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Science China(Physics,Mechanics & Astronomy) 2015年第10期58卷 81-88页

作者： ZHANG Jin REN Jun FU HuiXia DING ZiJing LI Hui MENG Sheng Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Department of Physics Tsinghua University Collaborative Innovation Center of Quantum Matter

We predict a series of new two-dimensional(2D) inorganic materials made of silicon and carbon elements(2D SixC1?x) based on density functional theory. Our calculations on optimized structure, phonon dispersion, and finite temperature molecular dynamics confirm the stability of 2D SixC1?x sheets in a two-dimensional, graphene-like, honeycomb lattice. The electronic band gaps vary from zero to 2.5 e V as the ratio x changes in 2D SixC1?x changes, suggesting a versatile electronic structure in these sheets. Interestingly, among these structures Si0.25C0.75 and Si0.75C0.25 with graphene-like superlattices are semimetals with zero band gap as their ? and ?* bands cross linearly at the Fermi level. Atomic structural searches based on particle-swarm optimization show that the ordered 2D SixC1?x structures are energetically favorable. Optical absorption calculations demonstrate that the 2D silicon-carbon hybrid materials have strong photoabsorption in visible light region, which hold promising potential in photovoltaic applications. Such unique electronic and optical properties in 2D SixC1?x have profound implications in nanoelectronic and photovoltaic device applications.

关键词：光伏材料碳元素超晶格二维杂化材料蜂窝粒子群优化算法电子结构

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Synthesis and characterization of amphiphilic graphene

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Science China(Technological Sciences) 2014年第2期57卷 244-248页

作者： DU ZhuZhu AI Wei ZHAO JianFeng XIE LingHai HUANG Wei Centre of Molecular System and Organic Devices (CMSOD) Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM) Nanjing University of Posts and Telecommunications Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics & Information Displays and institute of Advanced Materials Nanjing University of Technology

A simple and effective method for the preparation of amphiphilic graphene(AG)is presented under an organic solvent-free synthetic *** synthetic route first involves a cyclization reaction between carboxylic groups on graphene oxide and the amino groups on 5,6-diaminopyrazine-2,3-dicarbonitrile,and subsequent reduction by *** of UV-vis spectroscopy,Fourier transformed infrared spectroscopy(FT-IR),X-ray photoelectron spectroscopy(XPS),thermogravimetric analysis(TGA)and Raman spectroscopy have confirmed that the covalent functionalization of graphene can be achieved through the formation of imidazo[4,5-b]pyrazine on the graphene *** a result,AG can be successfully dispersed in water and common organic *** work successfully provides a facile and efficient way to fabricate AG and may extend the potential applications of graphene-based materials in nanoelectronic devices,polymer fillers and biological field.

关键词：合成条件石墨两亲性傅立叶变换红外光谱 X射线光电子能谱表征纳米电子器件有机溶剂

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Integrated nanoelectronic-photonic devices and bioresorbable materials

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Nano Research 2021年第9期14卷 2885-2887页

作者： John A.Rogers Departments of Materials Science and Engineering Biomedical Engineering and Neurological SurgerySimpson Querrey Institute for BioelectronicsNorthwestern UniversityEvanstonIL 60208USA

I am honored receive,with ***,this years Nano Research *** my case,the recognition is largely an acknowledgement of the scientific advances achieved by a diverse set of graduate students,undergraduates and postdoctoral fellows as they passed through my group over the years-talented,dedicated,creative,collaborative people,of the very highest *** of these former group members,each now leading large and highly successful academic research programs of their own,contributed outstanding articles to this special issue-21 in total!I would like to extend my special thanks to them-I feel a strong sense of pride and joy in their many impressive accomplishments as pioneering,independent *** topics of these articles span a wide range,as a powerful set of projects at the forefront of nanoscience and nanotechnology,briefly summarized by topic area in the following.

关键词： electronic accomplishment summarized

Si nanowire FET and its modeling

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Science China(Information Sciences) 2011年第5期54卷 1004-1010+1012页

作者： IWAI Hiroshi NATORI Kenji SHIRAISHI Kenji IWATA Jun-ichi OSHIYAMA Atsushi YAMADA Keisaku OHMORI Kenji KAKUSHIMA Kuniyuki AHMET Parhat Frontier Research Center Tokyo Institute of Technology Yokohama Japan Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology Yokohama Japan Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba Japan Center for Computational Sciences University of Tsukuba Tsukuba Japan School of Engineering The University of Tokyo Tokyo Japan

Because of its ability to effectively suppress off-leakage current with its gate-around conffguration, the Si nanowire FET is considered to be the ultimate structure for ultra-small CMOS devices to the extent that the devices would be approaching their downsized limits. Recently, several experimental studies of Si nanowire FETs with on-currents much larger than those of planar MOSFETs have been published. Consequently, Si nanowire FETs are now gaining significant attention as the most promising candidate for mainstream CMOS devices in the 2020s. To enable the introduction of the Si nanowire FETs into integrated circuits, good compact models, which circuit designers can easily handle, are essential. However, it is a very challenging task to establish such a compact model, because the ID - VD characteristics of Si nanowire FETs are affected by the band structure of the nanowire, which is very sensitive to the nanowire diameter, cross-sectional shape, crystal orientation, mechanical stress and interface states. In this paper, the recent status of research on Si nanowire FETs in experimental and theoretical studies is described.

关键词： Si nanowire MOSFET modeling

Topological domain states and magnetoelectric properties in multiferroic nanostructures

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National Science Review 2019年第4期6卷 684-702页

作者： Guo Tian Wenda Yang Deyang Chen Zhen Fan Zhipeng Hou Marin Alexe Xingsen Gao Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal University Department of Physics University of Warwick

Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges *** this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.

关键词： topological defects ferroelectric domains multiferroic nanostructures magnetoelectric coupling

Natural overlaying behaviors push the limit of planar cyclic deformation performance in few-layer MoS_(2) nanosheets

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InfoMat 2023年第9期5卷 64-77页

作者： Peifeng Li Guangjie Zhang Zhuo Kang Xin Zheng Yong Xie Chunyuan Liang Yizhi Zhang Xiaoyang Fang Rong Sun Zhiquan Liu Yeqiang Bu Yang Lu Yue Zhang Shenzhen institute of Advanced Electronic Materials Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenthe People's Republic of China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijingthe People's Republic of China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijingthe People's Republic of China State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingthe People's Republic of China College of Chemistry and Materials Engineering Zhejiang A&F UniversityHangzhouthe People's Republic of China Center for X-mechanics School of Aeronautics and AstronauticsZhejiang UniversityHangzhouPeople's Republic of China Department of Mechanical Engineering The University of Hong KongHong Kongthe People's Republic of China

As a typical two-dimensional(2D)transition metal dichalcogenides(TMDCs)material with nonzero band gap,MoS_(2)has a wide range of potential applications as building blocks in the field of *** stability and reliability of the corresponding nanoelectronic devices depend critically on the mechanical performance and cyclic reliability of 2D MoS_(2).Although an in situ technique has been used to analyze the mechanical properties of 2D materials,the cyclic mechanical behavior,that is,fatigue,remains a major challenge in the practical application of the *** study was aimed at analyzing the planar cyclic performance and deformation behavior of three-layer MoS_(2)nanosheets(NSs)using an in situ transmission electron microscopy(TEM)variable-amplitude uniaxial low-frequency and cyclic loading-unloading tensile acceleration *** also elucidated the strengthening effect of the natural overlaying affix fragments(other external NSs)or wrinkle folds(internal folds from the NS itself)on cycling performances and service life of MoS_(2)NSs by delaying the whole process of fatigue crack initiation,propagation,and *** results have been confirmed by molecular dynamics(MDs)*** overlaying enhancement effect effectively ensures the long-term reliability and stability of nanoelectronic devices made of few-layer 2D materials.

关键词： cyclic deformation performance few-layer MoS_(2) in situ TEM nanomechanics natural overlays strengthening effect

nanoelectronic devices resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

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Chinese Physics B 2006年第6期15卷 1335-1338页

作者：张杨曾一平马龙王宝强朱占平王良臣杨富华 Materials Science Centre Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm^2 has been obtained for diodes with AlAs barriers of ten monolayers, and an Ino.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

关键词： resonant tunnelling diode InP substrate molecular beam epitaxy high resolution transmission electron microscope

Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides

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Research 2023年第4期2023卷 219-243页

作者： Mengdi Chen Lei Li Manzhang Xu Weiwei Li Lu Zheng Xuewen Wang Frontiers Science Center for Flexible Electronics(FSCFE)&Shaanxi institute of Flexible Electronics(SIFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi'an 710072China Shaanxi Key Laboratory of Flexible Electronics(KLoFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi'an 710072China MIIT Key Laboratory of Flexible Electronics(KLoFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi’an710072China Key Laboratory of Flexible Electronics of Zhejiang Provience Ningbo Institute of Northwestern Polytechnical University218 Qingyi RoadNingbo 315103China.

The transition metal trichalcogenides(TMTCs)are quasi-one-dimensional(1D)MX_(3)-type van der Waals layered semiconductors,where M is a transition metal element of groups IV and V,and X indicates chalcogen *** to the unique quasi-1D crystalline structures,they possess several novel electrical properties such as variable bandgaps,charge density waves,and superconductivity,and highly anisotropic optical,thermoelectric,and magnetic *** study of TMTCs plays an essential role in the 1D quantum materials field,enabling new opportunities in the material research ***,tremendous progress in both materials and solid-state devices has been made,demonstrating promising applications in the realization of nanoelectronic *** review provides a comprehensive overview to survey the state of the art in materials,devices,and applications based on ***,the symbolic structure,current primary synthesis methods,and physical properties of TMTCs have been ***,examples of TMTC applications in various fields are presented,such as photodetectors,energy storage devices,catalysts,and ***,we give an overview of the opportunities and future perspectives for the research of TMTCs,as well as the challenges in both basic research and practical applications.

关键词： Transition realization crystalline

Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure： A first-principles investigation

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Frontiers of physics 2018年第2期13卷 167-174页

作者： Xue-Rong Hu Ji-Ming Zheng Zhao-Yu Ren institute of Photonics Photo-technology National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) National Photoelectric Technology and Functional Materials Application of Science and Technology International Cooperation Base Northwest University Xi'an 710069 China

Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

关键词： strong coupling vdW heterostructure DFT calculations tight-binding Hamiltonian model

Fast growth of large single-crystalline WS_(2) monolayers via chemical vapor deposition

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Nano Research 2021年第6期14卷 1659-1662页

作者： Shengxue Zhou Lina Liu Shuang Cui Xiaofan Ping Dake Hu Liying Jiao Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education Department of ChemistryTsinghua UniversityBeijing100084China Department of Chemistry and Chemical Engineering Ningxia Normal UniversityGuyuan756000China Sinopec Beijing Research institute of Chemical Industry Beijing100013China

Two-dimensional(2D)tungsten disulfide(WS2)has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic *** controllable synthesis of WS2 monolayers(1L)with both large size and high quality remains as a ***,we developed a new approach for the chemical vapor deposition(CVD)growth of WS2 monolayers by using K2WS4 as the growth *** simple chemistry involved in our approach allowed for improved controllability and a fast growth rate of~30μm·min−*** achieved the reliable growth of 1L WS2 flakes with side lengths of up to~500μm and the obtained WS2 flakes were 2D single crystals with low density of defects over a large area as evidenced by various spectroscopic and microscopic *** addition,the large 1L WS2 single crystals we obtained showed higher electrical performance than their counterparts grown with previous approaches,demonstrating the potential of our approach in producing high quality and large 2D semiconductors for future nanoelectronics.

关键词： tungsten disulfide two-dimensional chemical vapor deposition field effect transistors