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检索条件"机构=Institute of Micro-and Nanoelectronic Systems"
119 条 记 录,以下是111-120 订阅
排序:
Synthesis of Graphene Films for nanoelectronic Biosensing
Synthesis of Graphene Films for Nanoelectronic Biosensing
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中国化学会第29届学术年会
作者: Xiaochen Dong Wei Huang Jiangsu-Singapore Joint Research Center for Organic/Bio-Electronics & Information Displays and institute of Advanced Materials (IAM) Nanjing Tech University Key Laboratory for Organic Electronics & Information Displays (KLOEID) and institute of Advanced Materials (IAM) Nanjing University of Posts and Telecommunications (NUPT)
Graphene, a monolayer of carbon atoms compacted into a two-dimensional honeycomb crystal structure, has attracted tremendous attention in recent years, because of its unique electronic, thermal, and mechanical propert...
来源: cnki会议 评论
Iron-doping induced multiferroic in two-dimensional In2Se3
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Science China Materials 2020年 第3期63卷 421-428页
作者: Huai Yang Longfei Pan Mengqi Xiao Jingzhi Fang Yu Cui Zhongming Wei State Key Laboratory of Superlattices and microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China Beijing Academy of Quantum Information Sciences Beijing 100193China
Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile ***,we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fedoped I... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Natural overlaying behaviors push the limit of planar cyclic deformation performance in few-layer MoS_(2) nanosheets
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InfoMat 2023年 第9期5卷 64-77页
作者: Peifeng Li Guangjie Zhang Zhuo Kang Xin Zheng Yong Xie Chunyuan Liang Yizhi Zhang Xiaoyang Fang Rong Sun Zhiquan Liu Yeqiang Bu Yang Lu Yue Zhang Shenzhen institute of Advanced Electronic Materials Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenthe People's Republic of China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijingthe People's Republic of China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijingthe People's Republic of China State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingthe People's Republic of China College of Chemistry and Materials Engineering Zhejiang A&F UniversityHangzhouthe People's Republic of China Center for X-mechanics School of Aeronautics and AstronauticsZhejiang UniversityHangzhouPeople's Republic of China Department of Mechanical Engineering The University of Hong KongHong Kongthe People's Republic of China
As a typical two-dimensional(2D)transition metal dichalcogenides(TMDCs)material with nonzero band gap,MoS_(2)has a wide range of potential applications as building blocks in the field of *** stability and reliability ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
The Coulomb interaction in van der Waals heterostructures
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Science China(Physics,Mechanics & Astronomy) 2019年 第3期62卷 102-107页
作者: Le Huang MianZeng Zhong HuiXiong Deng Bo Li ZhongMing Wei JingBo Li SuHuai Wei School of Materials and Energy Guangdong University of Technology State Key Laboratory of Superlattices and microstructures Institute of Semiconductors University of Chinese Academy of Sciences Department of Applied Physics School of Physics and Electronics Hunan University Beijing Computational Science Research Center
The giant Stark effect(GSE) in a set of van der Waals(vdW) heterostructures is studied using first-principles methods. A straightforward model based on quasi-Fermi levels is proposed to describe the influence of an ex... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides
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Research 2023年 第4期2023卷 219-243页
作者: Mengdi Chen Lei Li Manzhang Xu Weiwei Li Lu Zheng Xuewen Wang Frontiers Science Center for Flexible Electronics(FSCFE)&Shaanxi institute of Flexible Electronics(SIFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi'an 710072China Shaanxi Key Laboratory of Flexible Electronics(KLoFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi'an 710072China MIIT Key Laboratory of Flexible Electronics(KLoFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi’an710072China Key Laboratory of Flexible Electronics of Zhejiang Provience Ningbo Institute of Northwestern Polytechnical University218 Qingyi RoadNingbo 315103China.
The transition metal trichalcogenides(TMTCs)are quasi-one-dimensional(1D)MX_(3)-type van der Waals layered semiconductors,where M is a transition metal element of groups IV and V,and X indicates chalcogen *** to the u... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
State-of-the-art developments in metal and carbon-based semiconducting nanomaterials: applications and functions in spintronics, nanophotonics, and nanomagnetics
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Advances in Manufacturing 2017年 第2期5卷 105-119页
作者: Sergio Manzetti Francesco Enrichi Fjordforsk MS NanoFactory Midtun 6894 VangsnesNorway Computational Biology and Bioinformatics Uppsala University 75124 Uppsala Sweden Historical Museum of Physics and Research and Study Center Enrico Fermi 00184 Rome Italy Division of Materials Science Department of Engineering Sciences and Mathematics Lnlea University of Technology971 87 Lulea Sweden Department of Molecular and Nanosystems Sciences Ca' Foscari University of Venice 30172 Mestre VenetiaItaly institute of Photonics and Nanotechnologies CSMFO Lab. &FBK-CMM IFN-CNR 38123 Povo Trento Italy
Nanomaterials composed of metals and metal alloys are the most valuable components in emerging micro- and nano-electronic devices and innovations to date. The composition of these nanomaterials, their quantum chemical... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
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Nano Research 2019年 第2期12卷 463-468页
作者: Junchi Liu Xiao Liu Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Liming Tang Keqiu Chen Yuan Liu Jingbo Li Zhongming Wei Xidong Duan Department of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 China Hunan Key Laboratory of two dimensional materials Department of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 China State Key Laboratory of Superlattices and microstructures Institute of Semiconductors Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100083 China Hunan Key Laboratory of two dimensional materials State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China
Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Crystallographically Selective Nanopatterning of Graphene on SiO_(2)
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Nano Research 2010年 第2期3卷 110-116页
作者: Péter Nemes-Incze Gábor Magda Katalin Kamarás LászlóPéter Biró Research institute for Technical Physics and Materials Science PO Box 49H-1525 BudapestHungary Budapest University of Technology and Economics(BME) PO Box 91H-1521 BudapestHungary Research institute for Solid State Physics and Optics Hungarian Academy of SciencesPO Box 49H-1525 BudapestHungary
Graphene has many advantageous properties,but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications,for example,field-effect *** problem can be circumv... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Significantly enhanced of tungsten diselenide functionalization optoelectronic performance phototransistor via surface
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Nano Research 2017年 第4期10卷 1282-1291页
作者: Bo Lei Department of Physics National University of Singapore Singapore 117542 Singapore 2 Centre forAdvanced D Materials and Graphene Research Centre National University of Singapore Singapore 117546 Singapore Department of Chemistry National University of Singapore Singapore 117543 Singapore SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology Shenzhen University Shenzhen 518060 China National University of Singapore (Suzhou) Research institute 377 Lin Quan Street Suzhou Industrial Park Suzhou 215123 China
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted enormous research interests and efforts towards the development of versatile electronic and optical devices, owing to their extra... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论