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A novel scheme of hybrid entanglement swapping and teleportation using cavity QED in the small and large detuning regimes and quasi-Bell state measurement method

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Chinese Physics B 2016年第10期25卷 45-51页

作者： R Pakniat M K Tavassoly M H Zandi Faculty of Physics Shahid Bahonar University of Kerman Faculty of Physics Atomic and Molecular Group Yazd University Research group of Optics and photonics Yazd University

We outline a scheme for entanglement swapping based on cavity QED as well as quasi-Bell state measurement(quasiBSM) methods. The atom–field interaction in the cavity QED method is performed in small and large detuning *** assume two atoms are initially entangled together and, distinctly two cavities are prepared in an entangled coherent–coherent state. In this scheme, we want to transform entanglement to the atom-field system. It is observed that, the fidelities of the swapped entangled state in the quasi-BSM method can be compatible with those obtained in the small and large detuning regimes in the cavity QED method(the condition of this compatibility will be discussed). In addition, in the large detuning regime, the swapped entangled state is obtained by detecting and quasi-BSM approaches. In the continuation,by making use of the atom–field entangled state obtained in both approaches in a large detuning regime, we show that the atomic as well as field states teleportation with complete fidelity can be achieved.

关键词： entanglement swapping quantum teleportation cavity QED quasi-Bell state measurement

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

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Journal of Semiconductors 2016年第2期37卷 45-56页

作者： W.Nakwaski R.P.Sarza?a photonics group Institute of Physics Lodz University of Technology

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers de- pends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered condi- tions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-buming effect has been discussed. The impacts on laser performance introduced by oxide apertures （their sizes and localization） have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures.

关键词： semiconductor lasers simulation model EEL VCSEL VECSEL DBF QCL

Solution of the Schrodinger equation for a particular form of Morse potential using the Laplace transform

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Chinese Physics C 2013年第4期37卷 36-38页

作者： M.Zarezadeh M.K.Tavassoly Atomic and Molecular group Faculty of PhysicsYazd University photonics Research group Engineering Research CenterYazd University

In this paper, we have solved the Schrdinger equation for a particular kind of Morse potential and find its normalized eigenfunctions and eigenvalues, exactly. Our work is based on the Laplace transform technique wh... 详细信息

关键词： Schrdinger equation Laplace transform Morse potential bound state

Phonon imaging in 3D with a fibre probe

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Light(Science & Applications) 2021年第6期10卷 1007-1019页

作者： Salvatore La Cavera III Fernando Perez-Cota Richard JSmith Matt Clark Optics and photonics group Faculty of EngineeringUniversity of NottinghamUniversity ParkNottingham NG72RDUK

We show for the first time that a single ultrasonic imaging fibre is capable of simultaneously accessing 3D spatial information and mechanical properties from microscopic *** novel measurement system consists of two ultrafast lasers that excite and detect high-frequency ultrasound from a nano-transducer that was fabricated onto the tip of a single-mode optical fibre.A signal processing technique was also developed to extract nanometric in-depth spatial measurements from GHz frequency acoustic waves,while still allowing Brillouin spectroscopy in the frequency ***-free and non-contact imaging performance was demonstrated on various polymer *** singular device is equipped with optical lateral resolution,2.5μm,and a depth-profiling precision of 45 nm provided by *** endoscopic potential for this device is exhibited by extrapolating the single fibre to tens of thousands of fibres in an imaging *** a device catalyses future phonon endomicroscopy technology that brings the prospect of label-free in vivo histology within reach.

关键词： fibre equipped acoustics

Representations of coherent and squeezed states in an extended two-parameter Fock space

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Chinese Physics C 2012年第8期36卷 703-709页

作者： M. K. Tavassoly M. H. Lake Atomic and Molecular group Faculty of Physics Yazd University Yazd Iran photonics Research group Engineering Research Center Yazd University Yazd Iran

Recently an f -deformed Fock space which is spanned by ｜ n λ was introduced. These bases are the eigenstates of a deformed non-Hermitian Hamiltonian. In this contribution, we will use rather new nonorthogonal basis vectors for the construction of coherent and squeezed states, which in special case lead to the earlier known states. For this purpose, we first generalize the previously introduced Fock space spanned by ｜ n λ bases, to a new one, spanned by extended two-parameters bases ｜ n λ 1 ,λ 2 . These bases are now the eigenstates of a non-Hermitian Hamiltonian H λ 1 ,λ 2 = a λ 1 ,λ 2 a ＋ 1 2 , where a λ 1 ,λ 2 = a ＋ λ 1 a ＋ λ 2 and a are, respectively, the deformed creation and ordinary bosonic annihilation operators. The bases ｜ n λ 1 ,λ 2 are nonorthogonal （squeezed states）, but normalizable. Then, we deduce the new representations of coherent and squeezed states in our two-parameter Fock space. Finally, we discuss the quantum statistical properties, as well as the non-classical properties of the obtained states numerically.

关键词： coherent state squeezed state representation theory quantum statistics non-orthogonal bases

Stochastic collocation for device-level variability analysis in integrated photonics

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photonics Research 2016年第2期4卷 93-100页

作者： Yufei Xing Domenico Spina Ang Li Tom Dhaene Wim Bogaerts photonics Research group Department of Information Technology Center for Nano and BiophotonicsGhent University imec Department of Information Technology Internet Based Communication Networks and Services (IBCN)Ghent University iMinds Luceda photonics

We demonstrate the use of stochastic collocation to assess the performance of photonic devices under the effect of uncertainty. This approach combines high accuracy and efficiency in analyzing device variability with the ease of implementation of sampling-based methods. Its flexibility makes it suitable to be applied to a large range of photonic devices. We compare the stochastic collocation method with a Monte Carlo technique on a numerical analysis of the variability in silicon directional couplers.

关键词： Stochastic collocation for device-level variability analysis in integrated photonics

Two-dimensional analysis of a negative differential conductance gate transistor as a THz emitter

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Plasma Science and Technology 2017年第4期19卷 15-22页

作者： Sh RAHMATALLAHPUR A ROSTAMI S KHORRAM photonics and Nanocrystal Research Lab.(PNRL) Faculty of Electrical and Computer EngineeringUniversity of TabrizTabriz 51666-14761Iran photonics group Research Institute for Applied Physics and Astronomy(RIAPA)University of TabrizTabriz 51664-14761Iran

We investigate plasma modes in a transistor including a negative differential conductance in the gate. The analytical results show that the plasma wave generation is substantially influenced by the lateral direction （width of the transistor）, gate leakage current and ＇viscosity. The injection from the gate （opposed to the gate leakage current） can improve the plasma oscillations and their amplitude with respect to ordinary transistors. We also estimate, which to our best knowledge has been derived for the first time, the total power emitted by the transistor and the emitted pattern which qualitatively gives reasonable agreement with the experimental data. The results show that the radiated power depends on various parameters such as drift velocity, momentum relaxation time, gate leakage current and especially the lateral direction. A negative gate current enhances the power while the gate leakage current decreases the power.

关键词： terahertz emitter solid state plasma two-dimensional analysis negative differentialconductance

Design of a single all-silicon ring resonator with a 150 nm free spectral range and a 100 nm tuning range around 1550 nm

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photonics Research 2016年第2期4卷 84-92页

作者： Ang Li Qiangsheng Huang Wim Bogaerts photonics Research group Department of Information Technology Ghent University-IMEC Center for Nano- and Biophotonics (NB-photonics) Ghent University State Key Laboratory for Modern Optical Instrumentation Centre for Optical and Electromagnetic ResearchZhejiang Provincial Key Laboratory for Sensing Technologies Zhejiang University Luceda photonics

We present a novel and simple method to obtain an ultrawide free spectral range(FSR) silicon ring resonator together with a tuning range covering the entire spectrum from 1500 to 1600 nm. A ring resonator with a large FSR together with a high Q factor, high tuning efficiency, and low fabrication cost and complexity is desired for many applications. In this paper, we introduce a novel way to make such a ring resonator, which takes advantage of the well-known resonance-splitting phenomenon. It is a single ring resonator with an FSR of more than 150 nm around 1550 nm and which has an easy thermo-optic tunability that can produce a tuning range around 90 nm or even more. Moreover, the device is simple to implement and can be fabricated in standard complementary metal-oxide semiconductor technology without requiring any kind of complicated processing or extra *** potential applications include single mode laser cavities, wavelength division multiplexing filters,(de)multiplexers, optical sensors, and integrated reflectors.

关键词： ring mode free

Barut-Girardello and Gilmore-Perelomov coherent states for pseudoharmonic oscillators and their nonclassical properties: Factorization method

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Chinese Physics B 2013年第8期22卷 421-428页

作者： M K Tavassoly H R Jalali Atomic and Molecular group Faculty of Physics Yazd UniversityYazd Iran photonics Research group Engineering Research Center Yazd UniversityYazd Iran The Laboratory of Quantum Information Processing Yazd UniversityYazd Iran

In this paper we try to introduce the ladder operators associated with the pseudoharmonic oscillator, after solving the corresponding Schrrdinger equation by using the factorization method. The obtained generalized raising and lowering operators naturally lead us to the Dirac representation space of the system which is much easier to work with, in comparison to the functional Hilbert space. The SU（1, 1） dynamical symmetry group associated with the considered system is exactly established through investigating the fact that the deduced operators satisfy appropriate commutation relations. This result enables us to construct two important and distinct classes of Barut-Girardello and Gilmore-Perelomov coherent states associated with the system. Finally, their identities as the most important task are exactly resolved and some of their nonclassical properties are illustrated, numerically.

关键词： pseudoharmonic oscillator factorization method Barut-Girardello coherent states Gilmore-Perelomov coherent states nonclassical properties