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Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

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Journal of Semiconductors 2010年第9期31卷 37-40页

作者：张世锋丁扣宝韩雁韩成功胡佳贤张斌 institute of microelectronics & photoelectronics Zhejiang University

Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the *** different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simulations and charge pumping *** first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift *** of the mechanisms are enhanced with increasing avalanche breakdown current.

关键词： NLDMOS avalanche breakdown degradation charge-pumping

A 65-nm low-power high-linearity Σ△ ADC for audio applications

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Science China(Information Sciences) 2014年第4期57卷 201-207页

作者： LIAO Lu SUN Ying HAN Yan LIANG Guo LUO Hao LIU XiaoPeng institute of microelectronics and photoelectronics Zhejiang University

This paper presents a low-power high linearity Σ△ analog-to-digital converter(ADC)for audio *** adopting low noise large output swing operational amplifiers in a 2-1 cascaded modulator,not only can the noise floor be reduced,but the input signal range can also be enlarged.A low-power,area-efficient digital decimation filter was also designed to decrease the area and the power *** ADC was fabricated in the SMIC 65 nm single-poly-eight-metal(1P8M)mixed-signal complementary metal-oxide-semiconductor(CMOS)process with a die area of 0.36 *** results showed that a 90 dB peak signal to noise plus distortion ratio(SNDR)and a 93 dB dynamic range(DR)were achieved over the 22.05 kHz audio *** power dissipation was 2.2 mW from 1.2 V power supply,which is suitable for audio codec applications.

关键词： modulator decimation filter low-power linearity audio ADC

Design and FPGA verification of a novel reliable real-time data transfer system

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2008年第10期9卷 1406-1410页

作者： Yu-ping LIAN Yan HAN Ming-xu HUO Jin-long CHEN Yan ZHANG institute of microelectronics and photoelectronics Zhejiang University Hangzhou 310027 China

Considering the increasing use of information technology with established standards, such as TCP/IP and XML in modem industrial automation, we present a high cost performance solution with FPGA （field programmable gate array） implementation of a novel reliable real-time data transfer system based on EPA （Ethemet for plant automation） protocol and IEEE 1588 standard. This combination can provide more predictable and real-time communication between automation equipments and precise synchronization between devices. The designed EPA system has been verified on Xilinx Spartan3 XC3S1500 and it consumed 75% of the total slices. The experimental results show that the novel industrial control system achieves high synchronization precision and provides a 1.59-ps standard deviation between the master device and the slave ones. Such a real-time data transfer system is an excellent candidate for automation equipments which require precise synchronization based on Ethemet at a comparatively low price.

关键词： Ethemet for plant automation (EPA) IEEE 1588 Precise synchronization Real-time data transfer

A 65-nm low-noise low-costΣ△modulator for audio applications

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Journal of Semiconductors 2012年第2期33卷 82-86页

作者： Liang Guo Liao Lu Luo Hao Liu Xiaopeng Han Xiaoxia Han Yan institute of microelectronics&photoelectronics Zhejiang UniversityHangzhou 310027China

This paper introduces a low-noise low-costΣA modulator for digital audio analog-to-digital conversion. By adopting a low-noise large-output swing operation amplifier,not only is the flicker noise greatly inhibited,but also the power consumption is *** the area cost is relatively *** modulator was implemented in a SMIC standard 65-nm CMOS *** results show it can achieve 96 dB peak signal-to-noise plus distortion ratio（SNDR） and 105 dB dynamic range（DR） over the 22.05-kHz audio band and occupies 0.16 mm^2. The power consumption of the proposed modulator is 4.9 mW from a 2.5 V power supply,which is suitable for high-performance,low-cost audio codec applications.

关键词： Σ△modulator low-noise low-cost analog-to-digital converter

An 18-bit high performance audio ∑-△D/A converter

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Journal of Semiconductors 2010年第7期31卷 79-84页

作者：张昊黄小伟韩雁张泽松韩晓霞王昊梁国 institute of microelectronics and photoelectronics Zhejiang University CISD Institute of Microelectronic CAD Department of Electronic Engineering City University of Hong Kong

A multi-bit quantized high performance sigma-delta（Σ-Δ） audio DAC is *** to its singlebit counterpart,the multi-bit quantization offers many advantages,such as simplerΣ-Δmodulator circuit,lower clock frequency and smaller spurious *** the data weighted average（DWA） mismatch shaping algorithm,element mismatch errors induced by multi-bit quantization can be pushed out of the signal band,hence the noise floor inside the signal band is greatly *** cope with the crosstalk between digital and analog circuits,every analog component is surrounded by a guard ring,which is an innovative *** 18-bit DAC with the above techniques,which is implemented in a 0.18μm mixed-signal CMOS process,occupies a core area of 1.86 mm^*** measured dynamic range（DR） and peak SNDR are 96 dB and 88 dB,respectively.

关键词： digital-to-analog converter Σ-Δmodulator multi-bit quantization switched-capacitor

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

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Chinese Physics Letters 2006年第8期23卷 2259-2261页

作者：徐传明孙云周琳李凤岩张力薛玉明周志强何青 institute of photoelectronics Nankai University Tianjin 300071

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.

关键词： CUINSE2 LAYERS MORPHOLOGY DIFFUSION PRESSURE

A high-performance,low-power ∑△ ADC for digital audio applications

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Journal of Semiconductors 2010年第5期31卷 114-120页

作者：罗豪韩雁张泽松韩晓霞马绍宇应鹏朱大中 institute of microelectronics and photoelectronics Zhejiang University Department of Electronic Engineering City University of Hong Kong

A high-performance low-powerΣΔanalog-to-digital converter（ADC） for digital audio applications is *** consists of a 2-1 cascadedΣΔmodulator and a decimation *** design optimizations are implemented in the system design,circuit implementation and layout design,including a high-overload-level coefficient-optimized modulator architecture,a power-efficient class A/AB operational transconductance amplifier,as well as a multi-stage decimation filter conserving area and power *** ADC is implemented in the SMIC 0.18-μm CMOS mixed-signal *** experimental chip achieves a peak signal-to-noise-plus-distortion ratio of 90 dB and a dynamic range of 94 dB over 22.05-kHz audio band and occupies 2.1 mm^2,which dissipates only 2.1 mA quiescent current in the analog circuits.

关键词： ΣΔ modulator decimation filter low power audio analog-to-digital converter

Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

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Journal of Semiconductors 2009年第3期30卷 15-18页

作者：朱夏明吴惠桢王双江张莹莹蔡春锋斯剑霄原子健杜晓阳董树荣 Department of Physics Zhejiang University State Key Laboratory of Modern Optical Instrumentations Zhejiang University ESD Laboratory Institute of Microelectronics and PhotoelectronicsZhejiang University

Using NH3 as nitrogen source gas, N-doped ZnO （ZnO：N） thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO：N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO：N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

关键词： ZnO N-doping resistivity photoluminescence thin film transistors

A 0.8 V low power low phase-noise PLL

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Journal of Semiconductors 2010年第8期31卷 150-154页

作者：韩雁梁筱周海峰谢银芳黄威森 institute of microelectronics and photoelectronics Zhejiang University School of Information Science and Technology Hangzhou Normal University Department of Information Science and Electronic Engineering Zhejiang University Semiconductor Manufacturing International Corporation

A low power and low phase noise phase-locked loop（PLL） design for low voltage（0.8 V） applications is *** voltage controlled oscillator（VCO） operates from a 0.5 V voltage supply,while the other blocks operate from a 0.8 V supply.A differential NMOS-only topology is adopted for the oscillator,a modified precharge topology is applied in the phase-frequency detector（PFD）,and a new feedback structure is utilized in the charge pump（CP） for ultra-low voltage *** divider adopts the extended true single phase clock DFF in order to operate in the high frequency region and save circuit area and *** addition,several novel design techniques,such as removing the tail current source,are demonstrated to cut down the phase *** in the SMIC 0.13μm RF CMOS process and operated at 0.8 V supply voltage,the PLL measures a phase noise of-112.4 dBc/Hz at an offset frequency of 1 MHz from the carrier and a frequency range of 3.166-3.383 *** improved PFD and the novel CP dissipate 0.39 mW power from a 0.8 V *** occupied chip area of the PFD and CP is 100×100μm^*** chip occupies 0.63 mm^2,and draws less than 6.54 mW from a 0.8 V supply.

关键词： phase-locked loop voltage control oscillator low voltage low power low phase noise