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Current status and development of CMOS SiPM for scintillator-based radiation detectors toward all-digital sensors[Invited]

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Chinese Optics Letters 2024年第2期22卷 17-27页

作者： Nicola D'Ascenzo 胡文韬劳慧华越轩张博房磊奚道明郑睿邱奥 Emanuele Antonecchia 凌怡清刘雨晴李琰俞航肖鹏谢庆国 Wuhan National Laboratory for Optoelectronics Wuhan 430074China Biomedical Engineering Department Huazhong University of Science and TechnologyWuhan 430074China RAYQUANT Technology Co. Ltd.Ezhou 436044China RAYSOLUTION Healthcare Co. Ltd.Hefei 230000China RAYMEASURE Technology Co. Ltd.Suzhou 215000China RAYCAN Technology Co. Ltd.Suzhou 215000China College of Computer Science and Software Engineering Shenzhen UniversityShenzhen 518060China

Modern scintillator-based radiation detectors require silicon photomultipliers(Si PMs)with photon detection efficiency higher than 40%at 420 nm,possibly extended to the vacuum ultraviolet(VUV)region,single-photon time resolution(SPTR)electronics and sensitive microcells need to be integrated in the same CMOS substrate,with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm×4 *** is challenging due to the increasing doping concentrations at low CMOS scales,deep-level carrier generation in shallow trench isolation fabrication,and power consumption,among *** advances at 350 and 110 nm CMOS nodes are benchmarked against available Si PMs obtained in CMOS and commercial customized *** concept of digital multithreshold Si PMs with a single microcell readout is finally reported,proposing a possible direction toward fully digital scintillator-based radiation detectors.

关键词： silicon photomultiplier complementary metal-oxide semiconductor digital SiPM

Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

Multi-junction cascaded vertical-cavity surface-emitting laser with a high power conversion efficiency of 74%

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Light(Science & Applications) 2024年第3期13卷 555-565页

作者： Yao Xiao Jun Wang Heng Liu Pei Miao Yudan Gou Zhicheng Zhang Guoliang Deng Shouhuan Zhou College of electronics and Information Engineering Sichuan UniversityChengdu 610064China Suzhou Everbright Photonics Co. LtdSuzhou 215163China

High electro-optical conversion efficiency is one of the most distinctive features of semiconductor lasers as compared to other types of *** further increase remains a significant *** enhancing the efficiency of edgeemitting lasers(EEL),which represent the highest efficiency among semiconductor lasers at present,is *** efficiency of vertical cavity surface emitting lasers(VCSELs)has always been relatively low compared to *** paper,combining modeling with experiments,demonstrates the potential of multi-junction cascaded VCSELs to achieve high efficiency beyond that of EELs,our simulations show,that a 20-junction VCSEL can achieve an efficiency of more than 88%at room *** fabricated VCSEL devices with different numbers of junctions and compared their energy efficiency.15-junction VCSELs achieved a maximum efficiency of 74%at room temperature under nanosecond driving current,the corresponding differential quantum efficiency exceeds 1100%,being the largest electro-optical conversion efficiency and differential quantum efficiency reported until now for VCSELs.

关键词： cascaded power cavity

Composite structure Al_(2)O_(3)/Al_(2)O_(3)-YAG:Ce/YAG ceramics with high color spatial uniformity for white laser lighting

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Journal of Advanced Ceramics 2024年第2期13卷 189-197页

作者： Pengfei Sang Le Zhang Jian Kang Mingzhou Li Shiwei Chen Peng Yang Bingheng Sun Yang Li Wieslaw Strek Hao Chen Jiangsu Key Laboratory of Advanced Laser Materials and Devices School of Physics and Electronics EngineeringJiangsu Normal UniversityXuzhou 221116China Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology Xuzhou 221400China Xuzhou EAGLED Technology Co. Ltd.Xuzhou 221116China Xuzhou Kangna Advanced Materials Technology Co. Ltd.Xuzhou 221116China Xuzhou Fuchang Electronic Technology Co. Ltd.Xuzhou 221116China Shanghai Institute of Optics Fine Mechanics Chinese Academy of SciencesShanghai 201800China School of Material Science and Engineering Shanghai Institute of TechnologyShanghai 201418China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China Institute of Low Temperature and Structure Research Polish Academy of SciencesWroclaw 50-422Poland

Composite ceramic phosphor(CCP)is a candidate light-conversion material to obtain the high-quality laser lighting *** based on the transmissive configuration model could not simultaneously meet the requirements of angular color uniformity and high thermal *** this study,a novel composite structure ceramic was designed,including Al_(2)O_(3)-YAG:Ce/YAG layered ceramic with a size of 1 mm×1 mm for lighting,and Al_(2)O_(3) ceramic(φ=16.0 mm)was used as the wrapping material due to its outstanding thermal *** prepared ceramics exhibited excellent thermal performance and no yellow ring *** this design,we achieved the match of the intensity distribution of the blue and yellow lights,resulting in a high angular color uniformity of 0.9 with a view angle of±80°.All ceramics showed no luminous saturation phenomenon,even the laser power density was increased up to 47.51 W/mm^(2).A high-brightness white-light source with a luminous flux of 618 lm,a luminous efficiency of 126 lm/W,a CCT of 6615 K,and a CRI of 69.9 was obtained in the transmissive *** particular,the surface temperature of the ceramic was as low as 74.1℃ under a high laser radiation(47.51 W/mm^(2)).These results indicate that Al_(2)O_(3)/Al_(2)O_(3)-YAG:Ce/YAG composite structure ceramic is a promising luminescent material in the high-power laser lighting applications.

关键词： Al_(2)O_(3)/Al_(2)O_(3)-YAG:Ce/YAG angular color uniformity high thermal stability high-power laser lighting

High recorded color rendering performance of single-structured Ce,Mn:Y_(3)(Al,Sc)_(2)Al_(3)O_(12)phosphor ceramics for high-power white LEDs/LDs

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Journal of Advanced Ceramics 2024年第6期13卷 810-820页

作者： Xuanchu Liu Congcong Yang Yanbin Li Chang Min Jian Kang Tianyuan Zhou Chunming Zhou Chaofan Shi Cen Shao Bingheng Sun Wieslaw Strek Hao Chen Le Zhang Jiangsu Key Laboratory of Advanced Laser Materials and Devices School of Physics and Electronics EngineeringJiangsu Normal UniversityXuzhou 221116China Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology Xuzhou 221400China Xuzhou EAGLED Technology Co. Ltd.Xuzhou 221116China Xuzhou Kangna Advanced Materials Technology Co. Ltd.Xuzhou 221116China Shanghai Institute of Optics Fine Mechanics Chinese Academy of SciencesShanghai 201800China Institute of Low Temperature and Structure Research Polish Academy of SciencesWroclaw 50-422Poland State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China

Achieving a high color rendering index(CRI)and luminous stability in single-structured Ce:Y_(3)Al_(5)O_(12)(Ce:YAG)phosphor ceramics(PCs)is crucial for high-power white light-emitting diodes or laser diodes(LEDs/LDs).However,cyan valleys and insufficient amounts of the red component in the Ce:YAG emission spectra significantly limit their real *** this work,a series of Ce,Mn:Y_(3)(Al,Sc)_(2)Al_(3)O_(12)(Ce,Mn:YSAG)PCs were fabricated by vacuum sintering,and efficient spectral regulation was realized for full-color *** cyan valley was filled by the blueshifted emission peak of Ce^(3+)via Sc^(3+)*** orange‒red emission at approximately 580 nm was effectively supplemented via Mn^(2+)*** particular,CRI of Ce,Mn:YSAG increased from 56.4 to 85.8,a 52%increase compared with that of Ce:YAG under high-power LED excitation,and the operating temperature was stable at approximately 50℃for long working ***,CRI of 80.9 could still be obtained for PC-based white *** results indicated that Ce,Mn:YSAG PC,which has excellent CRI and luminous stability,is an extremely promising color convertor for high-power white LEDs/LDs.

关键词： color rendering index(CRI) color converter Ce:Y_(3)Al_(5)O_(12)(Ce:YAG)phosphor ceramics(PCs) high-power white light-emitting diodes or laser diodes(LEDs/LDs) luminous stability

Self-powered wireless environmental monitoring system for in-service bridges by galloping piezoelectric-triboelectric hybridized energy harvester

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Science China(Technological Sciences) 2024年第5期67卷 1498-1509页

作者： HUANG KangXu WANG XiaoFei WANG Li ZHOU YuHui LIU FuHai CHANG ShiYuan ZHU JunTao ZHOU YuXuan ZHANG He LUO JiKui College of Civil Engineering and Architecture Zhejiang UniversityHangzhou310058China Anhui Transport Consulting&Design Institute Co. Ltd.Hefei230088China College of electronics&Information Hangzhou Dianzi UniversityHangzhou310018China Center for Balance Architecture Zhejiang UniversityHangzhou310058China College of Information Science&Electronic Engineering Zhejiang UniversityHangzhou310027China

The energy harvesting technology for the ubiquitous natural wind enables a desirable solution to the issue of distributed sensors in the bridge environmental sensing Internet of Things(Io T)system being restricted to conventional energy *** this work,a self-powered system based on a compact galloping piezoelectric-triboelectric energy harvester(GPTEH)is developed to achieve efficient wind energy *** GPTEH is constructed on the prototype of a cantilever structure with piezoelectric macro-fiber composite(MFC)sheets and a rectangular bluff body with triboelectric nanogenerators(TENgs).Through a special swing-type structural design with iron blocks inside the bluff body,the GPTEH exhibits preferable aerodynamic behavior and excellent energy conversion efficiency,compared to conventional cantilever kind of piezoelectric wind energy harvester(PWEH).The GPTEH also demonstrates the capability of high output power density(PEH of 23.65 W m^(-2)and TENG of 1.59 W m^(-2)),superior response wind speed(about 0.5 m s^(-1)),and excellent long-term stability(over 14000 cyclic tests).Furthermore,a power management system is developed to efficiently utilize the output energy from GPTEH to power the sensors and wirelessly transmit environmental data to the *** proposed GPTEH-powered system exhibits a great potential for the bridge environmental monitoring and Io T technologies.

关键词： self-powered hybrid nanogenerator triboelectric nanogenerator macro-fiber composite wireless environmental monitoring system

Electronic structure and spin state regulation of vanadium nitride via a sulfur doping strategy toward flexible zinc-air batteries

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Journal of Energy Chemistry 2024年第2期89卷 239-249,I0007页

作者： Daijie Deng Honghui Zhang Jianchun Wu Xing Tang Min Ling Sihua Dong Li Xu Henan Li Huaming Li Institute for Energy Research Institute of Quantum and Sustainable TechnologySchool of Chemistry and Chemical EngineeringSchool of Materials Science and EngineeringJiangsu Province and Education Ministry Co-Sponsored Synergistic Innovation Center of Modern Agricultural EquipmentJiangsu UniversityZhenjiang 212013JiangsuChina Key Laboratory of Radio Frequency and Micro-Nano electronics of Jiangsu Province Nanjing 210023JiangsuChina Zhenjiang Kangyuan Electrical Appliance Co. Ltd.Zhenjiang 212013JiangsuChina College of Chemical and Biological Engineering Zhejiang UniversityHangzhou 310027ZhejiangChina YTO Group Corporation Dongfanghong(Henan)Agricultural Service Technology Co. Ltd.Luoyang 471033HenanChina

Owing to the distinctive structural characteristics,vanadium nitride(VN)is highly regarded as a catalyst for oxygen reduction reaction(ORR)in zinc-air batteries(ZABs).However,VN exhibits limited intrinsic ORR activity due to the weak adsorption ability to O-containing ***,the S-doped VN anchored on N,S-doped multi-dimensional carbon(S-VN/Co/NS-MC)was constructed using the solvothermal and in-situ doping *** sulfur atoms into VN species alters the electron spin state of vanadium in the S-VN/Co/NS-MC for regulating the adsorption energy of vanadium sites to oxygen *** introduced sulfur atoms polarize the V 3d_(z)^(2) electrons,shifting spin-down electrons closer to the Fermi level in the S-VN/Co/***,the introduction of sulfur atoms into VN species enhances the adsorption energy of vanadium sites for oxygen ****OOH dissociation transitions from being unspontaneous on the VN surface to a spontaneous state on the S-doped VN ***,the ORR barrier on the S-VN/Co/NS-MC surface is *** S-VN/Co/NS-MC demonstrates a higher half-wave potential and limiting current density compared to the VN/Co/*** S-VN/Co/NS-MC-based liquid ZABs display a power density of 195.7 m W cm^(-2),a specific capacity of 815.7 m A h g^(-1),and a cycling stability exceeding 250 *** S-VN/Co/NS-MC-based flexible ZABs are successfully employed to charge both a smart watch and a mobile *** approach holds promise for advancing the commercial utilization of VN-based catalysts in ZABs.

关键词： S-doped VN Electronic structures Spin state regulation Oxygen reduction reaction Zinc-air batteries

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

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Optoelectronics Letters 2024年第2期20卷 89-93页

作者： SANG Xien XU Yuan YIN Mengshuang WANG Fang LIOU Juin J LIU Yuhuai National Center for International Joint Research of Electronic Materials and Systems International Joint-Laboratory of Electronic Materials and Systems of Henan ProvinceSchool of Electrical and Information EngineeringZhengzhou UniversityZhengzhou 450001China Institute of Intelligence Sensing Zhengzhou UniversityZhengzhou 450001China Research Institute of Industrial Technology Co. Ltd.Zhengzhou UniversityZhengzhou 450001China Zhengzhou Way Do electronics Co. Ltd.Zhengzhou 450001China School of Electrical and Information Engineering North Minzu UniversityYinchuan 750001China1

To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier *** analysis of its P-I graph,carrier concentration,and energy band diagram,the results showed that when the current was 100 m A,the In-composition gradient decrease quantum barrier(QB)structure could effectively suppress electron leakage while improving hole injection efficiency,resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well(QW).As a result,the IQE and output power of the LED were effectively improved.

关键词： diodes quantum gradient

Through-polymer,via technology-enabled,flexible,lightweight,and integrated devices for implantable neural probes

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Microsystems & Nanoengineering 2024年第2期10卷 279-291页

作者： Cunkai Zhou Ye Tian Gen Li Yifei Ye Lusha Gao Jiazhi Li Ziwei Liu Haoyang Su Yunxiao Lu Meng Li Zhitao Zhou Xiaoling Wei Lunming Qin Tiger H.Tao Liuyang Sun College of electronics and Information Engineering Shanghai University of Electric PowerShanghaiChina 2020 X-Lab Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina School of Graduate Study University of Chinese Academy of SciencesBeijingChina State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina School of Physical Science and Technology ShanghaiTech UniversityShanghaiChina Center for Excellence in Brain Science and Intelligence Technology Chinese Academy of SciencesShanghaiChina Neuroxess Co. Ltd.(Jiangxi)NanchangJiangxiChina Guangdong Institute of Intelligence Science and Technology HengqinZhuhaiGuangdongChina Tianqiao and Chrissy Chen Institute for Translational Research ShanghaiChina

In implantable electrophysiological recording systems,the headstage typically comprises neural probes that interface with brain tissue and integrated circuit chips for signal *** advancements in MEMS and CMOS technology have significantly improved these components,their interconnection still relies on conventional printed circuit boards and sophisticated *** conventional approach adds considerable weight and volume to the package,especially for high channel count *** address this issue,we developed a through-polymer via(TPV)method inspired by the through-silicon via(TSV)technique in advanced three-dimensional *** innovation enables the vertical integration of flexible probes,amplifier chips,and PCBs,realizing a flexible,lightweight,and integrated device(FLID).The total weight of the FLIDis only 25%that of its conventional counterparts relying on adapters,which significantly increased the activity levels of animals wearing the FLIDs to nearly match the levels of control animals without ***,by incorporating a platinum-iridium alloy as the top layer material for electrical contact,the FLID realizes exceptional electrical performance,enabling in vivo measurements of both local field potentials and individual neuron action *** findings showcase the potential of FLIDs in scaling up implantable neural recording systems and mark a significant advancement in the field of neurotechnology.

关键词： alloy neural recording