检索结果-南通市图书馆

Broadband nonlinear optical response of graphdiyne for mid-infrared solid-state lasers

Science China(Physics,Mechanics & Astronomy) 2021年第9期64卷 67-74页

作者： MengYu Zong YuQian Zu Jia Guo Zhen Zhang JingJing Liu YanQi Ge Jie Liu LiangBi Su Shandong Provincial Engineering and Technical Center of Light Manipulations&Shandong Provincial Key Laboratory of Optics and photonic Device School of Physics and ElectronicsShandong Normal UniversityJinan 250358China institute of microscale Optoelectronics Collaborative Innovation Center for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)Shenzhen UniversityShenzhen 518060China State Key Laboratory of High Performance Ceramics and Superfine microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 201899China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing

Graphdiyne(GDY),a novel all-carbon nanomaterial,is considered the most easily synthesized and stable carbon allotrope,positioning it as a promising photoelectric ***,we successfully fabricated a high-quality GDY saturable absorber and saturable absorber *** broadband nonlinear saturable absorption and ultrafast relaxation dynamic properties in midinfrared region of the GDY were *** solid-state diode-pumped short and ultrashort pulsed lasers were realized using the GDY absorber at wavelengths of 2 and 2.8μm,*** results were then theoretically *** is the first presentation of ultrashort pulsed lasers in the mid-infrared region with GDY *** results resolutely confirm that GDY could be an optional broadband SA for all solid-state mid-infrared pulsed lasers,and they evidence its promising applications in mode-locked ultrafast lasers.

关键词： graphdiyne broadband nonlinear properties all-solid-state laser

来源：

维普期刊数据库

同方期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Lasing microbottles

引用

Light(Science & Applications) 2017年第1期6卷 218-220页

作者： Misha Sumetsky Aston institute of photonic Technologies Aston UniversityBirmingham B47ETUK

Lasing of an optical microbottle resonator at predetermined resonant wavelengths is feasible via spatial engineering of the pump laser *** whispering gallery mode(WGM)phenomenon,which was first discovered by Lord Rayleigh in 1912 for acoustic waves running around the interior of the dome of St Paul’s Cathedral in London1,has found exciting microscale applications for optical *** to acoustic WGMs,optical WGMs circulate inside an optical microresonator,reflecting from its surface due to the effect of total internal *** types of optical WGM microresonators enable the delay,control,generation and transformation of light on a microscale;these types have been demonstrated and investigated2–*** fabrication methods include the melting of optical materials,mechanical and laser machining and polishing,and the use of liquid or solidified liquid droplets.

关键词： transformation enable interior

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

An efficient continuous-wave YVO_4/Nd:YVO_4/YVO_4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode

引用

Chinese Physics B 2016年第11期25卷 275-278页

作者：樊莉赵伟倩乔鑫夏长权汪丽春范会博沈明亚 College of Physics Science and Technology Institute of Applied Photonic Technology Yangzhou University National Laboratory of Solid State microstructures Nanjing University

We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO4/Nd：YVO4/YVO4 crystal and pumped by a wavelength-locked 878.9 nm diode laser.A maximum output power of 5.3 W is achieved at a pump power of 26 W,corresponding to an optical conversion efficiency of 20%and a slope efficiency of 21%.The Raman threshold for the diode pump power was only 0.92 *** results reveal that in-band pumping by a wavelength-locked diode laser significantly enhances output power and efficiency of self-Raman lasers by virtue of improved pump absorption and relieved thermal loading.

关键词： pumped locked pumping resonator incident mirror virtue coupler powers grating

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Band Edge Emission Improvement by Energy Transfer in HybridⅢ-Nitride/Organic Semiconductor nanostructure

引用

Chinese Physics Letters 2016年第10期33卷 132-135页

作者：蒋府龙刘亚莹李扬扬陈鹏刘斌谢自力修向前华雪梅韩平施毅张荣郑有炓 Key Laboratory of Advanced photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University Nanjing University institute of Optoelectronics at Yangzhou

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-emciency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescenee （PL） spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.

关键词： GaN PPV MEH Nitride/Organic Semiconductor nanostructure Band Edge Emission Improvement by Energy Transfer in Hybrid by in

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Thin-film neural networks for optical inverse problem

引用

Light(Advanced Manufacturing) 2021年第4期2卷 23-30页

作者： Lingjie Fan Ang Chen Tongyu Li Jiao Chu Yang Tang Jiajun Wang Maoxiong Zhao Tangyao Shen Minjia Zheng Fang Guan Haiwei Yin Lei Shi Jian Zi State Key Laboratory of Surface Physics Key Laboratory of Micro-and Nano-Photonic Structures(Ministry of Education)and Department of PhysicsFudan UniversityShanghai 200433China Shanghai Engineering Research Center of Optical Metrology for nano-fabrication(SERCOM) Shanghai 200433China institute for nanoelectronic devices and Quantum computing Fudan UniversityShanghai 200438China Collaborative Innovation Center of Advanced microsstructures Nanjing UniversityNanjing 210093China

The thin-film optical inverse problem has attracted a great deal of attention in science and industry,and is widely applied to optical ***,as the number of layers increases,the time it takes to extract the parameters of thin films drastically ***,we introduce the idea of exploiting the structural similarity of all-optical neural networks and applied it to the optical inverse *** propose thin-film neural networks(TFNNs)to efficiently adjust all the parameters of multilayer thin *** test the performance of TFNNs,we implemented a TFNN algorithm,and a reflectometer at normal incidence was *** on multilayer thin films with 232 layers,it is shown that TFNNs can reduce the time consumed by parameter extraction,which barely increased with the number of layers compared with the conventional *** were also used to design multilayer thin films to mimic the optical response of three types of cone cells in the human *** light passing through these multilayer thin films was then recorded as a colored photo.

关键词： method inverse film

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

引用

nano Research 2023年第8期16卷 11096-11106页

作者： Zhiwei Si Zongliang Liu Xiaoxuan Wang Chunxiang Xu Wei Lin Xiaoxuan Luo Feng Li Xiaoming Dong Shunan Zheng Xiaodong Gao Jianfeng Wang Ke Xu School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou institute of nano-tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China Suzhou nanowin Science and Technology Co Ltd.Suzhou 215123China Shenyang National Laboratory for Materials Science Jiangsu Institute of Advanced SemiconductorsSuzhou 215123China State Key Laboratory of Bioelectronics School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China Key Laboratory for Physical Electronics and Devices of the Ministry of Education&Shaanxi Key Lab of Information photonic Technique School of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China

There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures,and the impurity-related deep energy level behavior will have a significant impact on device ***,a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN *** present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence(CL)*** have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN *** lateral growth sector,i.e.,the{101¯1}-growth sector,forms six side facets of the microdisk and shows significant near-bandgap emission(NBE)and weak deep energy level *** effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface(Ramicrodisk shows significant ultraviolet(UV)lasing action(main lasing peak wavelength 370.9 nm,quality factor 1278,threshold 6×10^(4)μJ/cm^(2))under pulsed optical *** believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk,the high structural quality,the low content of deep energy level defects,the low surface roughness,and the low stress.

关键词： homogeneous lateral epitaxy spatially resolved cathodoluminescence deep energy level GaN microdisk lasing

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Band gap control of phononic beam with negative capacitance piezoelectric shunt

引用

Chinese Physics B 2011年第1期20卷 405-409页

作者：陈圣兵温激鸿郁殿龙王刚温熙森 institute of Mechatronical Engineering National University of Defense Technology Key Laboratory of photonic and Phononic Crystal of Ministry of Education National University of Defense Technology

Periodic arrays of negative capacitance shunted piezoelectric patches are employed to control the band gaps of phononic beams. The location and the extent of induced band gap depend on the mismatch in impedance generated by each patch. The total impedance mismatch is determined by the added mass and stiffness of each patch as well as the shunting electrical impedance. Therefore, the band gap of the shunted phononic beam can be actively tuned by appropriately selecting the value of negative capacitance. The control of the band gap of phononic beam with negative capacitive shunt is demonstrated numerically by employing transfer matrix method. The result reveals that using negative capacitive shunt to tune the band gap is effective.

关键词： phononic crystal band gao negative capacitive shunt oiezoelectric beam

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Determination of breakdown voltage of In_(0.53)Ga_(0.47)As/InP single photon avalanche diodes

引用

Chinese Optics Letters 2011年第1期9卷 21-23页

作者：周鹏廖常俊魏政军李淳飞袁书琼 Department of Physics Harbin Institute of Technology Lab of photonic Information Technology School for Information and Optoelectronic Science and EngineeringSouth China Normal University

We examine the saturation of relative current gain of Ino.53Gao.47As/InP single photon avalanche diodes （SPADs） operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured u... 详细信息

关键词： down Determination of breakdown voltage of In As/InP single photon avalanche diodes InP Ga

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Optical and defect properties of S-doped and Al-doped GaSe crystals

引用

Chinese Physics B 2017年第9期26卷 248-251页

作者：黄昌保吴海信倪友保王振友陈诗静 Anhui Provincial Key Laboratory of photonic Devices and Materials Anhui Institute of Optics and Fine MechanicsChinese Academy of SciencesHefei 230031China

S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence（PL） and Fourier transform infrared spectroscopy（FT-IR）. The micro-topography of（0001） face of these samples was observed by using scanning electron microscope（SEM） to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe^0 or AlGa^＋1） substitutional defects in the layer GaSe structure, and the positive center of AlGa-^＋1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.

关键词： doped GaSe crystals defect optical properties mechanical properties

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Atomistic Simulation of He Clustering and Defects Produced in Ni

引用

Chinese Physics Letters 2006年第5期23卷 1261-1264页

作者：刘提将王月霞潘正瑛姜晓梅周亮朱靖 institute of Modern Physics Fudan University Shanghai 200433 State Key Laboratory for Advanced photonic Materials and Devices Fudan University Shanghai 200433

Using the molecular dynamics method, the stability of small He-vacancy clusters is studied under the condition of the high He and low vacancy densities. The result shows that there is a competition between He atoms detrapped and self-interstitial atoms （SIAs） emitted during the clustering of He atoms. When the He number is above a critical value of 9, the SIA emission is predominant. The SIA emission can result in deep capture of He atoms since the binding energy of He to a He-vacancy cluster is increased with the number of SIAs created. The cluster thus grows up. In addition, more SIAs are created when the temperature is elevated. The average volume of a He atom is increased. The cluster expansion takes place at high temperature.

关键词： HIGH-TEMPERATURE EMBRITTLEMENT FORMATION ENERGIES HELIUM METALS IRRADIATION NICKEL

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：