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Realization of one-dimensional 2^(n)-root topological states in photonic lattices

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Science china(Technological Sciences) 2024年第1期67卷 98-104页

作者： WEI RuiShan ZHANG QingLong YANG DanDan HUANG XiongJian PAN QiWen KANG Juan QIU JianRong YANG ZhongMin DONG GuoPing State key laboratory of Luminescent Materials and devices and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied TechniquesGuangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and DevicesSchool of Materials Science and EngineeringSouth China University of TechnologyGuangzhou 510640China School of Physics and Optoelectronics South China University of TechnologyGuangzhou 510640China State key laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China

Square-root topological insulators recently discovered are intriguing topological *** possess topological properties inherited from the squared Hamiltonian and exhibit double-band *** mechanism of the square root was generalized to 2^(n)-root topological insulators,giving rise to more band *** this study,we describe the experimental realization of onedimensional 2^(n)-root topological insulators in photonic waveguide arrays using the archetypical Su-Schrieffer-Heeger(SSH)*** edge states with tunable numbers are clearly observed under visible *** particular,we visualized the dynamic evolutions of the light propagation by varying the sample lengths,which further proved the localization and multiple numbers of edge states in 2^(n)-root topological *** experiment,which involves constructing 2^(n)-root topological photonic lattices in various geometric arrangements,provides a stable platform for studying topological states that exhibit a remarkable degree of flexibility and control.

关键词： 2^(n)-root topological insulators multiple edge states photonic waveguide arrays light dynamics

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

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Nano Research 2024年第6期17卷 5569-5577页

作者： Jianqi Dong Dongqi Zhang Yi Ma Daotong You Jinping Chen Bin Liu Xingfu Wang Zengliang Shi Chunxiang Xu State key laboratory of Digital Medical Engineering School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China Jiangsu Provincial key laboratory of Advanced photonic and Electronic Materials National Laboratory of Solid State MicrostructuresSchool of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Institute of photonics Technology Jinan UniversityGuangzhou 510632China Guangdong Engineering Research Center of Optoelectronic Functional Materials and devices Institute of SemiconductorsSouth China Normal UniversityGuangzhou 510631China

Nanostructure photodetectors,as the core component of optoelectronic devices,are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption ***,we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet *** radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias,indicating effective carriers’*** more,by integrating plasmonic effect,the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33×1012 Jones under 325 nm UV light *** the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V *** high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection *** work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

关键词： GaN/ZnTe core/shell nanopillar array self-power ultraviolet/visible photodetector plasmonic effect

Control of temperature dependent viscosity for manufacturing of Bi-doped active fiber

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International Journal of Extreme Manufacturing 2024年第3期6卷 522-530页

作者： Rui Duan Jingfei Chen Hao Ke Tianxia Wei Ke Zhang Xueliang Li Xu Feng Qiuju Zheng Zhixue He Jianrong Qiu Shifeng Zhou State key laboratory of Luminescent Materials and devices School of Materials Science and EngineeringSouth China University of TechnologyGuangzhou 510640People’s Republic of China Guangdong Provincial key laboratory of fiber Laser Materials and Applied Techniques Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and DevicesGuangzhou 510640People’s Republic of China School of Materials Science and Engineering Qilu University of TechnologyJinanPeople’s Republic of China Peng Cheng laboratory Shenzhen 518000People’s Republic of China College of Optical Science and Engineering State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhou 310027People’s Republic of China

Bi-activated photonic materials are promising for various applications in high-capacity telecommunication,tunable laser,and advanced bioimaging and *** various Bi-doped material candidates have been explored,manufacturing of Bi heavily doped fiber with excellent optical activity remains a long-standing ***,a novel viscosity evolutional behavior mediated strategy for manufacturing of Bi-doped active fiber with high dopant solubility is *** intrinsic relation among the evolution of Bi,reaction temperature and viscosity of the glass system is ***,the effective avenue to prevent the undesired deactivation of Bi during fiber drawing by tuning the temperature dependent viscosity evolution is *** applying the strategy,for the first time we demonstrate the success in fabrication of heavily doped Bi active ***,the principal fiber amplifier device is constructed and broadband optical signal amplification is *** findings indicate the effectiveness of the proposed temperature dependent viscosity mediated strategy for developing novel photonic active fiber,and they also demonstrate the great potential for application in the next-generation high-capacity telecommunication system.

关键词： infrared luminescence active fiber optical amplification

Controllable shaping of high-index dielectric nanoparticles by exploiting the giant optical force of femtosecond laser pulses

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photonics Research 2024年第2期12卷 282-291页

作者： YUHENG MAO SHUWEN BAI MINGCHENG PANMAI LIDAN ZHOU SHIMEI LIU SHULEI LI HAIYING LIU HAIHUA FAN JUN DAI SHENG LAN Guangdong Provincial key laboratory of Nanophotonic Functional Materials and devices School of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Shenzhen Institute of Terahertz Technology and Innovation Shenzhen 518102China State key laboratory of Optoelectronic Materials and Technologies School of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510006China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China

Nanoparticles made of different materials usually support optical resonances in the visible to near infrared spectral range,such as the localized surface plasmons observed in metallic nanoparticles and the Mie resonances observed in dielectric *** optical resonances,which are important for practical applications,depend strongly on the morphologies of *** irradiation is a simple but effective way to modify such optical resonances through the change in the morphology of a *** laser-induced shaping of metallic nanoparticles has been successfully demonstrated,it remains a big challenge for dielectric nanoparticles due to their larger Young’s modulus and smaller thermal ***,we proposed and demonstrated a strategy for realizing controllable shaping of high-index dielectric nanoparticles by exploiting the giant optical force induced by femtosecond laser *** was found that both Si and Ge nanoparticles can be lit up by resonantly exciting the optical resonances with femtosecond laser pulses,leading to the luminescence burst when the laser power exceeds a *** addition,the morphologies of Si and Ge nanoparticles can be modified by utilizing the giant absorption force exerted on them and the reduced Young’s modulus at high *** shape transformation from sphere to ellipsoid can be realized by laser irradiation,leading to the blueshifts of the optical *** was found that Si and Ge nanoparticles were generally elongated along the direction parallel to the polarization of the laser *** shaping of Si and Ge can be achieved by deliberately adjusting the excitation wavelength and the laser *** findings are helpful for understanding the giant absorption force of femtosecond laser light and are useful for designing nanoscale photonic devices based on shaped highindex nanoparticles.

关键词： optical polarization dielectric

Highly efficient nonuniform finite difference method for three-dimensional electrically stimulated liquid crystal photonic devices

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photonics Research 2024年第4期12卷 865-875页

作者： ZHENGHAO GUO MENGJUN LIU ZIJIA CHEN RUIZHI YANG PEIYUN LI HAIXIA DA DONG YUAN GUOFU ZHOU LINGLING SHUI HUAPENG YE Guangdong Provincial key laboratory of Optical Information Materials and Technology&Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China SCNU-TUE Joint Lab of Device Integrated Responsive Materials(DIRM) National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial key laboratory of Nanophotonic Functional Materials and devices School of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Joint laboratory of Optofluidic Technology and Systems National Center for International Research on Green OptoelectronicsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China key laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province Nanjing 210023China

Liquid crystal(LC)photonic devices have attracted intensive attention in recent decades,due to the merits of tunability,cost-effectiveness,and high ***,the precise and efficient simulation of large-scale three-dimensional electrically stimulated LC photonic devices remains challenging and resource *** we report a straightforward nonuniform finite difference method(NFDM)for efficiently simulating largescale LC photonic devices by employing a spatially nonuniform mesh grid.

关键词： nonuniform crystal finite

High-power all-polarization-maintaining fiber femtosecond pulse laser at 780 nm and its engineering integration

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中国激光 2024年

作者：罗韬温俊鹏王文龙李梓晗朱喆杨家豪吴垠修昊范怡衡刘亚龙韦小明杨中民 guangzhou Yangming Laser Technology Co. Ltd 3. Research Institute of Future Technology South China Normal University School of Physics and Optoelectronics State Key Laboratory of Luminescent Materials and Devices Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Device Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques South China University of Technology

We present a high-power, high-stability all-polarization-maintaining (all-PM)fiber femtosecond pulse laser source at 780 nm with full engineering integration that comprises an all-PM fiber amplified chirped pulse laser at 1560 nm, a grating pair compressorandasecond-harmonicgeneration(SHG)***-PMfiber amplified chirped pulse laser at 1560 nm operates with a repetition rate of 111.5 MHz and an average power of 5.37 W, which is compressed with a pulse width of～204 *** 780-nm pulses are subsequently generated by SHG in a frequency-doubling *** achieve an average power of 2.22 W at 780 nm with a pulse width of 288 fs, an SHG efficiency of 52%, and a root-mean-square power fluctuation of 0.23%, which is *** integrated for practical application with reliable laser operation. We anticipate that this780-nmall-PMfiberfemtosecondpulselaserwithfullengineeringintegrationis promising for frontier applications, like two-photon imaging, nanofabrication, terahertz generation, etc.

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Harpoon-shaped topological photonic crystal for on-chip beam splitter

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Science china(Physics,Mechanics & Astronomy) 2024年第9期67卷 91-98页

作者： Zhiwei Guan Ruixue Dou Chuangxin Xie Tianyimei Zuo Liyu Huang keyin Wen Chaofeng Wang Huapeng Ye Junmin Liu Ze Dong Dianyuan Fan Shuqing Chen Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China College of Physics and Engineering Technology Minzu Normal University of XingyiXingyi 562400China Guangdong Provincial key laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of New Materials and New Energies Shenzhen Technology UniversityShenzhen 518118China School of information and Electronics Beijing Institute of TechnologyBeijing 100081China

The advancement of integrated optical communication networks necessitates the deployment of on-chip beam splitters for efficient signal interconnections at network ***,the pursuit of micron-scale beam splitting with large corners and reducing the device footprint to boost connection flexibility often results in phase *** mismatches,which stem from radiation modes and backward scattering,pose significant obstacles in creating highly integrated and interference-resistant *** address this,we introduce a solution based on the topological valley-contrasting state generated by photonic crystals with opposing valley Chern numbers,manifested in a harpoon-shaped structure designed to steer the splitting *** approach enables adiabatic mode field evolution over large corners,capitalizing on the robust phase modulation capabilities and topological protection provided by the subwavelength-scale valley-contrasting *** demonstration reveals that beam splitters with large corners of 60°,90°,and 120°exhibit insertion loss fluctuations below 2.7 dB while maintaining a minimal footprint of 8.8μm×8.8μ*** a practical demonstration,these devices facilitate three-channel signal connections,successfully transmitting quadrature phase shift keying signals at 3.66 Tbit/s with bit error rates below the forward error correction threshold,demonstrating performance comparable to that in defects *** harnessing the unidirectional excitation feature,we anticipate significant enhancements in the capabilities of signal distribution and connection networks through a daisy chain configuration.

关键词： channel interconnection on-chip beam splitter topological valley-contrasting state

Gradient-induced long-range optical pulling force based on photonic band gap

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Light(Science & Applications) 2024年第5期13卷 865-874页

作者： Wenlong Lu Alexey V.Krasavin Sheng Lan Anatoly V.Zayats Qiaofeng Dai Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and DevicesSchool of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Department of Physics and London Centre for Nanotechnology King’s College LondonLondon WC2R 2LSUK

Optical pulling provides a new degree of freedom in optical *** is generally believed that long-range optical pulling forces cannot be generated by the gradient of the incident ***,we theoretically propose and numerically demonstrate the realization of a long-range optical pulling force stemming from a self-induced gradient field in the manipulated *** analogy to potential barriers in quantum tunnelling,we use a photonic band gap design in order to obtain the intensity gradients inside a manipulated object placed in a photonic crystal waveguide,thereby achieving a pulling *** the usual scattering-type optical pulling forces,the proposed gradient-field approach does not require precise elimination of the reflection from the manipulated *** particular,the Einstein-Laub formalism is applied to design this unconventional gradient *** magnitude of the force can be enhanced by a factor of up to 50 at the optical resonance of the manipulated object in the waveguide,making it insensitive to *** developed approach helps to break the limitation of scattering forces to obtain longrange optical pulling for manipulation and sorting of nanoparticles and other *** developed principle of using the band gap to obtain a pulling force may also be applied to other types of waves,such as acoustic or water waves,which are important for numerous applications.

关键词： optical waveguide scattering

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

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Nano Research 2024年第3期17卷 1886-1892页

作者： Xinzhu Gao Quan Chen Qinggang Qin Liang Li Meizhuang Liu Derek Hao Junjie Li Jingbo Li Zhongchang Wang Zuxin Chen School of Semiconductor Science and Technology South China Normal UniversityFoshan 528225China Guangdong Provincial key laboratory of Chip and Integration Technology Guangzhou 510631China Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of SciencesHefei 230601China School of Science STEM CollegeRMIT UniversityMelbourne 3000Australia CAS key laboratory of Functional Materials and devices for special Environments Xinjiang Technical Institute of Physics&ChemistryChinese Academy of SciencesUrumqi 830011China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China International Iberian Nanotechnology laboratory(INL) Av.Mestre Jose Veiga s/nBraga 4715-330Portugal

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor ***,we rationally design a tri-gate two-dimensional(2D)ferroelectric van der Waals heterostructures device based on copper indium thiophosphate(CuInP_(2)S_(6))and few layers tungsten disulfide(WS_(2)),and demonstrate its multi-functional applications in multi-valued state of data,non-volatile storage,and logic *** co-regulating the input signals across the tri-gate,we show that the device can switch functions flexibly at a low supply voltage of 6 V,giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/*** findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.

关键词： two-dimensional(2D)ferroelectric heterostructure tri-gate polymorphic regulation in-memory computing