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A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

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Journal of Semiconductors 2012年第10期33卷 62-65页

作者：彭洋洋陆科杰隋文泉 nanoelectronic Platform Zhejiang-California Nanosystems InstituteZhejiang University

A two-stage 2.5-5 GHz monolithic low-noise amplifier（LNA） has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT *** achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback *** results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB *** input and output return loss exceeded -10-dB across the *** power consumption of this LNA is 33 *** to the author＇s knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

关键词： LNA GaAs pHEMT MMIC microwave

Heterodyne Standing-Wave Interferometer with Improved Phase Stability

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Nanomanufacturing and Metrology 2021年第3期4卷 190-199页

作者： Ingo Ortlepp Jens-Peter Zollner Ivo W.Rangelow Eberhard Manske institute of Process Measurement and Sensor Technology Technische Universitat IlmenauEhrenbergstraBe 2998693 IlmenauGermany microelectronic and nanoelectronic systems Group Technische Universitat IlmenauIlmenauGermany Nanoscale systems Group Technische Universitat IlmenauIlmenauGermany

This paper describes a standing-wave interferometer with two laser sources of different wavelengths,diametrically opposed and emitting towards each *** resulting standing wave has an intensity profile which is moving with a constant velocity,and is directly detected inside the laser beam by two thin and transparent photo *** first sensor is at a fixed position,serving as a phase reference for the second one which is moved along the optical axis,resulting in a frequency shift,proportional to the *** phase difference between both sensors is evaluated for the purpose of interferometric length measurements.

关键词： Standing wave Interferometer Heterodyne Ultrathin photo diode

Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-microscope Junction

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Chinese Physics Letters 2022年第3期39卷 99-104页

作者： Lehua Gu Shuang Wu Shuai Zhang Shiwei Wu State Key Laboratory of Surface Physics Key Laboratory of Micro and Nano Photonic Structures(MOE)and Department of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi institute Shanghai 200232China institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Shanghai Research Center for Quantum Sciences Shanghai 201315China

Electroluminescence from a p-type Ga As(110)surface was induced by tunneling electrons in a scanning tunneling microscope under both polarities of bias *** optical spectra exhibit a polarity-independent luminescence peak at 1.47 eV resulting from the exciton ***,the quantum yield of photon emission at negative bias voltage is two orders of magnitude weaker than that at positive bias ***,the luminescence at negative bias voltage shows the linear dependence of bias voltage,distinct from the rapid rise due to resonant electron injection at positive ***,the threshold bias voltage for electroluminescence at negative bias is nearly twice the bandgap of Ga As,not simply satisfying the energy conservation for the creation of an electron–hole *** theoretical calculation,we propose an impact ionization model to nicely explain the newly observed electroluminescence at negative bias *** believe that this mechanism of impact ionization could be readily applied to other nanoscale optoelectronics including 2D semiconductors and 1D nanostructures.

关键词： tunneling luminescence Tunnel

Temperature-switching logic in MoS2 single transistors

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Chinese Physics B 2020年第9期29卷 464-469页

作者： Xiaozhang Chen Lehua Gu Lan Liu Huawei Chen Jingyu Li Chunsen Liu Peng Zhou The State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghai 200433China Department of Physics State Key Laboratory of Surface PhysicsKey Laboratory of Micro and Nano Photonic Structures(Ministry of Education)and Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic *** figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is *** this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 *** transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing *** the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 *** change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical ***,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.

关键词： molybdenum disulfide(MoS2) logic temperature dependence mobility

A Photoelectric-Stimulated MoS_(2) Transistor for Neuromorphic Engineering

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Research 2019年第1期2019卷 273-282页

作者： Shuiyuan Wang Xiang Hou Lan Liu Jingyu Li Yuwei Shan Shiwei Wu David Wei Zhang Peng Zhou ASIC&System State Key Lab. School of MicroelectronicsFudan UniversityShanghai 200433China Department of Physics State Key Laboratory of Surface PhysicsKey Laboratory of Micro and Nano Photonic Structures(Ministry of Education)and Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China

The von Neumann bottleneck has spawned the rapid expansion of neuromorphic engineering and brain-like *** serve as bridges for information transmission and connection in the biological nervous *** direct implementation of neural networks may depend on novel materials and devices that mimic natural neuronal and synaptic *** exploiting the interfacial effects between MoS_(2) and AlOx,we demonstrate that an h-BN-encapsulated MoS_(2) artificial synapse transistor can mimic the basic synaptic behaviors,including EPSC,PPF,LTP,and *** optoelectronic spikes enable simulation of synaptic gain,frequency,and weight *** Pavlov classical conditioning experiment was successfully simulated by electrical tuning,showing associated learning *** addition,h-BN encapsulation effectively improves the environmental time stability of our *** h-BN-encapsulated MoS_(2) artificial synapse provides a new paradigm for hardware implementation of neuromorphic engineering.

关键词： tuning optoelectronic artificial

Resistance switching for RRAM applications

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Science China(Information Sciences) 2011年第5期54卷 1073-1086页

作者： CHEN Frederick T. LEE HengYuan HSU YenYa CHEN PangShiu LIU WenHsing TSAI ChenHan SHEU ShyhShyuan TSAI MingJinn nanoelectronic Technology Division Electronics and Optoelectronics Research Laboratories Industrial Technology Research Institute (ITRI) Department of Chemical and Materials Engineering Ming Shin University of Science and Technology

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

关键词： random access memory storage oxide breakdown oxygen vacancies

Spatial confinement tuning of quenched disorder effects and enhanced magnetoresistance in manganite nanowires

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Science China(Physics,Mechanics & Astronomy) 2020年第3期63卷 106-111页

作者： Yang Yu Qiang Li Qian Shi YinYan Zhu HanXuan Lin Hao Liu HongYan Chen Tian Miao Yu Bai YanMei Wang WenTing Yang WenBin Wang HangWen Guo LiFeng Yin Jian Shen State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Collaborative Innovation Center of Advanced microstructures Nanjing 210093China

Complex oxides have rich functionalities and advantages for future *** many systems,quenched disorder often holds the key to determine their physical properties,and these properties can be further tuned by chemical ***,understanding the role of quenched disorder is complicated because chemical doping simultaneously alters other physical variables such as local lattice distortions and electronic and magnetic ***,we show that spatial confinement is an effective approach to tuning the level of quenched disorder in a complex-oxide system while leaving other physical variables largely *** the confinement of a manganite system down to quasi-one-dimensional nanowires,we observed that the nature of its metal-insulator phase transition exhibits a crossover from a discontinuous to a continuous characteristic,in close accordance with quenched disorder *** argue that the quenched disorder,finite size,and surface effects all contribute to our experimental ***,with reduced nanowire width,the magnetoresistance shows substantial enhancement at low *** findings offer new insight into experimentally tuning the quenched disorder effect to achieve novel functionalities at reduced dimensions.

关键词： quenched disorder manganite nanowires phase transition colossal magnetoresistance

Tunable charge density wave in TiS3 nanoribbons

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Chinese Physics B 2017年第6期26卷 352-361页

作者：黄策张恩泽袁翔王伟懿刘彦闻张成凌霁玮刘姗姗修发贤 State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China institute for nanoelectronic Devices and Quantum Computing Fudan University Shanghai 200433 China Collaborative Innovation Center of Advanced microstructnres Nanjing 210093 China

Recently, modifications of charge density wave（CDW） in two-dimensional（2D） show intriguing properties in quasi-2D materials such as layered transition metal dichalcogenides（TMDCs）. Optical, electrical transport measurements and scanning tunneling microscopy uncover the enormous difference on the many-body states when the thickness is reduced down to monolayer. However, the CDW in quasi-one-dimensional（1D） materials like transition metal trichalcogenides（TMTCs） is yet to be explored in low dimension whose mechanism is likely distinct from their quasi-2D ***, we report a systematic study on the CDW properties of titanium trisulfide（TiS3）. Two phase transition temperatures were observed to decrease from 53 K（103 K） to 46 K（85 K） for the bulk and 〈 15-nm thick nanoribbon, respectively,which arises from the increased fluctuation effect across the chain in the nanoribbon structure, thereby destroying the CDW coherence. It also suggests a strong anisotropy of CDW states in quasi-1D TMTCs which is different from that in ***, by using back gate of-30 V ～ 70 V in 15-nm device, we can tune the second transition temperature from110 K（at-30 V） to 93 K（at 70 V） owing to the altered electron concentration. Finally, the optical approach through the impinging of laser beams on the sample surface is exploited to manipulate the CDW transition, where the melting of the CDW states shows a strong dependence on the excitation energy. Our results demonstrate TiS3 as a promising quasi-1D CDW material and open up a new window for the study of collective phases in TMTCs.

关键词： TiS3 two-dimensional material charge density wave phase transition

Ultrafast magnetization enhancement and spin current injection in magnetic multilayers by exciting the nonmagnetic metal

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Science China(Physics,Mechanics & Astronomy) 2023年第12期66卷 158-168页

作者： Wen-Tian Lu Zhe Yuan Xiaohong Xu Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan 030032China institute for nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China

A systematic investigation of spin injection behavior in Au/FM(FM=Fe and Ni)multilayers is performed using the superdiffusive spin transport *** exciting the nonmagnetic layer,the laser-induced hot electrons may transfer spin angular momentum into the adjacent ferromagnetic(FM)metals resulting in ultrafast demagnetization or *** find that these experimental phenomena sensitively depend on the particular interface reflectivity of hot electrons and may reconcile the different observations in the *** by the ultrafast spin currents carried by the hot electrons,we propose the multilayer structures to generate highly spin-polarized currents for the development of future ultrafast spintronics *** spin polarization of the electric currents carried by the hot electrons can be significantly enhanced by the joint effects of bulk and interfacial spin ***,the intensity of the generated spin current can be optimized by varying the number of repeated stacking units and the thickness of each metallic layer.

关键词： spintronics ultrafast magnetodynamics spin polarization transport magnetic multilayer