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Modeling Electron Transport in Vertical-SOI NMOSFET by Directly Solving BTE with FEA

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Semiconductor Photonics and Technology 2004年第2期10卷 127-132页

作者： TONGJian-nong ZOUXue-cheng SHENXu-bang CenterforICDesign StateKeyLab.forImageProcessingandIntelligentControl Dept.ofElectron.Sci.andtechnol. huazhonguniversityofsci.andtechnol. Wuhan430074CHN

A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation *** result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.

关键词： SOI BTE FEA 电子传输 NMOSFET 有限元分析

Analysis on Mode Field Distribution of Waveguide Grating Coupler by the Scalar FDTD

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Semiconductor Photonics and Technology 2003年第3期9卷 166-169,177页

作者： HUANGChong-qing LIUJing LUOWen-hua ANWei-ke YUANXiu-hua HUANGDe-xiu Dept.ofPhys. YueyangNormalUniversityYueyang414006CHN Dept.ofOptoelectron.Eng. HuazhongUniversityofSci.andTechnol.Wuhan430074CHN

The scalar two-dimensional finite difference time domain (FDTD) method is applied to simulate the mode field distribution of TE 0 of the waveguide grating coupler. Computer simulation shows that the same stable mode field distribution pattern is obtained through the different kinds of driving sources. It is found that the optical field mode is determined by waveguide structure and optical wavelength other than the driving *** to the mode field distribution, the optimum coupling efficiency can be predicted. Compared with another numerical methods,the CPU-time and memory elements of computer used by FDTD are much less.

关键词：波导光栅耦合器光场耦合功率 FDTD 有限差分时域

Factors Influencing Conversion of Pyritic Sulfur in Coal by Microwave Irradiation

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Journal of China University of Mining and Technology 2005年第1期15卷 16-20页

作者： SUIJian-cai XUMing-hou QIUJi-hua CHENGRong StateKeyLaboratoryofCoalCombustion HuazhongUniversityofSci.＆Tech.WuhanHubei430074China

The high sulfur coal from southwest of China was used to examine the influence of different factors such as irradiation time, particle size of coal, and leachant (Na2CO3, NaOH and CuCl22H2O)on the conversion rate of pyrite to pyrrhotite by microwave irradiation. Single factor experiment was performed firstly, then orthogonal test method was used to explore these factors. The result shows that the optimal treating conditions for the conversion are a treatment time of 3 min, a particle size from 0.086 mm to 0.102 mm, and a favorable leachant of sodium hydroxide. Under these conditions the conversion rate of pyrite can reach 45.7 %.

关键词：微波照射粉煤因子分析脱硫

The Expression of the Apoptosis-Suppressive Gene bcl-2 in the Tissue of Colon Carcinoma

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Journal of Huazhong University of Science and Technology(Medical Sciences) 2002年第3期22卷 218-220页

作者：黄文广姚璇 DepartmentofGeneralSurgery XieheHospitalTongjiMedicalCollegeHuazhongUniversityofScienceandTechnologyWuhan430022 DepartmentofGeneralSurgery XieheHospitalTongjiMedicalCollegeHuazhongUniversityofSci

The role of bcl 2 in the pathogenesis of colorectal tumor were studied. The exp ression of bcl 2 in the colorectal carcinoma and incisional edge tissue of tumo r was detected by using SABC method. The results showed that the positive rate o f bcl 2 was 69.6 % in colorectal carcinoma and 47.6 % in the incisional edge ti ssue respectively, with the difference being very significant ( P =0.001). B cl 2 positive rate was associated with Dukes' stage, but had nothing to do with histological classification. It was concluded that bcl 2 might play a signific ant role in the development of colorectal carcinoma.

关键词： colorectal carcinoma bcl 2 oncoprotein apop tosis immunohistochemistry

Design of MMI 1×8 Optical Power Splitters Used Si-based SiO_2 Waveguide

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Semiconductor Photonics and Technology 2004年第3期10卷 168-173页

作者： WUXiao-jing LUOFeng-guang StateKeyLab.ofLaserTechnoi. HuazhongUniversityofSci.＆Technoi.Wuhan430074CHN

An initial structure design of MMI 1×8 optical power splitters is *** waveguide material is Si-based SiO2 Ge-doped and deposited by PECVD *** strip structure is implied in the section *** using BPM-CAD,a favorable result is obtained that this device has a sound uniformity and fairly low ***,simulations of designs with certain changed parameters is also implemented for a better design configuration.

关键词：光功率分配多模干扰波导 MMI

Detection Techniques of Femtosecond Lasers

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Semiconductor Photonics and Technology 2004年第4期10卷 297-302页

作者： LIULi-peng ZHOUMing DAIQi-xun CAILan SchoolofMater.Sci.andtechnol SchoolofMechanicalEng.JiangsuUniversity Zhengjiang212013CHN

The measurement techniques of femtosecond spectroscopy are effective method to investigate ultrafast dynamics, they are widely used in the fields of physics, chemistry and biology. In this paper, the principle, experiment setup and the approaches to deal with the experiment data were presented. Then different measurement techniques such as transient absorption spectroscopy, photon echoes, optical Kerr effect and degenerate four-wave mixing were explained with special examples. At last, the application prospect of measurement techniques of femtosecond spectroscopy was forecasted.

关键词：飞秒激光器超快动力学第四混频泵浦探测

Design of Polarization-independent Wavelength-interleave Coupler in Fluorinated Polyimide Waveguide

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Semiconductor Photonics and Technology 2004年第1期10卷 21-27页

作者： JIAHong-bo CHENBao-xue ZHOUJian-zhong ZHAODe-xir LUHong-liang YUANYi-fang ISOMamoru CollegeofOpt.andElectr.Inform.Eng. ShanghaiUniversityofSci.andTechnol.Shanghai200093CHN NittaShanghaiCo. LtdShanghai200233CHN Dept.ofChem.Eng. TokyoUniversityofAgricult.andTechnol.184--8588JPN

Based on the measurement of dispersion characteristic and birefractive index of the fluorinated polyimide film,a statistical optimum design method is proposed and used to realize the design of 32- and 36-wavelengths optical waveguide wavelength-interleave coupler(i,e.,interleaver) with the optimization of polarization fluctuation and wavelength interval of 0.8 nm at 1 550 *** largest cross coupling ratios of the two interleavers are respectively less than 1.8% and 3.5%,while the least through coupling ratios are respectively greater than 98.2% and 96.5%.The output differences due to polarization fluctuation are less than ±1.7% and ±3.2%.

关键词：光波导氟化聚酰亚胺波导独立偏振波长扫描耦合器

1400-1500 nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO_4 Laser

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Semiconductor Photonics and Technology 2003年第4期9卷 201-204,233页

作者： MEIJin-jie LIUDe-ming WANGYing HUANGDe-xiu Dept.ofOptoelectron. HuazhongUniversityofSci.＆Technol.Wuhan430074CHN Dept.ofInform.Eng. AirforceRadarAcademyWuhan430010CHN Dept.ofOptoelectron. HuazhongUniversityofSci.＆Technol.Wuhan430074CHN

Different material-doped Raman fiber lasers with very high efficiency operating in continuous-wave are *** 1 W Nd∶YVO 4 laser pumping at wavelength of 1 342 nm, single mode output power of above 500 mW (optical-to-optical conversion efficiency of 50%) is simulated in the range of 1 400-1 500 *** high-germanium,high-phosphate and high-borate silicate fibers as the gain medium,laser output at wavelengths of 1 420,1 450,1 480 and 1 495 nm can be achieved with different geometries,which are just as pumping C-band and L-band distributed Raman fiber amplifiers.

关键词：光纤激光器拉曼激光器拉曼光纤 Nd:YVO4激光器掺杂

850 nm Implant-confined VCSEL Temperature Characteristics

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Semiconductor Photonics and Technology 2004年第1期10卷 35-37页

作者： LILin ZHONGJing-chang LIUWen-li ZHAOYing-jie ZHANGYong-ming SUWei Nation.KeyLab.ofHighPowerSemiconductorLasers ChangchunUniversityofSci.andTechnol.Changchun130022CHN

The temperature characteristics of VCSEL using proton implantation are described,compared with its edge-emitting ***-confined VCSEL operation has been realized up to 120 ℃.These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.

关键词： VCSEL 温度特性光损耗垂直谐振腔表面散射激光激光检测温度系数