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Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

Nuclear Science and Techniques 2024年第5期35卷 109-121页

作者： Yang Jiao Li-Hua Mo Jin-Hu Yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei Zhao Bo Li You-Mei Sun Pei-Xiong Zhao Jie Liu institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China University of Chinese Academy of Science Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China China Electronics Technology Group Corporation No.58 Research institute Wuxi 214000China Beijing microelectronics Technology institute Beijing 100084China institute of microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

关键词： 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) Charge collection Inverse cosine law

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Eye-safe intra-cavity diamond cascaded Raman laser with high peak-power and narrow linewidth

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Chinese Optics Letters 2024年第4期22卷 60-65页

作者：米晓波林超男胡永生马后杰何九如马凤英樊莉单崇新 School of Physics and microelectronics Zhengzhou UniversityZhengzhou 450001China College of Physics Science and Technology Institute of Applied Photonic TechnologyYangzhou UniversityYangzhou 225002China

The 1.4–1.8μm eye-safe lasers have been widely used in the fields of laser medicine and laser detection and ranging.The diamond Raman lasers are capable of delivering excellent characteristics,such as good beam quality concomitantly with high output power.The intra-cavity diamond Raman lasers have the advantages of compactness and low Raman thresholds compared to the external-cavity Raman lasers.However,to date,the intra-cavity diamond cascaded Raman lasers in the spectral region of the eye-safe laser have an output power of only a few hundred milliwatts.A 1485 nm Nd:YVO_4/diamond intra-cavity cascaded Raman laser is reported in this paper.The mode matching and stability of the cavity were optimally designed by a V-shaped folded cavity,which yielded an average output power of up to 2.2 W at a pulse repetition frequency of 50 kHz with a diode to second-Stokes conversion efficiency of 8.1%.Meanwhile,the pulse width of the second-Stokes laser was drastically reduced from 60 ns of the fundamental laser to 1.1 ns,which resulted in a high peak power of 40 kW.The device also exhibited single longitudinal mode with a narrow spectral width of<0.02 nm.

关键词： diamond intra-cavity Raman lasers eye-safe lasers high peak-power

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14-bit SAR ADC with On-Chip Digital Bubble Sorting Calibration Technology

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Chinese Journal of Electronics 2024年

作者： Hua FAN Zhuorui CHEN Tongrui XU Franco Maloberti Qi WEI Quanyuan FENG School of Integrated Circuit Science and Engineering (Exemplary School of microelectronics) University of Electronic Science and Technology of China (UESTC) Shenzhen institute for Advanced Study Chongqing institute of microelectronics Industry Technology Department of Electrical Computer and Biomedical Engineering University of Pavia Department of Precision Instrument Tsinghua University institute of microelectronics Southwest Jiaotong University

This article designs a 14-bit successive approximation register analog-to-digital converter(SAR ADC).A novel digital bubble sorting calibration method is proposed and applied to eliminate the effect of capacitor mismatch on the linearity of the SAR ADC. To reduce the number of capacitors, a hybrid architecture of a high 8-bit binary-weighted capacitor array and a low 6-bit resistor array is adopted by the digital-to-analog(DAC). The common-mode voltage VCM-based switching scheme is chosen to reduce the switching energy and area of the DAC. The time-domain comparator is employed to obtain lower power consumption. Sampling is performed through a gate voltage bootstrapped switch to reduce the nonlinear errors introduced when sampling the input signal. Moreover, the SAR logic and the whole calibration is totally implemented on-chip through digital integrated circuit(IC) tools such as Design Compiler, IC compiler, etc. Finally, a prototype is designed and implemented using 0.18 μm Bipolar-complementary metal oxide semiconductor(CMOS)-double-diffused MOS 1.8 V CMOS technology. The measurement results show that the SAR ADC with on-chip bubble sorting calibration method achieves the signal-to-noise-and-distortion ratio of 69.75 dB and the spurious-free dynamic range of 83.77 dB.

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基于准二维钙钛矿的高稳定电阻随机存储器

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Science China Materials 2024年第3期67卷 879-886页

作者：陈享潘孝鑫蒋博闻危家昀龙研汤杰李晓庆张军段金霞桃李马国坤王浩 institute of microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China Hubei Yangtze Memory Laboratories Wuhan 430205China

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层... 详细信息

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层的Al/(PEA)_(2)-MAPb_(2)I_(3)Br_(4)/SnO_(2)/氧化铟锡(ITO)非易失性RRAM,该器件表现出了出色且高度稳定的双极性电阻切换特性.此外,该器件表现出约为10~4的开/关比,低SET电压(约0.8 V),并且具有相对稳定的耐久性(大于1000次循环).高阻态和低阻态的传导机制分别是空间电荷限流传导和欧姆传导.此外,由于苯乙胺分子的疏水性,该器件在40%湿度下放置90天依然表现出显著的阻变特性.因此,这种高性能、稳定的RRAM为未来存储器的商业化提供了可能性.

关键词： resistive random access memory organic-inorganic hybrid quasi-two-dimensional high stability

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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

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Science China(Information Sciences) 2024年第5期67卷 335-336页

作者： Yang LI Danyang YAO Yan LIU Zhi JIANG Ruiqing WANG Xu RAN Jiuren ZHOU Qikun WANG Guoqiang WU Genquan HAN School of microelectronics Xidian University Hangzhou institute of Technology Xidian University Ultratrend Technologies Inc. Emerging Device and Chip Laboratory Institute of Technological Sciences Wuhan University

Aluminum scandium nitride(AlScN), a Ⅲ-Ⅴ ternary semiconductor, has been recognized as an innovative and promising ferroelectric material in emerging research. Among the characteristics of ferroelectric material, fatigue resistance is a critical measure of the endurance of ferroelectric films and represents an inherent challenge in the pursuit of practical applications.

关键词： Physical vapor deposition

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Emerging materials and transistors for integrated circuits

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National Science Review 2024年第3期11卷 7-8页

作者： Ming Liu Lian-Mao Peng Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of Electronics Peking University

The device technology for integrated circuits(ICs) has received a great deal of attention in the past decade since the mainstream silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistor(FET) for modern ICs had been encountering development bottlenecks due to the combination of power constraints, physics, cost and fabrication processes.

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A high precision two-axis GMR angular sensor manufactured by post-annealing

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Science China(Information Sciences) 2024年第6期67卷 465-466页

作者： Zitong ZHOU Zhiqiang CAO Shaohua YAN Xiaolong WANG Libo XIE Shiyang LU Dapeng ZHU Qunwen LENG Weisheng ZHAO School of Integrated Circuit Science and Engineering Beihang University Beihang Qingdao microelectronics Research institute Beihang University National Key Lab of Spintronics Institute of International InnovationBeihang University

Angle sensors are widely used in numerous fields such as industry,military,medical care,and the Internet of Things(IoT)[1].Magnetoresistance angle sensors have become a mainstream approach for angle measurement becaus... 详细信息

关键词： Annealing

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SHEL:a semantically enhanced hardware-friendly entity linking method

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High Technology Letters 2024年第1期30卷 13-22页

作者：亓东林 CHEN Shudong DU Rong TONG Da YU Yong institute of microelectronics of Chinese Academy of Sciences Beijing 100029P.R.China University of Chinese Academy of Sciences Beijing 100190P.R.China

With the help of pre-trained language models,the accuracy of the entity linking task has made great strides in recent years.However,most models with excellent performance require fine-tuning on a large amount of training data using large pre-trained language models,which is a hardware threshold to accomplish this task.Some researchers have achieved competitive results with less training data through ingenious methods,such as utilizing information provided by the named entity recognition model.This paper presents a novel semantic-enhancement-based entity linking approach,named semantically enhanced hardware-friendly entity linking(SHEL),which is designed to be hardware friendly and efficient while maintaining good performance.Specifically,SHEL's semantic enhancement approach consists of three aspects:(1)semantic compression of entity descriptions using a text summarization model;(2)maximizing the capture of mention contexts using asymmetric heuristics;(3)calculating a fixed size mention representation through pooling operations.These series of semantic enhancement methods effectively improve the model's ability to capture semantic information while taking into account the hardware constraints,and significantly improve the model's convergence speed by more than 50%compared with the strong baseline model proposed in this paper.In terms of performance,SHEL is comparable to the previous method,with superior performance on six well-established datasets,even though SHEL is trained using a smaller pre-trained language model as the encoder.

关键词： entity linking(EL) pre-trained models knowledge graph text summarization semantic enhancement

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Preface to Special Topic on Integrated Circuits, Technologies and Applications

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Journal of Semiconductors 2024年第6期45卷 1-2页

作者： Zheng Wang Xiaoyan Gui Lin Cheng Nanjian Wu School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China School of microelectronics Xi’an Jiaotong UniversityXi’an 710049China School of microelectronics University of Science and Technology of ChinaHefei 230026China institute of Semiconductors Chinese Academy of SciencesBeijing 100083China

This Special Topic of the Journal of Semiconductors(JoS)features expanded versions of key articles presented at the 2023 IEEE International Conference on Integrated Circuits Technologies and Applications(ICTA),which was held in Hefei,Anhui,China,from October 27 to 29,2023.IEEE ICTA is an IEEE flagship conference in the field of integrated circuits(IC)in China,which provides a communication platform for sharing the state-of-the-art techniques from experts in the field of ICs.Among the 93 papers presented at ICTA 2023,the Technical Program Committee and the Award Committee have selected 4 high-quality articles to recommend to the Special Topic of JoS,covering a wide range of technical fields,including one paper on RF ICs,two papers on Analog ICs and one paper on Wireline ICs.

关键词： communication ICT Anhui

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Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

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Science China(Information Sciences) 2024年第6期67卷 172-179页

作者： Zizheng LIU Qing ZHANG Xiaohe HUANG Chunsen LIU Peng ZHOU State Key Laboratory of Integrated Chip and Systems School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan University Frontier institute of Chip and System Shanghai Key Lab for Future Computing Hardware and SystemFudan University Shaoxin Laboratory

Semimetallic bismuth（Bi） is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors（FETs）. However, the low melting point of Bi contact（271.5℃） limits its reliable applications. In this study, we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony（Sb） between the Bi contacting layer and the gold（Au） capping layer. The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process（Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃）. Because of the improved contacting layer formed by the semimetal Bi/Sb alloy, the fabricated Bi/Sb/Au-contacted molybdenum sulfide（MoS2） FETs with different gate lengths demonstrated higher on-state current stability after heating treatment than the Bi/Au contact. Because of the Bi/Sb/Au contact and poly（methyl methacrylate） package, the MoS2FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics. The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

关键词： temperature stability semimetallic bismuth contact semimetallic antimony contact MoS$_{2}$ FETs time stability

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