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Experimental study on reactions between alkaline basaltic melt and orthopyroxenes: constraints on the evolution of lithospheric mantle in the North China Craton

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Acta Geochimica 2024年第2期43卷 354-365页

作者： Hanqi He Mingliang Wang Hongfeng Tang Key Laboratory for high Temperature and high pressure Study of the Earth’s Interior Institute of GeochemistryChinese Academy of SciencesGuiyang 550081China University of Chinese Academy of Sciences Beijing 100049China School of Resource and Civil Engineering Suzhou UniversitySuzhou 234000AnhuiChina

The experimental results of the reactions between an alkaline basaltic melt and mantle orthopyroxenes under high-temperature and high-pressure conditions of 1300–1400℃ and 2.0–3.0 GPa using a six-anvil apparatus are reported in this paper.The reactions are proposed to simulate the interactions between melts from the asthenospheric mantle and the lithospheric mantle.The starting melt in the experiments was made from the alkaline basalt occurring in Fuxin,Liaoning Province,and the orthopyroxenes were separated from the mantle xenoliths in Damaping,Hebei Province.The results show that clinopyroxenes were formed in all the reactions between the alkaline basaltic melt and orthopyroxenes under the studied P–T conditions.The formation of clinopyroxene in the reaction zone is mainly controlled by dissolution–crystallization,and the chemical compositions of the reacted melt are primarily infl uenced by the diff usion eff ect.Temperature is the most important parameter controlling the reactions between the melt and orthopyroxenes,which has a direct impact on the melting of orthopyroxenes and the diff usion of chemical components in the melt.Temperature also directly controls the chemical compositions of the newly formed clinopyroxenes in the reaction zone and the reacted melt.The formation of clinopyroxenes from the reactions between the alkaline basaltic melt and orthopyroxenes can result in an increase of CaO and Al_(2)O_(3) contents in the rocks containing this mineral.Therefore,the reactions between the alkaline basaltic melt from the asthenospheric mantle and orthopyroxenes from the lithospheric mantle can lead to the evolution of lithospheric mantle in the North China Craton from refractory to fertile with relatively high CaO and Al 2 O 3 contents.In addition,the reacted melts in some runs were transformed from the starting alkaline basaltic into tholeiitic after reactions,indicating that tholeiitic magma could be generated from alkaline basaltic one via reactions between the latter and orthopyroxene.

关键词： Alkaline basaltic melt Orthopyroxene Melt–mineral reaction high-temperature and high-pressure experiment Genesis of basalt Evolution of lithospheric mantle in the North China Craton

Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS_(2)

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Chinese Physics B 2024年第6期33卷 63-67页

作者：陈佳骏吕心邓李思敏但雅倩黄艳萍崔田 institute of high pressure Physics School of Physical Science and TechnologyNingbo UniversityNingbo 315211China State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China

Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.

关键词： high pressure transition metal dichalcogenides doped TiS_(2) electronic phase transition

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)

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Journal of Semiconductors 2024年第4期45卷 36-41页

作者： Fei Sun Yi Peng Guoqiang Zhao Xiancheng Wang Zheng Deng Changqing Jin institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physics University of Chinese Academy of SciencesBeijing 101408China Center for high pressure Science and Technology Advanced Research Beijing 100094Chin

Applying pressure has been evidenced as an effective method to control the properties of semiconductors,owing to its capability to modify the band configuration around Fermi energy.Correspondingly,structural evolutions under external pres-sures are required to analyze the mechanisms.Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn_(0.95)Mn_(0.05))_(2)As_(2)is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells.The materials become ferromagnetic with Curie temperature of 105 K after further 20%K doping.The title material undergoes an isostruc-tural phase transition at around 19 GPa.Below the transition pressure,it is remarkable to find lengthening of Zn/Mn-As bond within Zn/MnAs layers,since chemical bonds are generally shortened with applying pressures.Accompanied with the bond stretch,interlayer As-As distances become shorter and the As-As dimers form after the phase transition.With further compres-sion,Zn/Mn-As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

关键词： magnetic semiconductor high-pressure in-situ X-ray diffraction phase transition

highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband photodetector

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Nano Research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for high pressure Science and Technology Advanced Research Shanghai 201203China State Key Laboratory of high Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical gain.However,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension heterojunction.Here,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface recombination.The device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as 377.45.The R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of photocurrent.It is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) photodetector

STUDY ON THE CONFIGURATIONS OF H_3^+ H_3 WITH CHANNEL-COUPLING METHOD

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Chinese Science Bulletin 1989年第1期34卷 82-83页

作者：周奇年刘锦超苟清泉 institute of high-Temperature and high-pressure Physics Chengdu University of Science and Technology

Study on H3+, H3 has been an important subject in the field of atoms and molecules. Semiempirical methods and ab initio calculations have been employed in the recent sixty years. The results obtained by the former are... 详细信息

关键词： sixty latter Configuration letter hoose triangle belongs saddle chosen

Stability and melting behavior of boron phosphide under high pressure

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Chinese Physics B 2024年第4期33卷 579-584页

作者：梁文嘉向晓君李倩梁浩彭放 institute of Atomic and Molecular Physics Sichuan UniversityChengdu 610065China School of Mathematics and Physics Southwest University of Science and TechnologyMianyang 621900China Center for high pressure Science and Technology Advanced Research Shanghai 201203China

Boron phosphide(BP)has gained significant research attention due to its unique photoelectric and mechanical properties.In this work,we investigated the stability of BP under high pressure using x-ray diffraction and scanning electron microscope.The phase diagram of BP was explored in both B-rich and P-rich environments,revealing crucial insight into its behavior at 5.0 GPa.Additionally,we measured the melting curve of BP from 8.0 GPa to 15.0 GPa.Our findings indicate that the stability of BP under high pressure is improved within B-rich and P-rich environments.Furthermore,we report a remarkable observation of melting curve frustration at 10.0 GPa.This study will enhance our understanding of stability of BP under high pressure,shedding light on its potential application in semiconductor,thermal,and light-transmitting devices.

关键词： boron phosphide stability melting curve high pressure

Review of 2D Bi2X3（X=S,Se,Te）:from preparation to photodetector

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Rare Metals 2024年第6期43卷 2349-2370页

作者： Zhi Zeng Dong-Bo Wang Xuan Fang Jia-Mu Cao Bing-Ke Zhang Jing-Wen Pan Dong-Hao Liu Si-Hang Liu Shu-Jie Jiao Tian-Yuan Chen Gang Liu Lian-Cheng Zhao Jin-Zhong Wang Department of Optoelectronic Information Science School of Materials Science and EngineeringHarbin Institute of Technology Changchun University Science and Technology School of PhysicsThe State Key Laboratory of High Power Semiconductor Lasers School of Astronautics Harbin Institute of Technology Center for high pressure Science and Technology Advanced Research

Detector has become an indispensable part of human beings.The increasing demand for photodetectors with high performance has promoted the research of novel materials.At the same time,with the development of rising material system,two-dimensional（2D） materials attract a lot of attention,while the suitable option for fabricating photodetector is still limited.The prospering of bismuth chalcogenides injected new vitality for material field,thereinto,the unique topological insulator characteristics make the research on bismuth selenide（Bi2Se3） and bismuth telluride（Bi2Te3） intriguing.2D Bi2X3also exhibits unique features among various 2D materials,of which,the adjustable narrow energy band gap and polarization-sensitive photocurrent contribute to the promising application of high performance and broadband photodetector.In this review,from a bottom-up perspective,we summarize fundamental properties,synthesis method,photodetector performance of 2D Bi2X3based on the previous study,which provide an overall perspective of 2D Bi2X3.Wherein,the section of the photodetector is specifically discu ssed with regard to pure Bi2X3photodetector and heterojunction photodetector.A brief summary and outlook were also explored in the end.

关键词： Bi 2 X 3 Preparation 2D Photodetector

Robust enhancement of valley polarization and quantum yield in composition grading lateral heterostructure of MoS2-WS2 monolayer

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Progress in Natural Science:Materials International 2024年第1期34卷 187-193页

作者： Mengke Kang Cheng Zhang Congpu Mu Kun Zhai Tianyu Xue Bochong Wang Fusheng Wen Yingchun Cheng Jianyong Xiang Jun-Feng Dai Anmin Nie Zhongyuan Liu Center for high pressure Science State Key Laboratory of Metastable Materials Science and Technology Yanshan University Shenzhen institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology Shenzhen Key Laboratory of Quantum Science and Engineering

Valley degeneracy can be broken owing to the strong spin-orbit coupling in two-dimensional transition metal dichalcogenides（2D-TMDCs）. Valley-dependent interaction of carriers in TMDCs with different circular polarizations of light offers valley degree-of-freedom besides charge and spin to carry information. Thus, bandgap engineering of 2D-TMDCs plays a critical role in developing practical valleytronic devices. Hereby, we demonstrate a great enhancement in quantum yield as well as polarization of monolayer MoS2achieved by gradually alloying W atoms in MoS2. By appropriately setting a time offset between the evaporation of MoO3and WO3precursors during chemical vapor deposition, a compositionally graded heterostructure of MoS2-WS2monolayer can be readily grown at large scale. Raman and transmission electron microscopy measurements demonstrate that the interface possesses a steep gradient in composition, spanning from MoS2to WS2over a length ～2 μm.Compared to pure monolayer MoS2, the photoluminescence intensity at the compositionally graded interface of Mo1-xWxS2was observed to increase by a factor of 16 owing to the effective separation of photogenerated carriers by the built-in electric field. Particularly, a remarkably high polarization of 70% at 16 K is demonstrated for the compositionally graded interface of Mo1-xWxS2, which is ～1.4 times larger than that in MoS2and is attributed to the combined effect of the alloyed structure and graded bandgap. Such an engineering scheme with a graded bandgap offers new approach for the development of high-efficiency valleytronics devices.

关键词： Transition metal dichalcognide monolayer Compositionally graded in-plane heterostructure Chemical vapor deposition Valley polarization Quantum yield

A novel rapid cooling assembly design in a high-pressure cubic press apparatus

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Matter and Radiation at Extremes 2024年第2期9卷 98-104页

作者： Peiyan Wu Yongjiang Xu Yanhao Lin Center for high pressure Science and Technology Advanced Research Beijing 100193People’s Republic of China School of Earth Sciences and Resources China University of GeosciencesBeijing 100083People’s Republic of China

In traditional high-pressure–temperature assembly design, priority has been given to temperature insulation and retention at high pressures.This limits the efficiency of cooling of samples at the end of experiments, with a negative impact on many studies in high-pressure Earth andplanetary science. Inefficient cooling of experiments containing molten phases at high temperature leads to the formation of quench textures,which makes it impossible to quantify key compositional parameters of the original molten phase, such as their volatile contents. Here,we present a new low-cost experimental assembly for rapid cooling in a six-anvil cubic press. This assembly not only retains high heatingefficiency and thermal insulation, but also enables a very high cooling rate (∼600 ℃/s from 1900 ℃ to the glass transition temperature).Without using expensive materials or external modification of the press, the cooling rate in an assembly (∼600 ℃/s) with cube lengths of38.5 mm is about ten times faster than that in the traditional assembly (∼60 ℃/s). Experiments yielding inhomogeneous quenched melttextures when the traditional assembly is used are shown to yield homogeneous silicate glass without quench textures when the rapid coolingassembly is used.

关键词： cubic insulation apparatus