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检索条件"机构=Institute of Nano Electronic Engineering (INEE)"
1573 条 记 录,以下是1-10 订阅
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Dielectric-ion-conductive ZnNb2O6 layer enabling rapid desolvation and diffusion for dendrite-free Zn metal batteries
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Journal of Energy Chemistry 2025年 第1期100卷 693-701页
作者: Haifeng Yang Jian Wang Panpan Zhang Xiaomin Cheng Qinghua Guan Jing Dong Bixian Chen Lujie Jia Jing Zhang Yongzheng Zhang Yunjian Liu Hongzhen Lin School of Materials Science and engineering Jiangsu University i-Lab & CAS Key Laboratory of nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Helmholtz institute Ulm (HIU) Karlsruhe institute of Technology (KIT) School of Materials Science and engineering Xi'an University of Technology State Key Laboratory of Chemical engineering East China University of Science and Technology
Rechargeable aqueous zinc-metal batteries (AZMBs) are promising candidates for large-scale energy storage systems due to their low cost and high ***,their performance and sustainability are significantly hindered by... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论
基于铜网栅的高性能可见-红外宽波段透明导电材料及在透明电磁屏蔽与加热领域的应用(英文)
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Science China Materials 2025年
作者: 李腾飞 陈小连 徐兆华 聂书红 徐文亚 袁伟 徐速 张硕 裴芳芳 苏文明 崔铮 School of nano-Tech and nano-Bionics University of Science and Technology of China Printable electronics Research Center Nano-Devices and Materials Division Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University
目前,用于光电器件和智能窗的可见光透明导电材料已经取得了快速发展.然而,在红外波段,由于透光率和导电性之间的相互制约,可见-红外宽波段透明导电材料的发展受到了限制.为此,本研究提出了一种无损伤的间接转移技术,将剥离后的独立铜...
来源: 同方期刊数据库 同方期刊数据库 评论
Advances in Graphene‑Based Electrode for Triboelectric nanogenerator
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nano-Micro Letters 2025年 第1期17卷 378-403页
作者: Bin Xie Yuanhui Guo Yun Chen Hao Zhang Jiawei Xiao Maoxiang Hou Huilong Liu Li Ma Xin Chen Chingping Wong State Key Laboratory of Precision electronic Manufacturing Technology and Equipment Guangdong University of TechnologyGuangzhou 510006People’s Republic of China School of Electromechanical engineering Guangdong University of TechnologyGuangzhou 510006People’s Republic of China School of Materials Science and engineering Georgia Institute of TechnologyAtlantaGA 30332USA
With the continuous development of wearable electronics,wireless sensor networks and other micro-electronic devices,there is an increasingly urgent need for miniature,flexible and efficient nanopower generation *** na... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection
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Chinese Physics B 2015年 第6期24卷 607-612页
作者: Tijjani Adam U.HAshim Th S.Dhahi institute of nano electronic engineering(inee) Universiti Malaysia Perlis(UniMAP) Physics Department College of Education for Pure ScienceBasra University
A functionalized silicon nanowire field-effect transistor (SiNW FET) was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method wi... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A Rapid Adaptation Approach for Dynamic Air‑Writing Recognition Using Wearable Wristbands with Self‑Supervised Contrastive Learning
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nano-Micro Letters 2025年 第2期17卷 417-431页
作者: Yunjian Guo Kunpeng Li Wei Yue Nam‑Young Kim Yang Li Guozhen Shen Jong‑Chul Lee Department of electronic Convergence engineering Kwangwoon UniversitySeoul 01897South Korea Radio Frequency Integrated Circuit(RFIC)Bio Centre Kwangwoon UniversitySeoul 01897South Korea Department of electronic engineering Kwangwoon UniversitySeoul 01897South Korea School of Microelectronics Shandong UniversityJinan 250101People’s Republic of China State Key Laboratory of Integrated Chips and Systems Fudan UniversityShanghai 200433People’s Republic of China School of Integrated Circuits and electronics Beijing Institute of TechnologyBeijing 100081People’s Republic of China
Wearable wristband systems leverage deep learning to revolutionize hand gesture recognition in daily *** existing approaches that often focus on static gestures and require extensive labeled data,the proposed wearable... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Flexible Strain Sensors with Ultra‑High Sensitivity and Wide Range Enabled by Crack‑Modulated Electrical Pathways
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nano-Micro Letters 2025年 第3期17卷 246-264页
作者: Yunzhao Bai Yunlei Zhou Xuanyu Wu Mengfei Yin Liting Yin Shiyuan Qu Fan Zhang Kan Li YongAn Huang State Key Laboratory of Intelligent Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China Flexible electronics Research Center Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China Hangzhou institute of Technology Xidian UniversityHangzhou 311200People’s Republic of China School of Mechano‑electronic engineering Xidian UniversityXi’an 710071People’s Republic of China Department of Aerospace and Mechanical engineering University of Southern CaliforniaLos AngelesCA 90089USA
This study presents a breakthrough in flexible strain sensor technology with the development of an ultrahigh sensitivity and wide-range sensor,addressing the critical challenge of reconciling sensitivity with measurem... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Force and impulse multi-sensor based on flexible gate dielectric field effect transistor
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International Journal of Minerals,Metallurgy and Materials 2025年 第1期32卷 214-220页
作者: Chao Tan Junling Lü Chunchi Zhang Dong Liang Lei Yang Zegao Wang College of Materials Science and engineering Sichuan UniversityChengdu 610065China The 54th Research institute of China electronics Technology Group Corporation Shijiazhuang 050081China
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other ***-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with na... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Direct Photolithography of WO_(x)nanoparticles for High‑Resolution Non‑Emissive Displays
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nano-Micro Letters 2025年 第3期17卷 297-309页
作者: Chang Gu Guojian Yang Wenxuan Wang Aiyan Shi Wenjuan Fang Lei Qian Xiaofei Hu Ting Zhang Chaoyu Xiang Yu‑Mo Zhang Laboratory of Optoelectronic Information Technology and Devices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201People’s Republic of China Hangzhou Bay Laboratory of Advanced nano‑Optoelectronic Materials and Devices Qianwan Institute of CNITECHNingbo 315336People’s Republic of China Smart Materials for Architecture Research Lab Innovation Center of Yangtze River DeltaZhejiang UniversityJiaxing 314100People’s Republic of China University of Science and Technology of China Hefei 230026People’s Republic of China State Key Lab of Supramolecular Structure and Materials College of ChemistryJilin UniversityChangchun 130012People’s Republic of China
High-resolution non-emissive displays based on electrochromic tungsten oxides(WOx)are crucial for future near-eye virtual/augmented reality interactions,given their impressive attributes such as high environmental sta... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Optimization Strategies of Na_(3)V_(2)(PO_(4))_(3) Cathode Materials for Sodium‑Ion Batteries
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nano-Micro Letters 2025年 第2期17卷 204-251页
作者: Jiawen Hu Xinwei Li Qianqian Liang Li Xu Changsheng Ding Yu Liu Yanfeng Gao School of Materials Science and engineering Shanghai UniversityShanghai 200444People’s Republic of China Shanghai institute of Ceramics Chinese Academy of SciencesShanghai 200050People’s Republic of China
Na_(3)V_(2)(PO_(4))_(3)(NVP)has garnered great attentions as a prospective cathode material for sodium-ion batteries(SIBs)by virtue of its decent theoretical capacity,superior ion conductivity and high structural ***,... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode
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Chinese Physics B 2015年 第12期24卷 572-577页
作者: 刘炜 赵德刚 江德生 陈平 刘宗顺 朱建军 李翔 梁锋 刘建平 杨辉 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences School of electronic and Electrical engineering Chongqing University of Arts and Sciences Suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences
In GaN/GaN multiple quantum well(MQW) green light-emitting diodes(LEDs) with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus inject... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论