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Fabrication of plasmonic nanopyramidal array as flexible SERS substrate for biosensing application

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Nano Research 2023年第1期16卷 1132-1140页

作者： Anindita Das Udit Pant Cuong Cao Rakesh SMoirangthem Hitesh Bhanudas Kamble Nanophotonics Lab Department of PhysicsIndian Institute of Technology(Indian School of Mines)Dhanbad-826004India Institute for Global Food Security School of Biological SciencesQueen’s University of Belfast19 Chlorine GardensBelfastBT95DLUK Material and Advanced Technologies for Healthcare Queen’s University of Belfast18-30 Malone RoadBelfastBT95BNUK iitb nanofabrication facility Department of Electrical EngineeringIndian Institute of TechnologyBombay-400076India

The proposed work aims to develop a sensitive surface-enhanced Raman spectroscopy(SERS)*** inverted nano pyramid array on silicon substrate fabricated using electron beam lithography(EBL)was utilised as a master template and the mold was later replicated via nanoimprinting process to prepare gold-coated polymer nanopyramid three-dimensional(3D)SERS *** fast and versatile replication process using nanoimprinting lithography(NIL)can produce polymer nanopyramids in a low-cost and reproducible ***,the proposed fabrication protocol can be easily upscale for large scale *** intense electric field confinement at nanotips and four edges of gold-coated polymer nanopyramid enhanced the Raman signal of probe molecules,i.e.,Rhodamine 6G with a limit of detection down to 3.277×10−9 M was *** work also underlines the efficiency of gold-coated polymer nanopyramid arrays in the spectral detection of hemoglobin proteins at low *** Raman signal enhancement mechanism was further studied through the electromagnetic simulation using COMSOL *** addition,bending test experiments were performed to understand the effect of flexibility on SERS signal *** fabricated gold-coated polymer nanopyramids arrays could pave the way for the development of low-cost SERS platforms for the detection of hazardous biological and chemical compounds at ultra-low concentrations in practical applications.

关键词： nanopyramids surface-enhanced Raman spectroscopy(SERS) flexible hemoglobin protein nanoimprinting replica molding

Study of top and bottom contact resistance in one organic field-effect transistor

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Chinese Physics B 2009年第8期18卷 3530-3534页

作者：刘舸刘明王宏商立伟姬濯宇刘兴华柳江 Laboratory of nanofabrication and Novel Device Integration Institute of MicroelectronicsChinese Academy of Sciences

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.

关键词： organic field-effect transistor top contact geometry bottom contact geometry hybrid contact geometry

Ultra-high photoresponsive photodetector based on ReS_(2)/SnS_(2)heterostructure

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Chinese Physics B 2023年第9期32卷 545-551页

作者：王冰辉邢艳辉董晟园李嘉豪韩军涂华垚雷挺贺雯馨张宝顺曾中明 Key Laboratory of Opto-electronics Technology Ministry of EducationCollege of MicroelectronicsBeijing University of TechnologyBeijing 100124China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding *** response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel *** device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)*** study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices.

关键词： two-dimensional material ReS_(2) heterostructure photodetector

Study of enhancement-mode GaN pFET with H plasma treated gate recess

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Journal of Semiconductors 2023年第11期44卷 63-68页

作者： Xiaotian Gao Guohao Yu Jiaan Zhou Zheming Wang Yu Li Jijun Zhang Xiaoyan Liang Zhongming Zeng Baoshun Zhang School of Materials Science and Engineering Shanghai UniversityShanghai 200444China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China

This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT *** transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate *** this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN *** approach allows for E-mode operation while retaining high-quality p-channel characteristics.

关键词： GaN pFET E-mode H plasma treatment ION/IOFF ratio

On-chip plasmonic spin-Hall nanograting for simultaneously detecting phase and polarization singularities

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Light(Science & Applications) 2020年第1期9卷 1095-1103页

作者： Fu Feng Guangyuan Si Changjun Min Xiaocong Yuan Michael Somekh Nanophotonics Research Center Shenzhen Key Laboratory of Micro-Scale Optical Information TechnologyShenzhen UniversityShenzhen 518060China Melbourne Centre for nanofabrication Victorian Node of the Australian National Fabrication FacilityClaytonVICAustralia Faculty of Engineering University of NottinghamNottingham NG72RDUK

Phase and polarization singularities are important degrees of freedom for electromagnetic field *** these singularities is essential for modern optics,but it is still a challenge,especially in integrated optical *** this paper,we propose an on-chip plasmonic spin-Hall nanograting structure that simultaneously detects both the polarization and phase singularities of the incident cylindrical vortex vector beam(CVVB).The nanograting is symmetry-breaking with different periods for the upper and lower parts,which enables the unidirectional excitation of the surface plasmon polariton depending on the topological charge of the incident optical vortex ***,spin-Hall meta-slits are integrated onto the grating so that the structure has a chiral response for polarization *** demonstrate theoretically and experimentally that the designed structure fully discriminates both the topological charges and polarization states of the incident beam *** proposed structure has great potential in compact integrated photonic circuits.

关键词： polarization simultaneous phase

High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect

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Chinese Physics B 2024年第1期33卷 728-733页

作者：李淑萍雷挺严仲兴王燕张黎可涂华垚时文华曾中明 Suzhou Industrial Park Institute of Services Outsourcing Suzhou 215123China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China School of Electronics and Information Engineering Wuxi UniversityWuxi 214105China

Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing ***, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

关键词： WSe_(2) heterostructure photodetector photogating effect

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

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Journal of Semiconductors 2024年第7期45卷 70-75页

作者： Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang State Key Laboratory of High-Power Semiconductor Laser School of PhysicsChangchun University of Science and TechnologyChangchun 130022China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Suzhou Powerhouse Electronics Technology Co. Ltd.Suzhou 215123China

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关键词： AlGaN/GaN MIS HEMTs gate dielectric layer depletion-mode gate reliability I_(on)/I_(off)ratio

Diffractive Deep Neural Networks at Visible Wavelengths

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Engineering 2021年第10期7卷 1483-1491页

作者： Hang Chen Jianan Feng Minwei Jiang Yiqun Wang Jie Lin Jiubin Tan Peng Jin Center of Ultra-precision Optoelectronic Instrument Harbin Institute of TechnologyHarbin 150001China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Ministry of EducationHarbin Institute of TechnologyHarbin 150001China

Optical deep learning based on diffractive optical elements offers unique advantages for parallel processing,computational speed,and power *** landmark method is the diffractive deep neural network(D^(2) NN)based on three-dimensional printing technology operated in the terahertz spectral *** the terahertz bandwidth involves limited interparticle coupling and material losses,this paper extends D^(2) NN to visible wavelengths.A general theory including a revised formula is proposed to solve any contradictions between wavelength,neuron size,and fabrication limitations.A novel visible light D^(2) NN classifier is used to recognize unchanged targets(handwritten digits ranging from 0 to 9)and targets that have been changed(i.e.,targets that have been covered or altered)at a visible wavelength of 632.8 *** obtained experimental classification accuracy(84%)and numerical classification accuracy(91.57%)quantify the match between the theoretical design and fabricated system *** presented framework can be used to apply a D^(2) NN to various practical applications and design other new applications.

关键词： Optical computation Optical neural networks Deep learning Optical machine learning Diffractive deep neural networks

Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD

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Journal of Semiconductors 2023年第6期44卷 39-45页

作者： Wenbo Tang Xueli Han Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Research Center of Laser Crystal Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Hangzhou Institute of Optics and Fine Mechanics Hangzhou 311421China

Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.

关键词： homoepitaxial growth MOCVD Si-doping films high activation efficiency Ohmic contacts