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High dielectric constant materials and their application to IC gate stack systems

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广东有色金属学报 2005年第2期15卷 42-48页

作者：屠海令 National Engineering Research Center for Semiconductor Materials General Research institute for NonferrousMetals Beijing 100088 China

High dielectric constant (high-k) materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the applic... 详细信息

关键词：二氧化硅电介质绝缘体绝缘材料

Interfaces between MoO x and Mo X2(X=S,Se,and Te)

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Chinese Physics B 2020年第11期29卷 106-116页

作者：陈凤鸣刘金鑫郑晓明刘龙慧谢海鹏宋飞高永立黄寒 Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China Shanghai Synchrotron Radiation Facility Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201204China Department of Physics and Astronomy University of RochesterRochesterNY 14627USA

In the past decades there have been many breakthroughs in low-dimensional materials,especially in two-dimensional(2D)atomically thin crystals like *** structural analogues of graphene but with a sizeable band gap,monolayers of atomically thin transition metal dichalcogenides(with formula of MX2,M=Mo,W;X=S,Se,Te,etc.)have emerged as the ideal 2D prototypes for exploring fundamentals in physics such as valleytronics due to the quantum confinement effects,and for engineering a wide range of nanoelectronic,optoelectronic,and photocatalytic *** metal trioxides as promising materials with low evaporation temperature,high work function,and inertness to air have been widely used in the fabrication and modification of *** this review,we reported the fabrications of one-dimensional MoS2 wrapped MoO2 single crystals with varied crystal direction via atmospheric pressure chemical vapor deposition method and of 2D MoOx covered MoX2 by means of exposing MoX2 to ultraviolet *** prototype devices show good *** approaches are common to other transition metal dichalcogenides and transition metal oxides.

关键词： MoOx epitaxial relationships MoX2 layer-by-layer oxidation

Biomarcromolecule-Templated Self-Assembly of Discrete Plasmonic Nanostructures

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Biomarcromolecule-Templated Self-Assembly of Discrete Plasmo...

Hybrid nanoelectronics： Future of Computer Technology

中国化学会第十四届胶体与界面化学会议

作者： Feng Li Xiang Lan Zhong Chen Qiangbin Wang Suzhou institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

＜正＞Well-defined plasmonic nanostructures is of great significance in the study of plasmon-enhanced single molecule spectroscopy,plasmonic chiral optics,nanophotonic and nanoelectronic device,***,we report our recent progress in construction of discrete one-,two-,and three-dimensional（1D,2D and 3D,respectively）plasmonic nanostructures by using biomolecule-templated self-assembly strategy,including DNA and protein molecules.

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来源： cnki会议评论

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Journal of Computer Science & Technology 2006年第6期21卷 871-886页

作者：王慰刘明 Andrew Hsu Electrical and Computer Engineering Department Purdue School of Engineering and Technology Indiana University-Purdue University Indianapolis Indiana 46202 U.S.A. institute of microelectronics Chinese Academy of Sciences Beijing 100080 P.R. China Mechanical Engineering Department Purdue School of Engineering and Technology Indiana University-Purdue University Indianapolis Indiana 46202 U.S.A.

Nanotechnology may well prove to be the 21st century＇s new wave of scientific knowledge that transforms people＇s lives. Nanotechnology research activities are booming around the globe. This article reviews the recent progresses made on nanoelectronic research in US and China, and introduces several novel hybrid solutions specifically useful for future computer technology. These exciting new directions will lead to many future inventions, and have a huge impact to research communities and industries.

关键词： nanoelectronics hybrid fault tolerance microelectronics device circuit computer systems

Two-dimensional MgSiP_(2) with anisotropic electronic properties and good performances for Na-ion batteries

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Chinese Chemical Letters 2021年第3期32卷 1081-1085页

作者： Chunying Pu Jiahui Yu Ling Fu Jia Wang Houyong Yanga Dawei Zhou Chaozheng He institute of Environment and Energy Catalysis School of Materials Science and Chemical EngineeringXi’an Technological UniversityXi’an 710021China College of Physics and Electronic Engineering Nanyang Normal UniversityNanyang 473061China Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices School of Materials Science and Chemical EngineeringXi'an Technological UniversityXi'an 710021China

Using the global particle-swarm optimization method and density functional theory,we predict a new stable two-dimensional layered material:MgSiP_(2)with a low-buckled honeycomb *** HSE06 calculation shows that MgSiP_(2)is an indirect-gap semiconductor with a band-gap of 1.20 eV,closed to that of bulk *** remarkably,MgSiP_(2)exhibits worthwhile anisotropy along with electron and hole carrier mobility.A ultrahigh electron mobility is even up to 1.29×10^(4)cm^(2)V^(-1)s^(-1).while the hole mobility is nearly zero along the a *** large difference of the mobility between electron and hole together with the suitable band-gap suggest that MgSiP_(2)may be a good candidate for solar cell or photochemical catalysis ***,we explore MgSiP_(2)as an anode for sodium-ion batte *** Na adsorption,the semiconducting MgSiP_(2)transforms to a metallic state,ensuring good electrical conductivity.A maximum theoretical capacity of 1406 mAh/g,a small volume change(within 9.5%),a small diffusion barrier(~0.16 eV)and low average open-circuit voltages(~0.15 V)were found fo r MgSiP_(2)as an anode for sodium-ion *** results are helpful to deepen the understanding of MgSiP_(2)as a nanoelectronic device and a potential anode for Na-ion batteries.

关键词： First-principles calculations Two-dimensional MgSiP_(2) Anode materials Sodium-ion batteries Carrier mobility

Fabrication of ll-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

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Chinese Physics Letters 2009年第8期26卷 273-275页

作者：朱效立谢常青张满红刘明陈宝钦潘峰 Laboratory of Advanced Materials Department of Materials Science and Engineering Tsinghua University Beijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist （HSQ）. By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

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Deep subwavelength nanometric image reconstruction using Fourier domain optical normalization

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Light(Science & Applications) 2016年第1期5卷 632-640页

作者： Jing Qin Richard M Silver Bryan M Barnes Hui Zhou Ronald G Dixson Mark-Alexander Henn Engineering Physics Division Physical Measurement LaboratoryNational Institute of Standards and Technology100 Bureau Dr MS 8212GaithersburgMD 20899-8212USA

Quantitative optical measurements of deep subwavelength,three-dimensional(3D),nanometric structures with sensitivity to sub-nanometer details address a ubiquitous measurement challenge.A Fourier domain normalization approach is used in the Fourier optical imaging code to simulate the full 3D scattered light field of nominally 15 nm-sized structures,accurately replicating the light field as a function of the focus *** the full 3D light field,nanometer scale details such as a 2 nm thin conformal oxide and nanometer topography are rigorously fitted for features less than one-thirtieth of the wavelength in *** densely packed structures are positioned nearly an order of magnitude closer than the conventional Rayleigh resolution limit and can be measured with sub-nanometer parametric *** approach enables a practical measurement sensitivity to size variations of only a few atoms in size using a high-throughput optical configuration with broad application in measuring nanometric structures and nanoelectronic devices.

关键词： computational microscopy light scattering metrology quantitative nanoscale microscopy sub-nanometer uncertainties

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

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Nano Research 2015年第4期8卷 1229-1240页

作者： Eunhye Baek Sebastian Pregl Mehrdad Shaygan Lotta Romhildt Walter M. Weber Thomas Mikolajick DmitryA. Ryndyk Larysa Baraban Gianaurelio Cuniberti institute for Materials Science and Max Bergmann Center of Biomaterials TU Dresden 01062 Dresden Germany Center for Advancing Electronics Dresden TU Dresden 01062 Dresden Germany Division of IT Convergence Engineering Pohang University of Science and Technology Pohang Korea NaMLab GmbH Nothnitzer Strasse 64 01187 Dresden Germany Dresden Center for Computational Materials Science TU Dresden 01062 Dresden Germany

由组成的新奇感光性的混合地效果晶体管联邦货物税一器官的卟啉电影 / 氧化物 / 硅 nanowires 多重壳被介绍。由于在 nanowires 附近的氧化物壳，在混合 nanodevices 的水流的 photoswitching 被电场效果指导，在器官的电影以内由费用... 详细信息

由组成的新奇感光性的混合地效果晶体管联邦货物税一器官的卟啉电影 / 氧化物 / 硅 nanowires 多重壳被介绍。由于在 nanowires 附近的氧化物壳，在混合 nanodevices 的水流的 photoswitching 被电场效果指导，在器官的电影以内由费用再分配导致了。这个原则是 photoinduced 电子注射的一种选择，为依靠在器官的分子和金属或半导体之间的直接连接的设备有效。在紫轻照明之上的混合 nanodevices 的切换的动力学被调查，包 nanowires 的卟啉电影的厚度上的强壮的依赖被发现。而且，器官的电影的厚度被发现为 nanowire 联邦货物税的切换的效率也是一个关键参数，开在轻照明下面由电流的比率代表了在上并且处于黑暗条件。我们建议卟啉电影收费解释 nanowire 联邦货物税的 optoelectronic 行为由器官的电影 / 氧化物 / 半导体连接调停了的一个简单模型。

关键词：半导体场效应晶体管硅纳米线光电开关氧化物有机薄膜杂化纳米器件 FET

Biomarcromolecule-Templated Self-Assembly of Discrete Plasmonic Nanostructures

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Biomarcromolecule-Templated Self-Assembly of Discrete Plasmo...