future research.

关键词： Phase-field model review sintering additive manufacturing

Progress on the antiferromagnetic topological insulator MnBi2Te4

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National Science Review 2024年第2期11卷 33-49页

作者： Shuai Li Tianyu Liu Chang Liu Yayu Wang Hai-Zhou Lu X.C.Xie Department of Physics Harbin Institute of Technology Shenzhen institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology(SUSTech) Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen Key Laboratory of Quantum Science and Engineering International Quantum Academy Beijing Academy of Quantum Information Sciences Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano devices Department of Physics Renmin University of China State Key Laboratory of Low Dimensional Quantum Physics Department of PhysicsTsinghua University Frontier Science Center for Quantum Information Hefei National Laboratory International Center for Quantum Materials School of Physics Peking University institute for Nanoelectronic devices and Quantum Computing Fudan University

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed maTher physics. They represent a new class of materials exhibiting nontrivial topological phases,and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic *** particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

关键词： MnBi2Te4 magnetic topological insulator antiferromagnetic quantum anomalous Hall effect axion insulator

Effects of guanidinium cations on structural,optoelectronic and photovoltaic properties of perovskites

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Journal of Energy Chemistry 2021年第7期30卷 48-54页

作者： Yi Ding Yan Wu Ying Tian Yuzeng Xu Minna Hou Bo Zhou Jingshan Luo Guofu Hou Ying Zhao Xiaodan Zhang institute of photoelectronic thin film devices and Technolog Key Laboratory of Photoelectronic Thin Film Devices and Technology(Tianjin)Engineering Research Center of Thin Film Photoelectronic Technology(Ministry of Education)Renewable Energy Conversion and Storage CenterNankai UniversityTianjin 300072China institute of Modern Physics Shaanxi Key Laboratory for Theoretical Physics FrontiersNorthwest UniversityXi’an 710069ShaanxiChina

Guanidinium(GA)cations are intentionally introduced in MAPbI_(3) perovskite by considering its potential capability of stabilizing the material through plenty of hydrogen bonds and mitigating hysteresis because of the zero dipole *** configurations of GA cation in film and its effects on structural,optoelectronic and photovoltaic properties of perovskite have been comprehensively studied by systematically modulating the GA *** has been demonstrated that moderate GA cations can effectively passivate the defect surrounding perovskite grains,yielding an enhanced efficiency as high as~19,2%in a p-i-n type planar solar cells with the GA ratio of 15%.Further increasing the GA ratio deteriorates device performance,as extra GA cations hinder grain growth and thus reduce the grain size,which facilitates the defect generation around the enhanced ***,a new two-dimensional(2 D)layered perovskite phase that features alternating GA and MA cations in the interlayer space(ACI)appears ultimately,while the ACI phase typically suffers from slow charge transportation across the parallel PbI2 octahedral layers separated by large A-site cations.

关键词： Perovskite solar cell Guanidinium DFT calculations 2D perovskite Phase separation

The pitfalls in electrocatalytic nitrogen reduction for ammonia synthesis

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Journal of Energy Chemistry 2021年第10期30卷 149-154,I0005页

作者： Huimin Liu Néstor Guijarro Jingshan Luo institute of photoelectronic thin film devices and Technology Solar Energy Research CenterKey Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinMinistry of Education Engineering Research Center of Thin Film Photoelectronic TechnologyRenewable Energy Conversion and Storage CenterNankai UniversityTianjin 300350China institute of Electrochemistry University of AlicanteAlicante E-03080Spain

Ammonia synthesis by electrocatalytic nitrogen reduction reaction(EC-NRR)has gained momentum in recent years fueled by its potential to operate at ambient conditions,unlike the highly energyintensive yet long-standing Haber-Bosch ***,the large disparity of the yields and Faradic efficiencies reported for EC-NRR raises serious concerns about the reliability of the experimental *** this perspective,we elaborate on the potential sources of error when assessing EC-NRR and update the testing protocols to circumvent them,and more importantly,we pose a general call for consensus on ammonia production analysis and reporting to lay the solid foundations that this burgeoning field requires to thrive.

关键词： Electrocatalytic nitrogen reduction Ammonia synthesis Pitfalls Standard protocols

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

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Journal of Materiomics 2024年第1期10卷 1-6页

作者： Ruitao Jia Fangzhu Qing Shurong Wang Yuting Hou Changqing Shen Feng Hao Yang Yang Hongwei Zhu Xuesong Li School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu610054China State Key Laboratory of Electronic thin films and Integrated devices University of Electronic Science and Technology of ChinaChengdu610054China Shenzhen institute for Advanced Study University of Electronic Science and Technology of ChinaShenzhen518110China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu610054China PipeChina Southwest Pipeline Co. Ltd.Chengdu610041China State Key Lab of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China

Chemical vapor deposition(CVD)is the most promising method for the preparation of high-quality and large-area graphene films,especially the epitaxial growth of graphene on large-area single-crystal Cu *** single-crystal Cu foils are normally achieved by thermally annealing the commercial poly-crystalline Cu foils,their size and therefore the size of graphene films grown on them are limited to the size of the reaction *** report a simple and feasible method to prepare large-area Cu foils with decimeter grains by thermally annealing the rolled-up Cu foils,where the Cu layers are separated by thin porous carbon fiber *** carbon fiber cloths prevent Cu layers from sticking to each other at high temperatures while do not block the gas *** such a way,the utilization efficiency of the reaction chamber is significantly improved,e.g.,0.2 m×(1e2)m Cu foils can be processed even in a 5 cm diameter quartz tube ***-quality graphene films grown on such Cu foils are then *** method may be suitable for the annealing of other metal foils to enlarge grain size and the synthesis of other two-dimensional materials on them such as h-BN.

关键词： Graphene Single-crystal Cu Chemical vapor deposition Synthesis