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Influence of Tm^(3+) ions on the amplification of Ho^(3+):~5I_7→~5I_8 transition in fluoride glass modified by Al(PO_3)_3 for applications in mid-infrared optics

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Chinese Optics Letters 2017年第5期15卷 62-67页

作者：祁芳薇黄飞飞王涛雷若珊张军杰徐时清张龙 College of materials Science and engineering China Jiliang University Key Laboratory of materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences

In this work, we investigate a new type of fluoride glasses modified by Al（PO_3）_3 with various Tm^（3＋）∕Ho^（3＋） doping concentrations. The introduced PO_-~3 plays an effective role in improving the glass-forming ability and thermal stability. Besides, 1.47, 1.8, and 2.0 μm emissions originating from Tm^（3＋）and Ho^（3＋）, respectively, are *** spectroscopic properties and energy transfer mechanisms between Tm^（3＋）and Ho^（3＋）are analyzed as well. It is noted that the higher predicted spontaneous transition probability（118.74 s-1） along with the larger product of measured decay lifetime and the emission cross section（σemi×τ） give evidence of intense 2.0 μm fluorescence.

关键词： Tm ions on the amplification of Ho for applications in mid-infrared optics

Graphdiyne as a saturable absorber for 2-µm all-solid-state Q-switched laser

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Science China materials 2021年第3期64卷 683-690页

作者： Yuqian Zu Jia Guo Qianqian Hao Feng Zhang Cong Wang Jie Liu Bing Wang Shandong Provincial engineering and Technical center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device School of Physics and ElectronicsShandong Normal UniversityJinan250014China Collaborative Innovation center of Light Manipulations and Applications Shandong Normal UniversityJinan250358China Institute of Data Science and technology Shandong Normal UniversityJinan250014China Institute of Microscale Optoelectronics Collaborative Innovation Center for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)Shenzhen UniversityShenzhen518060China

As a novel one-atom-thick carbon allotrope,graphdiyne(GDY)has attracted wide interest in two-dimensional materials owing to its unique feature with a planar layer comprising sp2-and sp-hybridized carbon atoms and a direct natural bandgap.A high-quality saturable absorber(SA)based on GDY was successfully fabricated,and the nonlinear saturable absorption properties were investigated.A compact diode-pumped solid-state passively Q-switched laser based on the as-prepared GDY-SA could be operated at 2µ*** Q-switched laser delivered a maximum average output power of 1.29 W at a central wavelength of 1908.41 nm with up to 54.8%slope efficiency.A repetition rate of 91.58 kHz and single pulse energy of 23.08µJ were *** work is the first application of GDY as an SA to generate all-solid-state pulsed *** results indicate that GDY is a promising SA for solid-state pulsed lasers and has further application potential for ultrafast photonic devices in the 2-µm region.

关键词： graphdiyne saturable absorber all-solid-state laser passively Q-switched two-dimensional materials

Optimizing the morphology of all-polymer solar cells for enhanced photovoltaic performance and thermal stability

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Journal of Semiconductors 2023年第5期44卷 34-41页

作者： Kang An Wenkai Zhong Chunguang Zhu Feng Peng Lei Xu Zhiwei Lin Lei Wang Cheng Zhou Lei Ying Ning Li Fei Huang Institute of Polymer Optoelectronic materials and devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640China Frontiers Science center for Transformative Molecules Center of Hydrogen Scienceand School of Chemistry and Chemical EngineeringShanghai Jiao Tong UniversityShanghai 200240China South China Institute of Collaborative Innovation Dongguan 523808China South China Advanced Institute for Soft Matter Science and technology School of Emergent Soft MatterSouth China University of TechnologyGuangzhou 510640China School of Light Industry and engineering&State Key Laboratory of Pulp&Paper engineering South China University of TechnologyGuangzhou 510640China

Due to the complicated film formation kinetics, morphology control remains a major challenge for the development of efficient and stable all-polymer solar cells(all-PSCs). To overcome this obstacle, the sequential deposition method is used to fabricate the photoactive layers of all-PSCs comprising a polymer donor PTzBI-oF and a polymer acceptor PS1. The film morphology can be manipulated by incorporating amounts of a dibenzyl ether additive into the PS1 layer. Detailed morphology investigations by grazing incidence wide-angle X-ray scattering and a transmission electron microscope reveal that the combination merits of sequential deposition and DBE additive can render favorable crystalline properties as well as phase separation for PTzBI-oF:PS1 blends. Consequently, the optimized all-PSCs delivered an enhanced power conversion efficiency(PCE) of 15.21%along with improved carrier extraction and suppressed charge recombination. More importantly, the optimized all-PSCs remain over 90% of their initial PCEs under continuous thermal stress at 65 °C for over 500 h. This work validates that control over microstructure morphology via a sequential deposition process is a promising strategy for fabricating highly efficient and stable all-PSCs.

关键词： morphology all-polymer solar cells thermal stability sequential deposition

Hydrogel-elastomer-based stretchable strain sensor fabricated by a simple projection lithography method

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International Journal of Smart and Nano materials 2021年第3期12卷 256-268页

作者： Zhenqing Li Xiangnan He Jianxiang Cheng Honggeng Li Yuan-Fang Zhang Xiaojuan Shi Kai Yu Hui Ying Yang Qi Ge Shenzhen Key Laboratory of Biomimetic Robotics and Intelligent Systems Department of Mechanical and Energy EngineeringSouthern University of Science and TechnologyShenzhenChina guangdong Provincial Key Laboratory of Human-Augmentation and Rehabilitation Robotics in Universities Southern University of Science and TechnologyShenzhenChina Digital Manufacturing and Design Centre Singapore University of Technology and DesignSingapore Department of Mechanical engineering University of Colorado DenverDenverCOUSA National Key Laboratory of Science and technology on Advanced Composites in Special Environments Harbin Institute of TechnologyHarbinP.R.China

Stretchable strain sensor detects a wide range of strain variation and is therefore a key component in various *** traditional ones made of elastomers doped with conductive components or fabricated with liquid conductors,ionically conductive hydrogel-based strain sensors remain conductive under large deformations and are ***,dehydration is a challenging issue for the *** have developed hydrogel-elastomer-based strain sensors where an elastomer matrix encapsulates a hydrogel circuit to prevent its ***,the reported multistep approaches are generally *** group recently reported a multimaterial 3D printing approach that enables fast fabrication of such sensors,yet requires a self-built digital-light-processing-based multimaterial 3D ***,we report a simple projection lithography method to fabricate hydrogel-elastomer-based stretchable strain sensors within 5 *** method only requires a UV projector/lamp with photomasks;the chemicals are commercially available;the protocols for preparing the polymer precursors are friendly to users without chemistry ***,the manufacturing flexibility allows users to readily pattern the sensor circuit and attach the sensor to a 3D printed soft pneumatic actuator to enable strain sensing on the *** proposed approach paves a simple and versatile way to fabricate hydrogel-elastomer-based stretchable strain sensors and flexible electronic devices.

关键词： Ionically conductive hydrogel stretchable strain sensor projection lithography

Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer

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Nano research 2021年第10期14卷 3616-3620页

作者： Susu Yang Houfu Song Yan Peng Lu Zhao Yuzhen Tong Feiyu Kang Mingsheng Xu Bo Sun Xinqiang Wang State Key Laboratory for Mesoscopic Physics and Frontiers Science center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Dongguan Institute of Opto-Electronics Peking UniversityDongguan 523808China Tsinghua-Berkeley Shenzhen Institute Tsinghua UniversityShenzhen 518055China Institute of Novel Semiconductors and State Key Laboratory of Crystal Material Shandong UniversityJinan 250100China Tsinghua Shenzhen International Graduate School and Guangdong Provincial Key Laboratory of Thermal Management Engineering&MaterialsTsinghua UniversityShenzhen 518055China Laboratory of Advanced materials School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Institute of Novel Semiconductors and School of Microelectronics Shandong UniversityJinan 250100China

Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In this work,we experimentally measured thermal boundary conductance(TBC)at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance(TDTR).We find that the TBCs of GaN/Ti/AuSn/Ti/Si,GaN/Ti/AuSn/Ti/SiC,and GaN/Ti/AuSn/Ti/diamond,are 16.5,14.8,and 13.2 MW·m^(-2)·K^(-1)at room temperature,*** measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface,due to the large mismatch of phonon modes between AuSn/Ti and substrates,shown as the difference of Debye temperature of two ***,we measured the TBC at interface between GaN and thermal conductive substrates,and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view.

关键词： GaN thermal boundary conductance time-domain thermoreflectance(TDTR) diffuse mismatch model

Fe_(2)O_(3)-decorated boron/nitrogen-co-doped carbon nanosheets as an electrochemical sensing platform for ultrasensitive determination of paraquat in natural water

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Chinese Chemical Letters 2023年第1期34卷 446-451页

作者： Meng Li Xinzhong Wang Yelin Zhu Xiuxiu Jia Shusheng Zhang Huaisheng Wang Yongtao Li Guangzhi Hu School of Electronic Communication technology Shenzhen Institute of Information TechnologyShenzhen 518172China College of Chemistry Zhengzhou UniversityZhengzhou 450000China Institute for Ecological research and Pollution Control of Plateau Lakes School of Ecology and Environmental ScienceYunnan UniversityKunming 650504China School of materials Science and engineering Liaocheng UniversityLiaocheng 252000China Joint Institute for Environmental research and Education College of resources and environmentSouth China Agricultural UniversityGuangzhou 510642China

Boron/nitrogen-co-doped carbon(BCN)nanosheets decorated with Fe_(2)O_(3) nanocrystals(Fe_(2)O_(3)–BCN)were cast on a glassy carbon electrode(GCE)and applied as an electrochemical sensor to effectively detect paraquat(PQ),a toxic herbicide,in aqueous environments.A linear experiment performed using square wave voltammetry(SWV)under optimized experimental conditions produced a decent linear relationship and a low detection limit(LOD)of 2.74 nmol/L(S/N=3).Repeatability,reproducibility,stability,and interference experiments confirmed that the Fe_(2)O_(3)–BCN/GCE system exhibited decent electrochemical sensing performance for PQ ***,the designed sensor showed high selectivity and a decent linear relationship with PQ concentration in natural water *** the best of our knowledge,this is the first study on the preparation of Fe_(2)O_(3)–BCN nanosheets for PQ *** proposed sensor can be employed as an effective alternative tool for distinguishing and processing PQ.

关键词： Paraquat Fe_(2)O_(3)-BCN Electrochemical sensor Contaminant detection

Accurate reconstruction of electric field of ultrashort laser pulse with complete two-step phase-shifting

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High Power Laser Science and engineering 2019年第1期7卷 92-98页

作者： Yi Cai Zhenkuan Chen Shuiqin Zheng Qinggang Lin Xuanke Zeng Ying Li Jingzhen Li Shixiang Xu Shenzhen Key Laboratory of Micro-Nano Photonic Information technology College of Electronic Science and TechnologyShenzhen University International Collaborative Laboratory of 2D materials for Optoelectronics Science and technology Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong ProvinceShenzhen University

This paper presents a complete two-step phase-shifting(TSPS) spectral phase interferometry for direct electric-field reconstruction(SPIDER) to improve the reconstruction of ultrafast optical fields. Here, complete TSPS acts as a balanced detection that can not only remove the effect of the dc term of the interferogram, but also reduce measurement noises,and thereby improve the capability of SPIDER to measure the pulses with narrow spectra or complex spectral *** prisms are chosen to replace some environment-sensitive optical components, especially reflective optics to improve operating stability and improve signal-to-noise ratio further. Our experiments show that the available shear can be decreased to 1.5% of the spectral width, which is only about 1/3 compared with traditional SPIDER.

关键词： electric-field reconstruction shearing interferometry spectral phase ultrashort laser pulse

Encapsulation for perovskite solar cells

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Science Bulletin 2021年第2期66卷 100-102,M0003页

作者： Yuanhang Cheng Qing-Dan Yang Liming Ding Solar Energy research Institute of Singapore National University of SingaporeSingapore 117574Singapore School of Chemical engineering and Light Industry Guangdong University of TechnologyGuangzhou 510006China center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Organometal halide perovskites with promising electro-optical properties have been emerged as leading semiconducting materials for solution-processed optoelectronic devices[1-3].Thanks to the great efforts from the photovoltaic community during last decade,the power conversion efficiencies(PCEs)of perovskite solar cells(PVSCs)have risen from 3.8%to 25.2%,surpassing that of polycrystalline silicon solar cells[4,5].However,more than 90%of the photovoltaic market share is still taken by silicon solar cells.

关键词：钙钛矿太阳电池封装技术 perovskite

Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge_(1–x)Sn_(x)alloys

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Science Bulletin 2021年第14期66卷 1375-1378,M0003页

作者： Ben-Chuan Lin Xing-Guo Ye Nan Wang Cai-Xin Zhang Hui-Xiong Deng Jing-Zhi Fang Hao-Nan Cui Shuo Wang Jian Liu Zhongming Wei Dapeng Yu Zhi-Min Liao Chunlai Xue Shenzhen Institute for Quantum Science and engineering Southern University of Science and TechnologyShenzhen 518055China guangdong Provincial Key Laboratory of Quantum Science and engineering Southern University of Science and TechnologyShenzhen 518055China State Key Laboratory for Mesoscopic Physics and Frontiers Science center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China center of materials Science and Optoelectronics engineering University of Chinese Academy of SciencesBeijing 100049China

Introducing ferromagnetism into non-magnetic systems without the participation of magnetic elements is promising for all-electric spintronic devices[1,2].Many approaches have been pursued,such as non-magnetic defects induced magnetization in layered materials[3–5]or the inversion symmetry breaking induced magnetization in magic-angle bilayer graphene[6–8],***,these approaches have to tackle with the localization effects or the inevitable precise control of twist angle,which hinders the future application into large-scale spintronic information *** also predicted that the spontaneous ferromagnetism could emerge in the quasi-2D crystals[9]like GaSe,but no experimental results have been ***,we report the spontaneous ferromagnetism induced by van Hove singularity[9–13]in non-magnetic groupⅣGe_(1–x)Sn_(x)alloys grown by the molecular beam epitaxy(MBE)*** findings experimentally open up an opportunity to realize spintronics in groupⅣsemiconductors.

关键词：半导体领域自发磁化分子束外延生长反演对称性磁化特性原子排列布里渊区自旋电子学