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检索条件"机构=Institute of Nanotechnology of Microelectronics of the RAS"
77 条 记 录,以下是1-10 订阅
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
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Chinese Physics B 2015年 第2期24卷 362-367页
作者: 马晓华 张亚嫚 王鑫华 袁婷婷 庞磊 陈伟伟 刘新宇 School of Advanced Materials and nanotechnology Xidian University Key Laboratory of microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences
In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors(HEMTs),featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are *** HEMT with a thic... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
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Chinese Physics B 2016年 第11期25卷 446-452页
作者: 耿苗 李培咸 罗卫军 孙朋朋 张蓉 马晓华 School of Advanced Materials and nanotechnology Xidian University Xi'an 710071 China Key Laboratory of microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(HEMT) *** new extraction method is verified by comparing the simulated S-parameters with the mea... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Fabrication of a 256-bits organic memory by soft x-ray lithography
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Chinese Physics B 2010年 第5期19卷 499-504页
作者: 刘兴华 鲁闻生 姬濯宇 涂德钰 朱效立 谢常青 刘明 Microfabrication and nanotechnology Lab Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Colloid and Interface Science Center of Molecular SciencesInstitute of ChemistryChinese Academy of Sciences
This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
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Chinese Physics B 2014年 第2期23卷 452-456页
作者: 马晓华 吕敏 庞磊 姜元祺 杨靖治 陈伟伟 刘新宇 School of Advanced Materials and nanotechnology Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Key Laboratory of microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
The kink effect in current-voltage (IV) characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current (DC) IV measurements in a GaN-based HEMT with an AlGaN back ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
On-wafer de-embedding techniques from 0.1 to 110 GHz
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Journal of Semiconductors 2015年 第5期36卷 72-80页
作者: 汤国平 姚鸿飞 马晓华 金智 刘新宇 School of Advanced Materials and nanotechnology Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University institute of microelectronics Chinese Academy of Sciences
On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line (TRL) and line-reflect-match (LRM) de-embedding algorithms, when the input and output por... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Fabrication and characteristics of rutile TiO_2 nanoparticles induced by laser ablation
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中国有色金属学会会刊:英文版 2009年 第S3期19卷 743-747页
作者: 刘培生 蔡伟平 万里兮 石明达 罗向东 景为平 Jiangsu Key Laboratory of ASCI Design Nantong University Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and NanotechnologyInstitute of Solid State PhysicsChinese Academy of Sciences institute of microelectronics Chinese Academy of Sciences Nantong Fujitsu microelectronics Co.Ltd
The laser ablation technique was employed to prepare TiO2 nanoparticles by pulsed laser ablation of a titanium target immersed in the poly-(vinylpyrrolidone) solution using wavelength of 1 064 nm. The as-prepared prod... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
AlGaN/GaN high electron mobility transistor with Al_2O_3+BCB passivation
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Chinese Physics B 2015年 第11期24卷 468-472页
作者: 张昇 魏珂 余乐 刘果果 黄森 王鑫华 庞磊 郑英奎 李艳奎 马晓华 孙兵 刘新宇 School of Advanced Materials and nanotechnology Key Laboratory of Wide Bandgap Semiconductor Materials and DevicesXidian University Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences
In this paper, Al2O3 ultrathin film used as the surface passivation layer for A1GaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induc... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors
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Chinese Physics B 2014年 第1期23卷 395-398页
作者: 马晓华 姜元祺 王鑫华 吕敏 张霍 陈伟伟 刘新宇 School of Advanced Materials and nanotechnology Xidian University Xi' an 710071 China Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 71007 l China Key Laboratory of microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a posit... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
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Chinese Physics B 2014年 第5期23卷 461-464页
作者: 袁昊 汤晓燕 张义门 张玉明 宋庆文 杨霏 吴昊 School of microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University School of Advanced Materials and nanotechnology Xidian University The National Smart Grid Research institute
Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light
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Science China(Information Sciences) 2023年 第2期66卷 191-197页
作者: Yilin CHEN Qing ZHU Jiejie ZHU Minhan MI Meng ZHANG Yuwei ZHOU Ziyue ZHAO Xiaohua MA Yue HAO School of Advanced Materials and nanotechnology Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University School of microelectronics Xidian University Xidian University Guangzhou institute of Technology
In this study, the negative shift of the threshold voltage(VTH) and degradation of the leakage current triggered by the ultraviolet(UV) light(375 nm) have been investigated when a large reverse gateto-drain voltage wa... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论